KR20100119328A - 반도체 패키지 및 그 제조방법 - Google Patents

반도체 패키지 및 그 제조방법 Download PDF

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Publication number
KR20100119328A
KR20100119328A KR1020090038392A KR20090038392A KR20100119328A KR 20100119328 A KR20100119328 A KR 20100119328A KR 1020090038392 A KR1020090038392 A KR 1020090038392A KR 20090038392 A KR20090038392 A KR 20090038392A KR 20100119328 A KR20100119328 A KR 20100119328A
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South Korea
Prior art keywords
metal ball
solder
solder mask
semiconductor package
metal
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KR1020090038392A
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English (en)
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KR101211724B1 (ko
Inventor
심성보
이영재
류성욱
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엘지이노텍 주식회사
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Priority to KR1020090038392A priority Critical patent/KR101211724B1/ko
Priority to PCT/KR2010/002683 priority patent/WO2010126302A2/en
Priority to TW099113894A priority patent/TWI406342B/zh
Publication of KR20100119328A publication Critical patent/KR20100119328A/ko
Application granted granted Critical
Publication of KR101211724B1 publication Critical patent/KR101211724B1/ko

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Abstract

본 발명은 반도체 패키지의 제조방법에 관한 것으로, 본 발명의 구성은 절연기판상에 개방영역이 형성된 솔더마스크를 형성하는 1단계와 상기 솔더마스크 상에 솔더페이스트와 금속 볼을 밀착형성하고, 칩을 실장하는 2단계를 포함하여 이루어지는 것을 특징으로 한다.
본 발명에 따르면, 트레이스 상에 솔더마스크의 개방영역을 형성 후에 솔더마스크 위에 직접 솔더페이스트를 프린팅함으로써, 기판의 회로밀도를 획기적으로 증가시키며, 범프 브리지(Bump bridge)가 발생하지 않아 범프 피치가 100㎛ 이하의 미세(fine)한 경우에도 적용 가능한 효과가 있다.
비한정형(NSMD Type) 솔더마스크, Cu Ball, SOP

Description

반도체 패키지 및 그 제조방법{SEMICONDUCTOR PACKAGE WITH NSMD TYPE SOLDER MASK AND METHOD FOR MANUFACTURING THE SAME}
본 발명은 인쇄회로기판의 플립칩 실장방법에서 솔더 온 패드(SOP; Solder on Pad)의 공법의 문제를 극복하기 위한 반도체 패키지의 제조방법에 관한 것으로, 트레이스 상에 NSMD(Non-Solder Mask Defined)형 또는 SMD(Solder Mask Defined)형으로 솔더마스크의 개방영역을 형성 후에 솔더마스크 위에 직접 솔더페이스트를 프린팅함으로써, 기판의 회로밀도를 획기적으로 증가시킬 수 있으며, 범프 브리지의 발생을 방지하여 미세패턴에도 적용이 가능한 제조공정에 관한 것이다.
반도체의 칩이 소형화 다기능화, 고성능화, 대용량화가 급속이 이루어짐에 따라 패키징(packaging) 기술은 최종적으로 디바이스의 전기적 성능, 신뢰성, 생산성 및 전자 시스템의 소형화를 결정짓는 핵심기술로서 그 중요성이 더해 가고 있다. 패키징 기술이란 웨이퍼 공정에서 만들어진 개개의 칩을 최종적으로 제품화하는 일련의 공정을 의미한다. 최근에는 단위 체적당 실장효율을 더욱 높이기 위해 BGA(ball grid array), 칩 크기와 거의 같은 크기의 CSP(chip size package), 칩 위에 또 다른 칩을 적층(stack) 시켜 쌓아 올리거나, 기능이 다른 여러 개의 반도 체 칩을 하나의 패키지 안에 배열하는 다중 칩 모듈(mutli chip module, MCM) 등의 기술이 등장하고 있다.
특히, 최근 들어 전자기기의 소형화 박형화 추세에 따라 반도체 소자를 외부 환경으로부터 보호하는 패키징 기술에 있어서, 고속, 고동작, 고밀도 실장 등이 요구되고 있으며, 이러한 요구에 부응하여 웨이퍼에서 얻어진 베어 칩(bare chip)을 기판에 직접 접착하는 플립칩 실장기술이 등장하고 있다. 즉 웨이퍼에서 절단된 개개의 반도체 칩을 패키징하는 것이 아니라, 웨이퍼 그대로 인쇄회로기판(PCB)에 접합(bonding)하여 실장하는 기술인 플립칩 접합(FCB; Flip Chip Bonding) 기술이 칩의 크기로 기판에 실장 시킬 수 있어 CSP(chip size package)의 대표적인 방법으로 각광을 받고 있다.
이러한 플립칩 접합 방법에 의한 실장 시, 반도체 칩의 패드에 부착된 범프 높이에 따른 고정력을 안정하게 확보하기 위해 액상 수지물질로 언더필(under fill) 층을 형성하고, 본딩 수행 능력을 향상시키며, 칩의 손상 및 열의 전달능력을 향상시키고 있다. 이러한 플립칩 접합에 의한 실장 방식은 반도체 칩과 접속 패드 간의 접속거리가 매우 짧아 전기적 특성이 우수하며, 솔더볼(solder ball)의 자기정렬(self-alignment) 특성 때문에 접합이 용이하며, 소형, 경량화 및 칩 밑면에 입출력 단자가 있어 신호의 전송속도가 기존의 와이어(wire) 방식의 패키지보다 약 20배 정도 빠르다는 장점이 있다.
도 1a 및 도 1b을 참조하여, 종래의 패키징 기술로 패드 위에 솔더링을 통해 칩을 실장하는 SOP(Solder on Pad) 공정에 따른 패키지 제조공정을 설명하기로 한 다. 도 1a는 상술한 종래 SOP 공정의 공정흐름도이며, 이에 따른 구체적인 공정개념도를 도 1b에 도시하였다. 도 1c는 도 1b의 S 3단계의 문제점을 설명하기 위한 확대 설명도이다.
구체적으로는 SMD 범프패드가 형성된 기판을 로딩한다(S 1).
이 단계에서는 절연기판(10) 상에 솔더마스크(20)가 형성되며, 상기 솔더마스크는 패드(30)의 외측 일정부분을 덮는 구조의 SMD(Solder Mask Defined)형으로 형성된다. 상기 패드의 일부는 상기 기판을 관통하는 via(40)와 연결되는 구조로 형성될 수 있다.
다음으로, S 2 단계에서 상기 솔더마스크(20)의 상면에 메탈마스크(metal mask; 50)을 형성하고, 이를 마스크 패턴으로 하여 솔더페이스트(60)를 프린팅한다. 프린팅 방법으로는 스텐실인쇄법 등이 이용될 수 있다.
이후에, S 3단계에서는 상기 메탈마스크(50)을 분리하여 제거하게 된다.
그리고 솔더페이스트를 프린트 후 리플로우(reflow) 공정을 거치며(S 4단계), 압인(Coining) 공정을 수행한 후에(S 5단계), 반도체 웨이퍼(80)를 어태치(S 6) 한다. 이 경우 상기 반도체 웨이퍼와 상기 솔더페이스 상부 면과의 어태치는 반도체 웨이퍼 하면에 형성된 칩범프(90) 부위를 통해서 형성되며, 어태치된 반도체 웨이퍼는 리플로우 공정을 거쳐 안정되게 실장 되게 된다(S 7단계).
그러나 상술한 종래의 SOP 공정의 경우, 메탈마스크 위에 솔더 페이스트를 프린팅하는 제조단계(S 2)에서 범프피치가 미세해지는 경우에는 적용이 불가능한 문제가 발생하게 된다. 도 1c를 참조하여 구체적으로 설명하면, 범프피치가 미세하 고 좁아질 수록 메탈마스크의 두께 및 재질, 그리고 솔더 페이스트의 재질이 중요한 변수로 작용하게 된다. 즉 도시된 것처럼, 메탈마스크(50)을 솔더마스크(20)의 상부면에 형성한 후, 솔더페이스트(60)를 도포하고, 상술한 S 3단계에서 메탈마스크를 분리하는 공정을 진행하는 경우에, 상기 메탈마스크의 분리 후 미세한 영역에서의 솔더 볼륨 프린팅이 발생하게 되고, 이는 마스크 분리후에 솔더페이스트(60)가 무너져, 솔더페이스트를 구성하는 입자(61)가 솔더페이스트 패턴 간의 간격 면에 쌓이게 되며, 이웃하는 솔더페이스트와 연결되어 버리는 범프브릿지(B)가 발생하여 제품의 불량률을 높이는 치명적인 문제로 작용하게 되었다. 이는 140㎛ 이하의 범프피치(bump pitch)가 구현되는 경우 더욱 극심하게 되며, 메탈마스크를 사용하는 SOP 공법에서는 미세 피치(fine pitch)를 구현하고자 하는 환경에서 큰 문제로 발생하게 된다. 아울러 피치가 좁아질수록 메탈마스크의 가공비 및 더욱 미세한 입자를 구비한 물질이 요구되는 솔더페이스트의 가격이 급격히 상승하게 되는 문제 역시 이러한 공법의 치명적인 단점으로 작용하고 있다.
본 발명은 상술한 문제를 해결하기 위하여 안출된 것으로, 본 발명의 목적은 트레이스 상에 솔더마스크의 개방영역을 형성 후에 솔더마스크 위에 직접 솔더페이스트를 프린팅함으로써, 기판의 회로밀도를 획기적으로 증가시키며, 범프 브릿지가 발생하지 않아 범프 피치가 미세(fine)한 경우에도 적용 가능한 반도체 패키지의 제조방법을 제공하는 데 있다.
본 발명은 상술한 과제를 해결하기 위한 제조공정으로서, 절연기판상에 개방영역이 형성된 솔더마스크를 형성하는 1단계와 상기 솔더마스크 상에 솔더페이스트와 금속 볼을 밀착형성하고, 칩을 실장하는 2단계를 포함하는 반도체 패키지의 제조방법을 제공한다.
특히, 본 발명에서의 상기 1단계는, a) 절연기판상에 트레이스(Trace) 영역을 형성하는 단계; b) 상기 트레이스 영역의 인접 기판 면이 노출되는 개방영역을 적어도 1 이상 구비하는 솔더마스크를 형성하는 단계; 인 것을 특징으로 한다.
아울러, 상술한 상기 2단계는, c) 상기 솔더마스크 상에 솔더페이스트를 프린팅하는 단계; d) 상기 개방영역의 솔더페이스트 면에 금속 볼을 어태치하는 단계; e) 상기 금속 볼 상에 웨이퍼레벨의 칩을 어태치하는 단계; 를 포함하여 수행될 수 있다.
상술한 제조공정에서 사용되는 금속 볼을 밀착형성하여 어태치하는 단계에서 사용되는 금속 볼은 Cu, Ni, Sn, Al, Ag, TiN 중에서 선택되는 단일금속 또는 이들 중 선택되는 2 이상의 합금으로 형성된 금속 볼을 사용할 수 있으며, 밀착형성의 경우 이러한 금속 볼을 어태치 후에 리플로우(reflow)하는 단계로 형성될 수 있다.
또한, 상술한 금속 볼의 재질은 내부에 코어를 두고 복합층을 형성하는 구조로 이루어질 수 있으며, 이는 구체적으로 중심부가 금속 또는 플라스틱으로 형성되는 코어 외부를, Cu, Ni, Sn, Al, Ag, TiN, Pb 중에서 선택되는 금속들의 단일층 또는 복층으로 형성한 금속 볼을 사용하며, 리플로우(Reflow) 공정으로 접합시킬 수 있다.
또한, 상술한 상기 금속 볼은 외부 면에 유기물코팅 또는 금속도금의 표면처리가 수행될 수 있으며, 이 경우 상기 유기물은 OSP(Organic Solder Preservation) 코팅이며, 상기 금속도금은 Au,Sn,Ni,Pb,Ag 중 선택되는 어느 하나 또는 이들의 합금을 이용하여 수행될 수 있다.
상술한 제조공정에 따라 제조된 반도체 패키지는 절연기판상에 트레이스 영역의 인접 기판 면이 노출되는 개방영역을 구비한 솔더마스크층과 상기 개방영역에 충진되는 솔더페이스트; 상기 솔더페이스트와 웨이퍼레벨의 칩의 칩범프를 연결하는 금속볼을 포함하되, 상기 금속볼은 20~200㎛ 인 것을 특징으로 한다.
아울러 상기 금속볼에 따른 범프피치가 50~200㎛로 형성될 수 있다.
본 발명에 따르면, 트레이스 상에 솔더마스크의 개방영역을 형성 후에 솔더마스크 위에 직접 솔더페이스트를 프린팅함으로써, 기판의 회로밀도를 획기적으로 증가시키며, 범프 브릿지가 발생하지 않아 범프 피치가 100um이하의 미세(fine)한 경우에도 적용 가능한 효과가 있다.
특히, 금속 볼을 기판과 칩의 상호접속 매개체로 사용하여, 종래의 범프 크랙(Bump Crack)의 문제를 해소하며, 전기적/물리적 측면에서도 우수한 특성을 구현함과 동시에, 높은 스탠드 오프(stand-off)을 확보하여 신뢰성을 향상할 수 있으며, 어셈블리 공정에서의 언더필 및 플럭스 제거 공정에서의 불량을 줄일 수 있는 장점도 구현할 수 있다.
이하에서는 첨부한 도면을 참조하여 본 발명의 제조공정에 따른 구성 및 작용을 구체적으로 설명한다. 첨부 도면을 참조하여 설명함에 있어, 도면 부호에 관계없이 동일한 구성요소는 동일한 참조부여를 부여하고, 이에 대한 중복설명은 생략하기로 한다. 또한, 이하에서 설명하는 기판은 전자 부품 간 전기적 신호를 전달하기 위한 기판을 모두 포함하는 개념이다. (예를 들면, 본 발명에 따른 기판은 리지드(ligid)기판, 플렉스(flex) 기판, LCTT 기판, 단면/다면/다층 기판, 반도체 실장용 기판(BGA, FBGA, TBGA, CSP)등 Flip Chip을 이용하는 모든 제품군에 적용 가능하다.. 이하에서는 플립칩 접속용 반도체 패키지 기판을 일례로 설명하기로 한다.
도 2a는 본 발명에 따른 바람직한 일 실시예의 제조공정 흐름도로, 본 발명은 기판내 회로패턴을 형성하는 여러 타입에 다양하게 적용이 가능한 것으로, 예를 들면 SMD(Solder Mask Defined) 타입 또는 NSND(Non-Solder Mask Defined) 타입에 모두 적용이 가능하다. 본 실시예에서는 NSMD 타입의 적용 례를 들어 설명하기로 한다.
본 발명은, 절연기판상에 비한정형(NSMD) 타입, 즉 트레이스와 그 둘레 주변의 기판이 노출되도록 솔더마스크에 개방영역이 형성되는 구조로 솔더마스크를 형성하고, 상기 솔더마스크의 개방영역 상에 솔더페이스트를 도포하고, 이후 금속 볼을 어태치(attach)한 후, 칩을 실장하는 순서로 공정이 진행됨이 바람직하다.
도 2b를 참조하여, 본 발명에 따른 제조공정을 구체적으로 설명하기로 한다.
본 발명에 따른 반도체 패키지의 제조공정은 절연기판상에 비한정형(NSMD Type) 솔더마스크를 형성하는 P 1단계와 상기 솔더마스크 상에 솔더페이스트와 금속 볼을 밀착형성하고, 칩을 실장하는 P 2 ~ P 4단계로 구성된다.
상기 P 1단계는 절연기판상(110)에 비한정형(NSMD Type) 솔더마스크(120)를 형성하는 단계로, 구체적으로는 절연기판(110) 상에 트레이스(Trace; 130) 영역을 디자인하고, 이후 상기 트레이스 영역(130)의 인접 기판 면이 노출되는 개방영역(Opening area; OP)을 적어도 1 이상 구비하는 솔더마스크(120)를 형성함이 바람직하다. 여기서 비한정형(NSMD Type)이란 트레이스와 그 둘레 주변의 기판이 노출되도록 솔더마스크에 개방영역이 형성되는 구조를 의미한다.
상기 P 2단계는 상기 솔더마스크(120) 상에 솔더페이스트를 도포하여 상기 개방영역(OP)에 솔더페이스트(140)가 충진되도록 하는 단계로 구성된다. 즉 본 발명에서는 솔더마스크 위에 금속마스크 없이 직접 솔더 페이스트를 프린팅하는 공법으로 진행되며, 트레이스 위에 솔더 마스크를 비한정형으로 형성하여 회로의 밀도 를 증가시킨 후 솔더 페이스트 프린팅 공정을 수행하게 된다. 기존과는 달리 메탈마스크를 사용하지 않고 솔더 마스크 위에 직접 프린팅 하는 방식으로 진행되기 때문에 범프브리지 발생하지 않으며, 입경(particle size)이 큰 솔더페이스트를 적용할 수 있어 제조비용을 현저하게 낮춤과 동시에 안정적인 품질의 제품을 구현할 수 있다. 또는, 직접 인쇄하는 방식 외에 별도의 드라이 필름(Dry flim)을 솔더 마스크 위에 부착하여 솔더 페이스트를 더 쌓은 방식으로 구현할 수도 있다.
이후, P 3단계로 상기 개방영역(OP)의 솔더페이스트(140) 면에 금속 볼(150)을 어태치하는 단계와, P 4단계로 상기 금속 볼(150) 상에 웨이퍼레벨의 칩(160)을 어태치하는 단계로 구성됨이 바람직하다.
상기 P 3단계의 금속 볼은 Cu, Ni, Sn, Al, Ag, TiN 중에서 선택되는 단일금속 또는 이들 중 선택되는 2 이상의 합금으로 형성된 금속 볼이 이용될 수 있다. 여기에 금속 볼의 외부 면에 유기물코팅 또는 금속도금의 표면처리가 수행되어 금속표면이 산화되는 것을 방지할 수 있다. 예를 들면, 상기 유기물은 OSP(organic Solder Preservation) 코팅이며, 상기 금속도금은 Au,Sn,Ni,Pb Ag 도금 등으로 처리될 수 있다.
물론 상기 금속 볼의 어태치 후에는 리플로우(reflow)공정 또는 압인 공정(coining)이 추가될 수 있다. 특히, 상기 압인 공정은 선택적인 공정으로, 이는 본 발명에서 사용되는 금속 볼, 특히 바람직하게는 Cu ball의 편차가 적은 특성으로 인해 압인 공정이 생략되어 진행될 수 있다.
도 2c는 도 2b에서 진행되는 공정에 압인 공정(coining)이 추가되는 공정을 도시한 것이다. 다른 공정은 동일하며, P 3단계 이후에 금속 볼(150)의 상면을 압인 장비로 압인하게 된다. 추가된 P 31단계는 금속 볼을 어태치한 후 리플로우시키는 공정이며, P 41단계 역시 칩범프(161)와 금속 볼(150)을 접합하여 리플로우 시키는 공정을 추가한 것이다.
이와는 별개의 실시예로서, 상기 금속 볼을 중심부가 금속 또는 플라스틱으로 형성되는 코어 외부를, Cu, Ni, Sn, Al, Ag, TiN, Pb 중에서 선택되는 금속들의 단일층 또는 복층으로 형성한 것을 이용할 수도 있다.
상기 P 4단계에서는 웨이퍼 레벨의 반도체 칩(160)이 실장 되는 단계로, 구체적으로는 상기 금속 볼(150)을 리플로우 공정을 통해 안착한 후, 그 위에 상기 반도체 칩(160)의 칩범프(161)와 접합하고 리플로우 공정을 통해 안정적으로 실장이 이루어지게 된다. 특히 본 발명에서의 바람직한 일 실시예로서 상기 금속 볼을 Cu Ball을 사용하는 경우, 기판과 칩 사이의 중간 상호접속물질로 Cu를 이용하게 되는바, 비교적 높은 스탠드 오프(stand-off height)를 확보할 수 있게 된다. 이는 전기적 물리적으로 우수한 특성을 구비하는 신뢰성이 확보된 구조를 확보할 수 있다.
이를 위하여 금속 볼의 지름은 20~200㎛, 이에 다른 범프 피치도 50~200㎛의 범주에서 형성됨이 바람직하다. 즉 본 발명에 따른 바람직한 일실시예로서 Cu Ball을 사용하게 되는 경우, 종래의 Sn37Pb 또는 SAC305, SAC305, Sn0.7Cu 범프에서 매우 빈번하게 발생하는 범프크랙이 발생하지 않아 제품의 신뢰성을 높이며, 전기적 측면에서도 우수한 특성을 구비할 수 있게 된다. 나아가 기판뿐만 아니라 웨이 퍼 범핑(waper Bumping)에서도 낮은 솔더량(Low solder volume)을 적용할 수 있게 되어 범프 브리지(Bump bridge)의 발생문제도 해결할 수 있게 된다. 이는 100㎛ 이하의 파인 피치(fine pitch)의 범프구조와 SOP(Solder On Pad) 기술을 기존 프린팅 공법으로 가능하게 할 수 있는 장점이 구현될 수 있다.
도 3은 상술한 제조공정에서 제조된 반도체 패키지의 단면을 도시한 개념도이다. 구체적으로는 절연기판(110) 상에 트레이스 영역(130)의 인접 기판 면이 노출되는 개방영역(OP)을 구비한 솔더마스크층(120)과 상기 개방영역(OP)에 충진되는 솔더페이스트(140)을 구비한다. 그리고 상기 솔더페이스트(140)와 웨이퍼레벨의 칩(160)의 칩범프(161)를 연결하는 금속 볼(140)을 구비한다. 특히 바람직하게는 상기 금속 볼은 Cu Ball일 수 있으며, 상술한 바와 같이 금속 볼은 다양한 재질로 형성될 수 있다. 또한, 상기 금속볼은 20~200㎛의 크기로 형성됨이 바람직하다.
전술한 바와 같은 본 발명의 상세한 설명에서는 구체적인 실시예에 관해 설명하였다. 그러나 본 발명의 범주에서 벗어나지 않는 한도 내에서는 여러 가지 변형이 가능하다. 본 발명의 기술적 사상은 본 발명의 기술한 실시예에 국한되어 정해져서는 안 되며, 특허청구범위뿐만 아니라 이 특허청구범위와 균등한 것들에 의해 정해져야 한다.
도 1a 내지 도 1c는 종래기술에 따른 POP 제조공정과 그 문제점을 설명하기 위한 흐름도 및 개념도이다.
도 2a 및 도 2b는 본 발명에 따른 반도체 패키지의 제조공정의 흐름도 및 공정도이다.
도 3은 본 발명에 따른 반도체 패키지의 단면을 개략적으로 도시한 개념도이다.

Claims (10)

  1. 절연기판상에 개방영역이 형성되는 솔더마스크를 형성하는 1단계;
    상기 솔더마스크 상에 솔더페이스트와 금속 볼을 밀착형성하고, 칩을 실장하는 2단계;
    를 포함하는 반도체 패키지의 제조방법.
  2. 청구항 1에 있어서,
    상기 1단계는,
    a) 절연기판상에 트레이스(Trace) 영역을 형성하는 단계;
    b) 상기 트레이스 영역의 인접 기판 면이 노출되는 개방영역을 적어도 1 이상 구비하는 솔더마스크를 형성하는 단계;
    인 것을 특징으로 하는 반도체 패키지의 제조방법.
  3. 청구항 2에 있어서,
    상기 2단계는,
    c) 상기 솔더마스크 상에 솔더페이스트를 프린팅하는 단계;
    d) 상기 개방영역의 솔더페이스트 면에 금속 볼을 어태치하는 단계;
    e) 상기 금속 볼 상에 웨이퍼레벨의 칩을 어태치하는 단계;
    를 포함하는 것을 특징으로 하는 반도체 패키지의 제조방법.
  4. 청구항 3에 있어서,
    상기 c)단계는, 상기 솔더마스크 상에 Dry Film을 이용하여 솔더페이스트를 형성거나, 솔더 마스크 상에 직접 솔더페이스트를 프린팅하는 단계;인 것을 특징으로 하는 반도체 패키지의 제조방법.
  5. 청구항 1 내지 4중 어느 한 항에 있어서,
    상기 금속 볼을 밀착형성하는 단계는,
    Cu, Ni, Sn, Al, Ag, TiN 중에서 선택되는 단일금속 또는 이들 중 선택되는 2 이상의 합금으로 형성된 금속 볼을 리플로우(reflow)하는 단계인 것을 특징으로 하는 반도체 패키지의 제조방법.
  6. 청구항 1 내지 4중 어느 한 항에 있어서,
    상기 금속 볼을 밀착형성하는 단계는,
    중심부가 금속 또는 플라스틱으로 형성되는 코어 외부를,
    Cu, Ni, Sn, Al, Ag, TiN, Pb 중에서 선택되는 금속들의 단일층 또는 복층으로 형성한 금속 볼을 리플로우(Reflow)하는 단계인 것을 특징으로 하는 반도체 패키지의 제조방법.
  7. 청구항 5에 있어서,
    상기 금속 볼은 외부 면에 유기물코팅 또는 금속도금의 표면처리가 수행된 것을 특징으로 하는 반도체 패키지의 제조방법.
  8. 청구항 7에 있어서,
    상기 유기물은 OSP(Organic Solder Preservation) 코팅이며, 상기 금속도금은 Au, Sn, Ni, Pb, Ag 중 선택되는 어느 하나 또는 이들의 합금를 이용한 도금인 것을 특징으로 하는 반도체 패키지의 제조방법.
  9. 절연기판상에 트레이스 영역의 인접 기판 면이 노출되는 개방영역을 구비한 솔더마스크층과
    상기 개방영역에 충진되는 솔더페이스트;
    상기 솔더페이스트와 웨이퍼레벨의 칩의 칩범프를 연결하는 금속볼을 포함하 되,
    상기 금속볼은 20~200㎛ 인 것을 특징으로 하는 반도체패키지.
  10. 청구항 9에 있어서,
    상기 금속볼에 따른 범프피치가 50~200㎛ 인 것을 특징으로 하는 반도체 패키지.
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