KR20160003445U - 에피택셜 성장 장치를 위한 챔버 컴포넌트들 - Google Patents

에피택셜 성장 장치를 위한 챔버 컴포넌트들 Download PDF

Info

Publication number
KR20160003445U
KR20160003445U KR2020160001599U KR20160001599U KR20160003445U KR 20160003445 U KR20160003445 U KR 20160003445U KR 2020160001599 U KR2020160001599 U KR 2020160001599U KR 20160001599 U KR20160001599 U KR 20160001599U KR 20160003445 U KR20160003445 U KR 20160003445U
Authority
KR
South Korea
Prior art keywords
susceptor
substrate
epitaxial growth
growth apparatus
supporting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR2020160001599U
Other languages
English (en)
Korean (ko)
Inventor
신이치 오키
요시노부 모리
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20160003445U publication Critical patent/KR20160003445U/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54Apparatus specially adapted for continuous coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/08Reaction chambers; Selection of materials therefor
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502Flow conditions in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/45565Shower nozzles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563Gas nozzles
    • C23C16/4558Perforated rings
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587Mechanical means for changing the gas flow
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587Mechanical means for changing the gas flow
    • C23C16/45591Fixed means, e.g. wings, baffles
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/12Substrate holders or susceptors
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/14Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24HEATING; RANGES; VENTILATING
    • F24CDOMESTIC STOVES OR RANGES ; DETAILS OF DOMESTIC STOVES OR RANGES, OF GENERAL APPLICATION
    • F24C15/00Details
    • F24C15/10Tops, e.g. hot plates; Rings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Combustion & Propulsion (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR2020160001599U 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들 Ceased KR20160003445U (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562138365P 2015-03-25 2015-03-25
US62/138,365 2015-03-25

Publications (1)

Publication Number Publication Date
KR20160003445U true KR20160003445U (ko) 2016-10-06

Family

ID=56089855

Family Applications (5)

Application Number Title Priority Date Filing Date
KR2020160001599U Ceased KR20160003445U (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR1020160035514A Active KR102571041B1 (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR1020160035532A Active KR102534192B1 (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR2020160001598U Ceased KR20160003444U (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR1020230062410A Active KR102715683B1 (ko) 2015-03-25 2023-05-15 에피택셜 성장 장치를 위한 챔버 컴포넌트들

Family Applications After (4)

Application Number Title Priority Date Filing Date
KR1020160035514A Active KR102571041B1 (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR1020160035532A Active KR102534192B1 (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR2020160001598U Ceased KR20160003444U (ko) 2015-03-25 2016-03-24 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR1020230062410A Active KR102715683B1 (ko) 2015-03-25 2023-05-15 에피택셜 성장 장치를 위한 챔버 컴포넌트들

Country Status (8)

Country Link
US (3) US10544518B2 (enExample)
EP (1) EP3275008B1 (enExample)
JP (5) JP3204580U (enExample)
KR (5) KR20160003445U (enExample)
CN (5) CN106011795B (enExample)
SG (4) SG10201602299UA (enExample)
TW (5) TWI685586B (enExample)
WO (1) WO2016154052A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200033355A (ko) * 2017-08-25 2020-03-27 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 증착 프로세스들을 위한 주입 어셈블리

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112053991B (zh) * 2014-05-21 2022-04-15 应用材料公司 热处理基座
EP3275008B1 (en) * 2015-03-25 2022-02-23 Applied Materials, Inc. Chamber components for epitaxial growth apparatus
CN107641796B (zh) * 2016-07-21 2020-10-02 台湾积体电路制造股份有限公司 制程设备及化学气相沉积制程
JP6631498B2 (ja) 2016-12-26 2020-01-15 株式会社Sumco シリコン材料製造工程の評価方法およびシリコン材料の製造方法
US10395969B2 (en) * 2017-11-03 2019-08-27 Varian Semiconductor Equipment Associates, Inc. Transparent halo for reduced particle generation
US11424112B2 (en) 2017-11-03 2022-08-23 Varian Semiconductor Equipment Associates, Inc. Transparent halo assembly for reduced particle generation
KR102014928B1 (ko) * 2018-01-18 2019-08-27 에스케이실트론 주식회사 서셉터 및 이를 포함하는 기상 증착 장치
CN110071064A (zh) * 2018-01-22 2019-07-30 上海新昇半导体科技有限公司 一种改善外延片污染印记的方法
KR102640172B1 (ko) * 2019-07-03 2024-02-23 삼성전자주식회사 기판 처리 장치 및 이의 구동 방법
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber
CN110345524B (zh) * 2019-08-22 2024-06-11 杭州老板电器股份有限公司 锅架及燃气灶
JP7342719B2 (ja) * 2020-01-28 2023-09-12 住友金属鉱山株式会社 成膜装置
KR102817778B1 (ko) 2020-04-29 2025-06-05 어플라이드 머티어리얼스, 인코포레이티드 균일성 개선을 위한 히터 커버 플레이트
CN111599716B (zh) * 2020-05-06 2024-06-21 北京北方华创微电子装备有限公司 用于外延生长设备的预热环以及外延生长设备
DE102021115349A1 (de) * 2020-07-14 2022-01-20 Infineon Technologies Ag Substrat-prozesskammer und prozessgasströmungsablenker zur verwendung in der prozesskammer
US12324061B2 (en) 2021-04-06 2025-06-03 Applied Materials, Inc. Epitaxial deposition chamber
CN113279055B (zh) * 2021-04-16 2022-07-22 上海新昇半导体科技有限公司 一种外延基座
JP7734211B2 (ja) * 2021-05-12 2025-09-04 アプライド マテリアルズ インコーポレイテッド 低質量基板支持体
JP2025523807A (ja) 2022-11-25 2025-07-25 エルジー エナジー ソリューション リミテッド リチウム-硫黄電池用正極及び高エネルギー密度特性を有するリチウム-硫黄電池
CN115928202A (zh) * 2022-12-12 2023-04-07 西安奕斯伟材料科技有限公司 外延生长装置及设备
US20240254655A1 (en) * 2023-01-26 2024-08-01 Applied Materials, Inc. Epi isolation plate and parallel block purge flow tuning for growth rate and uniformity
TWI897069B (zh) * 2023-10-20 2025-09-11 台亞半導體股份有限公司 頂板及含有頂板之磊晶成長裝置

Family Cites Families (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2644419C3 (de) * 1976-09-30 1979-05-17 Borsig Gmbh, 1000 Berlin Antriebszapfenabdichtung eines Kugelhahns
ZA777063B (en) * 1976-12-27 1979-07-25 Colgate Palmolive Co Antibacterial oral composition
US5820686A (en) * 1993-01-21 1998-10-13 Moore Epitaxial, Inc. Multi-layer susceptor for rapid thermal process reactors
US6086680A (en) * 1995-08-22 2000-07-11 Asm America, Inc. Low-mass susceptor
JPH10256163A (ja) * 1997-03-11 1998-09-25 Toshiba Corp 高速回転型枚葉式気相成長装置
US5914050A (en) * 1997-09-22 1999-06-22 Applied Materials, Inc. Purged lower liner
DE69813014T2 (de) 1997-11-03 2004-02-12 Asm America Inc., Phoenix Verbesserte kleinmassige waferhaleeinrichtung
US20010001384A1 (en) * 1998-07-29 2001-05-24 Takeshi Arai Silicon epitaxial wafer and production method therefor
JP3273247B2 (ja) * 1998-10-19 2002-04-08 株式会社スーパーシリコン研究所 エピタキシャル成長炉
JP2001313329A (ja) * 2000-04-28 2001-11-09 Applied Materials Inc 半導体製造装置におけるウェハ支持装置
DE60127252T2 (de) 2000-05-08 2007-12-20 Memc Electronic Materials, Inc. Epitaktischer siliziumwafer frei von selbstdotierung und rückseitenhalo
US6444027B1 (en) 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
JP4588894B2 (ja) * 2001-01-31 2010-12-01 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
JP3801957B2 (ja) * 2001-06-29 2006-07-26 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
JP4936621B2 (ja) * 2001-09-28 2012-05-23 アプライド マテリアルズ インコーポレイテッド 成膜装置のプロセスチャンバー、成膜装置および成膜方法
JP2003133238A (ja) * 2001-10-26 2003-05-09 Applied Materials Inc 成膜装置のプロセスチャンバー、成膜装置および成膜方法
WO2003046966A1 (en) * 2001-11-30 2003-06-05 Shin-Etsu Handotai Co., Ltd. Susceptor, gaseous phase growing device, device and method for manufacturing epitaxial wafer, and epitaxial wafer
JP2003197532A (ja) 2001-12-21 2003-07-11 Sumitomo Mitsubishi Silicon Corp エピタキシャル成長方法及びエピタキシャル成長用サセプター
US20050000449A1 (en) 2001-12-21 2005-01-06 Masayuki Ishibashi Susceptor for epitaxial growth and epitaxial growth method
JP4288036B2 (ja) * 2002-02-20 2009-07-01 東京エレクトロン株式会社 ガスシャワーヘッド、成膜装置及び成膜方法
US7270713B2 (en) * 2003-01-07 2007-09-18 Applied Materials, Inc. Tunable gas distribution plate assembly
WO2004111297A1 (ja) * 2003-06-10 2004-12-23 Tokyo Electron Limited 処理ガス供給機構、成膜装置および成膜方法
JP4379585B2 (ja) * 2003-12-17 2009-12-09 信越半導体株式会社 気相成長装置およびエピタキシャルウェーハの製造方法
WO2005111266A1 (ja) * 2004-05-18 2005-11-24 Sumco Corporation 気相成長装置用サセプタ
JP2006128485A (ja) * 2004-10-29 2006-05-18 Asm Japan Kk 半導体処理装置
KR100629358B1 (ko) 2005-05-24 2006-10-02 삼성전자주식회사 샤워 헤드
KR101208891B1 (ko) 2005-08-17 2012-12-06 주성엔지니어링(주) 대면적 기판 처리장치용 가스분배판
JP2007073892A (ja) 2005-09-09 2007-03-22 Ulvac Japan Ltd 吸着装置、貼り合わせ装置、封着方法
GB2435719A (en) 2006-03-03 2007-09-05 Darrell Lee Mann Gripping device with a multitude of small fibres using van der Waals forces
JP5069424B2 (ja) * 2006-05-31 2012-11-07 Sumco Techxiv株式会社 成膜反応装置及び同方法
JP2007324285A (ja) * 2006-05-31 2007-12-13 Sumco Techxiv株式会社 成膜反応装置
TW200809926A (en) * 2006-05-31 2008-02-16 Sumco Techxiv Corp Apparatus and method for depositing layer on substrate
TWM305960U (en) 2006-06-21 2007-02-01 Calitech Co Ltd Gas distribution plate for wafer process chamber
US8951351B2 (en) * 2006-09-15 2015-02-10 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced backside deposition and defects
US8852349B2 (en) * 2006-09-15 2014-10-07 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects
JP2008235830A (ja) * 2007-03-23 2008-10-02 Sumco Techxiv株式会社 気相成長装置
JP4661982B2 (ja) * 2007-12-28 2011-03-30 信越半導体株式会社 エピタキシャル成長用サセプタ
JP5268766B2 (ja) * 2009-04-23 2013-08-21 Sumco Techxiv株式会社 成膜反応装置及び成膜基板製造方法
WO2011017501A2 (en) * 2009-08-05 2011-02-10 Applied Materials, Inc. Cvd apparatus
JP5604907B2 (ja) * 2010-02-25 2014-10-15 信越半導体株式会社 気相成長用半導体基板支持サセプタおよびエピタキシャルウェーハ製造装置およびエピタキシャルウェーハの製造方法
KR101884003B1 (ko) 2011-03-22 2018-07-31 어플라이드 머티어리얼스, 인코포레이티드 화학 기상 증착 챔버를 위한 라이너 조립체
JP5445508B2 (ja) * 2011-04-22 2014-03-19 信越半導体株式会社 偏心量の評価方法及びエピタキシャルウェーハの製造方法
US11085112B2 (en) * 2011-10-28 2021-08-10 Asm Ip Holding B.V. Susceptor with ring to limit backside deposition
KR101339591B1 (ko) * 2012-01-13 2013-12-10 주식회사 엘지실트론 서셉터
TW201347035A (zh) * 2012-02-02 2013-11-16 Greene Tweed Of Delaware 用於具有延長生命週期的電漿反應器的氣體分散板
JP5343162B1 (ja) 2012-10-26 2013-11-13 エピクルー株式会社 エピタキシャル成長装置
USD693782S1 (en) * 2012-11-19 2013-11-19 Epicrew Corporation Lid for epitaxial growing device
US10344380B2 (en) * 2013-02-11 2019-07-09 Globalwafers Co., Ltd. Liner assemblies for substrate processing systems
US20140273503A1 (en) * 2013-03-14 2014-09-18 Memc Electronic Materials, Inc. Methods of gas distribution in a chemical vapor deposition system
JP5602903B2 (ja) * 2013-03-14 2014-10-08 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
JP5386046B1 (ja) * 2013-03-27 2014-01-15 エピクルー株式会社 サセプタ支持部およびこのサセプタ支持部を備えるエピタキシャル成長装置
JP5999511B2 (ja) * 2013-08-26 2016-09-28 信越半導体株式会社 気相エピタキシャル成長装置及びそれを用いたエピタキシャルウェーハの製造方法
KR101487411B1 (ko) * 2013-09-02 2015-01-29 주식회사 엘지실트론 라이너 및 이를 포함하는 에피텍셜 반응기
JP6198584B2 (ja) * 2013-11-21 2017-09-20 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
US11060203B2 (en) * 2014-09-05 2021-07-13 Applied Materials, Inc. Liner for epi chamber
EP3275008B1 (en) 2015-03-25 2022-02-23 Applied Materials, Inc. Chamber components for epitaxial growth apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200033355A (ko) * 2017-08-25 2020-03-27 어플라이드 머티어리얼스, 인코포레이티드 에피택셜 증착 프로세스들을 위한 주입 어셈블리

Also Published As

Publication number Publication date
US20160281263A1 (en) 2016-09-29
TW201635340A (zh) 2016-10-01
KR20160115808A (ko) 2016-10-06
JP2016184734A (ja) 2016-10-20
JP6862095B2 (ja) 2021-04-21
TW201700774A (zh) 2017-01-01
US20160281262A1 (en) 2016-09-29
CN112063997A (zh) 2020-12-11
KR102571041B1 (ko) 2023-08-24
KR102534192B1 (ko) 2023-05-17
TWI686502B (zh) 2020-03-01
TW201700775A (zh) 2017-01-01
JP2016184733A (ja) 2016-10-20
EP3275008A1 (en) 2018-01-31
TWI733663B (zh) 2021-07-21
US20160281261A1 (en) 2016-09-29
TWM531050U (zh) 2016-10-21
JP3204580U (ja) 2016-06-02
TWM535866U (zh) 2017-01-21
CN205741209U (zh) 2016-11-30
EP3275008B1 (en) 2022-02-23
JP3204579U (ja) 2016-06-02
TWI685586B (zh) 2020-02-21
KR102715683B1 (ko) 2024-10-11
KR20230073163A (ko) 2023-05-25
US11441236B2 (en) 2022-09-13
EP3275008A4 (en) 2018-11-21
SG10201602295QA (en) 2016-10-28
JP2021082831A (ja) 2021-05-27
SG10201908874UA (en) 2019-11-28
CN106011795B (zh) 2020-09-04
CN205856605U (zh) 2017-01-04
CN106011796A (zh) 2016-10-12
SG10201908873WA (en) 2019-11-28
JP6836328B2 (ja) 2021-02-24
SG10201602299UA (en) 2016-10-28
CN106011796B (zh) 2019-12-10
KR20160115806A (ko) 2016-10-06
WO2016154052A1 (en) 2016-09-29
KR20160003444U (ko) 2016-10-06
US10544518B2 (en) 2020-01-28
JP7136945B2 (ja) 2022-09-13
CN106011795A (zh) 2016-10-12

Similar Documents

Publication Publication Date Title
KR102715683B1 (ko) 에피택셜 성장 장치를 위한 챔버 컴포넌트들
KR102586986B1 (ko) 에피택셜 성장 및 에피택셜 성장 장치를 사용하는 필름 형성 방법
CN108728823B (zh) 外延生长装置
JP7209675B2 (ja) エピタキシャル成長による成膜方法、および、エピタキシャル成長装置

Legal Events

Date Code Title Description
UA0108 Application for utility model registration

Comment text: Application for Utility Model Registration

Patent event code: UA01011R08D

Patent event date: 20160324

UG1501 Laying open of application
UA0201 Request for examination

Patent event date: 20190227

Patent event code: UA02012R01D

Comment text: Request for Examination of Application

Patent event date: 20160324

Patent event code: UA02011R01I

Comment text: Application for Utility Model Registration

E902 Notification of reason for refusal
UE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event code: UE09021S01D

Patent event date: 20200713

E601 Decision to refuse application
UE0601 Decision on rejection of utility model registration

Comment text: Decision to Refuse Application

Patent event code: UE06011S01D

Patent event date: 20210125