CN102934197B - 用于形成溅射材料层的系统和方法 - Google Patents

用于形成溅射材料层的系统和方法 Download PDF

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Publication number
CN102934197B
CN102934197B CN201180027703.8A CN201180027703A CN102934197B CN 102934197 B CN102934197 B CN 102934197B CN 201180027703 A CN201180027703 A CN 201180027703A CN 102934197 B CN102934197 B CN 102934197B
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substrate
target
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predetermined
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Chinese (zh)
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CN102934197A (zh
Inventor
马库斯·班德尔
马卡斯·哈尼卡
伊夫林·希尔
法毕奥·皮拉里斯
盖德·曼克
拉尔夫·林德伯格
安德里亚斯·鲁普
科拉德·施沃恩特兹
刘健
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Applied Materials Inc
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Applied Materials Inc
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3473—Composition uniformity or desired gradient

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201180027703.8A 2010-09-30 2011-07-22 用于形成溅射材料层的系统和方法 Active CN102934197B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10184028.8 2010-09-30
EP10184028A EP2437280A1 (en) 2010-09-30 2010-09-30 Systems and methods for forming a layer of sputtered material
PCT/EP2011/062674 WO2012041557A1 (en) 2010-09-30 2011-07-22 Systems and methods for forming a layer of sputtered material

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201510091977.3A Division CN104658847A (zh) 2010-09-30 2011-07-22 用于形成溅射材料层的系统和方法

Publications (2)

Publication Number Publication Date
CN102934197A CN102934197A (zh) 2013-02-13
CN102934197B true CN102934197B (zh) 2016-05-04

Family

ID=43221918

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201510091977.3A Pending CN104658847A (zh) 2010-09-30 2011-07-22 用于形成溅射材料层的系统和方法
CN201180027703.8A Active CN102934197B (zh) 2010-09-30 2011-07-22 用于形成溅射材料层的系统和方法

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CN201510091977.3A Pending CN104658847A (zh) 2010-09-30 2011-07-22 用于形成溅射材料层的系统和方法

Country Status (7)

Country Link
US (2) US20120080309A1 (enExample)
EP (2) EP2437280A1 (enExample)
JP (2) JP5907971B2 (enExample)
KR (6) KR20200127061A (enExample)
CN (2) CN104658847A (enExample)
TW (2) TWI565818B (enExample)
WO (1) WO2012041557A1 (enExample)

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JP6411975B2 (ja) * 2014-09-30 2018-10-24 芝浦メカトロニクス株式会社 成膜装置及び成膜基板製造方法
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JP7202815B2 (ja) 2018-08-31 2023-01-12 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7202814B2 (ja) 2018-08-31 2023-01-12 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229016B2 (ja) 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229014B2 (ja) 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7220562B2 (ja) 2018-12-27 2023-02-10 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7229015B2 (ja) * 2018-12-27 2023-02-27 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
JP7242293B2 (ja) 2018-12-27 2023-03-20 キヤノントッキ株式会社 成膜装置、成膜方法、および電子デバイスの製造方法
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Also Published As

Publication number Publication date
KR20200127061A (ko) 2020-11-09
EP2622627A1 (en) 2013-08-07
KR20130100325A (ko) 2013-09-10
TW201213578A (en) 2012-04-01
JP5907971B2 (ja) 2016-04-26
TWI561653B (en) 2016-12-11
CN104658847A (zh) 2015-05-27
EP2622627B1 (en) 2018-09-05
WO2012041557A1 (en) 2012-04-05
CN102934197A (zh) 2013-02-13
TW201525170A (zh) 2015-07-01
JP2015172240A (ja) 2015-10-01
US20130284590A1 (en) 2013-10-31
KR20180102229A (ko) 2018-09-14
JP6258883B2 (ja) 2018-01-10
EP2437280A1 (en) 2012-04-04
KR20150030769A (ko) 2015-03-20
US20120080309A1 (en) 2012-04-05
JP2013544958A (ja) 2013-12-19
KR20200018739A (ko) 2020-02-19
TWI565818B (zh) 2017-01-11
KR20180112124A (ko) 2018-10-11

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