KR20100032836A - 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기 - Google Patents

고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기 Download PDF

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Publication number
KR20100032836A
KR20100032836A KR1020090088074A KR20090088074A KR20100032836A KR 20100032836 A KR20100032836 A KR 20100032836A KR 1020090088074 A KR1020090088074 A KR 1020090088074A KR 20090088074 A KR20090088074 A KR 20090088074A KR 20100032836 A KR20100032836 A KR 20100032836A
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KR
South Korea
Prior art keywords
horizontal
transfer
electrode
horizontal transfer
channel region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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KR1020090088074A
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English (en)
Korean (ko)
Inventor
히데오 간베
Original Assignee
소니 주식회사
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Application filed by 소니 주식회사 filed Critical 소니 주식회사
Publication of KR20100032836A publication Critical patent/KR20100032836A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020090088074A 2008-09-18 2009-09-17 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기 Withdrawn KR20100032836A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-239902 2008-09-18
JP2008239902A JP2010073901A (ja) 2008-09-18 2008-09-18 固体撮像装置、固体撮像装置の製造方法、及び電子機器

Publications (1)

Publication Number Publication Date
KR20100032836A true KR20100032836A (ko) 2010-03-26

Family

ID=41506522

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090088074A Withdrawn KR20100032836A (ko) 2008-09-18 2009-09-17 고체 촬상 장치, 고체 촬상 장치의 제조 방법 및 전자 기기

Country Status (6)

Country Link
US (1) US8319877B2 (https=)
EP (1) EP2166572B1 (https=)
JP (1) JP2010073901A (https=)
KR (1) KR20100032836A (https=)
CN (1) CN101677370B (https=)
TW (1) TWI404202B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011086622A1 (ja) * 2010-01-12 2013-05-16 パナソニック株式会社 固体撮像装置、その駆動方法及びカメラ
JP5466975B2 (ja) * 2010-03-15 2014-04-09 パナソニック株式会社 固体撮像装置、固体撮像装置の駆動方法及びカメラ

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016461A (ja) * 1984-06-01 1985-01-28 Hitachi Ltd 電荷移送素子
JPS63287056A (ja) * 1987-05-20 1988-11-24 Toshiba Corp 固体撮像装置
JPH0499381A (ja) * 1990-08-17 1992-03-31 Hitachi Ltd 固体撮像素子及びその製造方法
JPH04360477A (ja) * 1991-06-07 1992-12-14 Sony Corp Ｃｃｄ固体撮像素子
JPH09246519A (ja) * 1996-03-14 1997-09-19 Sony Corp 固体撮像装置およびその駆動方法
JPH10150602A (ja) * 1996-11-18 1998-06-02 Sharp Corp 固体撮像素子の駆動方法および固体撮像素子
JP3248470B2 (ja) * 1997-11-21 2002-01-21 日本電気株式会社 電荷転送装置および電荷転送装置の製造方法
JP2000022134A (ja) * 1998-07-01 2000-01-21 Matsushita Electron Corp 固体撮像装置およびその駆動方法
JP2004112304A (ja) * 2002-09-18 2004-04-08 Canon Inc 固体撮像装置、その駆動方法、及び撮像システム
US20050062868A1 (en) * 2003-03-24 2005-03-24 Tomohiro Shiiba Solid-state imaging device and method of driving solid-state imaging device
JP4165346B2 (ja) * 2003-03-24 2008-10-15 ソニー株式会社 固体撮像素子および固体撮像素子の駆動方法
JP3885769B2 (ja) * 2003-06-02 2007-02-28 ソニー株式会社 固体撮像装置および固体撮像装置の駆動方法
JP4725049B2 (ja) * 2004-07-29 2011-07-13 ソニー株式会社 固体撮像装置およびその製造方法
JP2006049451A (ja) * 2004-08-03 2006-02-16 Sony Corp 固体撮像素子及び固体撮像素子の駆動方法
JP2006120743A (ja) * 2004-10-20 2006-05-11 Sanyo Electric Co Ltd 固体撮像装置
JP2006319184A (ja) 2005-05-13 2006-11-24 Sony Corp 固体撮像装置およびカメラ
JP4530961B2 (ja) * 2005-06-30 2010-08-25 オリンパスイメージング株式会社 電子的ぶれ補正装置
JP2008104017A (ja) * 2006-10-19 2008-05-01 Sharp Corp 固体撮像装置およびその駆動方法、電子情報機器
JP2008239902A (ja) 2007-03-28 2008-10-09 Fujifilm Corp ポリマー微粒子及びその製造方法

Also Published As

Publication number Publication date
CN101677370B (zh) 2012-03-14
EP2166572A3 (en) 2013-08-07
CN101677370A (zh) 2010-03-24
US20100066886A1 (en) 2010-03-18
US8319877B2 (en) 2012-11-27
EP2166572B1 (en) 2014-07-23
TWI404202B (zh) 2013-08-01
EP2166572A2 (en) 2010-03-24
JP2010073901A (ja) 2010-04-02
TW201017874A (en) 2010-05-01

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Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20090917

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Patent event code: PA02012R01D

Patent event date: 20140905

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20090917

Comment text: Patent Application

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Patent event code: PC12021R01D

Patent event date: 20150608

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