CN101796660B - 光电半导体本体 - Google Patents

光电半导体本体 Download PDF

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Publication number
CN101796660B
CN101796660B CN200880106173.4A CN200880106173A CN101796660B CN 101796660 B CN101796660 B CN 101796660B CN 200880106173 A CN200880106173 A CN 200880106173A CN 101796660 B CN101796660 B CN 101796660B
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layer
substrate
semiconductor body
opto
layer sequence
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CN200880106173.4A
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English (en)
Chinese (zh)
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CN101796660A (zh
Inventor
帕特里克·罗德
卡尔·恩格尔
马丁·斯特拉斯伯格
卢茨·赫佩尔
马蒂亚斯·扎巴蒂尔
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means

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  • Led Devices (AREA)
CN200880106173.4A 2007-09-28 2008-08-27 光电半导体本体 Active CN101796660B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007049772 2007-09-28
DE102007049772.7 2007-09-28
DE102008021403.5 2008-04-29
DE102008021403A DE102008021403A1 (de) 2007-09-28 2008-04-29 Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
PCT/DE2008/001424 WO2009039812A1 (de) 2007-09-28 2008-08-27 Optoelektronischer halbleiterkörper

Publications (2)

Publication Number Publication Date
CN101796660A CN101796660A (zh) 2010-08-04
CN101796660B true CN101796660B (zh) 2012-05-30

Family

ID=40384515

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200880106173.4A Active CN101796660B (zh) 2007-09-28 2008-08-27 光电半导体本体

Country Status (8)

Country Link
US (1) US8362506B2 (https=)
EP (1) EP2193555B1 (https=)
JP (1) JP2010541216A (https=)
KR (1) KR20100080819A (https=)
CN (1) CN101796660B (https=)
DE (1) DE102008021403A1 (https=)
TW (1) TWI431802B (https=)
WO (1) WO2009039812A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12218109B2 (en) * 2019-05-28 2025-02-04 Osram Opto Semiconductors Gmbh Arrangement having semiconductor components that emit electromagnetic radiation and production method therefor

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102008032318A1 (de) 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen
DE102008039790B4 (de) * 2008-08-26 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102009019524B4 (de) * 2009-04-30 2023-07-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem
TWI487141B (zh) * 2009-07-15 2015-06-01 榮創能源科技股份有限公司 提高光萃取效率之半導體光電結構及其製造方法
KR100999779B1 (ko) * 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101038923B1 (ko) * 2010-02-02 2011-06-03 전북대학교산학협력단 개선된 발광 효율을 갖는 발광 다이오드 및 이의 제조방법
KR101692410B1 (ko) * 2010-07-26 2017-01-03 삼성전자 주식회사 발광소자 및 그 제조방법
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101154320B1 (ko) 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
DE102011114865B4 (de) 2011-07-29 2023-03-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102012217533A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
JP6529223B2 (ja) * 2014-06-30 2019-06-12 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
DE102015104144A1 (de) * 2015-03-19 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
CN108139035B (zh) 2015-09-29 2020-07-10 昕诺飞控股有限公司 具有衍射耦出的光源
FR3059788B1 (fr) * 2016-12-02 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente a extraction augmentee
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
JP6843916B2 (ja) * 2019-05-14 2021-03-17 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
JP7223046B2 (ja) * 2021-02-24 2023-02-15 晶元光電股▲ふん▼有限公司 光電部品

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6979584B2 (en) * 1999-12-24 2005-12-27 Toyoda Gosei Co, Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6031243A (en) * 1996-10-16 2000-02-29 Geoff W. Taylor Grating coupled vertical cavity optoelectronic devices
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
TW558844B (en) 2002-05-15 2003-10-21 Opto Tech Corp Light emitting diode capable of increasing light emitting brightness
JP2004241130A (ja) * 2003-02-03 2004-08-26 Seiko Epson Corp 発光ディスプレイパネルおよびその製造方法
US20050285128A1 (en) * 2004-02-10 2005-12-29 California Institute Of Technology Surface plasmon light emitter structure and method of manufacture
KR100568297B1 (ko) * 2004-03-30 2006-04-05 삼성전기주식회사 질화물 반도체 발광 소자 및 그 제조 방법
TWI299914B (en) 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
KR100576870B1 (ko) * 2004-08-11 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
KR100682872B1 (ko) * 2004-12-08 2007-02-15 삼성전기주식회사 고효율 반도체 발광 소자 및 그 제조방법
KR100624449B1 (ko) * 2004-12-08 2006-09-18 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
KR100657941B1 (ko) * 2004-12-31 2006-12-14 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
SG130975A1 (en) 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
JP2007165726A (ja) * 2005-12-15 2007-06-28 Sony Corp 半導体発光ダイオード
KR20070063731A (ko) * 2005-12-15 2007-06-20 엘지전자 주식회사 나노 패턴이 형성된 기판의 제조방법 및 그 기판을 이용한발광소자
JP2007214276A (ja) * 2006-02-08 2007-08-23 Mitsubishi Chemicals Corp 発光素子
JP2007324579A (ja) * 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp 集積型半導体発光装置およびその製造方法
WO2008144922A1 (en) * 2007-06-01 2008-12-04 Trojan Technologies Ultraviolet radiation light emitting diode device
US7956370B2 (en) * 2007-06-12 2011-06-07 Siphoton, Inc. Silicon based solid state lighting

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6979584B2 (en) * 1999-12-24 2005-12-27 Toyoda Gosei Co, Ltd. Method for producing group III nitride compound semiconductor and group III nitride compound semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12218109B2 (en) * 2019-05-28 2025-02-04 Osram Opto Semiconductors Gmbh Arrangement having semiconductor components that emit electromagnetic radiation and production method therefor

Also Published As

Publication number Publication date
TWI431802B (zh) 2014-03-21
JP2010541216A (ja) 2010-12-24
WO2009039812A1 (de) 2009-04-02
US8362506B2 (en) 2013-01-29
TW200917537A (en) 2009-04-16
EP2193555B1 (de) 2016-07-06
US20100230698A1 (en) 2010-09-16
KR20100080819A (ko) 2010-07-12
CN101796660A (zh) 2010-08-04
DE102008021403A1 (de) 2009-04-02
EP2193555A1 (de) 2010-06-09

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