JP2010541216A - オプトエレクトロニクス半導体本体 - Google Patents

オプトエレクトロニクス半導体本体 Download PDF

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Publication number
JP2010541216A
JP2010541216A JP2010526147A JP2010526147A JP2010541216A JP 2010541216 A JP2010541216 A JP 2010541216A JP 2010526147 A JP2010526147 A JP 2010526147A JP 2010526147 A JP2010526147 A JP 2010526147A JP 2010541216 A JP2010541216 A JP 2010541216A
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JP
Japan
Prior art keywords
layer
substrate
semiconductor body
optoelectronic semiconductor
auxiliary carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010526147A
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English (en)
Japanese (ja)
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JP2010541216A5 (https=
Inventor
パトリック ローデ
カール エンゲル
マルチン ストラスバーク
ルッツ ヘッペル
マティアス サバシル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of JP2010541216A publication Critical patent/JP2010541216A/ja
Publication of JP2010541216A5 publication Critical patent/JP2010541216A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/8215—Bodies characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
JP2010526147A 2007-09-28 2008-08-27 オプトエレクトロニクス半導体本体 Pending JP2010541216A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007049772 2007-09-28
DE102008021403A DE102008021403A1 (de) 2007-09-28 2008-04-29 Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
PCT/DE2008/001424 WO2009039812A1 (de) 2007-09-28 2008-08-27 Optoelektronischer halbleiterkörper

Publications (2)

Publication Number Publication Date
JP2010541216A true JP2010541216A (ja) 2010-12-24
JP2010541216A5 JP2010541216A5 (https=) 2011-09-01

Family

ID=40384515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526147A Pending JP2010541216A (ja) 2007-09-28 2008-08-27 オプトエレクトロニクス半導体本体

Country Status (8)

Country Link
US (1) US8362506B2 (https=)
EP (1) EP2193555B1 (https=)
JP (1) JP2010541216A (https=)
KR (1) KR20100080819A (https=)
CN (1) CN101796660B (https=)
DE (1) DE102008021403A1 (https=)
TW (1) TWI431802B (https=)
WO (1) WO2009039812A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016012707A (ja) * 2014-06-30 2016-01-21 晶元光電股▲ふん▼有限公司 光電部品及びその製造方法
JP2019145843A (ja) * 2019-05-14 2019-08-29 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
JP2021082837A (ja) * 2021-02-24 2021-05-27 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品

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* Cited by examiner, † Cited by third party
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DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102008032318A1 (de) 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen
DE102008039790B4 (de) * 2008-08-26 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102009019524B4 (de) * 2009-04-30 2023-07-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem
TWI487141B (zh) * 2009-07-15 2015-06-01 榮創能源科技股份有限公司 提高光萃取效率之半導體光電結構及其製造方法
KR100999779B1 (ko) * 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101038923B1 (ko) * 2010-02-02 2011-06-03 전북대학교산학협력단 개선된 발광 효율을 갖는 발광 다이오드 및 이의 제조방법
KR101692410B1 (ko) * 2010-07-26 2017-01-03 삼성전자 주식회사 발광소자 및 그 제조방법
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101154320B1 (ko) 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
DE102011114865B4 (de) 2011-07-29 2023-03-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102012217533A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102015104144A1 (de) * 2015-03-19 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
CN108139035B (zh) 2015-09-29 2020-07-10 昕诺飞控股有限公司 具有衍射耦出的光源
FR3059788B1 (fr) * 2016-12-02 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente a extraction augmentee
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
DE102019114315B4 (de) * 2019-05-28 2025-04-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Anordnung und verfahren zur herstellung einer anordnung

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JP2007165726A (ja) * 2005-12-15 2007-06-28 Sony Corp 半導体発光ダイオード
JP2007214276A (ja) * 2006-02-08 2007-08-23 Mitsubishi Chemicals Corp 発光素子
JP2007324579A (ja) * 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp 集積型半導体発光装置およびその製造方法

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JP4432180B2 (ja) * 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
TW558844B (en) 2002-05-15 2003-10-21 Opto Tech Corp Light emitting diode capable of increasing light emitting brightness
JP2004241130A (ja) * 2003-02-03 2004-08-26 Seiko Epson Corp 発光ディスプレイパネルおよびその製造方法
US20050285128A1 (en) * 2004-02-10 2005-12-29 California Institute Of Technology Surface plasmon light emitter structure and method of manufacture
KR100568297B1 (ko) * 2004-03-30 2006-04-05 삼성전기주식회사 질화물 반도체 발광 소자 및 그 제조 방법
TWI299914B (en) 2004-07-12 2008-08-11 Epistar Corp Light emitting diode with transparent electrically conductive layer and omni directional reflector
KR100576870B1 (ko) * 2004-08-11 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
KR100682872B1 (ko) * 2004-12-08 2007-02-15 삼성전기주식회사 고효율 반도체 발광 소자 및 그 제조방법
KR100624449B1 (ko) * 2004-12-08 2006-09-18 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
KR100657941B1 (ko) * 2004-12-31 2006-12-14 삼성전기주식회사 요철 구조를 포함하는 발광 소자 및 그 제조 방법
SG130975A1 (en) 2005-09-29 2007-04-26 Tinggi Tech Private Ltd Fabrication of semiconductor devices for light emission
KR20070063731A (ko) * 2005-12-15 2007-06-20 엘지전자 주식회사 나노 패턴이 형성된 기판의 제조방법 및 그 기판을 이용한발광소자
WO2008144922A1 (en) * 2007-06-01 2008-12-04 Trojan Technologies Ultraviolet radiation light emitting diode device
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JP2007165726A (ja) * 2005-12-15 2007-06-28 Sony Corp 半導体発光ダイオード
JP2007214276A (ja) * 2006-02-08 2007-08-23 Mitsubishi Chemicals Corp 発光素子
JP2007324579A (ja) * 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp 集積型半導体発光装置およびその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016012707A (ja) * 2014-06-30 2016-01-21 晶元光電股▲ふん▼有限公司 光電部品及びその製造方法
JP2019145843A (ja) * 2019-05-14 2019-08-29 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
JP2021082837A (ja) * 2021-02-24 2021-05-27 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
JP7223046B2 (ja) 2021-02-24 2023-02-15 晶元光電股▲ふん▼有限公司 光電部品

Also Published As

Publication number Publication date
TWI431802B (zh) 2014-03-21
WO2009039812A1 (de) 2009-04-02
US8362506B2 (en) 2013-01-29
TW200917537A (en) 2009-04-16
EP2193555B1 (de) 2016-07-06
US20100230698A1 (en) 2010-09-16
KR20100080819A (ko) 2010-07-12
CN101796660A (zh) 2010-08-04
DE102008021403A1 (de) 2009-04-02
CN101796660B (zh) 2012-05-30
EP2193555A1 (de) 2010-06-09

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