TW201331995A - 於微細空間內形成功能部分之方法 - Google Patents
於微細空間內形成功能部分之方法 Download PDFInfo
- Publication number
- TW201331995A TW201331995A TW101143595A TW101143595A TW201331995A TW 201331995 A TW201331995 A TW 201331995A TW 101143595 A TW101143595 A TW 101143595A TW 101143595 A TW101143595 A TW 101143595A TW 201331995 A TW201331995 A TW 201331995A
- Authority
- TW
- Taiwan
- Prior art keywords
- functional
- fine
- fine powder
- space
- dispersion medium
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 54
- 239000000843 powder Substances 0.000 claims abstract description 94
- 239000007788 liquid Substances 0.000 claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 50
- 239000002612 dispersion medium Substances 0.000 claims abstract description 48
- 239000006185 dispersion Substances 0.000 claims abstract description 32
- 238000010438 heat treatment Methods 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 78
- 239000002184 metal Substances 0.000 claims description 78
- 238000002844 melting Methods 0.000 claims description 22
- 230000008018 melting Effects 0.000 claims description 22
- 239000000919 ceramic Substances 0.000 claims description 19
- 239000010419 fine particle Substances 0.000 claims description 17
- 239000011230 binding agent Substances 0.000 claims description 9
- 235000019353 potassium silicate Nutrition 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052902 vermiculite Inorganic materials 0.000 description 10
- 235000019354 vermiculite Nutrition 0.000 description 10
- 239000010455 vermiculite Substances 0.000 description 10
- 229910001128 Sn alloy Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000012768 molten material Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- SDGKUVSVPIIUCF-UHFFFAOYSA-N 2,6-dimethylpiperidine Chemical compound CC1CCCC(C)N1 SDGKUVSVPIIUCF-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000008204 material by function Substances 0.000 description 2
- 238000010309 melting process Methods 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- 239000002114 nanocomposite Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000001293 FEMA 3089 Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- LGCMKPRGGJRYGM-UHFFFAOYSA-N Osalmid Chemical compound C1=CC(O)=CC=C1NC(=O)C1=CC=CC=C1O LGCMKPRGGJRYGM-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229920000592 inorganic polymer Polymers 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011859 microparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0009—Forming specific nanostructures
- B82B3/0038—Manufacturing processes for forming specific nanostructures not provided for in groups B82B3/0014 - B82B3/0033
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1017—Multiple heating or additional steps
- B22F3/1021—Removal of binder or filler
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/22—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces for producing castings from a slip
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C70/00—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts
- B29C70/02—Shaping composites, i.e. plastics material comprising reinforcements, fillers or preformed parts, e.g. inserts comprising combinations of reinforcements, e.g. non-specified reinforcements, fibrous reinforcing inserts and fillers, e.g. particulate fillers, incorporated in matrix material, forming one or more layers and with or without non-reinforced or non-filled layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0075—Manufacture of substrate-free structures
- B81C99/0085—Manufacture of substrate-free structures using moulds and master templates, e.g. for hot-embossing
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/12—Other methods of shaping glass by liquid-phase reaction processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4867—Applying pastes or inks, e.g. screen printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/146—Mixed devices
- H01L2924/1461—MEMS
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0215—Metallic fillers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0305—Solder used for other purposes than connections between PCB or components, e.g. for filling vias or for programmable patterns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/04—Soldering or other types of metallurgic bonding
- H05K2203/0425—Solder powder or solder coated metal powder
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Powder Metallurgy (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
[課題]提供使用低溫分散系功能性材料,於微細空間內形成不具空隙、間隙、或空洞之功能部分的方法。[解決手段]於微細空間3內填充使具有熱熔解性的功能性微粉末52分散在液狀分散媒51中的分散系功能性材料5。接著,使微細空間3內的液狀分散媒51蒸發。接著,藉由熱處理而使功能性微粉末52熱熔解後,一面加壓一面冷卻。
Description
本發明係有關於微細空間內形成功能部分之方法。
例如,在以半導體裝置所代表的電子裝置或微型機器等中,有時必須在內部形成具有高縱橫比的微細導體填充構造、絕緣構造或功能構造。在如此之情形,已知藉由將預先所選擇的填充材填充在微細孔內,而實現導體填充構造、絕緣構造及功能構造等的技術。但是,在具有高縱橫比的微細孔內,不使空隙或硬化後變形等發生,而將填充材充分填充至其底部係極為困難。
作為可克服如此之技術上之困難度的先前技術,已知有日本專利第4278007號公報及日本專利第4505540號公報所記載的填充方法及裝置。
日本專利第4278007號公報所記載之技術,係一種在存在於晶圓的微細孔填充熔融金屬,且使其硬化的方法,其包含:對於前述微細孔內的前述熔融金屬,以保持施加超過大氣壓的強制外力,而冷卻前述熔融金屬使其硬化的步驟。前述強制外力,係以選自衝壓壓、射出壓或轉壓的至少1種供應,在封閉前述微細孔的另一端側的狀態下,從前述微細孔開口之開口面側施加於前述熔融金屬。日本專利第4505540號公報,係揭示一種用於實施日本專利第4278007號公報所記載之方法的裝置。
若是藉由上述日本專利第4278007號公報、日本專利第4505540號公報所記載之技術,可獲得優異的作用效果為:能夠不產生空隙或孔洞等而以填充物填滿微細孔;能夠避免在微細間隙所冷卻之硬化金屬的凹面化;及有助於步驟簡化、良率的提升等。
本發明之課題,係提供使用低溫分散系功能性材料,於微細空間內形成不具空隙、間隙、或空洞的功能部分的方法。
為達成上述課題,本發明揭示複數之屬於一個發明概念的方法。
首先,第1方法,係當在微細空間內形成功能部分時,於微細空間內填充使具有熱熔解性的功能性微粉末分散在液狀分散媒中的分散系功能性材料;接著,使前述微細空間內的前述液狀分散媒蒸發;接著,將功能性微粉末加熱,一面加壓一面使其硬化。
如上所述,在第1方法中,係使用使功能性微粉末分散於液狀分散媒中的分散系功能性材料。亦即,使用係流動性填充材的分散系功能性材料。為此,可將原本具有難以填充之微粉末形態的功能性微粉末,利用分散系功能性材料的流動性,確實地填充在微細空間內。
在微細空間內填充分散系功能性材料時,較佳為在真空腔室內的減壓氣體環境中處理。亦可採用在減壓處
理之後,將真空腔室的內壓增壓的差壓填充方式。若藉由此差壓填充,可將分散系功能性材料確實地填充在微細空間的內部。在將分散系功能性材料填充在微細空間內時,例如若對對象物或裝置供以超音波振動等,則填充作業可平順地進行。
接著,使前述微細空間內的前述液狀分散媒蒸發。在微細空間的內部,係成為只有功能性微粉末殘留。之後,藉由加熱處理殘留的功能性微粉末而使其熔解後,一面加壓一面使其硬化。藉此,在微細空間內形成有不具空隙、間隙、或空洞的功能部分。
具有熱熔解性的功能性微粉末,並非限定物,但例如為Sn合金等之低熔點金屬微粉末。
在本說明書中,功能性材料係指,以使材料所具有的電氣特性、介電質特性、磁性、光學特性等特性展現作為目的而使用之類型的材料。功能性微粉末係指,將如上所示之功能性材料微粉末化之物。分散系係指,微細的固體粒子分散在液體之分散媒中的懸浮液或糊膏,包含具備相同粒度的粒子的單分散系、粒度不齊而變化的多分散系等兩系列。此外,不僅包含粗粒的分散系,亦包含膠態的分散系。
接著,第2方法的特徵在於:使用使功能性微粉末及結合材微粉末分散在液狀分散媒中的分散系功能性材料。在第2方法中,亦可獲得在第1方法中所述之作用效果。
功能性微粉末及結合材微粉末,並非限定物,但為高熔點金屬微粉末及低熔點金屬微粉末的組合。
此外,第3方法的特徵在於:在微細空間內,使液狀分散媒蒸發後,使液狀結合材含浸在微細空間內的前述功能性微粉末的微粒子間的間隙,接著,藉由熱處理,使前述液狀結合材與前述功能性微粉末反應後,一面加壓一面使其硬化。在第3方法中,亦可獲得在第1方法中所述之作用效果。
從第1到第3方法,作為液狀分散媒,皆可使用水性分散媒或揮發性有機分散媒。
如以上所述,若藉由本發明,可提供使用低溫分散系功能性材料,於微細空間內形成不具空隙、間隙、或空洞的功能部分的方法。
第1圖係顯示第1方法的圖。此第1方法係關於在微細空間3內形成金屬部分的具體方法。首先,準備具有微細空間3的對象物1(第1圖(a))。對象物,係廣泛地包含晶圓、電路基板、層積基板、半導體晶片、MEMS(Micro-Electro-Mechanical Systems,微機電系統)等具有微細空間者。微細空間,係除了以TSV(Through Silicon Via,矽穿孔)代表的貫穿孔、非貫穿孔(盲孔)以外,還包含在被層積的基板間所產生的微細間隙等。功能性微粒子,係可採用球狀、鱗片狀、扁平狀等任意形狀。
作為使功能性微粒子分散的液狀分散媒,可使用水性分散媒或揮發性有機分散媒。尤其較佳為如在常溫下揮發之揮發性有機分散媒。作為如上所示之液狀分散媒,由於已知多種,只要選擇使用該等即可。
被設在對象物1的微細空間3,在此實施例中為貫穿孔或非貫穿孔,具有開口部的孔徑D1、深度H1。孔徑D1係例如25μm以下,深度H1係與孔徑D1的縱橫比為1以上,較佳為5以上的值。對象物1,在例如是晶圓時,上述微細空間3,係被多數設置在晶圓面內。
在上述對象物1的微細空間3,填充(灌入)使低熔點金屬微粉末分散在液狀分散媒中的分散系功能性材料5(第1圖(b))。此時的分散系功能性材料5,係為使作為具有熱熔解性的功能性微粉末之低熔點金屬微粉末52,分散在分散媒51的分散系。低熔點金屬微粉末52的代表例為Sn合金微粉末。Sn合金微粉末,較佳為以屬於nm尺寸(為1μm以下)的奈米微粒子或具有奈米複合物結構的微粒子所構成。亦可以Sn合金微粉末為基質,而包含其他金屬微粉末,例如Bi、Ga或In的微粉末的至少一種。微粒子係可採用球狀、鱗片狀、扁平狀等任意形狀。在填充步驟中,較佳為採用前述之差壓填充。
將分散系功能性材料5填充在微細空間3內時,較佳為在真空腔室內的減壓氣體環境處理。減壓處理之後,亦可採用將真空腔室的內壓增壓的差壓填充方式。若藉由此差壓填充,可將分散系功能性材料5確實地填充在微細空間3的內部。
接著,在微細空間3的內部中,使低熔點金屬微粉末52熱熔解,並一同使液狀分散媒51蒸發(第1圖(c)、(d))。藉此,與在低熔點金屬微粉末52的微粒子之間產生間隙G1一同,該間隙G1被經熔解的低熔點金屬微粉末52填埋。若低熔點金屬微粉末52係以Sn合金微粉末為基質時,能夠以該熔點(約231℃)使其熱熔解。
更進一步,將經熱熔解的低熔點金屬微粉末52一面加壓F1一面冷卻,而使其硬化(第1圖(e))。藉此,係成為在對象物1的微細空間3的內部,形成以低熔點金屬而成之功能部分50。上述製程之中,至少第1圖(a)~(d),係較佳在真空腔室內實行。
如上所述,由於將分散系功能性材料5填充在微細空間3的內部,將原本具有不易填充之微粉末形態的低熔點金屬微粉末52,利用分散系功能性材料5的流動性,可確實地填充在微細空間3的內部。填充時,係可採用差壓填充方式。
此外,由於使用使低熔點金屬微粉末52分散在液狀分散媒51中的分散系功能性材料5,而不同於使用熔融金屬的習知技術,並不需要熔融製程。可將處於低溫狀態的分散系功能性材料5,藉由差壓填充方式等,填充在微細空間3的內部。此外,具有微細空間3的對象物1,係例如已形成有半導體電路的晶圓等之時,可將對半導體電路之熱性的不良影響抑制為最小限度。更進一步,由於不需要用於熔融的熱能量,而可減低消耗能量。
在第1方法中,將上述分散系功能性材料5填充在微細空間3的內部,接著,在微細空間3的內部,與使低熔點金屬微粉末52熱熔解一起,並使液狀分散媒51蒸發,更進一步,由於係將經熱熔解的低熔點金屬微粉末52一面加壓一面冷卻而使其硬化,而可獲得例如Sn合金等之低電阻體的功能部分50(第1圖(e))。
此外,由於將經熱熔解的低熔點金屬微粉末52一面加壓一面冷卻使其硬化,而可藉由加壓來避免因冷卻時的體積縮小有時會產生在微細空間3與成形體之間的間隙、空隙的發生,形成不具間隙或空隙之高品質的功能部分50。
更進一步,由於將經熱熔解的低熔點金屬微粉末52一面加壓一面冷卻使其硬化,而使低熔點金屬的粒成長、結晶成長受到抑制。此結果,抑制柱狀結晶成長,低熔點金屬被等軸晶化,應力降低,而可避免在具有微細空間3的對象物1發生微裂縫等之不良情形。
接著,第2圖係顯示第2方法。在圖中,關於與第1圖出現之構成部分相對應的部分,標註有相同的元件符號。圖示於第2圖之第2方法的特徵係在於,兼用高熔點及低熔點金屬微粉末,作為功能性材料及結合材,在微細空間3內形成以高熔點金屬及低熔點金屬而成之金屬部分。於第2方法中,在微細空間3的內部形成金屬部分之時,與第1方法的情形同樣地,係准備具有微細空間3的對象物1(第2圖(a))。而如第2圖所示,將使低熔點金屬微粉末52及高熔點金屬微粉末53分散在
液狀分散媒51中的分散系功能性材料5,藉由前述差壓填充法,填充在微細空間3的內部(第2圖(b))。低熔點金屬微粉末52及高熔點金屬微粉末53,粒徑不齊或統一皆可。
接著,在微細空間3的內部中,與使低熔點金屬微粉末52熱熔解一起,並使液狀分散媒51蒸發(第2圖(c)),更進一步,將高熔點金屬微粉末53及低熔點金屬微粉末52的熔解物一面加壓一面冷卻使其硬化。在上述步驟中,藉由低熔點金屬微粉末52的熔解物,填埋高熔點金屬微粒子53-53間的間隙G1,與高熔點金屬粒子53擴散接合。上述製程之中,至少第2圖(a)~(c),係在真空腔室內執行。
作為低熔點金屬微粉末52,可使用上述Sn合金基質的微粉末。如前所述,亦可將Sn合金微粉末作為基質,而含有其他金屬微粉末,例如Bi微粉末、Ga微粉末、In微粉末。高熔點金屬微粉末53,具體而言,亦可藉由包含至少1種選自Ag、Cu、Au、Pt、Ti、Zn、Al、Fe、Si或Ni的群組的材料而構成。此等之高熔點金屬微粉末53,係較佳為以屬於nm尺寸(1μm以下)的奈米微粒子或具有奈米複合物結構的微粒子所構成。低熔點金屬微粉末52及高熔點金屬微粉末53,係粒徑不齊,或統一皆可。此外,可採用球狀、鱗片狀、扁平狀等任意形狀。
在第2方法中,亦可使原本具有不易填充之微粉末形態的低熔點金屬微粉末52及高熔點金屬微粉末53,
利用作為分散系功能性材料5的流動性,而確實地填充在微細空間3內。
此外,由於使用使低熔點金屬微粉末52及高熔點金屬微粉末53分散在液狀分散媒51中的分散系功能性材料5,而不同於使用熔融金屬的習知技術,並不需要熔融製程。可將處於低溫狀態的分散系功能性材料5,利用其流動性,藉由供應選自氣體壓、衝壓壓、射出壓、或轉壓之至少1種加壓力的手段,而輕易地填充在微細空間3的內部。此外,具有微細空間3的對象物1,係已形成有半導體電路等的晶圓等之時,可將對於半導體電路之熱性的不良影響抑制為最小限度。更進一步,由於不需要用於熔融的熱能量,而可減低消耗能量。
此外,將分散系功能性材料5填充在微細空間3的內部,接著,在微細空間3的內部,與使低熔點金屬微粉末52熱熔解一起,並使液狀分散媒51蒸發,更進一步,將高熔點金屬微粉末53及低熔點金屬微粉末52的熔解物一面加壓F1一面冷卻而使其硬化。藉由上述之製程,可獲得以高熔點金屬及低熔點金屬而成之功能部分50(第2圖(e))。在成型之時,可利用藉由低熔點金屬微粉末52之熔解及凝固的結合力,並不另外需要結合材。因此,可使高熔點金屬微粉末53及低熔點金屬微粉末52所具有的特性照原樣發揮。
此外,由於將高熔點金屬微粉末53及低熔點金屬微粉末52的熔解物一面加壓F1一面冷卻,而可藉由加壓F1來避免因冷卻時的體積縮小有時會產生在微細空間3
與成形體之間之間隙、空隙的發生,形成不具間隙或空隙之高品質的功能部分50。
此外,由於將經熱熔解的低熔點金屬微粉末52一面加壓一面冷卻且成型,而使低熔點金屬及高熔點金屬的粒成長、結晶成長受到抑制。此結果,低熔點金屬及高熔點金屬被等軸晶化,應力降低,而可避免在具有微細空間3的對象物1發生微裂縫等之不良情形。
若藉由第2方法,係藉由低熔點金屬微粉末52的熔解物,填埋高熔點金屬微粉末53的高熔點金屬微粒子間之間隙,使其與前述高熔點金屬粒子擴散接合。因此,低熔點金屬及高熔點金屬係成為以彼此一體化的狀態構成成型體,而發揮對應兩金屬之特性的功能。
第3圖係圖示第3方法。在圖中,關於與第1圖出現之構成部分相對應的部分,係標註有相同的元件符號。第3方法,係關於在微細空間3內形成電絕緣部分的具體方法。若參照第3圖,當在微細空間3的內部形成電絕緣部分之時,在微細空間3的內部填充使絕緣性陶瓷微粉末54分散在液狀分散媒51中的分散系功能性材料5(第3圖(a)、(b)),接著,在微細空間3的內部中,使分散系功能性材料5所含之液狀分散媒51蒸發(第3圖(c)),接著,使液狀結合材55含浸在微細空間3的內部的絕緣性陶瓷微粉末54之微粒子間的間隙G1(第3圖(d))。而藉由加熱,使液狀結合材55與絕緣性陶瓷微粉末54化學性反應等,一面加壓陶瓷微粉末54及液狀結合材55而使其硬化(第3圖(e))。
在第3方法中,亦使用使具有不易填充的微粉末形態的絕緣性陶瓷微粉末54分散在液狀分散媒51中的分散系功能性材料5,可利用其流動性,而輕易地填充在微細空間3的內部。
此外,係藉由使被填充在微細空間3的內部的液狀分散媒51蒸發,接著,使液狀結合材55含浸在位於微細空間3的內部的絕緣性陶瓷微粉末54之微粒子間的間隙,最終使絕緣性陶瓷微粉末54及液狀結合材55一面加壓一面硬化的製程,而成為可獲得以絕緣性陶瓷及結合材所成之具有電絕緣性的功能部分50。
再者,由於將絕緣性陶瓷微粉末54及液狀結合材55一面加壓一面硬化,而可藉由加壓來避免有時會產生在微細空間3與作為成形體的功能部分50之間的間隙、空隙的發生,形成不具間隙或空隙之高品質的功能部分50。
液狀結合材55,係可為液體玻璃,亦可為有機樹脂。作為有機樹脂,熱硬化型樹脂係適宜。絕緣性陶瓷微粉末54,並非限定物,但可含有SiO2、Al2O3等金屬氧化物或SiN等氮化物的至少一種。
作為液狀分散媒51,係如上所述,可使用水性分散媒或揮發性有機分散媒。作為揮發性有機分散媒的代表例,係有具有羥基(OH)的醇類。接著,敘述有關使用如此之揮發性有機分散媒51時的具體例。
使用具有羥基(OH)的醇類作為揮發性有機分散媒51時,在真空腔室內的減壓氣體環境,由於其大部分會
蒸發,而在絕緣性陶瓷微粉末54的微粒子間之間隙會產生間隙G1。此外,揮發性有機分散媒51所含有的OH基係與陶瓷微粒子,例如藉由SiO2的結合力,而附著在絕緣性陶瓷微粉末54的表面。亦可在使分散媒51蒸發後,加壓絕緣性陶瓷微粉末54的集合體。
使用具有羥基(OH)的醇類作為揮發性有機分散媒時,作為液狀結合材55,可使用液體矽石或液體Si化合物。以液體矽石或液體Si化合物所成之液狀結合材55,係浸透至絕緣性陶瓷微粉末54的微粒子間的間隙G1。此時,亦接著在真空腔室內的減壓氣體環境中處理。亦可在減壓處理後,將真空腔室的內壓增壓(差壓填充方式)。藉由此差壓填充,可使液狀結合材55充分浸透於陶瓷微粒子的周圍。
使用液體矽石之情形,其有機溶媒會蒸發而發生矽石轉化。使用液體Si化合物之情形,使Si化合物與附著在絕緣性陶瓷微粉末54之表面的OH基反應,而轉化成矽石。
作為液體Si化合物之例,係有矽氮烷、矽氧烷、矽烷醇等。在此舉使用矽氮烷之無機聚合物的聚矽氮烷(PHPS)時為例說明。聚矽氮烷係與水分或氧起反應而轉化成矽石。作為有機溶媒,係使用二甲苯、松脂油或高沸點芳香族系溶媒等。
在絕緣性陶瓷微粉末54的表面殘留OH基,藉由使聚矽氮烷與此OH基反應,使其轉化成矽石。如此所得的矽石通常係成為非晶質。
為促進矽石轉化,較佳為在加熱步驟中,使用衝壓板等一面加壓,一面加熱。加熱溫度,係依聚矽氮烷的種類而異,但是一般而言,係在室溫~450℃的範圍選擇。在該加熱處理步驟中,有機溶媒的分解氣體會被排出。
上述步驟之後,為了矽石轉化之更加促進、及使分解氣體排出,較佳例如以1000℃前後燒成。
微細空間並不侷限於貫穿孔或非貫穿孔。在層積多數基板的層積電子裝置,係採取將電絕緣物填充於在基板間所發生之微小間隙(微細空間)的底塗構造。本發明亦可適用於如此之底塗形成。
以上參照較佳實施例,具體說明了本發明之內容,但是根據本發明之基本的技術思想及教示,若為該領域熟習該項技術者,可思及各種變形樣式及未被說明的其他適用技術領域,自不殆言。
1‧‧‧對象物
3‧‧‧微細空間
5‧‧‧分散系功能性材料
50‧‧‧功能部分
51‧‧‧分散媒
52、53‧‧‧功能性微粉末
D1‧‧‧孔徑
F1‧‧‧加壓
G1‧‧‧間隙
H1‧‧‧深度
第1圖(a)~(e)係顯示有關本發明之第1方法的區塊圖。
第2圖(a)~(e)係顯示有關本發明之第2方法的區塊圖。
第3圖(a)~(e)係顯示有關本發明之第3方法的區塊圖。
1‧‧‧對象物
3‧‧‧微細空間
5‧‧‧分散系功能性材料
50‧‧‧功能部分
51‧‧‧分散媒
52‧‧‧功能性微粉末
D1‧‧‧孔徑
F1‧‧‧加壓
G1‧‧‧間隙
H1‧‧‧深度
Claims (7)
- 一種於微細空間內形成功能部分之方法,其包含以下步驟:於微細空間內填充使具有熱熔解性的功能性微粉末分散在液狀分散媒中的分散系功能性材料;接著,使該微細空間內的該液狀分散媒蒸發;接著,將功能性微粉末加熱,一面加壓一面使其硬化。
- 如申請專利範圍第1項之方法,其中該功能性微粉末,係低熔點金屬微粉末。
- 一種於微細空間內形成功能部分之方法,其包含以下步驟:於微細空間內填充使功能性微粉末及結合材微粉末分散在液狀分散媒中的分散系功能性材料;接著,使該微細空間內的該液狀分散媒蒸發,接著,將功能性微粉末加熱,一面加壓一面使其硬化。
- 如申請專利範圍第3項之方法,其中該功能性微粉末及該結合材微粉末,係高熔點金屬微粉末及低熔點金屬微粉末。
- 一種於微細空間內形成功能部分之方法,其包含以下步驟:於微細空間內填充使功能性微粉末分散在液狀分散媒中的分散系功能性材料;接著,在該微細空間內,使該液狀分散媒蒸發; 接著,使液狀結合材含浸在該微細空間內的該功能性微粉末之微粒子間的間隙;接著,藉由熱處理,使該液狀結合材與該功能性微粉末反應後,一面加壓一面使其硬化。
- 如申請專利範圍第5項之方法,係該功能性微粉末為陶瓷微粉末,該液狀結合材為液體玻璃之方法。
- 如申請專利範圍第1至6項中任一項之方法,其中該液狀分散媒,係水性分散媒或揮發性有機分散媒。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011259001A JP5687175B2 (ja) | 2011-11-28 | 2011-11-28 | 微細空間内に機能部分を形成する方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201331995A true TW201331995A (zh) | 2013-08-01 |
Family
ID=47227726
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101143595A TW201331995A (zh) | 2011-11-28 | 2012-11-22 | 於微細空間內形成功能部分之方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20130136645A1 (zh) |
EP (1) | EP2596884A1 (zh) |
JP (1) | JP5687175B2 (zh) |
KR (1) | KR20130059281A (zh) |
CN (1) | CN103137438A (zh) |
TW (1) | TW201331995A (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5687175B2 (ja) * | 2011-11-28 | 2015-03-18 | 有限会社 ナプラ | 微細空間内に機能部分を形成する方法 |
JP6134884B2 (ja) * | 2013-07-19 | 2017-05-31 | 株式会社ザイキューブ | 電極、電極材料及び電極形成方法 |
JP5885351B2 (ja) * | 2013-10-09 | 2016-03-15 | 有限会社 ナプラ | 接合部及び電気配線 |
JP6347104B2 (ja) * | 2013-12-27 | 2018-06-27 | セイコーエプソン株式会社 | 電気配線層の製造方法、電気配線層形成用部材、電気配線層、電気配線基板の製造方法、電気配線基板形成用部材、電気配線基板、振動子、電子機器および移動体 |
JP6022492B2 (ja) * | 2014-02-13 | 2016-11-09 | 有限会社 ナプラ | 微細空間内に導体を形成する製造方法 |
US9305866B2 (en) | 2014-02-25 | 2016-04-05 | International Business Machines Corporation | Intermetallic compound filled vias |
JP5822977B2 (ja) * | 2014-04-18 | 2015-11-25 | 有限会社 ナプラ | 電子デバイス、その製造方法、金属粒子及び導電性ペースト |
JPWO2016132830A1 (ja) * | 2015-02-19 | 2017-12-07 | 住友精密工業株式会社 | 充填方法および充填装置 |
JP5859162B1 (ja) * | 2015-08-06 | 2016-02-10 | 住友精密工業株式会社 | 金属充填装置および金属充填方法 |
CN107949447B (zh) * | 2015-09-07 | 2020-03-03 | 日立化成株式会社 | 接合用铜糊料、接合体的制造方法及半导体装置的制造方法 |
US9515044B1 (en) | 2015-10-14 | 2016-12-06 | Napra Co., Ltd. | Electronic device, method of manufacturing the same, metal particle, and electroconductive paste |
US20180138110A1 (en) * | 2016-11-17 | 2018-05-17 | Texas Instruments Incorporated | Enhanced Adhesion by Nanoparticle Layer Having Randomly Configured Voids |
US9865527B1 (en) | 2016-12-22 | 2018-01-09 | Texas Instruments Incorporated | Packaged semiconductor device having nanoparticle adhesion layer patterned into zones of electrical conductance and insulation |
US9941194B1 (en) | 2017-02-21 | 2018-04-10 | Texas Instruments Incorporated | Packaged semiconductor device having patterned conductance dual-material nanoparticle adhesion layer |
CN108598056A (zh) * | 2018-06-29 | 2018-09-28 | 北京梦之墨科技有限公司 | 一种应用tsv技术的电子器件及其制作方法 |
CN113510241A (zh) * | 2021-04-25 | 2021-10-19 | 福建尚辉润德新材料科技有限公司 | 一种磁粉注射成型粘结剂、制备方法及应用方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3864715A (en) * | 1972-12-22 | 1975-02-04 | Du Pont | Diode array-forming electrical element |
US4613369A (en) * | 1984-06-27 | 1986-09-23 | Pall Corporation | Porous metal article and method of making |
JP2685112B2 (ja) * | 1992-06-24 | 1997-12-03 | 大同特殊鋼 株式会社 | 粉末成形品の製造法 |
US5953629A (en) * | 1995-06-09 | 1999-09-14 | Vacuum Metallurgical Co., Ltd. | Method of thin film forming on semiconductor substrate |
US5770136A (en) * | 1995-08-07 | 1998-06-23 | Huang; Xiaodi | Method for consolidating powdered materials to near net shape and full density |
US6235624B1 (en) * | 1998-06-01 | 2001-05-22 | Kabushiki Kaisha Toshiba | Paste connection plug, burying method, and semiconductor device manufacturing method |
US5985208A (en) * | 1998-08-27 | 1999-11-16 | Alliedsignal Inc. | Process for debinding and sintering metal injection molded parts made with an aqueous binder |
JP2001237140A (ja) * | 1999-12-13 | 2001-08-31 | Murata Mfg Co Ltd | 積層型セラミック電子部品およびその製造方法ならびにセラミックペーストおよびその製造方法 |
JP2003305588A (ja) * | 2002-04-11 | 2003-10-28 | Fujitsu Ltd | 接合材料 |
TWI325739B (en) * | 2003-01-23 | 2010-06-01 | Panasonic Corp | Electroconductive paste, its manufacturing method, circuit board using the same electroconductive paste, and its manufacturing method |
JP2006131952A (ja) * | 2004-11-05 | 2006-05-25 | Hitachi Powdered Metals Co Ltd | Fe−Ti焼結合金の製造方法 |
US7425507B2 (en) * | 2005-06-28 | 2008-09-16 | Micron Technology, Inc. | Semiconductor substrates including vias of nonuniform cross section, methods of forming and associated structures |
JP4278007B1 (ja) | 2008-11-26 | 2009-06-10 | 有限会社ナプラ | 微細空間への金属充填方法 |
EP2259307B1 (en) * | 2009-06-02 | 2019-07-03 | Napra Co., Ltd. | Electronic device |
JP4563506B1 (ja) * | 2010-01-13 | 2010-10-13 | 有限会社ナプラ | 電極材料 |
JP4505540B1 (ja) | 2009-06-02 | 2010-07-21 | 有限会社ナプラ | 金属充填装置 |
JP5250582B2 (ja) * | 2010-04-22 | 2013-07-31 | 有限会社 ナプラ | 充填用基材及びそれを用いた充填方法 |
US8609532B2 (en) * | 2010-05-26 | 2013-12-17 | Intel Corporation | Magnetically sintered conductive via |
JP4790089B2 (ja) * | 2011-01-24 | 2011-10-12 | 有限会社ナプラ | 導電性組成物及び電子デバイスの製造方法 |
JP5687175B2 (ja) * | 2011-11-28 | 2015-03-18 | 有限会社 ナプラ | 微細空間内に機能部分を形成する方法 |
FI125558B (en) * | 2013-05-29 | 2015-11-30 | Iprotoxi Oy | Device for controlling sensors |
EP3039949A4 (en) * | 2013-08-28 | 2017-04-19 | 3M Innovative Properties Company | Electronic assembly with fiducial marks for precision registration during subsequent processing steps |
JP6022492B2 (ja) * | 2014-02-13 | 2016-11-09 | 有限会社 ナプラ | 微細空間内に導体を形成する製造方法 |
-
2011
- 2011-11-28 JP JP2011259001A patent/JP5687175B2/ja active Active
-
2012
- 2012-11-16 US US13/678,900 patent/US20130136645A1/en not_active Abandoned
- 2012-11-16 EP EP12275175.3A patent/EP2596884A1/en not_active Withdrawn
- 2012-11-22 KR KR1020120133271A patent/KR20130059281A/ko not_active Application Discontinuation
- 2012-11-22 TW TW101143595A patent/TW201331995A/zh unknown
- 2012-11-28 CN CN2012104951011A patent/CN103137438A/zh active Pending
-
2017
- 2017-07-06 US US15/643,417 patent/US9950925B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20130059281A (ko) | 2013-06-05 |
JP5687175B2 (ja) | 2015-03-18 |
CN103137438A (zh) | 2013-06-05 |
US20130136645A1 (en) | 2013-05-30 |
US20170305743A1 (en) | 2017-10-26 |
JP2013115177A (ja) | 2013-06-10 |
EP2596884A1 (en) | 2013-05-29 |
US9950925B2 (en) | 2018-04-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW201331995A (zh) | 於微細空間內形成功能部分之方法 | |
US10269678B1 (en) | Microelectronic components having integrated heat dissipation posts, systems including the same, and methods for the fabrication thereof | |
JP5934079B2 (ja) | ダイを基板に取付けた装置 | |
TWI627638B (zh) | 銀微粒子燒結體、半導體裝置、銀微粒子燒結體的製造方法及半導體裝置的製造方法 | |
TWI636514B (zh) | Silver paste and semiconductor device using the same, and method for producing silver paste | |
JP5225479B2 (ja) | 半導体基板、電子デバイス及びその製造方法 | |
JPWO2019026799A1 (ja) | 金属接合用組成物 | |
TW201911989A (zh) | 金屬接合積層體的製造方法 | |
JP6022492B2 (ja) | 微細空間内に導体を形成する製造方法 | |
TWI565795B (zh) | 沿厚度方向具有優越導熱性的散熱片的製造方法及所製造的散熱片 | |
CN115053339A (zh) | 导电导孔及其制造方法 | |
WO2013061183A1 (de) | Elektrisch isolierendes harz - gehäuse für halbleiterbauelemente oder baugruppen und herstellungsverfahren mit einem moldprozess | |
JP5450780B1 (ja) | 微細空間内に導体を形成する方法 | |
JP7228086B2 (ja) | 導電性ペーストを用いた導電性ピラーの製造方法 | |
JP6357271B1 (ja) | 柱状導体構造 | |
JP6808882B1 (ja) | 半導体基板に設けられた微細空間内に導体を形成する方法 | |
JP6836006B1 (ja) | 電子機器基板 | |
JP6603989B2 (ja) | 複合粒子及びその製造方法、導電性ペースト、焼結体、並びに半導体装置 | |
US20230005834A1 (en) | Electrically conductive vias and methods for producing same | |
KR101045793B1 (ko) | 코팅 방법 및 장치 | |
TW202249543A (zh) | 用於嵌入式積體電路總成之總成及其用途與製造方法 | |
DE202011003706U1 (de) | Oberflächenmontierbaren Leistungsgehäusen für Halbleiterchips und deren Anordnung zur Wärmeableitung |