KR20130059281A - 미세 공간내에 기능 부분을 형성하는 방법 - Google Patents

미세 공간내에 기능 부분을 형성하는 방법 Download PDF

Info

Publication number
KR20130059281A
KR20130059281A KR1020120133271A KR20120133271A KR20130059281A KR 20130059281 A KR20130059281 A KR 20130059281A KR 1020120133271 A KR1020120133271 A KR 1020120133271A KR 20120133271 A KR20120133271 A KR 20120133271A KR 20130059281 A KR20130059281 A KR 20130059281A
Authority
KR
South Korea
Prior art keywords
fine powder
microcavity
functional
dispersion medium
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020120133271A
Other languages
English (en)
Korean (ko)
Inventor
시게노부 세키네
유리나 세키네
Original Assignee
유겐가이샤 나프라
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 유겐가이샤 나프라 filed Critical 유겐가이샤 나프라
Publication of KR20130059281A publication Critical patent/KR20130059281A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/1017—Multiple heating or additional steps
    • B22F3/1021—Removal of binder or filler
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0038—Manufacturing processes for forming specific nanostructures not provided for in groups B82B3/0014 - B82B3/0033
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/22—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces for producing castings from a slip
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C70/00—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts
    • B29C70/02—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts comprising combinations of reinforcements, e.g. non-specified reinforcements, fibrous reinforcing inserts and fillers, e.g. particulate fillers, incorporated in matrix material, forming one or more layers and with or without non-reinforced or non-filled layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/12—Other methods of shaping glass by liquid-phase reaction processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0215—Metallic fillers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0302—Properties and characteristics in general
    • H05K2201/0305—Solder used for other purposes than connections between PCB or components, e.g. for filling vias or for programmable patterns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0425—Solder powder or solder coated metal powder

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Nanotechnology (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
KR1020120133271A 2011-11-28 2012-11-22 미세 공간내에 기능 부분을 형성하는 방법 Withdrawn KR20130059281A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011259001A JP5687175B2 (ja) 2011-11-28 2011-11-28 微細空間内に機能部分を形成する方法
JPJP-P-2011-259001 2011-11-28

Publications (1)

Publication Number Publication Date
KR20130059281A true KR20130059281A (ko) 2013-06-05

Family

ID=47227726

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020120133271A Withdrawn KR20130059281A (ko) 2011-11-28 2012-11-22 미세 공간내에 기능 부분을 형성하는 방법

Country Status (6)

Country Link
US (2) US20130136645A1 (enExample)
EP (1) EP2596884A1 (enExample)
JP (1) JP5687175B2 (enExample)
KR (1) KR20130059281A (enExample)
CN (1) CN103137438A (enExample)
TW (1) TW201331995A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170305743A1 (en) * 2011-11-28 2017-10-26 Napra Co., Ltd. Method for forming functional part in minute space

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6134884B2 (ja) * 2013-07-19 2017-05-31 株式会社ザイキューブ 電極、電極材料及び電極形成方法
JP5885351B2 (ja) * 2013-10-09 2016-03-15 有限会社 ナプラ 接合部及び電気配線
JP6347104B2 (ja) * 2013-12-27 2018-06-27 セイコーエプソン株式会社 電気配線層の製造方法、電気配線層形成用部材、電気配線層、電気配線基板の製造方法、電気配線基板形成用部材、電気配線基板、振動子、電子機器および移動体
JP6022492B2 (ja) * 2014-02-13 2016-11-09 有限会社 ナプラ 微細空間内に導体を形成する製造方法
US9305866B2 (en) 2014-02-25 2016-04-05 International Business Machines Corporation Intermetallic compound filled vias
JP5822977B2 (ja) * 2014-04-18 2015-11-25 有限会社 ナプラ 電子デバイス、その製造方法、金属粒子及び導電性ペースト
KR20170118047A (ko) * 2015-02-19 2017-10-24 스미토모 세이미츠 고교 가부시키가이샤 충전 방법 및 충전 장치
JP5859162B1 (ja) * 2015-08-06 2016-02-10 住友精密工業株式会社 金属充填装置および金属充填方法
US10363608B2 (en) * 2015-09-07 2019-07-30 Hitachi Chemical Company, Ltd. Copper paste for joining, method for producing joined body, and method for producing semiconductor device
US9515044B1 (en) 2015-10-14 2016-12-06 Napra Co., Ltd. Electronic device, method of manufacturing the same, metal particle, and electroconductive paste
US20180138110A1 (en) * 2016-11-17 2018-05-17 Texas Instruments Incorporated Enhanced Adhesion by Nanoparticle Layer Having Randomly Configured Voids
US9865527B1 (en) 2016-12-22 2018-01-09 Texas Instruments Incorporated Packaged semiconductor device having nanoparticle adhesion layer patterned into zones of electrical conductance and insulation
US9941194B1 (en) 2017-02-21 2018-04-10 Texas Instruments Incorporated Packaged semiconductor device having patterned conductance dual-material nanoparticle adhesion layer
EP3720647B1 (en) * 2017-12-07 2024-09-11 Ormet Circuits, Inc. Metallurgical compositions with thermally stable microstructures for assembly in electronic packaging
CN108598056A (zh) * 2018-06-29 2018-09-28 北京梦之墨科技有限公司 一种应用tsv技术的电子器件及其制作方法
CN113510241A (zh) * 2021-04-25 2021-10-19 福建尚辉润德新材料科技有限公司 一种磁粉注射成型粘结剂、制备方法及应用方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3864715A (en) * 1972-12-22 1975-02-04 Du Pont Diode array-forming electrical element
US4613369A (en) * 1984-06-27 1986-09-23 Pall Corporation Porous metal article and method of making
JP2685112B2 (ja) * 1992-06-24 1997-12-03 大同特殊鋼 株式会社 粉末成形品の製造法
US5953629A (en) * 1995-06-09 1999-09-14 Vacuum Metallurgical Co., Ltd. Method of thin film forming on semiconductor substrate
US5770136A (en) * 1995-08-07 1998-06-23 Huang; Xiaodi Method for consolidating powdered materials to near net shape and full density
US6235624B1 (en) * 1998-06-01 2001-05-22 Kabushiki Kaisha Toshiba Paste connection plug, burying method, and semiconductor device manufacturing method
US5985208A (en) * 1998-08-27 1999-11-16 Alliedsignal Inc. Process for debinding and sintering metal injection molded parts made with an aqueous binder
JP2001237140A (ja) * 1999-12-13 2001-08-31 Murata Mfg Co Ltd 積層型セラミック電子部品およびその製造方法ならびにセラミックペーストおよびその製造方法
JP2003305588A (ja) * 2002-04-11 2003-10-28 Fujitsu Ltd 接合材料
TWI325739B (en) * 2003-01-23 2010-06-01 Panasonic Corp Electroconductive paste, its manufacturing method, circuit board using the same electroconductive paste, and its manufacturing method
JP2006131952A (ja) * 2004-11-05 2006-05-25 Hitachi Powdered Metals Co Ltd Ｆｅ−Ｔｉ焼結合金の製造方法
US7425507B2 (en) * 2005-06-28 2008-09-16 Micron Technology, Inc. Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures
JP4278007B1 (ja) * 2008-11-26 2009-06-10 有限会社ナプラ 微細空間への金属充填方法
EP2259307B1 (en) * 2009-06-02 2019-07-03 Napra Co., Ltd. Electronic device
JP4563506B1 (ja) * 2010-01-13 2010-10-13 有限会社ナプラ 電極材料
JP4505540B1 (ja) 2009-06-02 2010-07-21 有限会社ナプラ 金属充填装置
JP5250582B2 (ja) * 2010-04-22 2013-07-31 有限会社 ナプラ 充填用基材及びそれを用いた充填方法
US8609532B2 (en) * 2010-05-26 2013-12-17 Intel Corporation Magnetically sintered conductive via
JP4790089B2 (ja) * 2011-01-24 2011-10-12 有限会社ナプラ 導電性組成物及び電子デバイスの製造方法
JP5687175B2 (ja) * 2011-11-28 2015-03-18 有限会社 ナプラ 微細空間内に機能部分を形成する方法
FI125558B (en) * 2013-05-29 2015-11-30 Iprotoxi Oy Device for controlling sensors
SG11201601075PA (en) * 2013-08-28 2016-03-30 3M Innovative Properties Co Electronic assembly with fiducial marks for precision registration during subsequent processing steps
JP6022492B2 (ja) * 2014-02-13 2016-11-09 有限会社 ナプラ 微細空間内に導体を形成する製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170305743A1 (en) * 2011-11-28 2017-10-26 Napra Co., Ltd. Method for forming functional part in minute space
US9950925B2 (en) * 2011-11-28 2018-04-24 Napra Co., Ltd. Method for forming functional part in minute space

Also Published As

Publication number Publication date
US20170305743A1 (en) 2017-10-26
TW201331995A (zh) 2013-08-01
CN103137438A (zh) 2013-06-05
US9950925B2 (en) 2018-04-24
JP5687175B2 (ja) 2015-03-18
EP2596884A1 (en) 2013-05-29
JP2013115177A (ja) 2013-06-10
US20130136645A1 (en) 2013-05-30

Similar Documents

Publication Publication Date Title
KR20130059281A (ko) 미세 공간내에 기능 부분을 형성하는 방법
TWI627638B (zh) 銀微粒子燒結體、半導體裝置、銀微粒子燒結體的製造方法及半導體裝置的製造方法
JP5225479B2 (ja) 半導体基板、電子デバイス及びその製造方法
DE102009044863B4 (de) Halbleiter-Bauelement und Verfahren zum Herstellen eines Halbleiter-Bauelements
DE102016101887B4 (de) Verfahren zum Herstellen eines Package mit Befestigung eines Chipbefestigungsmediums an einem bereits gekapselten elektronischen Chip
JP6022492B2 (ja) 微細空間内に導体を形成する製造方法
DE102021104671B4 (de) Verbundwerkstoff mit Füllstoffpartikeln mit morphologischer Haftvermittlerhülle auf einem Kern
KR101466513B1 (ko) 절연성 페이스트, 전자 디바이스 및 절연부 형성 방법
WO2013061183A1 (de) Elektrisch isolierendes harz - gehäuse für halbleiterbauelemente oder baugruppen und herstellungsverfahren mit einem moldprozess
EP1744353A1 (de) Chip-Trägersubstrat aus Silizium mit durchgehenden Kontakten und Herstellungsverfahren dafür
JP5450780B1 (ja) 微細空間内に導体を形成する方法
US9666499B2 (en) Semiconductor device with encapsulant
HK1183374A (en) Method for forming functional part in minute space
DE102015100868B4 (de) Integrierte Schaltung und Verfahren zum Herstellen einer integrierten Schaltung
JP3371874B2 (ja) パワーモジュール
WO2022212492A2 (en) Assemblies used for embedding integrated circuit assemblies, and their uses and method of fabrication thereof
JP6808882B1 (ja) 半導体基板に設けられた微細空間内に導体を形成する方法
JP2019079965A (ja) 柱状導体構造
JPH08242048A (ja) 高密度回路配線基板、その製造方法及び高密度回路配線基板を用いたマルチチップモジュール
JP2021118339A (ja) 半導体装置と半導体装置の製造方法
CN113196471A (zh) 电子部件及其制造方法
JPH09172235A (ja) 配線基板及びその製造方法
HK1183375A (en) Semiconductor substrate, eletronic device and method for manufacturing the same
DE202011003706U1 (de) Oberflächenmontierbaren Leistungsgehäusen für Halbleiterchips und deren Anordnung zur Wärmeableitung

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20121122

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid