KR20160001693A - 위치 검출 장치, 위치 검출 방법, 임프린트 장치 및 물품의 제조 방법 - Google Patents

위치 검출 장치, 위치 검출 방법, 임프린트 장치 및 물품의 제조 방법 Download PDF

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KR20160001693A
KR20160001693A KR1020150091007A KR20150091007A KR20160001693A KR 20160001693 A KR20160001693 A KR 20160001693A KR 1020150091007 A KR1020150091007 A KR 1020150091007A KR 20150091007 A KR20150091007 A KR 20150091007A KR 20160001693 A KR20160001693 A KR 20160001693A
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South Korea
Prior art keywords
diffraction grating
pattern
patterns
width
substrate
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Ceased
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KR1020150091007A
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English (en)
Korean (ko)
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히로시 사토
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20160001693A publication Critical patent/KR20160001693A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H01L21/0274—
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • G01B11/25—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures by projecting a pattern, e.g. one or more lines, moiré fringes on the object
    • G01B11/254—Projection of a pattern, viewing through a pattern, e.g. moiré
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7038—Alignment for proximity or contact printer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • H01L21/67259—
    • H01L22/12—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0606—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Mechanical Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Transform (AREA)
KR1020150091007A 2014-06-27 2015-06-26 위치 검출 장치, 위치 검출 방법, 임프린트 장치 및 물품의 제조 방법 Ceased KR20160001693A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014133245 2014-06-27
JPJP-P-2014-133245 2014-06-27
JPJP-P-2015-116883 2015-06-09
JP2015116883A JP6341883B2 (ja) 2014-06-27 2015-06-09 位置検出装置、位置検出方法、インプリント装置及び物品の製造方法

Related Child Applications (1)

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KR1020170148768A Division KR101963636B1 (ko) 2014-06-27 2017-11-09 위치 검출 장치, 위치 검출 방법, 임프린트 장치 및 물품의 제조 방법

Publications (1)

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KR20160001693A true KR20160001693A (ko) 2016-01-06

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KR1020150091007A Ceased KR20160001693A (ko) 2014-06-27 2015-06-26 위치 검출 장치, 위치 검출 방법, 임프린트 장치 및 물품의 제조 방법
KR1020170148768A Active KR101963636B1 (ko) 2014-06-27 2017-11-09 위치 검출 장치, 위치 검출 방법, 임프린트 장치 및 물품의 제조 방법
KR1020190033057A Active KR102277746B1 (ko) 2014-06-27 2019-03-22 위치 검출 장치, 위치 검출 방법, 임프린트 장치 및 물품의 제조 방법
KR1020200040205A Withdrawn KR20200038223A (ko) 2014-06-27 2020-04-02 위치 검출 장치, 위치 검출 방법, 임프린트 장치 및 물품의 제조 방법

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KR1020190033057A Active KR102277746B1 (ko) 2014-06-27 2019-03-22 위치 검출 장치, 위치 검출 방법, 임프린트 장치 및 물품의 제조 방법
KR1020200040205A Withdrawn KR20200038223A (ko) 2014-06-27 2020-04-02 위치 검출 장치, 위치 검출 방법, 임프린트 장치 및 물품의 제조 방법

Country Status (4)

Country Link
US (2) US10337856B2 (https=)
JP (1) JP6341883B2 (https=)
KR (4) KR20160001693A (https=)
CN (3) CN109059765B (https=)

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JP6701263B2 (ja) * 2014-06-27 2020-05-27 キヤノン株式会社 位置検出装置、位置検出方法、インプリント装置及び物品の製造方法
JP6685821B2 (ja) * 2016-04-25 2020-04-22 キヤノン株式会社 計測装置、インプリント装置、物品の製造方法、光量決定方法、及び、光量調整方法
JP6884515B2 (ja) * 2016-05-10 2021-06-09 キヤノン株式会社 位置検出方法、インプリント装置及び物品の製造方法
JP6863836B2 (ja) * 2017-06-28 2021-04-21 キオクシア株式会社 ナノインプリント用テンプレート及び集積回路装置の製造方法
JP6937203B2 (ja) * 2017-09-14 2021-09-22 キオクシア株式会社 インプリント装置、インプリント方法および半導体装置の製造方法
JP7201620B2 (ja) * 2017-12-27 2023-01-10 株式会社日立ハイテク 凹面回折格子の製造方法
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US20190285403A1 (en) 2019-09-19
CN108180836B (zh) 2021-06-15
US10337856B2 (en) 2019-07-02
KR20170126833A (ko) 2017-11-20
CN105222705B (zh) 2018-08-31
KR102277746B1 (ko) 2021-07-16
CN109059765B (zh) 2021-06-11
JP6341883B2 (ja) 2018-06-13
US20150377614A1 (en) 2015-12-31
JP2016027325A (ja) 2016-02-18
KR101963636B1 (ko) 2019-04-01
CN108180836A (zh) 2018-06-19
CN105222705A (zh) 2016-01-06
KR20190034178A (ko) 2019-04-01
KR20200038223A (ko) 2020-04-10
CN109059765A (zh) 2018-12-21
US10989527B2 (en) 2021-04-27

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