KR20090115197A - 코발트 함유막 형성 재료, 및 상기 재료를 이용한 코발트 실리사이드막의 제조 방법 - Google Patents

코발트 함유막 형성 재료, 및 상기 재료를 이용한 코발트 실리사이드막의 제조 방법 Download PDF

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KR20090115197A
KR20090115197A KR1020097018337A KR20097018337A KR20090115197A KR 20090115197 A KR20090115197 A KR 20090115197A KR 1020097018337 A KR1020097018337 A KR 1020097018337A KR 20097018337 A KR20097018337 A KR 20097018337A KR 20090115197 A KR20090115197 A KR 20090115197A
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KR
South Korea
Prior art keywords
cobalt
containing film
forming material
group
film forming
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KR1020097018337A
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English (en)
Korean (ko)
Inventor
쇼이찌로 와까바야시
다까미쯔 고바야시
Original Assignee
쇼와 덴코 가부시키가이샤
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Publication of KR20090115197A publication Critical patent/KR20090115197A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020097018337A 2007-03-12 2008-03-07 코발트 함유막 형성 재료, 및 상기 재료를 이용한 코발트 실리사이드막의 제조 방법 KR20090115197A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007062146 2007-03-12
JPJP-P-2007-062146 2007-03-12

Publications (1)

Publication Number Publication Date
KR20090115197A true KR20090115197A (ko) 2009-11-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097018337A KR20090115197A (ko) 2007-03-12 2008-03-07 코발트 함유막 형성 재료, 및 상기 재료를 이용한 코발트 실리사이드막의 제조 방법

Country Status (5)

Country Link
JP (1) JPWO2008111499A1 (fr)
KR (1) KR20090115197A (fr)
CN (1) CN101578390A (fr)
TW (1) TW200902748A (fr)
WO (1) WO2008111499A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101384395B1 (ko) * 2009-12-25 2014-04-10 제이에스알 가부시끼가이샤 결정성 코발트 실리사이드막의 형성 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105503618A (zh) 2010-11-02 2016-04-20 宇部兴产株式会社 (酰胺氨基烷烃)金属化合物及使用所述金属化合物制备含金属的薄膜的方法
JP2013213269A (ja) * 2012-04-04 2013-10-17 Tokyo Electron Ltd 成膜方法及び記憶媒体
JP6584150B2 (ja) * 2014-06-09 2019-10-02 東ソー株式会社 コバルト錯体及びその製造方法、コバルト含有薄膜及びその作製方法
TW201602120A (zh) * 2014-06-09 2016-01-16 東曹股份有限公司 鈷錯合物及其製造方法、含有鈷的薄膜及其製作方法
JP6436826B2 (ja) * 2015-03-25 2018-12-12 東ソー株式会社 コバルト錯体及びその製造方法、コバルト含有薄膜及びその作製方法
JP6537365B2 (ja) * 2015-06-22 2019-07-03 東ソー株式会社 置換シクロペンタジエニルコバルト錯体及びその製造方法、コバルト含有薄膜及びその作製方法
JP6808281B2 (ja) * 2015-12-16 2021-01-06 東ソー株式会社 置換シクロペンタジエニルコバルト錯体及びその製造方法、コバルト含有薄膜及びその作製方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE59103871D1 (de) * 1990-07-27 1995-01-26 Kali Chemie Ag Verfahren zur Abscheidung einer Kupfer enthaltenden Schicht II.
JP2004059544A (ja) * 2002-07-31 2004-02-26 Tosoh Corp 置換シクロペンタジエニル銅錯体及びその製造方法
JP2005060814A (ja) * 2002-12-03 2005-03-10 Jsr Corp ルテニウム化合物および金属ルテニウム膜の製造法
US6989457B2 (en) * 2003-01-16 2006-01-24 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of tantalum-based materials
JP4501379B2 (ja) * 2003-09-02 2010-07-14 Ｊｓｒ株式会社 ルテニウム−シリコン混合膜を形成する方法
JP2006037123A (ja) * 2004-07-22 2006-02-09 Toyoshima Seisakusho:Kk 薄膜用ｃｖｄ原料及びそれを用いて得られる薄膜

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101384395B1 (ko) * 2009-12-25 2014-04-10 제이에스알 가부시끼가이샤 결정성 코발트 실리사이드막의 형성 방법

Also Published As

Publication number Publication date
WO2008111499A1 (fr) 2008-09-18
CN101578390A (zh) 2009-11-11
JPWO2008111499A1 (ja) 2010-06-24
TW200902748A (en) 2009-01-16

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