JP5225479B2 - 半導体基板、電子デバイス及びその製造方法 - Google Patents
半導体基板、電子デバイス及びその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 106
- 238000004519 manufacturing process Methods 0.000 title claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 215
- 239000000377 silicon dioxide Substances 0.000 claims description 100
- 239000004020 conductor Substances 0.000 claims description 81
- 238000000034 method Methods 0.000 claims description 65
- 239000010419 fine particle Substances 0.000 claims description 58
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 35
- 239000007788 liquid Substances 0.000 claims description 34
- 239000002245 particle Substances 0.000 claims description 25
- 150000001875 compounds Chemical class 0.000 claims description 24
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- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 9
- 229910007991 Si-N Inorganic materials 0.000 claims description 4
- 229910006294 Si—N Inorganic materials 0.000 claims description 4
- 229920000592 inorganic polymer Polymers 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- -1 Next Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 142
- 239000013078 crystal Substances 0.000 description 59
- 239000002114 nanocomposite Substances 0.000 description 39
- 229910052710 silicon Inorganic materials 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
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- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
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- 150000004819 silanols Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 238000000354 decomposition reaction Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
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- 230000002040 relaxant effect Effects 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
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Description
(a)半導体基板に対する密着強度の高い絶縁層を有する高信頼度の半導体基板、電子デバイス及びその製造方法を提供することができる。
(b)クラック等の欠陥のない高信頼度の半導体基板、電子デバイス及びその製造方法を提供することができる。
(c)十分に厚い絶縁膜を有し、信号伝送特性の改善及び消費電力の低減に寄与し得る絶縁構造を有する半導体基板、電子デバイス及びその製造方法を提供することができる。
(d)絶縁層に発生する応力を緩和し、半導体回路素子形成の面積効率を向上させた半導体基板、電子デバイス及びその製造方法を提供することができる。
(e)コストの安価な絶縁構造を有する半導体基板、電子デバイス及びその製造方法を提供することができる。
(a)本発明に係る絶縁層3は、半導体基板1に対して密着するから、特許文献2に記載された技術と異なって、トレンチの上部をリフロー性誘電体層によって閉じる必要がない。
(b)本発明に係る絶縁層3では、nmサイズのシリカ微粒子311の周りを、結晶またはアモルファスのシリカ320によって、隙間なく埋めるのであるから、無機SOG又は有機SOGを用いて、網目構造の絶縁層を形成する特許文献2の技術と異なる。この構造上の違いから、本発明に係る絶縁層3は、特許文献2に記載された技術と対比して、電気絶縁性に優れ、しかも半導体基板に対して高い密着強度を有することとなる。特許文献2では、網目構造によって、応力緩和を図っているのに対して、本発明では、ナノコンポジット構造によって応力緩和を図っている点でも、異なる。
(c)本発明に係る絶縁層3は、特許文献2と異なって、炭素を含まない。この構造上の違いから、本発明に係る絶縁層3は、高絶縁抵抗の絶縁層となる。
(d)本発明に係る絶縁層3は、微粒子としては、シリカ微粒子311を含むだけであるから、第1絶縁粒子及び第2絶縁粒子を含む特許文献2に記載された技術と異なる。その構造の違いから、本発明に係る絶縁層3は、特許文献2の絶縁層よりも高い密着強度を呈する。
(a)非共晶組織の内部に共晶組織でなるナノ粒子を分散させたもの、
(b)非共晶組織の粒界に共晶組織でなるナノ粒子を分散させたもの、
(c)共晶組織の粒界に非共晶組織でなるナノ粒子を分散させたもの、
(d)非共晶組織の内部に共晶組織でなるナノ粒子を分散させるとともに、非共晶組織の粒界に共晶組織でなるナノ粒子を分散させたもの、
(e)共晶組織及び非共晶組織が、共にナノサイズであるもの
などが含まれる。
2 縦導体
20 孔
3 絶縁層
30 孔または溝
311 シリカ微粒子
320 シリカ微粒子間を埋めるシリカ
Claims (7)
- 導体及び絶縁層を有する半導体基板を製造する方法であって、絶縁層形成工程と導体形成工程を含み、
絶縁層形成工程は、
前記半導体基板に、孔または溝を形成し、
前記孔または溝内に、揮発性有機溶媒中に粒径がnmサイズのシリカ微粒子を分散させた懸濁液を流し込み、
次に、前記揮発性有機溶媒を蒸発させて前記シリカ微粒子の間に隙間を生じさせ、
次に、前記孔または溝内に、液体シリカ又は液体Si化合物を流し込んで前記シリカ微粒子の間の前記隙間に浸透させ、
更に、熱処理によって、浸透させた前記液体シリカ又は前記液体Si化合物を、シリカへの転化を促進し、
前記熱処理工程は、前記孔または溝内の内容物を加圧しながら加熱し、その後、加圧しながら冷却する工程を含み、
導体形成工程は、
前記絶縁層によって囲まれた領域内に、孔または溝を形成し、
前記孔または溝内に金属成分又は合金成分を含む導体を形成する、
工程を含む製造方法。 - 請求項1に記載された方法であって、
前記シリカに転化させる工程は、前記シリカ微粒子の表面に残留する前記揮発性有機溶媒の水酸基を利用する。 - 請求項1又は2に記載された方法であって、前記液体Si化合物は、Si−N結合を持つ。
- 請求項3に記載された方法であって、前記液体Si化合物は、Si−N結合を基本ユニットとする無機ポリマーを含む。
- 請求項4に記載された方法であって、前記無機ポリマーは、ペルヒドロポリシラザン(PHPS)である。
- 請求項1乃至5の何れかに記載された方法であって、前記孔または溝内に、前記懸濁液を注入する工程は、真空チャンバ内において、減圧下で行われる。
- 請求項1乃至6の何れかに記載された方法であって、前記孔または溝内に液体シリカ又は液体Si化合物を流し込む工程は、真空チャンバ内において、減圧下で行われる。
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JP2012028669A JP5225479B2 (ja) | 2011-09-27 | 2012-02-13 | 半導体基板、電子デバイス及びその製造方法 |
US13/587,322 US9230860B2 (en) | 2011-09-27 | 2012-08-16 | Semiconductor substrate, electronic device and method for manufacturing the same |
KR1020120097074A KR101811067B1 (ko) | 2011-09-27 | 2012-09-03 | 반도체 기판 제조방법 |
TW105139469A TWI620298B (zh) | 2011-09-27 | 2012-09-25 | 半導體基板及電子裝置 |
TW101135073A TWI567914B (zh) | 2011-09-27 | 2012-09-25 | 半導體基板製造方法 |
CN201210374598.1A CN103021964B (zh) | 2011-09-27 | 2012-09-27 | 半导体基板、电子器件及其制造方法 |
US14/826,603 US9460965B2 (en) | 2011-09-27 | 2015-08-14 | Semiconductor substrate, eletronic device and method for manufacturing the same |
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EP2835822A1 (en) | 2013-08-08 | 2015-02-11 | Napra Co., Ltd. | Wiring substrate and manufacturing method therefor |
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CN104297971A (zh) * | 2013-07-15 | 2015-01-21 | 睿志达光电(深圳)有限公司 | 显示面板的基板处理方法 |
JP5575309B1 (ja) * | 2013-08-05 | 2014-08-20 | 有限会社 ナプラ | 集積回路装置 |
US9305866B2 (en) | 2014-02-25 | 2016-04-05 | International Business Machines Corporation | Intermetallic compound filled vias |
JP5934752B2 (ja) * | 2014-07-01 | 2016-06-15 | 有限会社 ナプラ | 集積回路装置 |
US9443799B2 (en) * | 2014-12-16 | 2016-09-13 | International Business Machines Corporation | Interposer with lattice construction and embedded conductive metal structures |
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JP6728252B2 (ja) * | 2017-02-28 | 2020-07-22 | 株式会社東芝 | 半導体装置及びその製造方法 |
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Cited By (2)
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EP2835822A1 (en) | 2013-08-08 | 2015-02-11 | Napra Co., Ltd. | Wiring substrate and manufacturing method therefor |
US9076786B2 (en) | 2013-08-08 | 2015-07-07 | Napra Co., Ltd. | Wiring substrate and manufacturing method therefor |
Also Published As
Publication number | Publication date |
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TW201320283A (zh) | 2013-05-16 |
KR20130033955A (ko) | 2013-04-04 |
CN103021964A (zh) | 2013-04-03 |
KR101811067B1 (ko) | 2017-12-20 |
TWI620298B (zh) | 2018-04-01 |
US20130075930A1 (en) | 2013-03-28 |
US20150357273A1 (en) | 2015-12-10 |
US9230860B2 (en) | 2016-01-05 |
CN103021964B (zh) | 2017-04-12 |
JP2013084877A (ja) | 2013-05-09 |
TWI567914B (zh) | 2017-01-21 |
TW201717348A (zh) | 2017-05-16 |
US9460965B2 (en) | 2016-10-04 |
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