TWI565818B - 形成濺射材料層的系統與方法 - Google Patents
形成濺射材料層的系統與方法 Download PDFInfo
- Publication number
- TWI565818B TWI565818B TW104107768A TW104107768A TWI565818B TW I565818 B TWI565818 B TW I565818B TW 104107768 A TW104107768 A TW 104107768A TW 104107768 A TW104107768 A TW 104107768A TW I565818 B TWI565818 B TW I565818B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- target
- coating
- rotatable
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- Prior art date
Links
- 239000000463 material Substances 0.000 title claims description 92
- 238000000034 method Methods 0.000 title claims description 85
- 239000000758 substrate Substances 0.000 claims description 290
- 238000000576 coating method Methods 0.000 claims description 104
- 239000011248 coating agent Substances 0.000 claims description 102
- 238000004544 sputter deposition Methods 0.000 claims description 74
- 230000015572 biosynthetic process Effects 0.000 claims description 25
- 238000012546 transfer Methods 0.000 claims description 14
- 239000010408 film Substances 0.000 description 44
- 230000008569 process Effects 0.000 description 37
- 238000009826 distribution Methods 0.000 description 34
- 238000000151 deposition Methods 0.000 description 32
- 230000008021 deposition Effects 0.000 description 32
- 230000008859 change Effects 0.000 description 21
- 238000000429 assembly Methods 0.000 description 17
- 230000000712 assembly Effects 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000006073 displacement reaction Methods 0.000 description 12
- 230000000295 complement effect Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000003574 free electron Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000001360 synchronised effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3473—Composition uniformity or desired gradient
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP10184028A EP2437280A1 (en) | 2010-09-30 | 2010-09-30 | Systems and methods for forming a layer of sputtered material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201525170A TW201525170A (zh) | 2015-07-01 |
| TWI565818B true TWI565818B (zh) | 2017-01-11 |
Family
ID=43221918
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104107768A TWI565818B (zh) | 2010-09-30 | 2011-07-29 | 形成濺射材料層的系統與方法 |
| TW100127091A TWI561653B (en) | 2010-09-30 | 2011-07-29 | Systems and methods for forming a layer of sputtered material |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100127091A TWI561653B (en) | 2010-09-30 | 2011-07-29 | Systems and methods for forming a layer of sputtered material |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20120080309A1 (enExample) |
| EP (2) | EP2437280A1 (enExample) |
| JP (2) | JP5907971B2 (enExample) |
| KR (6) | KR20200127061A (enExample) |
| CN (2) | CN104658847A (enExample) |
| TW (2) | TWI565818B (enExample) |
| WO (1) | WO2012041557A1 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120044050A (ko) * | 2010-10-27 | 2012-05-07 | 주식회사 에이스테크놀로지 | Ｒｆ 장비 도금 방법 및 이에 사용되는 스퍼터링 장치 |
| CN103132032A (zh) * | 2013-03-15 | 2013-06-05 | 上海和辉光电有限公司 | 一种用于减少ito溅射损伤衬底的溅射设备及其方法 |
| CN103681975B (zh) * | 2013-12-27 | 2017-01-25 | 柳州百韧特先进材料有限公司 | 一种制备cigs太阳能电池的方法 |
| US9988707B2 (en) | 2014-05-30 | 2018-06-05 | Ppg Industries Ohio, Inc. | Transparent conducting indium doped tin oxide |
| BE1022358B1 (nl) | 2014-07-09 | 2016-03-24 | Soleras Advanced Coatings Bvba | Sputterinrichting met bewegend doelwit |
| JP6044602B2 (ja) * | 2014-07-11 | 2016-12-14 | トヨタ自動車株式会社 | 成膜装置 |
| CN105463386B (zh) * | 2014-09-30 | 2018-10-12 | 芝浦机械电子装置株式会社 | 成膜装置及成膜基板制造方法 |
| JP6411975B2 (ja) * | 2014-09-30 | 2018-10-24 | 芝浦メカトロニクス株式会社 | 成膜装置及び成膜基板製造方法 |
| CN208791745U (zh) * | 2014-12-16 | 2019-04-26 | 应用材料公司 | 用于涂布基板的设备 |
| KR101701356B1 (ko) * | 2015-03-18 | 2017-02-01 | (주)에스엔텍 | 기재의 측면 증착이 용이한 스퍼터링 장치 및 스퍼터링 방법 |
| KR102480756B1 (ko) * | 2015-10-14 | 2022-12-23 | 삼성디스플레이 주식회사 | 스퍼터링 장치 |
| KR102446178B1 (ko) * | 2015-12-09 | 2022-09-22 | 삼성디스플레이 주식회사 | 스퍼터링 장치 |
| CN105773462B (zh) * | 2016-01-07 | 2019-03-29 | 北京师范大学 | 一种基于离子束技术提高抛光光学玻璃的金刚石砂轮棒寿命的方法及设备 |
| KR101678893B1 (ko) * | 2016-02-01 | 2016-11-23 | (주)에스엔텍 | 원통형 스퍼터링 캐소드 장치 및 이를 이용한 박막 증착 방법 |
| JP6380483B2 (ja) | 2016-08-10 | 2018-08-29 | トヨタ自動車株式会社 | 成膜装置 |
| KR102651759B1 (ko) * | 2016-10-11 | 2024-03-29 | 삼성디스플레이 주식회사 | 증착장치 |
| CN109983150B (zh) * | 2016-11-22 | 2022-04-26 | 应用材料公司 | 用于在基板上沉积层的设备和方法 |
| BE1024754B9 (nl) * | 2016-11-29 | 2018-07-24 | Soleras Advanced Coatings Bvba | Een universeel monteerbaar eindblok |
| JP7061257B2 (ja) * | 2017-03-17 | 2022-04-28 | 日新電機株式会社 | スパッタリング装置 |
| WO2019001682A1 (en) * | 2017-06-26 | 2019-01-03 | Applied Materials, Inc. | DISPLACEABLE MASKING MEMBER |
| DE102018115516A1 (de) * | 2017-06-28 | 2019-01-03 | Solayer Gmbh | Sputtervorrichtung und Sputterverfahren zur Beschichtung von dreidimensional geformten Substratoberflächen |
| DE102017116044A1 (de) * | 2017-07-17 | 2019-01-17 | RF360 Europe GmbH | Sputtervorrichtung und Verfahren zur Verwendung |
| JP7202815B2 (ja) | 2018-08-31 | 2023-01-12 | キヤノントッキ株式会社 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
| JP7202814B2 (ja) | 2018-08-31 | 2023-01-12 | キヤノントッキ株式会社 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
| JP7229016B2 (ja) | 2018-12-27 | 2023-02-27 | キヤノントッキ株式会社 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
| JP7229014B2 (ja) | 2018-12-27 | 2023-02-27 | キヤノントッキ株式会社 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
| JP7220562B2 (ja) | 2018-12-27 | 2023-02-10 | キヤノントッキ株式会社 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
| JP7229015B2 (ja) * | 2018-12-27 | 2023-02-27 | キヤノントッキ株式会社 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
| JP7242293B2 (ja) | 2018-12-27 | 2023-03-20 | キヤノントッキ株式会社 | 成膜装置、成膜方法、および電子デバイスの製造方法 |
| CN113493902A (zh) * | 2020-03-19 | 2021-10-12 | 中微半导体设备(上海)股份有限公司 | 磁控溅射镀膜装置及其工作方法 |
| CN114075650A (zh) * | 2020-08-18 | 2022-02-22 | 群创光电股份有限公司 | 曲面基板的镀膜装置及其镀膜方法 |
| CN116324014A (zh) * | 2020-10-14 | 2023-06-23 | 应用材料公司 | 溅射沉积源、沉积设备和涂覆基板的方法 |
| JP7614143B2 (ja) * | 2022-08-03 | 2025-01-15 | 株式会社アルバック | 成膜装置及び成膜方法 |
| CN115896721B (zh) * | 2022-11-11 | 2025-07-25 | 华中科技大学 | 一种用于调控高熵合金元素比例的磁控溅射方法及系统 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101070591A (zh) * | 2006-05-08 | 2007-11-14 | Lg.菲利浦Lcd株式会社 | 溅射设备及其驱动方法以及使用该设备制造基板的方法 |
| CN101285169A (zh) * | 2008-05-16 | 2008-10-15 | 昆明理工大学 | 高真空离子束溅镀靶材利用率增强装置 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4478702A (en) * | 1984-01-17 | 1984-10-23 | Ppg Industries, Inc. | Anode for magnetic sputtering apparatus |
| JPS6270568A (ja) * | 1985-09-25 | 1987-04-01 | Hitachi Ltd | スパツタ方法 |
| JPS63162862A (ja) * | 1986-12-26 | 1988-07-06 | Hitachi Ltd | スパツタ装置 |
| JPH0681145A (ja) * | 1992-08-31 | 1994-03-22 | Shimadzu Corp | マグネトロンスパッタ装置 |
| US5338422A (en) * | 1992-09-29 | 1994-08-16 | The Boc Group, Inc. | Device and method for depositing metal oxide films |
| US5616225A (en) * | 1994-03-23 | 1997-04-01 | The Boc Group, Inc. | Use of multiple anodes in a magnetron for improving the uniformity of its plasma |
| US6416635B1 (en) * | 1995-07-24 | 2002-07-09 | Tokyo Electron Limited | Method and apparatus for sputter coating with variable target to substrate spacing |
| JP2001172764A (ja) * | 1999-12-13 | 2001-06-26 | Matsushita Electric Ind Co Ltd | スパッタリング方法及びスパッタリング装置 |
| JP2001234336A (ja) * | 2000-02-18 | 2001-08-31 | Ulvac Japan Ltd | スパッタリング方法及びスパッタリング装置 |
| JP2003183823A (ja) * | 2001-12-17 | 2003-07-03 | Sharp Corp | スパッタ装置 |
| JP4437290B2 (ja) * | 2003-05-14 | 2010-03-24 | シーワイジー技術研究所株式会社 | スパッタ装置 |
| JP4246546B2 (ja) * | 2003-05-23 | 2009-04-02 | 株式会社アルバック | スパッタ源、スパッタリング装置、及びスパッタリング方法 |
| JP4246547B2 (ja) * | 2003-05-23 | 2009-04-02 | 株式会社アルバック | スパッタリング装置、及びスパッタリング方法 |
| US9771648B2 (en) * | 2004-08-13 | 2017-09-26 | Zond, Inc. | Method of ionized physical vapor deposition sputter coating high aspect-ratio structures |
| ATE459092T1 (de) * | 2004-05-05 | 2010-03-15 | Applied Materials Gmbh & Co Kg | Beschichtungsvorrichtung mit grossflächiger anordnung von drehbaren magnetronkathoden |
| JP4721878B2 (ja) * | 2005-11-22 | 2011-07-13 | キヤノンアネルバ株式会社 | スパッタリング装置 |
| DE102006036403B4 (de) * | 2006-08-02 | 2009-11-19 | Von Ardenne Anlagentechnik Gmbh | Verfahren zur Beschichtung eines Substrats mit einer definierten Schichtdickenverteilung |
| US8460522B2 (en) * | 2006-10-24 | 2013-06-11 | Ulvac, Inc. | Method of forming thin film and apparatus for forming thin film |
| CN101622374B (zh) * | 2007-03-01 | 2012-07-18 | 株式会社爱发科 | 薄膜形成方法及薄膜形成装置 |
| US20090178919A1 (en) * | 2008-01-16 | 2009-07-16 | Applied Materials, Inc. | Sputter coating device |
| EP2090673A1 (en) * | 2008-01-16 | 2009-08-19 | Applied Materials, Inc. | Sputter coating device |
| CN101503793A (zh) * | 2008-01-16 | 2009-08-12 | 应用材料公司 | 溅射涂覆装置 |
| WO2010090197A1 (ja) * | 2009-02-04 | 2010-08-12 | シャープ株式会社 | 透明導電膜形成体及びその製造方法 |
-
2010
- 2010-09-30 EP EP10184028A patent/EP2437280A1/en not_active Withdrawn
- 2010-10-07 US US12/899,752 patent/US20120080309A1/en not_active Abandoned
-
2011
- 2011-07-22 US US13/876,826 patent/US20130284590A1/en not_active Abandoned
- 2011-07-22 JP JP2013530638A patent/JP5907971B2/ja active Active
- 2011-07-22 KR KR1020207031663A patent/KR20200127061A/ko not_active Ceased
- 2011-07-22 WO PCT/EP2011/062674 patent/WO2012041557A1/en not_active Ceased
- 2011-07-22 CN CN201510091977.3A patent/CN104658847A/zh active Pending
- 2011-07-22 KR KR20157003837A patent/KR20150030769A/ko not_active Ceased
- 2011-07-22 KR KR1020187028718A patent/KR20180112124A/ko not_active Ceased
- 2011-07-22 KR KR1020187026060A patent/KR20180102229A/ko not_active Ceased
- 2011-07-22 EP EP11740620.7A patent/EP2622627B1/en active Active
- 2011-07-22 CN CN201180027703.8A patent/CN102934197B/zh active Active
- 2011-07-22 KR KR1020137011057A patent/KR20130100325A/ko not_active Ceased
- 2011-07-22 KR KR1020207004337A patent/KR20200018739A/ko not_active Ceased
- 2011-07-29 TW TW104107768A patent/TWI565818B/zh active
- 2011-07-29 TW TW100127091A patent/TWI561653B/zh active
-
2015
- 2015-02-23 JP JP2015032571A patent/JP6258883B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101070591A (zh) * | 2006-05-08 | 2007-11-14 | Lg.菲利浦Lcd株式会社 | 溅射设备及其驱动方法以及使用该设备制造基板的方法 |
| CN101285169A (zh) * | 2008-05-16 | 2008-10-15 | 昆明理工大学 | 高真空离子束溅镀靶材利用率增强装置 |
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| KR20200127061A (ko) | 2020-11-09 |
| EP2622627A1 (en) | 2013-08-07 |
| KR20130100325A (ko) | 2013-09-10 |
| TW201213578A (en) | 2012-04-01 |
| JP5907971B2 (ja) | 2016-04-26 |
| TWI561653B (en) | 2016-12-11 |
| CN104658847A (zh) | 2015-05-27 |
| EP2622627B1 (en) | 2018-09-05 |
| WO2012041557A1 (en) | 2012-04-05 |
| CN102934197A (zh) | 2013-02-13 |
| TW201525170A (zh) | 2015-07-01 |
| JP2015172240A (ja) | 2015-10-01 |
| US20130284590A1 (en) | 2013-10-31 |
| KR20180102229A (ko) | 2018-09-14 |
| JP6258883B2 (ja) | 2018-01-10 |
| EP2437280A1 (en) | 2012-04-04 |
| KR20150030769A (ko) | 2015-03-20 |
| US20120080309A1 (en) | 2012-04-05 |
| JP2013544958A (ja) | 2013-12-19 |
| KR20200018739A (ko) | 2020-02-19 |
| KR20180112124A (ko) | 2018-10-11 |
| CN102934197B (zh) | 2016-05-04 |
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