CN103137438A - 在微细空间内形成功能部分的方法 - Google Patents

在微细空间内形成功能部分的方法 Download PDF

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Publication number
CN103137438A
CN103137438A CN2012104951011A CN201210495101A CN103137438A CN 103137438 A CN103137438 A CN 103137438A CN 2012104951011 A CN2012104951011 A CN 2012104951011A CN 201210495101 A CN201210495101 A CN 201210495101A CN 103137438 A CN103137438 A CN 103137438A
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CN
China
Prior art keywords
functional
micro mist
fine powder
melting
fine space
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Pending
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CN2012104951011A
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English (en)
Chinese (zh)
Inventor
关根重信
关根由莉奈
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NAPULA CORP
Napra Co Ltd
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NAPULA CORP
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Publication of CN103137438A publication Critical patent/CN103137438A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/1017—Multiple heating or additional steps
    • B22F3/1021—Removal of binder or filler
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0038—Manufacturing processes for forming specific nanostructures not provided for in groups B82B3/0014 - B82B3/0033
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/22—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces for producing castings from a slip
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C70/00—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts
    • B29C70/02—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts comprising combinations of reinforcements, e.g. non-specified reinforcements, fibrous reinforcing inserts and fillers, e.g. particulate fillers, incorporated in matrix material, forming one or more layers and with or without non-reinforced or non-filled layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C99/00—Subject matter not provided for in other groups of this subclass
    • B81C99/0075—Manufacture of substrate-free structures
    • B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/12—Other methods of shaping glass by liquid-phase reaction processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/146—Mixed devices
    • H01L2924/1461—MEMS
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
    • H05K2201/0203—Fillers and particles
    • H05K2201/0206—Materials
    • H05K2201/0215—Metallic fillers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0302—Properties and characteristics in general
    • H05K2201/0305—Solder used for other purposes than connections between PCB or components, e.g. for filling vias or for programmable patterns
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/04—Soldering or other types of metallurgic bonding
    • H05K2203/0425—Solder powder or solder coated metal powder

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Powder Metallurgy (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
CN2012104951011A 2011-11-28 2012-11-28 在微细空间内形成功能部分的方法 Pending CN103137438A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011259001A JP5687175B2 (ja) 2011-11-28 2011-11-28 微細空間内に機能部分を形成する方法
JP2011-259001 2011-11-28

Publications (1)

Publication Number Publication Date
CN103137438A true CN103137438A (zh) 2013-06-05

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CN2012104951011A Pending CN103137438A (zh) 2011-11-28 2012-11-28 在微细空间内形成功能部分的方法

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US (2) US20130136645A1 (enExample)
EP (1) EP2596884A1 (enExample)
JP (1) JP5687175B2 (enExample)
KR (1) KR20130059281A (enExample)
CN (1) CN103137438A (enExample)
TW (1) TW201331995A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598056A (zh) * 2018-06-29 2018-09-28 北京梦之墨科技有限公司 一种应用tsv技术的电子器件及其制作方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5687175B2 (ja) * 2011-11-28 2015-03-18 有限会社 ナプラ 微細空間内に機能部分を形成する方法
JP6134884B2 (ja) * 2013-07-19 2017-05-31 株式会社ザイキューブ 電極、電極材料及び電極形成方法
JP5885351B2 (ja) * 2013-10-09 2016-03-15 有限会社 ナプラ 接合部及び電気配線
JP6347104B2 (ja) * 2013-12-27 2018-06-27 セイコーエプソン株式会社 電気配線層の製造方法、電気配線層形成用部材、電気配線層、電気配線基板の製造方法、電気配線基板形成用部材、電気配線基板、振動子、電子機器および移動体
JP6022492B2 (ja) * 2014-02-13 2016-11-09 有限会社 ナプラ 微細空間内に導体を形成する製造方法
US9305866B2 (en) 2014-02-25 2016-04-05 International Business Machines Corporation Intermetallic compound filled vias
JP5822977B2 (ja) * 2014-04-18 2015-11-25 有限会社 ナプラ 電子デバイス、その製造方法、金属粒子及び導電性ペースト
DE112016000838T5 (de) * 2015-02-19 2017-12-07 Sumitomo Precision Products Co., Ltd. Füllverfahren und Füllvorrichtung
JP5859162B1 (ja) * 2015-08-06 2016-02-10 住友精密工業株式会社 金属充填装置および金属充填方法
EP3702071A1 (en) * 2015-09-07 2020-09-02 Hitachi Chemical Company, Ltd. Copper paste for joining, method for producing joined body, and method for producing semiconductor device
US9515044B1 (en) 2015-10-14 2016-12-06 Napra Co., Ltd. Electronic device, method of manufacturing the same, metal particle, and electroconductive paste
US20180138110A1 (en) * 2016-11-17 2018-05-17 Texas Instruments Incorporated Enhanced Adhesion by Nanoparticle Layer Having Randomly Configured Voids
US9865527B1 (en) 2016-12-22 2018-01-09 Texas Instruments Incorporated Packaged semiconductor device having nanoparticle adhesion layer patterned into zones of electrical conductance and insulation
US9941194B1 (en) 2017-02-21 2018-04-10 Texas Instruments Incorporated Packaged semiconductor device having patterned conductance dual-material nanoparticle adhesion layer
KR102747812B1 (ko) * 2017-12-07 2024-12-30 오르멧 서키츠 인코퍼레이티드 전자 패키징에서의 조립을 위한 열안정성 미세구조를 갖는 야금 조성물
CN113510241A (zh) * 2021-04-25 2021-10-19 福建尚辉润德新材料科技有限公司 一种磁粉注射成型粘结剂、制备方法及应用方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953629A (en) * 1995-06-09 1999-09-14 Vacuum Metallurgical Co., Ltd. Method of thin film forming on semiconductor substrate
CN1325331A (zh) * 1998-08-27 2001-12-05 联合讯号公司 对用水性粘结剂制造的金属注塑零件进行脱粘结剂和烧结的方法
US20060292877A1 (en) * 2005-06-28 2006-12-28 Lake Rickie C Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3864715A (en) * 1972-12-22 1975-02-04 Du Pont Diode array-forming electrical element
US4613369A (en) * 1984-06-27 1986-09-23 Pall Corporation Porous metal article and method of making
JP2685112B2 (ja) * 1992-06-24 1997-12-03 大同特殊鋼 株式会社 粉末成形品の製造法
US5770136A (en) * 1995-08-07 1998-06-23 Huang; Xiaodi Method for consolidating powdered materials to near net shape and full density
US6235624B1 (en) * 1998-06-01 2001-05-22 Kabushiki Kaisha Toshiba Paste connection plug, burying method, and semiconductor device manufacturing method
JP2001237140A (ja) * 1999-12-13 2001-08-31 Murata Mfg Co Ltd 積層型セラミック電子部品およびその製造方法ならびにセラミックペーストおよびその製造方法
JP2003305588A (ja) * 2002-04-11 2003-10-28 Fujitsu Ltd 接合材料
TWI325739B (en) * 2003-01-23 2010-06-01 Panasonic Corp Electroconductive paste, its manufacturing method, circuit board using the same electroconductive paste, and its manufacturing method
JP2006131952A (ja) * 2004-11-05 2006-05-25 Hitachi Powdered Metals Co Ltd Ｆｅ−Ｔｉ焼結合金の製造方法
JP4278007B1 (ja) * 2008-11-26 2009-06-10 有限会社ナプラ 微細空間への金属充填方法
US8415784B2 (en) * 2009-06-02 2013-04-09 Napra Co., Ltd. Electronic device, conductive composition, metal filling apparatus, and electronic device manufacturing method
JP4563506B1 (ja) * 2010-01-13 2010-10-13 有限会社ナプラ 電極材料
JP4505540B1 (ja) * 2009-06-02 2010-07-21 有限会社ナプラ 金属充填装置
JP5250582B2 (ja) * 2010-04-22 2013-07-31 有限会社 ナプラ 充填用基材及びそれを用いた充填方法
US8609532B2 (en) * 2010-05-26 2013-12-17 Intel Corporation Magnetically sintered conductive via
JP4790089B2 (ja) * 2011-01-24 2011-10-12 有限会社ナプラ 導電性組成物及び電子デバイスの製造方法
JP5687175B2 (ja) * 2011-11-28 2015-03-18 有限会社 ナプラ 微細空間内に機能部分を形成する方法
FI125558B (en) * 2013-05-29 2015-11-30 Iprotoxi Oy Device for controlling sensors
US9807871B2 (en) * 2013-08-28 2017-10-31 3M Innovative Properties Company Electronic assembly with fiducial marks for precision registration during subsequent processing steps
JP6022492B2 (ja) * 2014-02-13 2016-11-09 有限会社 ナプラ 微細空間内に導体を形成する製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953629A (en) * 1995-06-09 1999-09-14 Vacuum Metallurgical Co., Ltd. Method of thin film forming on semiconductor substrate
CN1325331A (zh) * 1998-08-27 2001-12-05 联合讯号公司 对用水性粘结剂制造的金属注塑零件进行脱粘结剂和烧结的方法
US20060292877A1 (en) * 2005-06-28 2006-12-28 Lake Rickie C Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108598056A (zh) * 2018-06-29 2018-09-28 北京梦之墨科技有限公司 一种应用tsv技术的电子器件及其制作方法

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JP5687175B2 (ja) 2015-03-18
KR20130059281A (ko) 2013-06-05
JP2013115177A (ja) 2013-06-10
US20170305743A1 (en) 2017-10-26
TW201331995A (zh) 2013-08-01
EP2596884A1 (en) 2013-05-29
US9950925B2 (en) 2018-04-24
US20130136645A1 (en) 2013-05-30

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