KR20100080819A - 광전 반도체 몸체 - Google Patents

광전 반도체 몸체 Download PDF

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Publication number
KR20100080819A
KR20100080819A KR1020107009324A KR20107009324A KR20100080819A KR 20100080819 A KR20100080819 A KR 20100080819A KR 1020107009324 A KR1020107009324 A KR 1020107009324A KR 20107009324 A KR20107009324 A KR 20107009324A KR 20100080819 A KR20100080819 A KR 20100080819A
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KR
South Korea
Prior art keywords
layer
substrate
semiconductor
semiconductor body
disposed
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Ceased
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KR1020107009324A
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English (en)
Korean (ko)
Inventor
패트릭 로드
칼 잉글
마틴 슈트라스버그
루츠 호펠
매티아스 사바틸
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20100080819A publication Critical patent/KR20100080819A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Devices (AREA)
KR1020107009324A 2007-09-28 2008-08-27 광전 반도체 몸체 Ceased KR20100080819A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102007049772 2007-09-28
DE102007049772.7 2007-09-28
DE102008021403.5 2008-04-29
DE102008021403A DE102008021403A1 (de) 2007-09-28 2008-04-29 Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung

Publications (1)

Publication Number Publication Date
KR20100080819A true KR20100080819A (ko) 2010-07-12

Family

ID=40384515

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107009324A Ceased KR20100080819A (ko) 2007-09-28 2008-08-27 광전 반도체 몸체

Country Status (8)

Country Link
US (1) US8362506B2 (https=)
EP (1) EP2193555B1 (https=)
JP (1) JP2010541216A (https=)
KR (1) KR20100080819A (https=)
CN (1) CN101796660B (https=)
DE (1) DE102008021403A1 (https=)
TW (1) TWI431802B (https=)
WO (1) WO2009039812A1 (https=)

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US8766287B2 (en) 2010-12-20 2014-07-01 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and lighting device with the same

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DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102008032318A1 (de) 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen
DE102008039790B4 (de) * 2008-08-26 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102009019524B4 (de) * 2009-04-30 2023-07-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem
TWI487141B (zh) * 2009-07-15 2015-06-01 榮創能源科技股份有限公司 提高光萃取效率之半導體光電結構及其製造方法
KR100999779B1 (ko) * 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101038923B1 (ko) * 2010-02-02 2011-06-03 전북대학교산학협력단 개선된 발광 효율을 갖는 발광 다이오드 및 이의 제조방법
KR101692410B1 (ko) * 2010-07-26 2017-01-03 삼성전자 주식회사 발광소자 및 그 제조방법
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
DE102011114865B4 (de) 2011-07-29 2023-03-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102012217533A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
JP6529223B2 (ja) * 2014-06-30 2019-06-12 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
DE102015104144A1 (de) * 2015-03-19 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
CN108139035B (zh) 2015-09-29 2020-07-10 昕诺飞控股有限公司 具有衍射耦出的光源
FR3059788B1 (fr) * 2016-12-02 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente a extraction augmentee
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
JP6843916B2 (ja) * 2019-05-14 2021-03-17 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
DE102019114315B4 (de) * 2019-05-28 2025-04-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Anordnung und verfahren zur herstellung einer anordnung
JP7223046B2 (ja) * 2021-02-24 2023-02-15 晶元光電股▲ふん▼有限公司 光電部品

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JP4432180B2 (ja) * 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
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KR100624449B1 (ko) * 2004-12-08 2006-09-18 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
KR100657941B1 (ko) * 2004-12-31 2006-12-14 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8766287B2 (en) 2010-12-20 2014-07-01 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and lighting device with the same

Also Published As

Publication number Publication date
TWI431802B (zh) 2014-03-21
JP2010541216A (ja) 2010-12-24
WO2009039812A1 (de) 2009-04-02
US8362506B2 (en) 2013-01-29
TW200917537A (en) 2009-04-16
EP2193555B1 (de) 2016-07-06
US20100230698A1 (en) 2010-09-16
CN101796660A (zh) 2010-08-04
DE102008021403A1 (de) 2009-04-02
CN101796660B (zh) 2012-05-30
EP2193555A1 (de) 2010-06-09

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