KR20110063852A - 가압 유체를 이용하여 반도체 기판을 세정하기 위한 장치 및 방법 - Google Patents

가압 유체를 이용하여 반도체 기판을 세정하기 위한 장치 및 방법 Download PDF

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Publication number
KR20110063852A
KR20110063852A KR1020117009943A KR20117009943A KR20110063852A KR 20110063852 A KR20110063852 A KR 20110063852A KR 1020117009943 A KR1020117009943 A KR 1020117009943A KR 20117009943 A KR20117009943 A KR 20117009943A KR 20110063852 A KR20110063852 A KR 20110063852A
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KR
South Korea
Prior art keywords
substrate
rollers
pressure wheel
cleaner
cleaning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020117009943A
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English (en)
Korean (ko)
Inventor
후이 첸
알렌 엘. 디'암브라
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20110063852A publication Critical patent/KR20110063852A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020117009943A 2008-10-01 2009-09-11 가압 유체를 이용하여 반도체 기판을 세정하기 위한 장치 및 방법 Withdrawn KR20110063852A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/243,685 US8844546B2 (en) 2008-10-01 2008-10-01 Apparatus and method for cleaning semiconductor substrate using pressurized fluid
US12/243,685 2008-10-01

Publications (1)

Publication Number Publication Date
KR20110063852A true KR20110063852A (ko) 2011-06-14

Family

ID=42056078

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117009943A Withdrawn KR20110063852A (ko) 2008-10-01 2009-09-11 가압 유체를 이용하여 반도체 기판을 세정하기 위한 장치 및 방법

Country Status (4)

Country Link
US (1) US8844546B2 (enExample)
JP (1) JP5504271B2 (enExample)
KR (1) KR20110063852A (enExample)
WO (1) WO2010039409A2 (enExample)

Cited By (1)

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KR102260571B1 (ko) * 2020-08-21 2021-06-07 (주)제이에스엠티 회전형 수직 습식에칭장치

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US9610615B2 (en) * 2015-03-31 2017-04-04 Taiwan Semiconductor Manufacturing Co., Ltd Method and system for cleansing wafer in CMP process of semiconductor manufacturing fabrication
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TWI765936B (zh) 2016-11-29 2022-06-01 美商東京威力科創Ｆｓｉ股份有限公司 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭
US10843236B2 (en) * 2017-01-27 2020-11-24 Tel Manufacturing And Engineering Of America, Inc. Systems and methods for rotating and translating a substrate in a process chamber
JP7357625B2 (ja) 2018-02-19 2023-10-06 ティーイーエル マニュファクチュアリング アンド エンジニアリング オブ アメリカ，インコーポレイテッド 制御可能なビームサイズの処理噴霧を有する小型電子機器処理システム
SG11202100082XA (en) * 2018-07-06 2021-02-25 Oem Group Llc Systems and methods for a spray measurement apparatus
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber
US11791173B2 (en) 2019-03-21 2023-10-17 Samsung Electronics Co., Ltd. Substrate cleaning equipment, substrate treatment system including the same, and method of fabricating semiconductor device using the substrate cleaning equipment
TWI710049B (zh) * 2019-11-18 2020-11-11 辛耘企業股份有限公司 基板沖洗裝置
CN112820664A (zh) * 2019-11-18 2021-05-18 辛耘企业股份有限公司 基板冲洗装置
EP4250341A1 (de) * 2022-03-24 2023-09-27 Siltronic AG Verfahren zum reinigen von halbleiterscheiben in einer reinigungsstrasse
CN116779508A (zh) * 2022-06-30 2023-09-19 杭州众硅电子科技有限公司 一种化学机械平坦化设备及晶圆传输方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102260571B1 (ko) * 2020-08-21 2021-06-07 (주)제이에스엠티 회전형 수직 습식에칭장치

Also Published As

Publication number Publication date
WO2010039409A2 (en) 2010-04-08
US8844546B2 (en) 2014-09-30
US20100078044A1 (en) 2010-04-01
JP2012504868A (ja) 2012-02-23
WO2010039409A3 (en) 2010-05-20
JP5504271B2 (ja) 2014-05-28

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PA0105 International application

Patent event date: 20110429

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid