KR20120066581A - 에칭제 및 이를 이용한 에칭방법 - Google Patents
에칭제 및 이를 이용한 에칭방법 Download PDFInfo
- Publication number
- KR20120066581A KR20120066581A KR1020110118604A KR20110118604A KR20120066581A KR 20120066581 A KR20120066581 A KR 20120066581A KR 1020110118604 A KR1020110118604 A KR 1020110118604A KR 20110118604 A KR20110118604 A KR 20110118604A KR 20120066581 A KR20120066581 A KR 20120066581A
- Authority
- KR
- South Korea
- Prior art keywords
- copper
- etching
- metal oxide
- etchant
- layer
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010278161A JP5219304B2 (ja) | 2010-12-14 | 2010-12-14 | エッチング剤及びこれを用いたエッチング方法 |
JPJP-P-2010-278161 | 2010-12-14 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020170004046A Division KR101823817B1 (ko) | 2010-12-14 | 2017-01-11 | 에칭제 및 이를 이용한 에칭방법 |
KR1020170062078A Division KR101811553B1 (ko) | 2010-12-14 | 2017-05-19 | 에칭제 및 이를 이용한 에칭방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120066581A true KR20120066581A (ko) | 2012-06-22 |
Family
ID=46407051
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020110118604A KR20120066581A (ko) | 2010-12-14 | 2011-11-15 | 에칭제 및 이를 이용한 에칭방법 |
KR1020170004046A KR101823817B1 (ko) | 2010-12-14 | 2017-01-11 | 에칭제 및 이를 이용한 에칭방법 |
KR1020170062078A KR101811553B1 (ko) | 2010-12-14 | 2017-05-19 | 에칭제 및 이를 이용한 에칭방법 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020170004046A KR101823817B1 (ko) | 2010-12-14 | 2017-01-11 | 에칭제 및 이를 이용한 에칭방법 |
KR1020170062078A KR101811553B1 (ko) | 2010-12-14 | 2017-05-19 | 에칭제 및 이를 이용한 에칭방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5219304B2 (zh) |
KR (3) | KR20120066581A (zh) |
CN (2) | CN103820783A (zh) |
TW (2) | TWI553155B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9466508B2 (en) | 2013-04-23 | 2016-10-11 | Mitsubishi Gas Chemical Company, Inc. | Liquid composition used in etching multilayer film containing copper and molybdenum, manufacturing method of substrate using said liquid composition, and substrate manufactured by said manufacturing method |
EP2862959A1 (en) * | 2013-10-21 | 2015-04-22 | ATOTECH Deutschland GmbH | Method of selectively treating copper in the presence of further metal |
CN103695908A (zh) * | 2013-12-27 | 2014-04-02 | 东莞市广华化工有限公司 | 一种新型的有机碱微蚀液 |
JP6417612B2 (ja) * | 2014-12-01 | 2018-11-07 | メック株式会社 | エッチング剤およびその補給液、マグネシウム部品の表面粗化方法、ならびにマグネシウム−樹脂複合体の製造方法 |
JP6662671B2 (ja) * | 2016-03-24 | 2020-03-11 | 株式会社Adeka | エッチング液組成物及びエッチング方法 |
JP6736088B2 (ja) * | 2017-05-22 | 2020-08-05 | メック株式会社 | エッチング液、補給液および銅配線の形成方法 |
KR102206587B1 (ko) | 2020-06-10 | 2021-01-21 | 심교권 | 유연성 기판의 배선 형성 방법. |
JP7274221B2 (ja) | 2020-11-11 | 2023-05-16 | メック株式会社 | エッチング剤及び回路基板の製造方法 |
CN113667978A (zh) * | 2021-08-24 | 2021-11-19 | 青岛爱大生环保科技有限公司 | 一种中性铜蚀刻液及其制备方法 |
TW202408335A (zh) * | 2022-08-04 | 2024-02-16 | 日商三菱瓦斯化學股份有限公司 | 印刷配線板之製造方法 |
CN116240547B (zh) * | 2022-12-25 | 2024-03-12 | 湖北兴福电子材料股份有限公司 | 一种铜蚀刻液及其制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1096937A (ja) | 1996-09-24 | 1998-04-14 | Canon Inc | 液晶素子及びその製造方法 |
JP4063475B2 (ja) * | 1999-11-10 | 2008-03-19 | メック株式会社 | 銅または銅合金のエッチング剤 |
JP4706081B2 (ja) | 2001-06-05 | 2011-06-22 | メック株式会社 | 銅または銅合金のエッチング剤ならびにエッチング法 |
JP4521460B2 (ja) * | 2008-02-20 | 2010-08-11 | メック株式会社 | エッチング液及びこれを用いた銅配線の形成方法 |
CN102985596B (zh) * | 2010-06-18 | 2016-08-10 | 三菱瓦斯化学株式会社 | 用于包含铜层和钼层的多层结构膜的蚀刻液 |
-
2010
- 2010-12-14 JP JP2010278161A patent/JP5219304B2/ja active Active
-
2011
- 2011-11-15 KR KR1020110118604A patent/KR20120066581A/ko active Application Filing
- 2011-12-07 TW TW100145018A patent/TWI553155B/zh active
- 2011-12-07 TW TW105103496A patent/TWI604090B/zh active
- 2011-12-09 CN CN201410058148.0A patent/CN103820783A/zh active Pending
- 2011-12-09 CN CN201110409498.3A patent/CN102560497B/zh active Active
-
2017
- 2017-01-11 KR KR1020170004046A patent/KR101823817B1/ko active IP Right Grant
- 2017-05-19 KR KR1020170062078A patent/KR101811553B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP5219304B2 (ja) | 2013-06-26 |
CN103820783A (zh) | 2014-05-28 |
CN102560497B (zh) | 2014-10-15 |
KR20170059931A (ko) | 2017-05-31 |
KR20170010026A (ko) | 2017-01-25 |
KR101823817B1 (ko) | 2018-01-30 |
TWI553155B (zh) | 2016-10-11 |
TWI604090B (zh) | 2017-11-01 |
TW201617481A (zh) | 2016-05-16 |
KR101811553B1 (ko) | 2017-12-21 |
CN102560497A (zh) | 2012-07-11 |
JP2012129304A (ja) | 2012-07-05 |
TW201224208A (en) | 2012-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101811553B1 (ko) | 에칭제 및 이를 이용한 에칭방법 | |
TW591120B (en) | Etchant for copper or copper alloys | |
JP5920972B2 (ja) | 配線形成方法およびエッチング液 | |
JP2011058062A (ja) | 触媒付与溶液並びにこれを用いた無電解めっき方法及びダイレクトプレーティング方法 | |
JP2009149971A (ja) | エッチング剤 | |
KR20170006776A (ko) | 은 또는 은합금 함유 금속막 식각액 조성물 | |
JPWO2009091012A1 (ja) | 銅または銅合金用のエッチング液、エッチング前処理液およびエッチング方法 | |
JP6062418B2 (ja) | エッチング液組成物及びエッチング方法 | |
CN103695908A (zh) | 一种新型的有机碱微蚀液 | |
JP2013104104A (ja) | エッチング液、補給液及び銅配線の形成方法 | |
JP2009191357A (ja) | エッチング液 | |
EP2878706A1 (en) | Microetching agent for copper, supplementary liquid for same, and manufacturing method for circuit board | |
JP2008106354A (ja) | 金属除去液及びこれを用いた金属除去方法 | |
WO2011147448A1 (en) | Composition and method for micro etching of copper and copper alloys | |
KR20180072688A (ko) | 식각액 조성물 및 식각 방법 | |
JP2011233769A (ja) | 銅配線パターンの形成方法 | |
JP2015007271A (ja) | 配線形成方法、及びこれに用いるエッチング液 | |
JP5382892B2 (ja) | エッチング方法 | |
JP7377212B2 (ja) | エッチング液組成物及びエッチング方法 | |
JP4395148B2 (ja) | レジスト剥離剤 | |
JP2005133147A (ja) | 銅および銅合金の表面処理剤 | |
WO2022102272A1 (ja) | エッチング剤及び回路基板の製造方法 | |
CN116145142A (zh) | 一种面板行业用金属碱性蚀刻液及其制备方法 | |
JP2004285417A (ja) | スズホイスカ防止剤、及びこれを用いたホイスカ防止性スズメッキ物の製造方法 | |
WO2019122055A1 (en) | A method and treatment composition for selective removal of palladium |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
AMND | Amendment | ||
E601 | Decision to refuse application | ||
AMND | Amendment | ||
A107 | Divisional application of patent |