KR20110137725A - 마이크로 렌즈의 제조에 이용되는 마스크, 및, 그것을 이용한 마이크로 렌즈의 제조 방법 - Google Patents

마이크로 렌즈의 제조에 이용되는 마스크, 및, 그것을 이용한 마이크로 렌즈의 제조 방법 Download PDF

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Publication number
KR20110137725A
KR20110137725A KR1020110050807A KR20110050807A KR20110137725A KR 20110137725 A KR20110137725 A KR 20110137725A KR 1020110050807 A KR1020110050807 A KR 1020110050807A KR 20110050807 A KR20110050807 A KR 20110050807A KR 20110137725 A KR20110137725 A KR 20110137725A
Authority
KR
South Korea
Prior art keywords
microlens
mask
layout
light ray
micro lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020110050807A
Other languages
English (en)
Korean (ko)
Inventor
사치코 오가와
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 르네사스 일렉트로닉스 가부시키가이샤 filed Critical 르네사스 일렉트로닉스 가부시키가이샤
Publication of KR20110137725A publication Critical patent/KR20110137725A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
    • B29D11/00—Producing optical elements, e.g. lenses or prisms
    • B29D11/00009—Production of simple or compound lenses
    • B29D11/00365—Production of microlenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Ophthalmology & Optometry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Light Receiving Elements (AREA)
KR1020110050807A 2010-06-17 2011-05-27 마이크로 렌즈의 제조에 이용되는 마스크, 및, 그것을 이용한 마이크로 렌즈의 제조 방법 Ceased KR20110137725A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-138314 2010-06-17
JP2010138314A JP5565771B2 (ja) 2010-06-17 2010-06-17 マイクロレンズの製造方法および撮像素子

Publications (1)

Publication Number Publication Date
KR20110137725A true KR20110137725A (ko) 2011-12-23

Family

ID=45328441

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110050807A Ceased KR20110137725A (ko) 2010-06-17 2011-05-27 마이크로 렌즈의 제조에 이용되는 마스크, 및, 그것을 이용한 마이크로 렌즈의 제조 방법

Country Status (4)

Country Link
US (1) US8470501B2 (https=)
JP (1) JP5565771B2 (https=)
KR (1) KR20110137725A (https=)
TW (1) TWI512387B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105527825B (zh) * 2014-09-28 2018-02-27 联想(北京)有限公司 电子设备和显示方法
KR102938715B1 (ko) * 2020-12-03 2026-03-13 삼성전자주식회사 렌즈 어셈블리 및 이를 포함하는 전자 장치

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2945440B2 (ja) 1990-05-02 1999-09-06 シャープ株式会社 固体撮像装置の製造方法
KR100209752B1 (ko) 1996-05-16 1999-07-15 구본준 마이크로 렌즈 패턴용 마스크
JP2002006472A (ja) * 2000-06-21 2002-01-09 Oki Electric Ind Co Ltd レジストパターンの形成方法
JP2002323747A (ja) * 2001-04-24 2002-11-08 Ricoh Co Ltd フォトマスク、および該フォトマスクを用いたマイクロレンズ作成方法、ならびに該マイクロレンズ作成方法により作成したマイクロレンズ
JP2003121609A (ja) * 2001-10-11 2003-04-23 Hitachi Ltd 光学シートおよびこれを備えた表示装置
JP3698144B2 (ja) * 2003-02-07 2005-09-21 ヤマハ株式会社 マイクロレンズアレイの製法
US6995911B2 (en) * 2003-06-26 2006-02-07 Micron Technology, Inc. Micro-lenses and structures for increasing area coverage and controlling shape of micro-lenses
JP2009507669A (ja) * 2005-08-31 2009-02-26 コリア インスティチュート オブ インダストリアル テクノロジー レンズ製造方法
US7505206B2 (en) * 2006-07-10 2009-03-17 Taiwan Semiconductor Manufacturing Company Microlens structure for improved CMOS image sensor sensitivity
TWI356193B (en) * 2007-05-29 2012-01-11 United Microelectronics Corp Method for manufacturing micro-lenses of image sen

Also Published As

Publication number Publication date
US20110310492A1 (en) 2011-12-22
TW201200962A (en) 2012-01-01
JP2012004365A (ja) 2012-01-05
US8470501B2 (en) 2013-06-25
TWI512387B (zh) 2015-12-11
JP5565771B2 (ja) 2014-08-06

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