KR20130100325A - 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들 - Google Patents

스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들 Download PDF

Info

Publication number
KR20130100325A
KR20130100325A KR1020137011057A KR20137011057A KR20130100325A KR 20130100325 A KR20130100325 A KR 20130100325A KR 1020137011057 A KR1020137011057 A KR 1020137011057A KR 20137011057 A KR20137011057 A KR 20137011057A KR 20130100325 A KR20130100325 A KR 20130100325A
Authority
KR
South Korea
Prior art keywords
substrate
target
relative position
coating
rotatable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020137011057A
Other languages
English (en)
Korean (ko)
Inventor
마르쿠스 벤더
마르쿠스 하니카
에벨린 쉐어
파비오 피이랄리시
구이도 마안케
랄프 린덴베르크
안드레아스 로프
콘라트 슈바니츠
지안 리우
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20130100325A publication Critical patent/KR20130100325A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3473—Composition uniformity or desired gradient

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020137011057A 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들 Ceased KR20130100325A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10184028A EP2437280A1 (en) 2010-09-30 2010-09-30 Systems and methods for forming a layer of sputtered material
EP10184028.8 2010-09-30
PCT/EP2011/062674 WO2012041557A1 (en) 2010-09-30 2011-07-22 Systems and methods for forming a layer of sputtered material

Related Child Applications (2)

Application Number Title Priority Date Filing Date
KR20157003837A Division KR20150030769A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들
KR1020187028718A Division KR20180112124A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들

Publications (1)

Publication Number Publication Date
KR20130100325A true KR20130100325A (ko) 2013-09-10

Family

ID=43221918

Family Applications (6)

Application Number Title Priority Date Filing Date
KR1020137011057A Ceased KR20130100325A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들
KR1020187026060A Ceased KR20180102229A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들
KR1020207031663A Ceased KR20200127061A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들
KR20157003837A Ceased KR20150030769A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들
KR1020207004337A Ceased KR20200018739A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들
KR1020187028718A Ceased KR20180112124A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들

Family Applications After (5)

Application Number Title Priority Date Filing Date
KR1020187026060A Ceased KR20180102229A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들
KR1020207031663A Ceased KR20200127061A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들
KR20157003837A Ceased KR20150030769A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들
KR1020207004337A Ceased KR20200018739A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들
KR1020187028718A Ceased KR20180112124A (ko) 2010-09-30 2011-07-22 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들

Country Status (7)

Country Link
US (2) US20120080309A1 (enExample)
EP (2) EP2437280A1 (enExample)
JP (2) JP5907971B2 (enExample)
KR (6) KR20130100325A (enExample)
CN (2) CN104658847A (enExample)
TW (2) TWI561653B (enExample)
WO (1) WO2012041557A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160038809A (ko) * 2014-09-30 2016-04-07 시바우라 메카트로닉스 가부시끼가이샤 성막 장치 및 성막 기판 제조 방법
KR20160112174A (ko) * 2015-03-18 2016-09-28 (주)에스엔텍 기재의 측면 증착이 용이한 스퍼터링 장치 및 스퍼터링 방법
KR20170044259A (ko) * 2015-10-14 2017-04-25 삼성디스플레이 주식회사 스퍼터링 장치
KR20170068706A (ko) * 2015-12-09 2017-06-20 삼성디스플레이 주식회사 스퍼터링 장치
KR20190087575A (ko) * 2016-11-29 2019-07-24 솔레라스 어드밴스드 코팅스 비브이비에이 보편적으로 장착 가능한 엔드 블록
KR20190113898A (ko) * 2017-03-17 2019-10-08 닛신덴키 가부시키 가이샤 스퍼터링 장치

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20120044050A (ko) * 2010-10-27 2012-05-07 주식회사 에이스테크놀로지 Ｒｆ 장비 도금 방법 및 이에 사용되는 스퍼터링 장치
CN103132032A (zh) * 2013-03-15 2013-06-05 上海和辉光电有限公司 一种用于减少ito溅射损伤衬底的溅射设备及其方法
CN103681975B (zh) * 2013-12-27 2017-01-25 柳州百韧特先进材料有限公司 一种制备cigs太阳能电池的方法
US9988707B2 (en) 2014-05-30 2018-06-05 Ppg Industries Ohio, Inc. Transparent conducting indium doped tin oxide
WO2016005476A1 (en) 2014-07-09 2016-01-14 Soleras Advanced Coatings Bvba Sputter device with moving target
JP6044602B2 (ja) * 2014-07-11 2016-12-14 トヨタ自動車株式会社 成膜装置
CN105463386B (zh) * 2014-09-30 2018-10-12 芝浦机械电子装置株式会社 成膜装置及成膜基板制造方法
WO2016095976A1 (en) * 2014-12-16 2016-06-23 Applied Materials, Inc. Apparatus and method for coating a substrate with a movable sputter assembly and control over power parameters
CN105773462B (zh) * 2016-01-07 2019-03-29 北京师范大学 一种基于离子束技术提高抛光光学玻璃的金刚石砂轮棒寿命的方法及设备
KR101678893B1 (ko) * 2016-02-01 2016-11-23 (주)에스엔텍 원통형 스퍼터링 캐소드 장치 및 이를 이용한 박막 증착 방법
JP6380483B2 (ja) 2016-08-10 2018-08-29 トヨタ自動車株式会社 成膜装置
KR102651759B1 (ko) * 2016-10-11 2024-03-29 삼성디스플레이 주식회사 증착장치
KR20190077575A (ko) * 2016-11-22 2019-07-03 어플라이드 머티어리얼스, 인코포레이티드 기판 상으로의 층 증착을 위한 장치 및 방법
CN110785512A (zh) * 2017-06-26 2020-02-11 应用材料公司 可移动掩蔽元件
DE102018115516A1 (de) * 2017-06-28 2019-01-03 Solayer Gmbh Sputtervorrichtung und Sputterverfahren zur Beschichtung von dreidimensional geformten Substratoberflächen
DE102017116044A1 (de) * 2017-07-17 2019-01-17 RF360 Europe GmbH Sputtervorrichtung und Verfahren zur Verwendung
JP7202814B2 (ja) 2018-08-31 2023-01-12 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7202815B2 (ja) 2018-08-31 2023-01-12 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229015B2 (ja) * 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7242293B2 (ja) 2018-12-27 2023-03-20 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229014B2 (ja) 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229016B2 (ja) 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7220562B2 (ja) 2018-12-27 2023-02-10 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
CN113493902A (zh) * 2020-03-19 2021-10-12 中微半导体设备(上海)股份有限公司 磁控溅射镀膜装置及其工作方法
CN114075650A (zh) * 2020-08-18 2022-02-22 群创光电股份有限公司 曲面基板的镀膜装置及其镀膜方法
WO2022078592A1 (en) * 2020-10-14 2022-04-21 Applied Materials, Inc. Sputter deposition source, deposition apparatus and method of coating a substrate
JP7614143B2 (ja) 2022-08-03 2025-01-15 株式会社アルバック 成膜装置及び成膜方法
CN115896721B (zh) * 2022-11-11 2025-07-25 华中科技大学 一种用于调控高熵合金元素比例的磁控溅射方法及系统

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4536584B2 (ja) * 2004-05-05 2010-09-01 アプライド マテリアルズ ゲーエムベーハー ウント ツェーオー カーゲー 回転可能なマグネトロンの大面積アセンブリを有するコーター

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4478702A (en) * 1984-01-17 1984-10-23 Ppg Industries, Inc. Anode for magnetic sputtering apparatus
JPS6270568A (ja) * 1985-09-25 1987-04-01 Hitachi Ltd スパツタ方法
JPS63162862A (ja) * 1986-12-26 1988-07-06 Hitachi Ltd スパツタ装置
JPH0681145A (ja) * 1992-08-31 1994-03-22 Shimadzu Corp マグネトロンスパッタ装置
US5338422A (en) * 1992-09-29 1994-08-16 The Boc Group, Inc. Device and method for depositing metal oxide films
US5616225A (en) * 1994-03-23 1997-04-01 The Boc Group, Inc. Use of multiple anodes in a magnetron for improving the uniformity of its plasma
US6416635B1 (en) * 1995-07-24 2002-07-09 Tokyo Electron Limited Method and apparatus for sputter coating with variable target to substrate spacing
JP2001172764A (ja) * 1999-12-13 2001-06-26 Matsushita Electric Ind Co Ltd スパッタリング方法及びスパッタリング装置
JP2001234336A (ja) * 2000-02-18 2001-08-31 Ulvac Japan Ltd スパッタリング方法及びスパッタリング装置
JP2003183823A (ja) * 2001-12-17 2003-07-03 Sharp Corp スパッタ装置
JP4437290B2 (ja) * 2003-05-14 2010-03-24 シーワイジー技術研究所株式会社 スパッタ装置
JP4246546B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタ源、スパッタリング装置、及びスパッタリング方法
JP4246547B2 (ja) * 2003-05-23 2009-04-02 株式会社アルバック スパッタリング装置、及びスパッタリング方法
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
JP4721878B2 (ja) * 2005-11-22 2011-07-13 キヤノンアネルバ株式会社 スパッタリング装置
KR101213888B1 (ko) * 2006-05-08 2012-12-18 엘지디스플레이 주식회사 스퍼터링 장치, 그 구동 방법 및 이를 이용한 패널 제조방법
DE102006036403B4 (de) * 2006-08-02 2009-11-19 Von Ardenne Anlagentechnik Gmbh Verfahren zur Beschichtung eines Substrats mit einer definierten Schichtdickenverteilung
CN101528972B (zh) * 2006-10-24 2013-06-19 株式会社爱发科 薄膜形成方法及薄膜形成装置
WO2008108185A1 (ja) * 2007-03-01 2008-09-12 Ulvac, Inc. 薄膜形成方法及び薄膜形成装置
KR20090079175A (ko) * 2008-01-16 2009-07-21 어플라이드 머티어리얼스, 인코포레이티드 스퍼터 코팅 장치
EP2090673A1 (en) * 2008-01-16 2009-08-19 Applied Materials, Inc. Sputter coating device
US20090178919A1 (en) * 2008-01-16 2009-07-16 Applied Materials, Inc. Sputter coating device
CN101285169B (zh) * 2008-05-16 2010-12-22 昆明理工大学 高真空离子束溅镀靶材利用率增强装置
WO2010090197A1 (ja) * 2009-02-04 2010-08-12 シャープ株式会社 透明導電膜形成体及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4536584B2 (ja) * 2004-05-05 2010-09-01 アプライド マテリアルズ ゲーエムベーハー ウント ツェーオー カーゲー 回転可能なマグネトロンの大面積アセンブリを有するコーター

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
일본 특허공보 특허 제 4536584호(2010.09.01.) 1부. *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160038809A (ko) * 2014-09-30 2016-04-07 시바우라 메카트로닉스 가부시끼가이샤 성막 장치 및 성막 기판 제조 방법
KR20160112174A (ko) * 2015-03-18 2016-09-28 (주)에스엔텍 기재의 측면 증착이 용이한 스퍼터링 장치 및 스퍼터링 방법
KR20170044259A (ko) * 2015-10-14 2017-04-25 삼성디스플레이 주식회사 스퍼터링 장치
KR20170068706A (ko) * 2015-12-09 2017-06-20 삼성디스플레이 주식회사 스퍼터링 장치
KR20190087575A (ko) * 2016-11-29 2019-07-24 솔레라스 어드밴스드 코팅스 비브이비에이 보편적으로 장착 가능한 엔드 블록
KR20190113898A (ko) * 2017-03-17 2019-10-08 닛신덴키 가부시키 가이샤 스퍼터링 장치
US11328913B2 (en) 2017-03-17 2022-05-10 Nissin Electric Co., Ltd. Sputtering device

Also Published As

Publication number Publication date
KR20200018739A (ko) 2020-02-19
EP2622627B1 (en) 2018-09-05
KR20150030769A (ko) 2015-03-20
US20120080309A1 (en) 2012-04-05
EP2622627A1 (en) 2013-08-07
CN104658847A (zh) 2015-05-27
KR20200127061A (ko) 2020-11-09
TWI561653B (en) 2016-12-11
KR20180102229A (ko) 2018-09-14
TW201525170A (zh) 2015-07-01
JP2013544958A (ja) 2013-12-19
WO2012041557A1 (en) 2012-04-05
US20130284590A1 (en) 2013-10-31
CN102934197A (zh) 2013-02-13
EP2437280A1 (en) 2012-04-04
CN102934197B (zh) 2016-05-04
JP5907971B2 (ja) 2016-04-26
JP6258883B2 (ja) 2018-01-10
KR20180112124A (ko) 2018-10-11
TWI565818B (zh) 2017-01-11
JP2015172240A (ja) 2015-10-01
TW201213578A (en) 2012-04-01

Similar Documents

Publication Publication Date Title
KR20130100325A (ko) 스퍼터링된 재료의 층을 형성하기 위한 시스템들 및 방법들
TWI578371B (zh) 用來塗布基板之方法及塗布機
EP2855729B1 (en) Method for coating a substrate and coater

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20130429

Patent event code: PA01051R01D

Comment text: International Patent Application

AMND Amendment
AMND Amendment
PG1501 Laying open of application
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20150212

A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20160722

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20171102

Patent event code: PE09021S01D

AMND Amendment
E90F Notification of reason for final refusal
PE0902 Notice of grounds for rejection

Comment text: Final Notice of Reason for Refusal

Patent event date: 20180220

Patent event code: PE09021S02D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20180612

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20180220

Comment text: Final Notice of Reason for Refusal

Patent event code: PE06011S02I

Patent event date: 20171102

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

AMND Amendment
PX0901 Re-examination

Patent event code: PX09011S01I

Patent event date: 20180612

Comment text: Decision to Refuse Application

Patent event code: PX09012R01I

Patent event date: 20180420

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20171228

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20130820

Comment text: Amendment to Specification, etc.

Patent event code: PX09012R01I

Patent event date: 20130502

Comment text: Amendment to Specification, etc.

PX0601 Decision of rejection after re-examination

Comment text: Decision to Refuse Application

Patent event code: PX06014S01D

Patent event date: 20180903

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20180810

Comment text: Decision to Refuse Application

Patent event code: PX06011S01I

Patent event date: 20180612

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20180420

Comment text: Final Notice of Reason for Refusal

Patent event code: PX06013S02I

Patent event date: 20180220

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20171228

Comment text: Notification of reason for refusal

Patent event code: PX06013S01I

Patent event date: 20171102

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20130820

Comment text: Amendment to Specification, etc.

Patent event code: PX06012R01I

Patent event date: 20130502

A107 Divisional application of patent
J201 Request for trial against refusal decision
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20181004

PJ0201 Trial against decision of rejection

Patent event date: 20181004

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20180903

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Patent event date: 20180612

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20191004

Appeal identifier: 2018101004125

Request date: 20181004

J301 Trial decision

Free format text: TRIAL NUMBER: 2018101004125; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20181004

Effective date: 20191004

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20191004

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20181004

Decision date: 20191004

Appeal identifier: 2018101004125

PC1202 Submission of document of withdrawal before decision of registration

Comment text: [Withdrawal of Procedure relating to Patent, etc.] Withdrawal (Abandonment)

Patent event code: PC12021R01D

Patent event date: 20191101

PJ1201 Withdrawal of trial

Patent event code: PJ12011R01D

Patent event date: 20191101

Comment text: Written Withdrawal of Request for Trial

Appeal identifier: 2018101004125

Request date: 20181004

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20191004