JP2010541216A5 - - Google Patents

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Publication number
JP2010541216A5
JP2010541216A5 JP2010526147A JP2010526147A JP2010541216A5 JP 2010541216 A5 JP2010541216 A5 JP 2010541216A5 JP 2010526147 A JP2010526147 A JP 2010526147A JP 2010526147 A JP2010526147 A JP 2010526147A JP 2010541216 A5 JP2010541216 A5 JP 2010541216A5
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JP
Japan
Prior art keywords
substrate
semiconductor body
optoelectronic semiconductor
body according
layer sequence
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010526147A
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English (en)
Japanese (ja)
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JP2010541216A (ja
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Publication date
Priority claimed from DE102008021403A external-priority patent/DE102008021403A1/de
Application filed filed Critical
Publication of JP2010541216A publication Critical patent/JP2010541216A/ja
Publication of JP2010541216A5 publication Critical patent/JP2010541216A5/ja
Pending legal-status Critical Current

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JP2010526147A 2007-09-28 2008-08-27 オプトエレクトロニクス半導体本体 Pending JP2010541216A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007049772 2007-09-28
DE102008021403A DE102008021403A1 (de) 2007-09-28 2008-04-29 Optoelektronischer Halbleiterkörper und Verfahren zu dessen Herstellung
PCT/DE2008/001424 WO2009039812A1 (de) 2007-09-28 2008-08-27 Optoelektronischer halbleiterkörper

Publications (2)

Publication Number Publication Date
JP2010541216A JP2010541216A (ja) 2010-12-24
JP2010541216A5 true JP2010541216A5 (https=) 2011-09-01

Family

ID=40384515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526147A Pending JP2010541216A (ja) 2007-09-28 2008-08-27 オプトエレクトロニクス半導体本体

Country Status (8)

Country Link
US (1) US8362506B2 (https=)
EP (1) EP2193555B1 (https=)
JP (1) JP2010541216A (https=)
KR (1) KR20100080819A (https=)
CN (1) CN101796660B (https=)
DE (1) DE102008021403A1 (https=)
TW (1) TWI431802B (https=)
WO (1) WO2009039812A1 (https=)

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Publication number Priority date Publication date Assignee Title
DE102007022947B4 (de) 2007-04-26 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
DE102008032318A1 (de) 2008-03-31 2009-10-01 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines solchen
DE102008039790B4 (de) * 2008-08-26 2022-05-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
DE102009019524B4 (de) * 2009-04-30 2023-07-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterkörper mit einem reflektierenden Schichtsystem
TWI487141B (zh) * 2009-07-15 2015-06-01 榮創能源科技股份有限公司 提高光萃取效率之半導體光電結構及其製造方法
KR100999779B1 (ko) * 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101038923B1 (ko) * 2010-02-02 2011-06-03 전북대학교산학협력단 개선된 발광 효율을 갖는 발광 다이오드 및 이의 제조방법
KR101692410B1 (ko) * 2010-07-26 2017-01-03 삼성전자 주식회사 발광소자 및 그 제조방법
US9070851B2 (en) * 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
KR101154320B1 (ko) 2010-12-20 2012-06-13 엘지이노텍 주식회사 발광소자, 발광소자 패키지 및 이를 포함하는 조명 장치
DE102011114865B4 (de) 2011-07-29 2023-03-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102012217533A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
JP6529223B2 (ja) * 2014-06-30 2019-06-12 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
DE102015104144A1 (de) * 2015-03-19 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
CN108139035B (zh) 2015-09-29 2020-07-10 昕诺飞控股有限公司 具有衍射耦出的光源
FR3059788B1 (fr) * 2016-12-02 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif optoelectronique a diode electroluminescente a extraction augmentee
US11355549B2 (en) 2017-12-29 2022-06-07 Lumileds Llc High density interconnect for segmented LEDs
JP6843916B2 (ja) * 2019-05-14 2021-03-17 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光電部品
DE102019114315B4 (de) * 2019-05-28 2025-04-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Anordnung und verfahren zur herstellung einer anordnung
JP7223046B2 (ja) * 2021-02-24 2023-02-15 晶元光電股▲ふん▼有限公司 光電部品

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JP4432180B2 (ja) * 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
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JP2007214276A (ja) * 2006-02-08 2007-08-23 Mitsubishi Chemicals Corp 発光素子
JP2007324579A (ja) * 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp 集積型半導体発光装置およびその製造方法
WO2008144922A1 (en) * 2007-06-01 2008-12-04 Trojan Technologies Ultraviolet radiation light emitting diode device
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