KR20100138856A - 반도체 소자 - Google Patents
반도체 소자 Download PDFInfo
- Publication number
- KR20100138856A KR20100138856A KR1020100113245A KR20100113245A KR20100138856A KR 20100138856 A KR20100138856 A KR 20100138856A KR 1020100113245 A KR1020100113245 A KR 1020100113245A KR 20100113245 A KR20100113245 A KR 20100113245A KR 20100138856 A KR20100138856 A KR 20100138856A
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- chip
- interposer
- pad
- semiconductor element
- electrically connected
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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Abstract
Description
도 1b는 칩이 실장된 패키지(package)의 비스듬한 투시도.
도 2a 및 2b는 파장 및 레이저광의 흡수 계수 사이의 관계를 보여주는 그래프.
도 3a와 3b는 빔 스폿의 크기 관계를 보여주는 도면.
도 4는 결정화를 위해 사용되는 레이저 조사 장치의 구조를 보여주는 도면.
도 5a 내지 5e는 패키지를 제조하기 위한 방법을 보여주는 도면.
도 6a 내지 6c는 패키지를 제조하기 위한 방법을 보여주는 도면.
도 7a 내지 7c는 패키지를 제조하기 위한 방법을 보여주는 도면.
도 8은 패키지를 제조하기 위한 공정을 보여주는 흐름도.
도 9a 내지 9c는 패키지를 제조하기 위한 공정 동안의 다이싱(dicing)의 타이밍을 보여주는 도면.
도 10a는 패키지의 단면 구조를 보여주는 비스듬한 투시도.
도10b 내지 10d는 패키지의 단면도.
도 11은 패키지의 단면 구조를 보여주기 위한 비스듬한 투시도.
도 12a 및 12b는 패키지의 구조를 보여주는 단면도.
도 13a 및 13b는 빌트-업 패키지(built-up package)를 제조하기 위한 방법을 보여주는 도면.
도 14a 및 14b는 빌트-업 패키지를 제조하기 위한 방법을 보여주는 도면.
도 15a 및 15b는 본 발명에 따른 전자 기기들 중 하나인 셀룰러 폰의 모듈을 보여주는 상면도와 블럭도.
*도면의 주요 부분에 대한 부호의 설명*
108, 301, 527: 인터포저 205: 제 1 빔 스폿
206: 제 2 빔 스폿 500: 제 1 기판
519: 제 2 층간 절연막 521: 보호층
523: 제 2 기판 535: 제 3 기판
Claims (16)
- 반도체 소자에 있어서,
인터포저와,
상기 인터포저 상에 설치된 배선(wiring)과,
상기 인터포저 위에 제 1 반도체 소자, 제 1 패드, 및 제 1 솔더 볼(solder ball)을 포함하는 제 1 칩으로서, 상기 제 1 반도체 소자는 상기 제 1 패드에 전기적으로 접속되고, 상기 제 1 패드는 상기 제 1 솔더 볼에 전기적으로 접속된, 상기 제 1 칩과,
상기 제 1 칩 위에 제 2 반도체 소자, 제 2 패드, 및 제 2 솔더 볼을 포함하는 제 2 칩으로서, 상기 제 2 반도체 소자는 상기 제 2 패드에 전기적으로 접속되고, 상기 제 2 패드는 상기 제 2 솔더 볼에 전기적으로 접속된, 상기 제 2 칩과,
상기 인터포저의 뒷쪽(rear side)에 설치된 단자를 포함하고,
상기 배선과 상기 제 1 칩은 상기 제 1 솔더 볼을 통해 전기적으로 접속되고,
상기 제 1 칩과 상기 제 2 칩은 상기 제 2 솔더 볼을 통해 전기적으로 접속되고,
상기 단자는 상기 제 1 반도체 소자에 전기적으로 접속되는, 반도체 소자. - 반도체 소자에 있어서,
제 1 반도체 소자와 제 1 패드를 포함하는 제 1 칩으로서, 상기 제 1 패드는 상기 제 1 반도체 소자에 전기적으로 접속된, 상기 제 1 칩과,
제 2 반도체 소자와 제 2 패드를 포함하는 제 2 칩으로서, 상기 제 2 패드는 상기 제 2 반도체 소자에 전기적으로 접속된, 상기 제 2 칩과,
상기 제 1 칩과 상기 제 2 칩 사이의 범프(bump)와,
상기 제 1 칩의 뒷쪽에 설치된 단자를 포함하고,
상기 제 1 칩과 상기 제 2 칩은 상기 범프를 통해 전기적으로 접속되고,
상기 단자는 상기 제 1 반도체 소자에 전기적으로 접속되는, 반도체 소자. - 제 2 항에 있어서,
상기 제 1 칩과 상기 제 2 칩 사이의 갭들을 채우기 위해 형성되는 언더 필링(under filling)을 더 포함하는, 반도체 소자. - 반도체 소자에 있어서,
인터포저와,
상기 인터포저 위의 제 1 반도체 소자를 포함하는 제 1 칩과,
상기 제 1 칩 위의 제 2 반도체 소자를 포함하는 제 2 칩과,
상기 인터포저 상의 제 1 배선과 제 2 배선과,
제 1 와이어(wire)와,
제 2 와이어와,
상기 인터포저의 뒷쪽에 설치된 단자를 포함하고,
상기 제 1 반도체 소자는 상기 제 1 와이어를 통해 상기 제 1 배선에 전기적으로 접속되고,
상기 제 2 반도체 소자는 상기 제 2 와이어를 통해 상기 제 2 배선에 전기적으로 접속되고,
상기 단자는 상기 제 1 반도체 소자에 전기적으로 접속되는, 반도체 소자. - 제 4 항에 있어서,
상기 제 1 칩, 상기 제 2 칩, 상기 제 1 배선, 상기 제 2 배선, 상기 제 1 와이어, 및 상기 제 2 와이어를 덮는 몰드 수지(mold resin)를 더 포함하는, 반도체 소자. - 반도체 소자에 있어서,
제 1 패키지와,
상기 제 1 패키지 위의 제 2 패키지와,
상기 제 1 패키지의 뒷쪽에 설치된 단자를 포함하고,
상기 제 1 패키지는,
제 1 인터포저와,
상기 제 1 인터포저 위에 제 1 반도체 소자를 포함하는 제 1 칩과,
상기 제 1 인터포저 상의 제 1 배선과,
제 1 와이어와,
제 1 몰드 수지를 포함하고,
상기 제 2 패키지는,
제 2 인터포저와,
상기 제 2 인터포저 위에 제 2 반도체 소자를 포함하는 제 2 칩과,
상기 제 2 인터포저 상의 제 2 배선과,
제 2 와이어와,
제 2 몰드 수지를 포함하고,
상기 제 1 반도체 소자는 상기 제 1 와이어를 통해 상기 제 1 배선에 전기적으로 접속되고,
상기 제 2 반도체 소자는 상기 제 2 와이어를 통해 상기 제 2 배선에 전기적으로 접속되고,
상기 단자는 상기 제 1 반도체 소자에 전기적으로 접속되는, 반도체 소자. - 제 6 항에 있어서,
솔더 볼을 더 포함하고,
상기 제 1 패키지와 상기 제 2 패키지는 상기 솔더 볼을 통해 전기적으로 접속되는, 반도체 소자. - 반도체 소자에 있어서,
인터포저와,
상기 인터포저 상에 설치된 배선과,
상기 인터포저 위에 제 1 반도체 소자, 제 1 패드, 및 제 1 솔더 볼을 포함하는 제 1 칩으로서, 상기 제 1 반도체 소자는 상기 제 1 패드에 전기적으로 접속되고, 상기 제 1 패드는 상기 제 1 솔더 볼에 전기적으로 접속된, 상기 제 1 칩과,
상기 제 1 칩 위에 제 2 반도체 소자, 제 2 패드, 및 제 2 솔더 볼을 포함하는 제 2 칩으로서, 상기 제 2 반도체 소자는 상기 제 2 패드에 전기적으로 접속되고, 상기 제 2 패드는 상기 제 2 솔더 볼에 전기적으로 접속된, 상기 제 2 칩을 포함하고,
상기 배선 및 상기 제 1 칩은 상기 제 1 솔더 볼을 통해 전기적으로 접속되고,
상기 제 1 칩과 상기 제 2 칩은 상기 제 2 솔더 볼을 통해 전기적으로 접속되는, 반도체 소자. - 제 1 항 또는 제 8 항에 있어서,
상기 제 1 솔더 볼과 상기 배선은 열압착(thermocompression) 또는 초음파 진동을 부가한 열압착에 의해 접속되는, 반도체 소자. - 제 1 항 또는 제 8 항에 있어서,
상기 제 2 솔더 볼과 상기 제 1 칩은 열압착 또는 초음파 진동을 부가한 열압착에 의해 접속되는, 반도체 소자. - 제 1 항 또는 제 8 항에 있어서,
상기 인터포저와 상기 제 1 칩 사이의 갭들을 채우기 위해 형성되는 언더 필링을 더 포함하는, 반도체 소자. - 반도체 소자에 있어서,
제 1 반도체 소자와 제 1 패드를 포함하는 제 1 칩으로서, 상기 제 1 패드는 상기 제 1 반도체 소자에 전기적으로 접속된, 상기 제 1 칩과,
제 2 반도체 소자와 제 2 패드를 포함하는 제 2 칩으로서, 상기 제 2 패드는 상기 제 2 반도체 소자에 전기적으로 접속된, 상기 제 2 칩과,
상기 제 1 칩과 상기 제 2 칩 사이의 범프를 포함하고,
상기 제 1 칩과 상기 제 2 칩은 상기 범프를 통해 전기적으로 접속되는, 반도체 소자. - 제 2 항 또는 제 12 항에 있어서,
상기 제 2 패드 상에 형성된 상기 범프는 초음파 진동을 부가한 열압착에 의해 상기 제 1 패드에 접속되는, 반도체 소자. - 제 1 항, 제 8 항, 또는 제 12 항 중 어느 한 항에 있어서,
상기 제 1 칩과 상기 제 2 칩 사이의 갭들을 채우기 위해 형성되는 언더 필링을 더 포함하는, 반도체 소자. - 제 3 항에 있어서,
상기 언더 필링은 상기 제 1 칩과 상기 제 2 칩 사이의 접착성을 향상시키기 위한 열처리 또는 UV 광 조사에 의해 경화되는, 반도체 소자. - 제 14 항에 있어서,
상기 언더 필링은 상기 제 1 칩과 상기 제 2 칩 사이의 접착성을 향상시키기 위한 열처리 또는 UV 광 조사에 의해 경화되는, 반도체 소자.
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EP (1) | EP1432022A3 (ko) |
KR (2) | KR101021043B1 (ko) |
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KR101072241B1 (ko) | 2011-10-12 |
TW200715488A (en) | 2007-04-16 |
US7056810B2 (en) | 2006-06-06 |
US20060220211A1 (en) | 2006-10-05 |
EP1432022A2 (en) | 2004-06-23 |
CN100576533C (zh) | 2009-12-30 |
CN101174617A (zh) | 2008-05-07 |
EP1432022A3 (en) | 2008-01-23 |
CN100365760C (zh) | 2008-01-30 |
US20040121516A1 (en) | 2004-06-24 |
KR101021043B1 (ko) | 2011-03-14 |
TWI337770B (en) | 2011-02-21 |
TWI330399B (en) | 2010-09-11 |
KR20040054563A (ko) | 2004-06-25 |
US8212364B2 (en) | 2012-07-03 |
TW200416967A (en) | 2004-09-01 |
CN1508844A (zh) | 2004-06-30 |
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