TWI431802B - 光電半導體本件 - Google Patents
光電半導體本件 Download PDFInfo
- Publication number
- TWI431802B TWI431802B TW097134018A TW97134018A TWI431802B TW I431802 B TWI431802 B TW I431802B TW 097134018 A TW097134018 A TW 097134018A TW 97134018 A TW97134018 A TW 97134018A TW I431802 B TWI431802 B TW I431802B
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- substrate
- semiconductor body
- optoelectronic semiconductor
- auxiliary carrier
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 185
- 239000000758 substrate Substances 0.000 claims description 116
- 230000005693 optoelectronics Effects 0.000 claims description 64
- 230000006911 nucleation Effects 0.000 claims description 60
- 238000010899 nucleation Methods 0.000 claims description 60
- 239000011800 void material Substances 0.000 claims description 28
- 230000008878 coupling Effects 0.000 claims description 23
- 238000010168 coupling process Methods 0.000 claims description 23
- 238000005859 coupling reaction Methods 0.000 claims description 23
- 230000005670 electromagnetic radiation Effects 0.000 claims description 23
- -1 nitride compound Chemical class 0.000 claims description 23
- 229910002601 GaN Inorganic materials 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 344
- 238000000151 deposition Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 15
- 230000008021 deposition Effects 0.000 description 14
- 230000005855 radiation Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 208000012868 Overgrowth Diseases 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004038 photonic crystal Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910007717 ZnSnO Inorganic materials 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000013612 plasmid Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
- H10H20/835—Reflective materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
Landscapes
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007049772 | 2007-09-28 | ||
| DE102008021403A DE102008021403A1 (de) | 2007-09-28 | 2008-04-29 | Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200917537A TW200917537A (en) | 2009-04-16 |
| TWI431802B true TWI431802B (zh) | 2014-03-21 |
Family
ID=40384515
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097134018A TWI431802B (zh) | 2007-09-28 | 2008-09-05 | 光電半導體本件 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8362506B2 (https=) |
| EP (1) | EP2193555B1 (https=) |
| JP (1) | JP2010541216A (https=) |
| KR (1) | KR20100080819A (https=) |
| CN (1) | CN101796660B (https=) |
| DE (1) | DE102008021403A1 (https=) |
| TW (1) | TWI431802B (https=) |
| WO (1) | WO2009039812A1 (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007022947B4 (de) | 2007-04-26 | 2022-05-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen |
| DE102008032318A1 (de) | 2008-03-31 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen |
| DE102008039790B4 (de) * | 2008-08-26 | 2022-05-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
| DE102009019524B4 (de) * | 2009-04-30 | 2023-07-06 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem |
| TWI487141B (zh) * | 2009-07-15 | 2015-06-01 | 榮創能源科技股份有限公司 | 提高光萃取效率之半導體光電結構及其製造方法 |
| KR100999779B1 (ko) * | 2010-02-01 | 2010-12-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
| KR101038923B1 (ko) * | 2010-02-02 | 2011-06-03 | 전북대학교산학협력단 | 개선된 발광 효율을 갖는 발광 다이오드 및 이의 제조방법 |
| KR101692410B1 (ko) * | 2010-07-26 | 2017-01-03 | 삼성전자 주식회사 | 발광소자 및 그 제조방법 |
| US9070851B2 (en) * | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
| KR101154320B1 (ko) | 2010-12-20 | 2012-06-13 | 엘지이노텍 주식회사 | 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치 |
| DE102011114865B4 (de) | 2011-07-29 | 2023-03-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
| DE102012217533A1 (de) * | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements |
| JP6529223B2 (ja) * | 2014-06-30 | 2019-06-12 | 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ | 光電部品 |
| DE102015104144A1 (de) * | 2015-03-19 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers |
| CN108139035B (zh) | 2015-09-29 | 2020-07-10 | 昕诺飞控股有限公司 | 具有衍射耦出的光源 |
| FR3059788B1 (fr) * | 2016-12-02 | 2019-01-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique a diode electroluminescente a extraction augmentee |
| US11355549B2 (en) | 2017-12-29 | 2022-06-07 | Lumileds Llc | High density interconnect for segmented LEDs |
| JP6843916B2 (ja) * | 2019-05-14 | 2021-03-17 | 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ | 光電部品 |
| DE102019114315B4 (de) * | 2019-05-28 | 2025-04-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Anordnung und verfahren zur herstellung einer anordnung |
| JP7223046B2 (ja) * | 2021-02-24 | 2023-02-15 | 晶元光電股▲ふん▼有限公司 | 光電部品 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6031243A (en) * | 1996-10-16 | 2000-02-29 | Geoff W. Taylor | Grating coupled vertical cavity optoelectronic devices |
| JP4432180B2 (ja) * | 1999-12-24 | 2010-03-17 | 豊田合成株式会社 | Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体 |
| US7053419B1 (en) * | 2000-09-12 | 2006-05-30 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
| US7064355B2 (en) * | 2000-09-12 | 2006-06-20 | Lumileds Lighting U.S., Llc | Light emitting diodes with improved light extraction efficiency |
| US6791119B2 (en) * | 2001-02-01 | 2004-09-14 | Cree, Inc. | Light emitting diodes including modifications for light extraction |
| JP4055503B2 (ja) * | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | 半導体発光素子 |
| TW558844B (en) | 2002-05-15 | 2003-10-21 | Opto Tech Corp | Light emitting diode capable of increasing light emitting brightness |
| JP2004241130A (ja) * | 2003-02-03 | 2004-08-26 | Seiko Epson Corp | 発光ディスプレイパネルおよびその製造方法 |
| US20050285128A1 (en) * | 2004-02-10 | 2005-12-29 | California Institute Of Technology | Surface plasmon light emitter structure and method of manufacture |
| KR100568297B1 (ko) * | 2004-03-30 | 2006-04-05 | 삼성전기주식회사 | 질화물 반도체 발광 소자 및 그 제조 방법 |
| TWI299914B (en) | 2004-07-12 | 2008-08-11 | Epistar Corp | Light emitting diode with transparent electrically conductive layer and omni directional reflector |
| KR100576870B1 (ko) * | 2004-08-11 | 2006-05-10 | 삼성전기주식회사 | 질화물 반도체 발광소자 및 제조방법 |
| KR100682872B1 (ko) * | 2004-12-08 | 2007-02-15 | 삼성전기주식회사 | 고효율 반도체 발광 소자 및 그 제조방법 |
| KR100624449B1 (ko) * | 2004-12-08 | 2006-09-18 | 삼성전기주식회사 | 요철 구조를 포함하는 발광 소자 및 그 제조 방법 |
| KR100657941B1 (ko) * | 2004-12-31 | 2006-12-14 | 삼성전기주식회사 | 요철 구조를 포함하는 발광 소자 및 그 제조 방법 |
| SG130975A1 (en) | 2005-09-29 | 2007-04-26 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices for light emission |
| JP2007165726A (ja) * | 2005-12-15 | 2007-06-28 | Sony Corp | 半導体発光ダイオード |
| KR20070063731A (ko) * | 2005-12-15 | 2007-06-20 | 엘지전자 주식회사 | 나노 패턴이 형성된 기판의 제조방법 및 그 기판을 이용한발광소자 |
| JP2007214276A (ja) * | 2006-02-08 | 2007-08-23 | Mitsubishi Chemicals Corp | 発光素子 |
| JP2007324579A (ja) * | 2006-05-01 | 2007-12-13 | Mitsubishi Chemicals Corp | 集積型半導体発光装置およびその製造方法 |
| WO2008144922A1 (en) * | 2007-06-01 | 2008-12-04 | Trojan Technologies | Ultraviolet radiation light emitting diode device |
| US7956370B2 (en) * | 2007-06-12 | 2011-06-07 | Siphoton, Inc. | Silicon based solid state lighting |
-
2008
- 2008-04-29 DE DE102008021403A patent/DE102008021403A1/de not_active Withdrawn
- 2008-08-27 KR KR1020107009324A patent/KR20100080819A/ko not_active Ceased
- 2008-08-27 US US12/678,259 patent/US8362506B2/en active Active
- 2008-08-27 WO PCT/DE2008/001424 patent/WO2009039812A1/de not_active Ceased
- 2008-08-27 EP EP08834030.2A patent/EP2193555B1/de active Active
- 2008-08-27 CN CN200880106173.4A patent/CN101796660B/zh active Active
- 2008-08-27 JP JP2010526147A patent/JP2010541216A/ja active Pending
- 2008-09-05 TW TW097134018A patent/TWI431802B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010541216A (ja) | 2010-12-24 |
| WO2009039812A1 (de) | 2009-04-02 |
| US8362506B2 (en) | 2013-01-29 |
| TW200917537A (en) | 2009-04-16 |
| EP2193555B1 (de) | 2016-07-06 |
| US20100230698A1 (en) | 2010-09-16 |
| KR20100080819A (ko) | 2010-07-12 |
| CN101796660A (zh) | 2010-08-04 |
| DE102008021403A1 (de) | 2009-04-02 |
| CN101796660B (zh) | 2012-05-30 |
| EP2193555A1 (de) | 2010-06-09 |
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