KR20160012947A - 에칭액 조성물 및 에칭방법 - Google Patents

에칭액 조성물 및 에칭방법 Download PDF

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Publication number
KR20160012947A
KR20160012947A KR1020150104469A KR20150104469A KR20160012947A KR 20160012947 A KR20160012947 A KR 20160012947A KR 1020150104469 A KR1020150104469 A KR 1020150104469A KR 20150104469 A KR20150104469 A KR 20150104469A KR 20160012947 A KR20160012947 A KR 20160012947A
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KR
South Korea
Prior art keywords
acid
etching
containing layer
metal
ammonium
Prior art date
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KR1020150104469A
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English (en)
Korean (ko)
Inventor
료우 코우노
토시카주 시미주
Original Assignee
간또 가가꾸 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of KR20160012947A publication Critical patent/KR20160012947A/ko

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604Chemical etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
KR1020150104469A 2014-07-24 2015-07-23 에칭액 조성물 및 에칭방법 KR20160012947A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014150981A JP2016025321A (ja) 2014-07-24 2014-07-24 エッチング液組成物およびエッチング方法
JPJP-P-2014-150981 2014-07-24

Publications (1)

Publication Number Publication Date
KR20160012947A true KR20160012947A (ko) 2016-02-03

Family

ID=55194813

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150104469A KR20160012947A (ko) 2014-07-24 2015-07-23 에칭액 조성물 및 에칭방법

Country Status (4)

Country Link
JP (1) JP2016025321A (zh)
KR (1) KR20160012947A (zh)
CN (1) CN105297022A (zh)
TW (1) TW201610234A (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
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KR20180110744A (ko) * 2017-03-30 2018-10-11 동우 화인켐 주식회사 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
KR20190094842A (ko) * 2018-02-06 2019-08-14 동우 화인켐 주식회사 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
US20200354632A1 (en) * 2018-02-05 2020-11-12 Fujifilm Corporation Chemical solution, method for manufacturing chemical solution, and method for treating substrate
KR20210146585A (ko) * 2020-05-27 2021-12-06 (주)에이켐 구리 또는 구리 합금소재 미세회로 형성용 에칭산화제 조성물 및 이를 이용한 배선 제조방법

Families Citing this family (15)

* Cited by examiner, † Cited by third party
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JP6662671B2 (ja) * 2016-03-24 2020-03-11 株式会社Adeka エッチング液組成物及びエッチング方法
KR102623996B1 (ko) * 2016-11-10 2024-01-11 동우 화인켐 주식회사 식각액 조성물 및 이를 이용한 식각방법 및 이를 이용한 표시 장치용 어레이 기판의 제조방법
CN106773563A (zh) * 2016-12-27 2017-05-31 昆山欣谷微电子材料有限公司 四丙基溴化胺无水剥离液
SG11202001057VA (en) 2017-08-22 2020-03-30 Fujifilm Electronic Materials Usa Inc Cleaning compositions
US10870799B2 (en) 2017-08-25 2020-12-22 Versum Materials Us, Llc Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device
CN110799466B (zh) * 2017-08-31 2022-09-06 日本电气硝子株式会社 玻璃的蚀刻方法和蚀刻处理装置以及玻璃板
CN109055876A (zh) * 2018-08-27 2018-12-21 四会市亿和铝业有限公司 一种制备铝材表面迷宫结构的方法
KR20220033141A (ko) * 2020-09-09 2022-03-16 동우 화인켐 주식회사 실리콘 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판
CN112430815B (zh) * 2020-11-23 2023-06-30 南通卓力达金属科技有限公司 一种蚀刻液及其制备方法和应用
CN112551909B (zh) * 2020-12-10 2023-08-01 凯盛科技股份有限公司蚌埠华益分公司 用于蚀刻制造超薄玻璃的方法
CN112941516A (zh) * 2020-12-29 2021-06-11 苏州运宏电子有限公司 一种精控式蚀刻液及其蚀刻方法
KR20230014625A (ko) * 2021-07-21 2023-01-30 동우 화인켐 주식회사 티타늄계 금속막용 식각액 조성물
KR20230015757A (ko) * 2021-07-23 2023-01-31 동우 화인켐 주식회사 은계 금속막용 식각액 조성물
CN115491677B (zh) * 2022-09-22 2023-10-13 易安爱富(武汉)科技有限公司 一种钛铝钛复合膜层的酸性蚀刻液及制备方法
CN115724592B (zh) * 2022-10-11 2024-04-12 广东山之风环保科技有限公司 一种家居触控面板玻璃ag效果蒙砂液及其制备方法

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JP2007067367A (ja) 2005-02-24 2007-03-15 Kanto Chem Co Inc チタン、アルミニウム金属積層膜エッチング液組成物
JP2008053374A (ja) 2006-08-23 2008-03-06 Kanto Chem Co Inc チタン、アルミニウム金属積層膜エッチング液組成物
JP2010199121A (ja) 2009-02-23 2010-09-09 Kanto Chem Co Inc 金属積層膜用エッチング液組成物

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JP4240424B2 (ja) * 1998-10-23 2009-03-18 エルジー ディスプレイ カンパニー リミテッド エッチング剤及びこれを用いた電子機器用基板の製造方法
JP3672256B2 (ja) * 2002-08-08 2005-07-20 インターナショナル・ビジネス・マシーンズ・コーポレーション エッチング液、薄膜トランジスタ・アレイ基板、薄膜トランジスタ・アレイ基板の製造方法および表示装置
JP4941335B2 (ja) * 2008-01-31 2012-05-30 三菱化学株式会社 エッチング液及びエッチング方法
KR101507592B1 (ko) * 2008-09-12 2015-04-06 주식회사 동진쎄미켐 유기발광다이오드표시장치의 식각액 조성물
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JP2007067367A (ja) 2005-02-24 2007-03-15 Kanto Chem Co Inc チタン、アルミニウム金属積層膜エッチング液組成物
JP2008053374A (ja) 2006-08-23 2008-03-06 Kanto Chem Co Inc チタン、アルミニウム金属積層膜エッチング液組成物
JP2010199121A (ja) 2009-02-23 2010-09-09 Kanto Chem Co Inc 金属積層膜用エッチング液組成物

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미우라 켄타 로우, 우에다 토모 마사, 야마구치 하지메, 「가볍고 얇은 시트 디스플레이를 실현하는 산화물 반도체 TFT」, 토시바 리뷰, 2012년 67권 1호, 34~37쪽.

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180110744A (ko) * 2017-03-30 2018-10-11 동우 화인켐 주식회사 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
US20200354632A1 (en) * 2018-02-05 2020-11-12 Fujifilm Corporation Chemical solution, method for manufacturing chemical solution, and method for treating substrate
US11732190B2 (en) * 2018-02-05 2023-08-22 Fujifilm Corporation Chemical solution, method for manufacturing chemical solution, and method for treating substrate
KR20190094842A (ko) * 2018-02-06 2019-08-14 동우 화인켐 주식회사 금속막 식각액 조성물 및 이를 이용한 도전 패턴 형성 방법
KR20210146585A (ko) * 2020-05-27 2021-12-06 (주)에이켐 구리 또는 구리 합금소재 미세회로 형성용 에칭산화제 조성물 및 이를 이용한 배선 제조방법

Also Published As

Publication number Publication date
JP2016025321A (ja) 2016-02-08
TW201610234A (zh) 2016-03-16
CN105297022A (zh) 2016-02-03

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