JP6044602B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
- Publication number
- JP6044602B2 JP6044602B2 JP2014143532A JP2014143532A JP6044602B2 JP 6044602 B2 JP6044602 B2 JP 6044602B2 JP 2014143532 A JP2014143532 A JP 2014143532A JP 2014143532 A JP2014143532 A JP 2014143532A JP 6044602 B2 JP6044602 B2 JP 6044602B2
- Authority
- JP
- Japan
- Prior art keywords
- evaporation source
- auxiliary electrode
- forming apparatus
- film forming
- internal space
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
Description
Claims (7)
- 処理物を収容する内部空間を有する筒状の蒸発源と、前記内部空間を密閉する閉塞部材とを備え、アーク放電によって前記蒸発源から放出されたイオンを前記処理物の表面に堆積させて成膜する成膜装置であって、
前記内部空間の電子が流入することのできる接地又は正の電圧がかけられた補助電極が、前記蒸発源の内壁面に沿って備えられていることを特徴とする成膜装置。 - 前記蒸発源は、カソードであり、前記閉塞部材及び前記補助電極は、内部冷却構造を有するアノードであることを特徴とする請求項1に記載の成膜装置。
- 前記補助電極は、前記内部空間にプロセスガスを供給するガス流路を備えることを特徴とする請求項1又は2に記載の成膜装置。
- 前記補助電極は、前記蒸発源のアークスポットの近傍に前記ガス流路のガス排出口を有し、前記アークスポットの周辺に前記プロセスガスを供給することを特徴とする請求項3に記載の成膜装置。
- 前記蒸発源の材料は、チタン又はチタン合金であり、
前記プロセスガスは、アセチレンを含むことを特徴とする請求項4に記載の成膜装置。 - 前記蒸発源と前記補助電極との間に、両者間の放電を防止するシールド部材が配置されていることを特徴とする請求項1から請求項5のいずれか一項に記載の成膜装置。
- 前記シールド部材は、前記蒸発源及び前記補助電極に対して絶縁されていることを特徴とする請求項6に記載の成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014143532A JP6044602B2 (ja) | 2014-07-11 | 2014-07-11 | 成膜装置 |
CN201510394188.7A CN105316628B (zh) | 2014-07-11 | 2015-07-07 | 成膜装置 |
US14/793,041 US9966234B2 (en) | 2014-07-11 | 2015-07-07 | Film forming device |
DE102015111102.0A DE102015111102A1 (de) | 2014-07-11 | 2015-07-09 | Filmausbildungsvorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014143532A JP6044602B2 (ja) | 2014-07-11 | 2014-07-11 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016020518A JP2016020518A (ja) | 2016-02-04 |
JP6044602B2 true JP6044602B2 (ja) | 2016-12-14 |
Family
ID=54867099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014143532A Active JP6044602B2 (ja) | 2014-07-11 | 2014-07-11 | 成膜装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9966234B2 (ja) |
JP (1) | JP6044602B2 (ja) |
CN (1) | CN105316628B (ja) |
DE (1) | DE102015111102A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6350603B2 (ja) * | 2016-07-07 | 2018-07-04 | トヨタ自動車株式会社 | アーク放電発生装置及び成膜方法 |
JP6380483B2 (ja) | 2016-08-10 | 2018-08-29 | トヨタ自動車株式会社 | 成膜装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19827461A1 (de) * | 1998-06-19 | 1999-12-23 | Leybold Systems Gmbh | Vorrichtung zum Beschichten von Substraten in einer Vakuumkammer |
US6916399B1 (en) * | 1999-06-03 | 2005-07-12 | Applied Materials Inc | Temperature controlled window with a fluid supply system |
DE10018143C5 (de) | 2000-04-12 | 2012-09-06 | Oerlikon Trading Ag, Trübbach | DLC-Schichtsystem sowie Verfahren und Vorrichtung zur Herstellung eines derartigen Schichtsystems |
JP3822778B2 (ja) | 2000-06-13 | 2006-09-20 | 日本真空光学株式会社 | 高周波イオンプレーティング装置 |
JP4693002B2 (ja) | 2005-10-17 | 2011-06-01 | 株式会社神戸製鋼所 | アークイオンプレーティング装置 |
US20070240982A1 (en) | 2005-10-17 | 2007-10-18 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Arc ion plating apparatus |
US20080006523A1 (en) * | 2006-06-26 | 2008-01-10 | Akihiro Hosokawa | Cooled pvd shield |
CN101363114B (zh) * | 2007-12-12 | 2010-06-09 | 中国科学院金属研究所 | 一种磁场增强电弧离子镀沉积工艺 |
CN101476107B (zh) * | 2008-01-02 | 2013-12-11 | 王殿儒 | 无弧斑的真空电弧离子镀膜方法 |
CN201762438U (zh) * | 2010-08-04 | 2011-03-16 | 中国科学院金属研究所 | 电弧离子镀膜装置 |
EP2437280A1 (en) * | 2010-09-30 | 2012-04-04 | Applied Materials, Inc. | Systems and methods for forming a layer of sputtered material |
JP5668637B2 (ja) * | 2011-08-10 | 2015-02-12 | トヨタ自動車株式会社 | 成膜装置及び成膜方法 |
CN103132014A (zh) * | 2011-12-01 | 2013-06-05 | 深圳富泰宏精密工业有限公司 | 镀膜件及其制备方法 |
US9640359B2 (en) * | 2012-08-09 | 2017-05-02 | Vactronix Scientific, Inc. | Inverted cylindrical magnetron (ICM) system and methods of use |
CN203174194U (zh) * | 2012-11-12 | 2013-09-04 | 广东世创金属科技有限公司 | 一种多功能等离子体增强涂层系统 |
JP2015040313A (ja) * | 2013-08-20 | 2015-03-02 | トヨタ自動車株式会社 | 成膜装置 |
-
2014
- 2014-07-11 JP JP2014143532A patent/JP6044602B2/ja active Active
-
2015
- 2015-07-07 US US14/793,041 patent/US9966234B2/en active Active
- 2015-07-07 CN CN201510394188.7A patent/CN105316628B/zh active Active
- 2015-07-09 DE DE102015111102.0A patent/DE102015111102A1/de not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
US20160013027A1 (en) | 2016-01-14 |
US9966234B2 (en) | 2018-05-08 |
JP2016020518A (ja) | 2016-02-04 |
DE102015111102A1 (de) | 2016-01-14 |
CN105316628A (zh) | 2016-02-10 |
CN105316628B (zh) | 2018-02-02 |
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