JP5504271B2 - 加圧流体を使用して半導体基板を洗浄する装置及び方法 - Google Patents

加圧流体を使用して半導体基板を洗浄する装置及び方法 Download PDF

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Publication number
JP5504271B2
JP5504271B2 JP2011530090A JP2011530090A JP5504271B2 JP 5504271 B2 JP5504271 B2 JP 5504271B2 JP 2011530090 A JP2011530090 A JP 2011530090A JP 2011530090 A JP2011530090 A JP 2011530090A JP 5504271 B2 JP5504271 B2 JP 5504271B2
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Japan
Prior art keywords
substrate
chamber body
cleaning apparatus
spray bar
rollers
Prior art date
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Expired - Fee Related
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JP2011530090A
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English (en)
Japanese (ja)
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JP2012504868A5 (enExample
JP2012504868A (ja
Inventor
フイ チェン，
アレン エル． ダンブラ，
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2011530090A 2008-10-01 2009-09-11 加圧流体を使用して半導体基板を洗浄する装置及び方法 Expired - Fee Related JP5504271B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/243,685 US8844546B2 (en) 2008-10-01 2008-10-01 Apparatus and method for cleaning semiconductor substrate using pressurized fluid
US12/243,685 2008-10-01
PCT/US2009/056679 WO2010039409A2 (en) 2008-10-01 2009-09-11 Apparatus and method for cleaning semiconductor substrate using pressurized fluid

Publications (3)

Publication Number Publication Date
JP2012504868A JP2012504868A (ja) 2012-02-23
JP2012504868A5 JP2012504868A5 (enExample) 2012-11-01
JP5504271B2 true JP5504271B2 (ja) 2014-05-28

Family

ID=42056078

Family Applications (1)

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JP2011530090A Expired - Fee Related JP5504271B2 (ja) 2008-10-01 2009-09-11 加圧流体を使用して半導体基板を洗浄する装置及び方法

Country Status (4)

Country Link
US (1) US8844546B2 (enExample)
JP (1) JP5504271B2 (enExample)
KR (1) KR20110063852A (enExample)
WO (1) WO2010039409A2 (enExample)

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JP2015060852A (ja) * 2013-09-17 2015-03-30 株式会社東芝 半導体装置の製造方法及び製造装置
US9610615B2 (en) * 2015-03-31 2017-04-04 Taiwan Semiconductor Manufacturing Co., Ltd Method and system for cleansing wafer in CMP process of semiconductor manufacturing fabrication
CN109923659B (zh) 2016-11-09 2024-03-12 东京毅力科创Fsi公司 用于在处理室中处理微电子衬底的磁悬浮且旋转的卡盘
TWI765936B (zh) 2016-11-29 2022-06-01 美商東京威力科創Ｆｓｉ股份有限公司 用以對處理腔室中之微電子基板進行處理的平移與旋轉夾頭
WO2018140789A1 (en) 2017-01-27 2018-08-02 Tel Fsi, Inc. Systems and methods for rotating and translating a substrate in a process chamber
CN111937128A (zh) 2018-02-19 2020-11-13 东京毅力科创美国制造与工程公司 具有可控射束大小的处理喷雾的微电子处理系统
WO2020010357A1 (en) * 2018-07-06 2020-01-09 Oem Group, Llc Systems and methods for a spray measurement apparatus
US11545387B2 (en) 2018-07-13 2023-01-03 Tel Manufacturing And Engineering Of America, Inc. Magnetic integrated lift pin system for a chemical processing chamber
US11791173B2 (en) 2019-03-21 2023-10-17 Samsung Electronics Co., Ltd. Substrate cleaning equipment, substrate treatment system including the same, and method of fabricating semiconductor device using the substrate cleaning equipment
CN112820664A (zh) * 2019-11-18 2021-05-18 辛耘企业股份有限公司 基板冲洗装置
TWI710049B (zh) * 2019-11-18 2020-11-11 辛耘企業股份有限公司 基板沖洗裝置
KR102260571B1 (ko) * 2020-08-21 2021-06-07 (주)제이에스엠티 회전형 수직 습식에칭장치
EP4250341A1 (de) * 2022-03-24 2023-09-27 Siltronic AG Verfahren zum reinigen von halbleiterscheiben in einer reinigungsstrasse
CN116845018A (zh) * 2022-06-30 2023-10-03 杭州众硅电子科技有限公司 一种晶圆传输检测方法

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JP3990073B2 (ja) * 1999-06-17 2007-10-10 株式会社荏原製作所 基板洗浄装置及び基板洗浄方法
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Also Published As

Publication number Publication date
US20100078044A1 (en) 2010-04-01
US8844546B2 (en) 2014-09-30
WO2010039409A3 (en) 2010-05-20
KR20110063852A (ko) 2011-06-14
JP2012504868A (ja) 2012-02-23
WO2010039409A2 (en) 2010-04-08

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