JP5907971B2 - スパッタされた材料の層を形成するシステムおよび方法 - Google Patents

スパッタされた材料の層を形成するシステムおよび方法 Download PDF

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Publication number
JP5907971B2
JP5907971B2 JP2013530638A JP2013530638A JP5907971B2 JP 5907971 B2 JP5907971 B2 JP 5907971B2 JP 2013530638 A JP2013530638 A JP 2013530638A JP 2013530638 A JP2013530638 A JP 2013530638A JP 5907971 B2 JP5907971 B2 JP 5907971B2
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substrate
target
relative position
rotating
rotating target
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JP2013544958A5 (enExample
JP2013544958A (ja
Inventor
マルクス ベンダー，
マルクス ベンダー，
マルクス ハニカ，
マルクス ハニカ，
エヴリン シェア，
エヴリン シェア，
ファビオ ピエラリージ，
ファビオ ピエラリージ，
ギド マンカ，
ギド マンカ，
ラルフ リンデンベルク，
ラルフ リンデンベルク，
アンドレアス ロップ，
アンドレアス ロップ，
コンラート シュワニッツ，
コンラート シュワニッツ，
チエン リュー，
チエン リュー，
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3473—Composition uniformity or desired gradient

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2013530638A 2010-09-30 2011-07-22 スパッタされた材料の層を形成するシステムおよび方法 Active JP5907971B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10184028.8 2010-09-30
EP10184028A EP2437280A1 (en) 2010-09-30 2010-09-30 Systems and methods for forming a layer of sputtered material
PCT/EP2011/062674 WO2012041557A1 (en) 2010-09-30 2011-07-22 Systems and methods for forming a layer of sputtered material

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015032571A Division JP6258883B2 (ja) 2010-09-30 2015-02-23 スパッタされた材料の層を形成するシステムおよび方法

Publications (3)

Publication Number Publication Date
JP2013544958A JP2013544958A (ja) 2013-12-19
JP2013544958A5 JP2013544958A5 (enExample) 2014-09-11
JP5907971B2 true JP5907971B2 (ja) 2016-04-26

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JP2013530638A Active JP5907971B2 (ja) 2010-09-30 2011-07-22 スパッタされた材料の層を形成するシステムおよび方法
JP2015032571A Active JP6258883B2 (ja) 2010-09-30 2015-02-23 スパッタされた材料の層を形成するシステムおよび方法

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Country Status (7)

Country Link
US (2) US20120080309A1 (enExample)
EP (2) EP2437280A1 (enExample)
JP (2) JP5907971B2 (enExample)
KR (6) KR20180102229A (enExample)
CN (2) CN102934197B (enExample)
TW (2) TWI561653B (enExample)
WO (1) WO2012041557A1 (enExample)

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JP7202815B2 (ja) 2018-08-31 2023-01-12 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7202814B2 (ja) 2018-08-31 2023-01-12 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229015B2 (ja) * 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7242293B2 (ja) 2018-12-27 2023-03-20 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229016B2 (ja) 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7220562B2 (ja) 2018-12-27 2023-02-10 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229014B2 (ja) 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
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Also Published As

Publication number Publication date
TWI561653B (en) 2016-12-11
TW201213578A (en) 2012-04-01
KR20150030769A (ko) 2015-03-20
WO2012041557A1 (en) 2012-04-05
EP2622627B1 (en) 2018-09-05
US20130284590A1 (en) 2013-10-31
KR20200127061A (ko) 2020-11-09
CN102934197A (zh) 2013-02-13
EP2437280A1 (en) 2012-04-04
CN104658847A (zh) 2015-05-27
JP2015172240A (ja) 2015-10-01
KR20200018739A (ko) 2020-02-19
KR20180112124A (ko) 2018-10-11
EP2622627A1 (en) 2013-08-07
KR20130100325A (ko) 2013-09-10
TW201525170A (zh) 2015-07-01
US20120080309A1 (en) 2012-04-05
TWI565818B (zh) 2017-01-11
JP2013544958A (ja) 2013-12-19
KR20180102229A (ko) 2018-09-14
JP6258883B2 (ja) 2018-01-10
CN102934197B (zh) 2016-05-04

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