KR20130119012A - Ｅｕｖ 옵틱스 - Google Patents

Ｅｕｖ 옵틱스 Download PDF

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Publication number
KR20130119012A
KR20130119012A KR1020137026480A KR20137026480A KR20130119012A KR 20130119012 A KR20130119012 A KR 20130119012A KR 1020137026480 A KR1020137026480 A KR 1020137026480A KR 20137026480 A KR20137026480 A KR 20137026480A KR 20130119012 A KR20130119012 A KR 20130119012A
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KR
South Korea
Prior art keywords
mirror
euv
substrates
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020137026480A
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English (en)
Korean (ko)
Inventor
이고르 브이. 포멘코프
노버트 알. 보워링
Original Assignee
사이머 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 사이머 엘엘씨 filed Critical 사이머 엘엘씨
Publication of KR20130119012A publication Critical patent/KR20130119012A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/08—Mirrors
    • G02B5/0891—Ultraviolet [UV] mirrors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/18—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors
    • G02B7/182—Mountings, adjusting means, or light-tight connections, for optical elements for prisms; for mirrors for mirrors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y10T29/49982—Coating

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Optical Elements Other Than Lenses (AREA)
KR1020137026480A 2006-08-16 2007-07-24 Ｅｕｖ 옵틱스 Ceased KR20130119012A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/505,177 US7843632B2 (en) 2006-08-16 2006-08-16 EUV optics
US11/505,177 2006-08-16
PCT/US2007/016648 WO2008020965A2 (en) 2006-08-16 2007-07-24 Euv optics

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020097002879A Division KR20090040434A (ko) 2006-08-16 2007-07-24 Ｅｕｖ 옵틱스

Publications (1)

Publication Number Publication Date
KR20130119012A true KR20130119012A (ko) 2013-10-30

Family

ID=39082516

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020137026480A Ceased KR20130119012A (ko) 2006-08-16 2007-07-24 Ｅｕｖ 옵틱스
KR1020097002879A Ceased KR20090040434A (ko) 2006-08-16 2007-07-24 Ｅｕｖ 옵틱스

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020097002879A Ceased KR20090040434A (ko) 2006-08-16 2007-07-24 Ｅｕｖ 옵틱스

Country Status (5)

Country Link
US (3) US7843632B2 (enExample)
JP (2) JP2010500776A (enExample)
KR (2) KR20130119012A (enExample)
TW (2) TWI367611B (enExample)
WO (1) WO2008020965A2 (enExample)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7856044B2 (en) 1999-05-10 2010-12-21 Cymer, Inc. Extendable electrode for gas discharge laser
US7897947B2 (en) * 2007-07-13 2011-03-01 Cymer, Inc. Laser produced plasma EUV light source having a droplet stream produced using a modulated disturbance wave
US7598509B2 (en) * 2004-11-01 2009-10-06 Cymer, Inc. Laser produced plasma EUV light source
US7916388B2 (en) * 2007-12-20 2011-03-29 Cymer, Inc. Drive laser for EUV light source
US7843632B2 (en) * 2006-08-16 2010-11-30 Cymer, Inc. EUV optics
US8653437B2 (en) 2010-10-04 2014-02-18 Cymer, Llc EUV light source with subsystem(s) for maintaining LPP drive laser output during EUV non-output periods
US7671349B2 (en) * 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
US8654438B2 (en) 2010-06-24 2014-02-18 Cymer, Llc Master oscillator-power amplifier drive laser with pre-pulse for EUV light source
DE102006006283B4 (de) * 2006-02-10 2015-05-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Thermisch stabiler Multilayer-Spiegel für den EUV-Spektralbereich
US8158960B2 (en) 2007-07-13 2012-04-17 Cymer, Inc. Laser produced plasma EUV light source
US8513629B2 (en) 2011-05-13 2013-08-20 Cymer, Llc Droplet generator with actuator induced nozzle cleaning
JPWO2008065821A1 (ja) * 2006-11-27 2010-03-04 株式会社ニコン 光学素子、これを用いた露光装置、及びデバイス製造方法
DE102006056035A1 (de) * 2006-11-28 2008-05-29 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Projektions-Mikrolithographie, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil
DE102007008448A1 (de) * 2007-02-19 2008-08-21 Carl Zeiss Smt Ag Verfahren zur Herstellung von Spiegelfacetten für einen Facettenspiegel
JP5295515B2 (ja) * 2007-03-30 2013-09-18 東京エレクトロン株式会社 載置台の表面処理方法
US20080318066A1 (en) * 2007-05-11 2008-12-25 Asml Holding N.V. Optical Component Fabrication Using Coated Substrates
US20080280539A1 (en) * 2007-05-11 2008-11-13 Asml Holding N.V. Optical component fabrication using amorphous oxide coated substrates
US7812329B2 (en) * 2007-12-14 2010-10-12 Cymer, Inc. System managing gas flow between chambers of an extreme ultraviolet (EUV) photolithography apparatus
US7655925B2 (en) * 2007-08-31 2010-02-02 Cymer, Inc. Gas management system for a laser-produced-plasma EUV light source
US7960701B2 (en) * 2007-12-20 2011-06-14 Cymer, Inc. EUV light source components and methods for producing, using and refurbishing same
US20090219497A1 (en) * 2008-02-28 2009-09-03 Carl Zeiss Smt Ag Optical device with stiff housing
US7872245B2 (en) * 2008-03-17 2011-01-18 Cymer, Inc. Systems and methods for target material delivery in a laser produced plasma EUV light source
DE102008000788A1 (de) * 2008-03-20 2009-09-24 Carl Zeiss Smt Ag Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage
BRPI0802096E2 (pt) 2008-05-30 2010-03-16 Da Silva Denivaldo Goncalves aperfeiçoamentos introduzidos em aparelho para alisamento de cabelos com escova acoplada
US8198612B2 (en) * 2008-07-31 2012-06-12 Cymer, Inc. Systems and methods for heating an EUV collector mirror
US8519366B2 (en) * 2008-08-06 2013-08-27 Cymer, Inc. Debris protection system having a magnetic field for an EUV light source
DE102008042212A1 (de) * 2008-09-19 2010-04-01 Carl Zeiss Smt Ag Reflektives optisches Element und Verfahren zu seiner Herstellung
US7641349B1 (en) 2008-09-22 2010-01-05 Cymer, Inc. Systems and methods for collector mirror temperature control using direct contact heat transfer
US8283643B2 (en) * 2008-11-24 2012-10-09 Cymer, Inc. Systems and methods for drive laser beam delivery in an EUV light source
JP5455661B2 (ja) * 2009-01-29 2014-03-26 ギガフォトン株式会社 極端紫外光源装置
US8969838B2 (en) * 2009-04-09 2015-03-03 Asml Netherlands B.V. Systems and methods for protecting an EUV light source chamber from high pressure source material leaks
US8237132B2 (en) * 2009-06-17 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for reducing down time of a lithography system
DE102009039400A1 (de) * 2009-08-31 2011-03-03 Carl Zeiss Laser Optics Gmbh Reflektives optisches Element zur Verwendung in einem EUV-System
DE102009040785A1 (de) * 2009-09-09 2011-03-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Substrat aus einer Aluminium-Silizium-Legierung oder kristallinem Silizium, Metallspiegel, Verfahren zu dessen Herstellung sowie dessen Verwendung
US8525139B2 (en) * 2009-10-27 2013-09-03 Lam Research Corporation Method and apparatus of halogen removal
US8232538B2 (en) * 2009-10-27 2012-07-31 Lam Research Corporation Method and apparatus of halogen removal using optimal ozone and UV exposure
JP5687488B2 (ja) 2010-02-22 2015-03-18 ギガフォトン株式会社 極端紫外光生成装置
JP2011222958A (ja) * 2010-03-25 2011-11-04 Komatsu Ltd ミラーおよび極端紫外光生成装置
US8263953B2 (en) 2010-04-09 2012-09-11 Cymer, Inc. Systems and methods for target material delivery protection in a laser produced plasma EUV light source
US9066412B2 (en) 2010-04-15 2015-06-23 Asml Netherlands B.V. Systems and methods for cooling an optic
WO2012013227A1 (en) * 2010-07-28 2012-02-02 Carl Zeiss Smt Gmbh Facet mirror device
US8462425B2 (en) 2010-10-18 2013-06-11 Cymer, Inc. Oscillator-amplifier drive laser with seed protection for an EUV light source
DE102010043498A1 (de) 2010-11-05 2012-05-10 Carl Zeiss Smt Gmbh Projektionsobjektiv einer für EUV ausgelegten mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zum optischen Justieren eines Projektionsobjektives
US8633459B2 (en) 2011-03-02 2014-01-21 Cymer, Llc Systems and methods for optics cleaning in an EUV light source
DE102011015141A1 (de) 2011-03-16 2012-09-20 Carl Zeiss Laser Optics Gmbh Verfahren zum Herstellen eines reflektiven optischen Bauelements für eine EUV-Projektionsbelichtungsanlage und derartiges Bauelement
US8604452B2 (en) 2011-03-17 2013-12-10 Cymer, Llc Drive laser delivery systems for EUV light source
EP2689427B1 (en) * 2011-03-23 2017-05-03 Carl Zeiss SMT GmbH Euv mirror arrangement, optical system comprising euv mirror arrangement and method for operating an optical system comprising an euv mirror arrangement
US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
DE102011087331A1 (de) * 2011-11-29 2013-01-10 Carl Zeiss Smt Gmbh Temperaturempfindliches optisches Element aus SiSiC-Verbund und Halterung hierfür sowie Verfahren zu seiner Herstellung
DE102012204142A1 (de) * 2012-03-16 2013-03-21 Carl Zeiss Smt Gmbh Kollektor
KR101887054B1 (ko) * 2012-03-23 2018-08-09 삼성전자주식회사 적외선 검출 장치 및 이를 포함하는 가열 조리 장치
US10185234B2 (en) * 2012-10-04 2019-01-22 Asml Netherlands B.V. Harsh environment optical element protection
DE102013204441A1 (de) * 2013-03-14 2014-04-03 Carl Zeiss Smt Gmbh Kollektor
CN104345569B (zh) * 2013-07-24 2017-03-29 中芯国际集成电路制造(上海)有限公司 极紫外光刻机光源系统及极紫外曝光方法
DE102013215541A1 (de) * 2013-08-07 2015-02-12 Carl Zeiss Smt Gmbh Spiegel, insbesondere für eine mikrolithographische Projektionsbelichtungsanlage
US9696467B2 (en) * 2014-01-31 2017-07-04 Corning Incorporated UV and DUV expanded cold mirrors
EP2905637A1 (en) 2014-02-07 2015-08-12 ASML Netherlands B.V. EUV optical element having blister-resistant multilayer cap
US9271381B2 (en) 2014-02-10 2016-02-23 Asml Netherlands B.V. Methods and apparatus for laser produced plasma EUV light source
US9506871B1 (en) 2014-05-25 2016-11-29 Kla-Tencor Corporation Pulsed laser induced plasma light source
KR101630050B1 (ko) * 2014-07-25 2016-06-13 삼성전기주식회사 적층 세라믹 전자부품
US9546901B2 (en) * 2014-08-19 2017-01-17 Asml Netherlands B.V. Minimizing grazing incidence reflections for reliable EUV power measurements having a light source comprising plural tubes with centerlines disposed between a radiation region and corresponding photodetector modules
CN105573061B (zh) * 2014-10-16 2018-03-06 中芯国际集成电路制造(上海)有限公司 Euv光源和曝光装置
US9541840B2 (en) * 2014-12-18 2017-01-10 Asml Netherlands B.V. Faceted EUV optical element
DE102015208831B4 (de) * 2015-05-12 2024-06-06 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines EUV-Moduls, EUV-Modul und EUV-Lithographiesystem
CN106154378A (zh) * 2016-08-30 2016-11-23 哈尔滨工业大学 一种SiC球面反射镜及利用该反射镜聚焦46.9nm激光的方法
DE102016217735A1 (de) * 2016-09-16 2018-03-22 Carl Zeiss Smt Gmbh Komponente für eine Spiegelanordnung für die EUV-Lithographie
US10732378B2 (en) * 2017-01-25 2020-08-04 Flir Systems, Inc. Mounting optical elements in optical systems
CN109407188B (zh) * 2017-08-17 2021-08-20 中国科学院长春光学精密机械与物理研究所 碳纤维复合材料反射镜的制备方法及相关反射镜
EP3704546A1 (en) * 2017-10-30 2020-09-09 ASML Holding N.V. Assembly for use in semiconductor photolithography and method of manufacturing same
DE102018207759A1 (de) * 2018-05-17 2019-11-21 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines Substrats für ein optisches Element und reflektierendes optisches Element
JP7443337B2 (ja) * 2018-08-27 2024-03-05 マテリオン コーポレイション ディスプレイ製造用のｕｖ反射ミラー
US12078934B2 (en) * 2018-09-25 2024-09-03 Asml Netherlands B.V. Laser system for target metrology and alteration in an EUV light source
US11226438B2 (en) 2018-10-03 2022-01-18 Corning Incorporated Reflective optical element
CN117891139A (zh) * 2024-01-17 2024-04-16 中国科学院长春光学精密机械与物理研究所 一种极紫外光源收集镜的制备方法及加工设备
US20250258436A1 (en) * 2024-02-09 2025-08-14 Carl Zeiss Smt Gmbh Euv collector for use in an euv projection exposure apparatus
CN119882170B (zh) * 2025-03-12 2025-10-10 中国科学院长春光学精密机械与物理研究所 反射镜的镜面曲率校正装置及其组装方法

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4555168A (en) * 1981-08-24 1985-11-26 Walter Meier Device for projecting steroscopic, anamorphotically compressed pairs of images on to a spherically curved wide-screen surface
DE3427611A1 (de) * 1984-07-26 1988-06-09 Bille Josef Laserstrahl-lithograph
US4958363A (en) * 1986-08-15 1990-09-18 Nelson Robert S Apparatus for narrow bandwidth and multiple energy x-ray imaging
US5310603A (en) * 1986-10-01 1994-05-10 Canon Kabushiki Kaisha Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray
JP2566564B2 (ja) * 1986-10-01 1996-12-25 キヤノン株式会社 軟ｘ線又は真空紫外線用多層膜反射鏡
JPH02168614A (ja) * 1988-09-27 1990-06-28 Mitsubishi Electric Corp Ｘ線露光用マスクおよびそれを用いた露光方法
FR2682486B1 (fr) * 1991-10-15 1993-11-12 Commissariat A Energie Atomique Miroir dielectrique interferentiel et procede de fabrication d'un tel miroir.
JPH06140303A (ja) * 1992-10-23 1994-05-20 Hitachi Ltd 投影露光装置
JPH0868897A (ja) * 1994-08-29 1996-03-12 Nikon Corp 反射鏡およびその製造方法
US5597613A (en) * 1994-12-30 1997-01-28 Honeywell Inc. Scale-up process for replicating large area diffractive optical elements
US5630902A (en) * 1994-12-30 1997-05-20 Honeywell Inc. Apparatus for use in high fidelty replication of diffractive optical elements
US5719706A (en) * 1995-03-15 1998-02-17 Matsushita Electric Industrial Co., Ltd. Illuminating apparatus, projection lens, and display apparatus including the illumination apparatus and the projection lens
US5870176A (en) * 1996-06-19 1999-02-09 Sandia Corporation Maskless lithography
US6423879B1 (en) * 1997-10-02 2002-07-23 Exxonmobil Oil Corporation Selective para-xylene production by toluene methylation
US5958605A (en) 1997-11-10 1999-09-28 Regents Of The University Of California Passivating overcoat bilayer for multilayer reflective coatings for extreme ultraviolet lithography
SE9800665D0 (sv) * 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
DE10138313A1 (de) * 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
DE19830449A1 (de) * 1998-07-08 2000-01-27 Zeiss Carl Fa SiO¶2¶-beschichtetes Spiegelsubstrat für EUV
US6210865B1 (en) * 1998-08-06 2001-04-03 Euv Llc Extreme-UV lithography condenser
US6989924B1 (en) * 1998-08-06 2006-01-24 Midwest Research Institute Durable corrosion and ultraviolet-resistant silver mirror
JP2000147198A (ja) * 1998-09-08 2000-05-26 Nikon Corp 多層膜反射鏡及びその製造方法
US6295164B1 (en) * 1998-09-08 2001-09-25 Nikon Corporation Multi-layered mirror
US6567450B2 (en) * 1999-12-10 2003-05-20 Cymer, Inc. Very narrow band, two chamber, high rep rate gas discharge laser system
JP2000162415A (ja) * 1998-09-22 2000-06-16 Nikon Corp 反射鏡の製造方法又は反射型照明装置又は半導体露光装置
JP2000098114A (ja) * 1998-09-22 2000-04-07 Nikon Corp 多光源形成反射鏡の製造方法及び該反射鏡を用いた光学装置
JP2000162414A (ja) * 1998-09-22 2000-06-16 Nikon Corp 反射鏡の製造方法又は反射型照明装置又は半導体露光装置
US6229652B1 (en) * 1998-11-25 2001-05-08 The Regents Of The University Of California High reflectance and low stress Mo2C/Be multilayers
US6140255A (en) * 1998-12-15 2000-10-31 Advanced Micro Devices, Inc. Method for depositing silicon nitride using low temperatures
US6498685B1 (en) * 1999-01-11 2002-12-24 Kenneth C. Johnson Maskless, microlens EUV lithography system
EP1085367A4 (en) * 1999-03-31 2003-08-27 Matsushita Electric Industrial Co Ltd LIGHT FOUNTAIN, ADJUSTMENT DEVICE AND PRODUCTION METHOD THEREFOR, AND EXPOSURE AND PROJECTION DEVICE PROVIDED WITH SUCH A LIGHT FOUNTAIN
US6625191B2 (en) * 1999-12-10 2003-09-23 Cymer, Inc. Very narrow band, two chamber, high rep rate gas discharge laser system
US6549551B2 (en) * 1999-09-27 2003-04-15 Cymer, Inc. Injection seeded laser with precise timing control
US6228512B1 (en) * 1999-05-26 2001-05-08 The Regents Of The University Of California MoRu/Be multilayers for extreme ultraviolet applications
TWI267704B (en) * 1999-07-02 2006-12-01 Asml Netherlands Bv Capping layer for EUV optical elements
US6319635B1 (en) * 1999-12-06 2001-11-20 The Regents Of The University Of California Mitigation of substrate defects in reticles using multilayer buffer layers
JP2002006096A (ja) * 2000-06-23 2002-01-09 Nikon Corp 電磁波発生装置、これを用いた半導体製造装置並びに半導体デバイスの製造方法
TW575771B (en) * 2000-07-13 2004-02-11 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2002072267A (ja) * 2000-08-25 2002-03-12 National Institute For Materials Science 光機能素子、該素子用単結晶基板、およびその使用方法
JP5371162B2 (ja) * 2000-10-13 2013-12-18 三星電子株式会社 反射型フォトマスク
US20040070726A1 (en) * 2000-11-03 2004-04-15 Andrew Ishak Waterman's sunglass lens
US6902773B1 (en) * 2000-11-21 2005-06-07 Hitachi Global Storage Technologies Netherlands, B.V. Energy gradient ion beam deposition of carbon overcoats on rigid disk media for magnetic recordings
JP4196676B2 (ja) * 2001-02-23 2008-12-17 株式会社ニコン 多面反射鏡及びその製造方法
JP2002299228A (ja) * 2001-04-03 2002-10-11 Nikon Corp レチクル、それを用いた露光装置及び露光方法
JP2002318334A (ja) * 2001-04-24 2002-10-31 Nikon Corp 反射鏡の保持方法、反射鏡及び露光装置
US7439530B2 (en) * 2005-06-29 2008-10-21 Cymer, Inc. LPP EUV light source drive laser system
US7843632B2 (en) * 2006-08-16 2010-11-30 Cymer, Inc. EUV optics
DE10123768C2 (de) * 2001-05-16 2003-04-30 Infineon Technologies Ag Verfahren zur Herstellung einer lithographischen Reflexionsmaske insbesondere für die Strukturierung eines Halbleiterwafers sowie Reflexionsmaske
NL1018139C2 (nl) * 2001-05-23 2002-11-26 Stichting Fund Ond Material Meerlagenspiegel voor straling in het XUV-golflengtegebied en werkwijze voor de vervaardiging daarvan.
US20030008148A1 (en) * 2001-07-03 2003-01-09 Sasa Bajt Optimized capping layers for EUV multilayers
EP1282011B1 (de) * 2001-08-01 2006-11-22 Carl Zeiss SMT AG Reflektives Projektionsobjektiv für EUV-Photolithographie
US6634760B2 (en) * 2001-08-27 2003-10-21 The Regents Of The University Of California Low-cost method for producing extreme ultraviolet lithography optics
DE10150874A1 (de) * 2001-10-04 2003-04-30 Zeiss Carl Optisches Element und Verfahren zu dessen Herstellung sowie ein Lithographiegerät und ein Verfahren zur Herstellung eines Halbleiterbauelements
US20040016718A1 (en) * 2002-03-20 2004-01-29 Ruey-Jen Hwu Micro-optic elements and method for making the same
AU2003218416A1 (en) * 2002-04-05 2003-10-27 Joseph Bronner Masonry connectors and twist-on hook and method
DE10219514A1 (de) * 2002-04-30 2003-11-13 Zeiss Carl Smt Ag Beleuchtungssystem, insbesondere für die EUV-Lithographie
JP3919599B2 (ja) * 2002-05-17 2007-05-30 キヤノン株式会社 光学素子、当該光学素子を有する光源装置及び露光装置
US20040036993A1 (en) * 2002-05-17 2004-02-26 Tin Hla Ngwe Transparent heat mirror for solar and heat gain and methods of making
US20030224620A1 (en) * 2002-05-31 2003-12-04 Kools Jacques C.S. Method and apparatus for smoothing surfaces on an atomic scale
TWI227380B (en) * 2002-06-06 2005-02-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
JP2004056125A (ja) * 2002-06-20 2004-02-19 Nikon Corp 個別アクチュエータを有する反射投影光学系
US6880942B2 (en) * 2002-06-20 2005-04-19 Nikon Corporation Adaptive optic with discrete actuators for continuous deformation of a deformable mirror system
EP1387220A3 (en) * 2002-07-29 2007-01-03 Canon Kabushiki Kaisha Adjustment method and apparatus of optical system, and exposure apparatus
JP2006506827A (ja) * 2002-11-16 2006-02-23 エルジー イノテック カンパニー リミテッド 光デバイス及びその製造方法
SG135934A1 (en) * 2002-12-20 2007-10-29 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and device manufactured thereby
US7217940B2 (en) * 2003-04-08 2007-05-15 Cymer, Inc. Collector for EUV light source
US6992306B2 (en) * 2003-04-15 2006-01-31 Canon Kabushiki Kaisha Temperature adjustment apparatus, exposure apparatus having the same, and device fabricating method
JP4729661B2 (ja) * 2003-07-11 2011-07-20 奇美電子股▲ふん▼有限公司 ヒロックが無いアルミニウム層及びその形成方法
WO2005031397A2 (en) * 2003-09-26 2005-04-07 Zetetic Institute Catoptric and catadioptric imaging systems with pellicle and aperture-array beam-splitters and non-adaptive and adaptive catoptric surfaces
JP2005099587A (ja) * 2003-09-26 2005-04-14 Sanyo Electric Co Ltd 反射型光学部材及びその製造方法及び多灯式照明装置
US6822251B1 (en) * 2003-11-10 2004-11-23 University Of Central Florida Research Foundation Monolithic silicon EUV collector
US7193228B2 (en) * 2004-03-10 2007-03-20 Cymer, Inc. EUV light source optical elements
US7087914B2 (en) * 2004-03-17 2006-08-08 Cymer, Inc High repetition rate laser produced plasma EUV light source
JP2006047384A (ja) * 2004-07-30 2006-02-16 Dainippon Printing Co Ltd 露光装置
FR2877104B1 (fr) * 2004-10-27 2006-12-29 Sagem Dispositif d'imagerie ou d'insolation, notamment pour la realisation d'un micro-circuit electronique
EP1808509A4 (en) * 2004-11-04 2009-11-04 Asahi Glass Co Ltd ION BEAM SPUTTER DEVICE AND METHOD FOR FORMING A MULTILAYER FILM FOR REFLECTING MASK ROLLS FOR EUV LITHOGRAPHY
US7136214B2 (en) * 2004-11-12 2006-11-14 Asml Holding N.V. Active faceted mirror system for lithography
JP2006173490A (ja) * 2004-12-17 2006-06-29 Nikon Corp 光学素子及びこれを用いた投影露光装置
JP2006170916A (ja) * 2004-12-17 2006-06-29 Nikon Corp 光学素子及びこれを用いた投影露光装置
DE102004062289B4 (de) * 2004-12-23 2007-07-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Thermisch stabiler Multilayer-Spiegel für den EUV-Spektralbereich
EP1837897A4 (en) * 2005-01-12 2008-04-16 Nikon Corp LASER PLASMA EUV LIGHT SOURCE, TARGET MEMBER, MANUFACTURING PROCESS FOR A TARGET MEMBER, TARGET PROCESSING METHOD AND EUV EXPOSURE SYSTEM
US7336416B2 (en) * 2005-04-27 2008-02-26 Asml Netherlands B.V. Spectral purity filter for multi-layer mirror, lithographic apparatus including such multi-layer mirror, method for enlarging the ratio of desired radiation and undesired radiation, and device manufacturing method
US7153892B2 (en) * 2005-05-12 2006-12-26 Ecology Coating, Inc. Environmentally friendly, actinic radiation curable coating compositions for coating thermoplastic olefin objects and methods, processes and assemblages for coating thereof
DE102005027697A1 (de) * 2005-06-15 2006-12-28 Infineon Technologies Ag EUV-Reflexionsmaske und Verfahren zu deren Herstellung
US7348193B2 (en) * 2005-06-30 2008-03-25 Corning Incorporated Hermetic seals for micro-electromechanical system devices
JP2007335444A (ja) * 2006-06-12 2007-12-27 Toshiba Corp 光学素子及び光学装置
US7960701B2 (en) * 2007-12-20 2011-06-14 Cymer, Inc. EUV light source components and methods for producing, using and refurbishing same
JP5487118B2 (ja) * 2008-02-15 2014-05-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィのための投影露光装置に使用するファセットミラー
US8445876B2 (en) * 2008-10-24 2013-05-21 Gigaphoton Inc. Extreme ultraviolet light source apparatus
JP5946612B2 (ja) * 2010-10-08 2016-07-06 ギガフォトン株式会社 ミラー、ミラー装置、レーザ装置および極端紫外光生成装置

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TWI367611B (en) 2012-07-01
US20110075253A1 (en) 2011-03-31
US8598549B2 (en) 2013-12-03
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US8907310B2 (en) 2014-12-09
TW201213892A (en) 2012-04-01

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