KR20140073351A - 발광 소자 - Google Patents

발광 소자 Download PDF

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Publication number
KR20140073351A
KR20140073351A KR1020120141503A KR20120141503A KR20140073351A KR 20140073351 A KR20140073351 A KR 20140073351A KR 1020120141503 A KR1020120141503 A KR 1020120141503A KR 20120141503 A KR20120141503 A KR 20120141503A KR 20140073351 A KR20140073351 A KR 20140073351A
Authority
KR
South Korea
Prior art keywords
layer
light emitting
electrode
emitting cell
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020120141503A
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English (en)
Korean (ko)
Inventor
최병연
이용경
주현승
범희영
홍기석
김명수
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020120141503A priority Critical patent/KR20140073351A/ko
Priority to US14/096,138 priority patent/US9337236B2/en
Priority to EP13195745.8A priority patent/EP2741338B1/en
Priority to JP2013251766A priority patent/JP2014116604A/ja
Priority to CN201310651693.6A priority patent/CN103855180B/zh
Publication of KR20140073351A publication Critical patent/KR20140073351A/ko
Priority to US15/092,682 priority patent/US9735199B2/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies

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  • Led Devices (AREA)
KR1020120141503A 2012-12-06 2012-12-06 발광 소자 Ceased KR20140073351A (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020120141503A KR20140073351A (ko) 2012-12-06 2012-12-06 발광 소자
US14/096,138 US9337236B2 (en) 2012-12-06 2013-12-04 Light emitting device having current blocking layer
EP13195745.8A EP2741338B1 (en) 2012-12-06 2013-12-04 Electrode structure for light-emitting diode array
JP2013251766A JP2014116604A (ja) 2012-12-06 2013-12-05 発光素子
CN201310651693.6A CN103855180B (zh) 2012-12-06 2013-12-05 发光器件
US15/092,682 US9735199B2 (en) 2012-12-06 2016-04-07 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020120141503A KR20140073351A (ko) 2012-12-06 2012-12-06 발광 소자

Publications (1)

Publication Number Publication Date
KR20140073351A true KR20140073351A (ko) 2014-06-16

Family

ID=49683623

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120141503A Ceased KR20140073351A (ko) 2012-12-06 2012-12-06 발광 소자

Country Status (5)

Country Link
US (2) US9337236B2 (enExample)
EP (1) EP2741338B1 (enExample)
JP (1) JP2014116604A (enExample)
KR (1) KR20140073351A (enExample)
CN (1) CN103855180B (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
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KR20160002063A (ko) * 2014-06-30 2016-01-07 에피스타 코포레이션 광전소자와 그 제조방법
KR20170132470A (ko) * 2016-05-24 2017-12-04 엘지이노텍 주식회사 반도체 소자
KR20180052500A (ko) * 2016-11-10 2018-05-18 서울바이오시스 주식회사 고효율 발광 다이오드
US10056429B2 (en) 2014-05-19 2018-08-21 Epistar Corporation Electrode structure of optoelectronic device
WO2018174425A1 (ko) * 2017-03-21 2018-09-27 서울바이오시스주식회사 분포 브래그 반사기 적층체를 구비하는 발광 다이오드
KR20190094283A (ko) 2018-02-03 2019-08-13 김승훈 기억 상기 다기능 테이블
CN110690249A (zh) * 2015-02-13 2020-01-14 首尔伟傲世有限公司 发光元件
CN113299681A (zh) * 2021-06-24 2021-08-24 京东方科技集团股份有限公司 发光器件和显示基板
WO2024053994A1 (ko) * 2022-09-06 2024-03-14 서울반도체 주식회사 발광장치

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CN103840054A (zh) * 2012-11-20 2014-06-04 展晶科技(深圳)有限公司 发光二极管芯片
KR20140073351A (ko) * 2012-12-06 2014-06-16 엘지이노텍 주식회사 발광 소자
US9356212B2 (en) 2012-12-21 2016-05-31 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
CN104885236B (zh) * 2012-12-21 2017-12-19 首尔伟傲世有限公司 发光二极管
CN106910758B (zh) * 2013-01-09 2020-05-15 新世纪光电股份有限公司 发光装置
KR20150101783A (ko) * 2014-02-27 2015-09-04 서울바이오시스 주식회사 발광 다이오드 및 그 제조 방법
KR102197082B1 (ko) * 2014-06-16 2020-12-31 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광소자 패키지
FR3023061B1 (fr) * 2014-06-27 2017-12-15 Commissariat Energie Atomique Diode de structure mesa a surface de contact sensiblement plane
JP6529223B2 (ja) * 2014-06-30 2019-06-12 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
CN104218133B (zh) * 2014-08-26 2017-04-26 华灿光电股份有限公司 一种发光二极管芯片及其制造方法
CN104362236B (zh) * 2014-11-11 2017-03-08 杭州士兰明芯科技有限公司 一种led结构及其制作方法
TWI620349B (zh) * 2015-01-05 2018-04-01 隆達電子股份有限公司 覆晶式發光二極體晶片
TWI699902B (zh) * 2015-04-22 2020-07-21 新世紀光電股份有限公司 發光元件及其製造方法
WO2016177333A1 (zh) * 2015-05-05 2016-11-10 湘能华磊光电股份有限公司 Iii族半导体发光器件倒装结构的制作方法
JP2017059752A (ja) * 2015-09-18 2017-03-23 豊田合成株式会社 発光装置とその製造方法
US9705035B1 (en) * 2015-12-30 2017-07-11 Epistar Corporation Light emitting device
DE102017205639B4 (de) * 2016-04-18 2025-02-13 Seoul Viosys Co., Ltd Lumineszenzdiode mit hoher Effizienz
CN105762246B (zh) * 2016-04-25 2017-11-28 厦门乾照光电股份有限公司 一种垂直结构发光二极管及其制作方法
KR102699567B1 (ko) * 2016-07-11 2024-08-29 삼성디스플레이 주식회사 초소형 발광 소자를 포함하는 픽셀 구조체, 표시장치 및 그 제조방법
CN106711306A (zh) * 2016-12-20 2017-05-24 合肥彩虹蓝光科技有限公司 一种高压led芯片制备方法
CN108886050A (zh) * 2017-01-24 2018-11-23 歌尔股份有限公司 微led装置、显示设备及微led制造方法
US10043941B1 (en) 2017-01-31 2018-08-07 International Business Machines Corporation Light emitting diode having improved quantum efficiency at low injection current
FR3062953A1 (fr) * 2017-02-15 2018-08-17 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif comportant une pluralite de diodes
DE102017104135A1 (de) 2017-02-28 2018-08-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
CN106941108B (zh) * 2017-05-23 2019-09-17 深圳市华星光电技术有限公司 微发光二极管显示面板及其制作方法
CN108110107A (zh) * 2017-12-18 2018-06-01 湘能华磊光电股份有限公司 一种led芯片的制作方法
JP6822429B2 (ja) * 2018-02-19 2021-01-27 日亜化学工業株式会社 発光素子
JP2019149480A (ja) * 2018-02-27 2019-09-05 豊田合成株式会社 半導体素子、発光装置、および発光装置の製造方法
CN108447955B (zh) * 2018-03-16 2019-07-23 厦门市三安光电科技有限公司 发光二极管芯片结构及其制作方法
CN208385406U (zh) * 2018-05-25 2019-01-15 深圳市瑞丰光电子股份有限公司 一种led模组
US11282984B2 (en) * 2018-10-05 2022-03-22 Seoul Viosys Co., Ltd. Light emitting device
CN109891610A (zh) 2018-10-11 2019-06-14 厦门市三安光电科技有限公司 一种发光二极管元件及其制作方法
US11515456B2 (en) 2019-02-21 2022-11-29 Innolux Corporation LED with light adjusting layer extending past the LED
KR102649029B1 (ko) * 2019-04-10 2024-03-20 삼성전자주식회사 Led 소자, led 소자의 제조 방법 및 led 소자를 포함하는 디스플레이 장치
JP6843916B2 (ja) * 2019-05-14 2021-03-17 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
TWI830759B (zh) 2019-07-31 2024-02-01 晶元光電股份有限公司 發光二極體元件及其製造方法
CN110767670B (zh) * 2019-10-31 2022-11-15 成都辰显光电有限公司 显示面板、显示装置和显示面板的制作方法
FR3103634B1 (fr) * 2019-11-21 2021-12-03 Commissariat Energie Atomique Procede de formation d’une electrode commune d’une pluralite de dispositifs optoelectroniques
CN113036014B (zh) * 2019-12-25 2022-07-05 深圳第三代半导体研究院 一种垂直集成单元发光二极管
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US10522588B2 (en) 2014-05-19 2019-12-31 Epistar Corporation Optoelectronic units in an optoelectronic device
US11355550B2 (en) 2014-05-19 2022-06-07 Epistar Corporation Optoelectronic device having conductor arrangement structures non-overlapped with heat dissipation pads
US11705480B2 (en) 2014-05-19 2023-07-18 Epistar Corporation Optoelectronic device with electrodes forming an outer boundary beyond an outer boundary of an epitaxial stack
US10056429B2 (en) 2014-05-19 2018-08-21 Epistar Corporation Electrode structure of optoelectronic device
US10825860B2 (en) 2014-05-19 2020-11-03 Epistar Corporation Electrode configuration for an optoelectronic device
KR20160002063A (ko) * 2014-06-30 2016-01-07 에피스타 코포레이션 광전소자와 그 제조방법
CN110690249A (zh) * 2015-02-13 2020-01-14 首尔伟傲世有限公司 发光元件
CN110690249B (zh) * 2015-02-13 2024-01-19 首尔伟傲世有限公司 发光元件
KR20170132470A (ko) * 2016-05-24 2017-12-04 엘지이노텍 주식회사 반도체 소자
KR20230038171A (ko) * 2016-05-24 2023-03-17 엘지이노텍 주식회사 반도체 소자
KR20180052500A (ko) * 2016-11-10 2018-05-18 서울바이오시스 주식회사 고효율 발광 다이오드
WO2018174425A1 (ko) * 2017-03-21 2018-09-27 서울바이오시스주식회사 분포 브래그 반사기 적층체를 구비하는 발광 다이오드
KR20190094283A (ko) 2018-02-03 2019-08-13 김승훈 기억 상기 다기능 테이블
CN113299681A (zh) * 2021-06-24 2021-08-24 京东方科技集团股份有限公司 发光器件和显示基板
WO2024053994A1 (ko) * 2022-09-06 2024-03-14 서울반도체 주식회사 발광장치

Also Published As

Publication number Publication date
US20160225816A1 (en) 2016-08-04
US9735199B2 (en) 2017-08-15
EP2741338B1 (en) 2020-05-20
CN103855180B (zh) 2019-11-05
CN103855180A (zh) 2014-06-11
JP2014116604A (ja) 2014-06-26
US20140159071A1 (en) 2014-06-12
US9337236B2 (en) 2016-05-10
EP2741338A1 (en) 2014-06-11

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