WO2010032673A1 - Matériau de formation d’un film contenant du nickel et procédé de fabrication d’un film contenant du nickel - Google Patents

Matériau de formation d’un film contenant du nickel et procédé de fabrication d’un film contenant du nickel Download PDF

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Publication number
WO2010032673A1
WO2010032673A1 PCT/JP2009/065823 JP2009065823W WO2010032673A1 WO 2010032673 A1 WO2010032673 A1 WO 2010032673A1 JP 2009065823 W JP2009065823 W JP 2009065823W WO 2010032673 A1 WO2010032673 A1 WO 2010032673A1
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nickel
containing film
film
forming material
film forming
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PCT/JP2009/065823
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English (en)
Japanese (ja)
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隆典 青木
孝充 小林
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昭和電工株式会社
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
    • C07F15/04—Nickel compounds
    • C07F15/045—Nickel compounds without a metal-carbon linkage
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD

Definitions

  • the present invention relates to a nickel-containing film forming material and a method for producing a nickel-containing film. More specifically, the present invention relates to a nickel-containing film forming material used for film formation by CVD (chemical vapor deposition) and a method for producing a nickel-containing film using the material.
  • CVD chemical vapor deposition
  • This nickel silicide film has been formed by a sputtering method so far.
  • a sputtering method there is a concern about physical damage to the semiconductor element, and uniform film formation is difficult.
  • CVD chemical vapor deposition
  • CVD is a method of depositing a film on a silicon substrate by volatilizing a film forming material and flowing it in a gas state and utilizing a chemical reaction in a reactor.
  • CVD can be performed at a low temperature by film formation under reduced pressure, but the conditions for film formation vary greatly depending on the film forming material used.
  • a characteristic required for the film forming material used at this time includes a high vapor pressure.
  • the formed nickel-containing film contains carbon. There was a problem that was likely to remain. When carbon remains, for example, the resistance value of the nickel-containing film tends to increase.
  • tetrakis (trifluorophosphine) nickel is less likely to remain carbon in the nickel-containing film formed due to the weak interaction between nickel and the unshared electron pair of the phosphorus trifluorophosphine ligand,
  • HF was produced as a by-product due to cleavage of the PF bond of the ligand during film formation.
  • the formed nickel-containing film tends to be damaged.
  • the present invention is intended to solve the problems associated with the prior art as described above, and provides a nickel-containing film forming material in which carbon does not easily remain in a formed nickel-containing film and HF is not easily produced as a by-product. There is to do. Furthermore, it is providing the nickel containing film forming material whose nickel containing film is a nickel film or a nickel silicide film.
  • Another object of the present invention is to provide a method for producing a nickel-containing film using the nickel-containing film forming material. Furthermore, it is providing the manufacturing method of the nickel containing film whose nickel containing film is a nickel film or a nickel silicide film.
  • the inventors of the present invention can form a stable film by CVD using a nickel-containing film forming material containing at least one nickel complex having a specific structure. It has been found that carbon is unlikely to remain in the formed nickel-containing film, and that HF is hardly generated as a by-product during film formation. Furthermore, the present inventors have found that the nickel-containing film forming material is suitable for forming a nickel silicide film. The nickel-containing film forming material of the present invention has not yet been reported.
  • Ni (PF 2 (CF 3 )) 4 Ni (PF (CF 3 ) 2 ) 4 , Ni (P (CF 3 ) 3 ) 4 , Ni (PF 2 R 2 ) 4 , Ni (PFR 3 R 4 ) Selected from the group consisting of 4 and Ni (PF 2 NR 1 R 5 ) 4 (wherein R 1 to R 5 each independently represents H, an alkyl group having 1 to 6 carbon atoms or a phenyl group).
  • a nickel-containing film-forming material comprising at least one nickel complex.
  • the nickel complex is Ni (PFR 3 R 4 ) 4 (wherein R 3 and R 4 each independently represents H, an alkyl group having 1 to 6 carbon atoms, or a phenyl group) [1].
  • the nickel complex is Ni (PF 2 NR 1 R 5 ) 4 (wherein R 1 and R 5 each independently represents H, an alkyl group having 1 to 6 carbon atoms, or a phenyl group) [ 1] The nickel-containing film forming material.
  • the nickel-containing film forming material according to any one of [1] to [11], wherein the nickel-containing film is a nickel film or a nickel silicide film.
  • the Si source of the nickel silicide film is Si a H 2a + 2 (where a is an integer of 1 to 3) or R b SiH 4-b (where b is an integer of 1 to 3) And R represents an alkyl group having 1 to 3 carbon atoms.)
  • the nickel-containing film-forming material according to [12] which is at least one silicon compound represented by the structural formula:
  • CVD chemical vapor deposition
  • a stable nickel-containing film can be formed by CVD, carbon is unlikely to remain in the formed nickel-containing film, and HF is hardly generated as a by-product during film formation. That is, by using the nickel-containing film forming material of the present invention, a good nickel-containing film and further a good nickel silicide film can be easily formed by CVD.
  • the nickel-containing film forming material of the present invention includes Ni (PF 2 (CF 3 )) 4 , Ni (PF (CF 3 ) 2 ) 4 , Ni (P (CF 3 ) 3 ) 4 , Ni (PF 2 R 2 ). 4 , Ni (PFR 3 R 4 ) 4 and Ni (PF 2 NR 1 R 5 ) 4 (wherein R 1 to R 5 are each independently H, an alkyl group having 1 to 6 carbon atoms, or a phenyl group) And at least one nickel complex selected from the group consisting of:
  • nickel complex examples include Ni (PF 2 (CF 3 )) 4 , Ni (PF (CF 3 ) 2 ) 4 , Ni (P (CF 3 ) 3 ) 4 , Ni (PF 2 R 2 ) 4 (however, R 2 represents H, an alkyl group having 1 to 6 carbon atoms or a phenyl group.), Ni (PF 2 NR 1 R 5 ) 4 (where R 1 and R 5 are each independently H, 1 to 6 represents an alkyl group or a phenyl group), and Ni (PF 2 (CF 3 )) 4 , Ni (PF (CF 3 ) 2 ) 4 , Ni (PF 2 R 2 ) 4 (wherein R 2 is more preferably H, an alkyl group having 1 to 6 carbon atoms or a phenyl group.
  • the vapor pressure tends to increase.
  • such a nickel complex has high volatility, it can be suitably used for a film forming method in which a film forming material is volatilized
  • the nickel-containing film forming material of the present invention includes, for example, Ni (PF 2 R 2 ) 4 (wherein R 2 represents H, an alkyl group having 1 to 6 carbon atoms or a phenyl group).
  • Ni (PF 2 R 2) 4 in R 2 are -CH 3, -C 2 H 5, is preferably -C 3 H 7 or -C 4 H 9.
  • Ni (PF 2 R 2 ) 4 Ni (PF 2 (CH 3 )) 4 , Ni (PF 2 (C 2 H 5 )) 4 , Ni (PF 2 (C 3 H 7 )) 4 or Ni (PF 2 (C 4 H 9)) 4 can be mentioned.
  • Ni (PF 2 R 2 ) 4 Ni (PF 2 (CH 3 )) 4 , Ni (PF 2 (C 2 H 5 )) 4 , Ni (PF 2 (C 3 H 7 )) 4 or Ni (PF 2 (C 4 H 9)) 4 can be mentioned.
  • the vapor pressure tends to increase.
  • such a nickel complex has high volatility
  • the nickel-containing film-forming material of the present invention is, for example, Ni (PFR 3 R 4 ) 4 (wherein R 3 and R 4 each independently represents H, an alkyl group having 1 to 6 carbon atoms, or a phenyl group). including.
  • Ni (PFR 3 R 4) R 3 and R 4 are each independently in 4, -CH 3, -C 2 H 5, is preferably -C 3 H 7 or -C 4 H 9.
  • Specific examples of Ni (PFR 3 R 4 ) 4 include Ni (PF (CH 3 ) 2 ) 4 , Ni (PF (C 2 H 5 ) 2 ) 4 , Ni (PF (C 3 H 7 ) 2 ) 4 or Ni (PF (C 4 H 7 ) 2) 4 and the like.
  • the vapor pressure tends to increase.
  • such a nickel complex has high volatility, it can be suitably used for a film forming method in which a film forming material is volatilized, for example, CVD.
  • the nickel-containing film-forming material of the present invention is, for example, Ni (PF 2 NR 1 R 5 ) 4 (where R 1 and R 5 each independently represents H, an alkyl group having 1 to 6 carbon atoms, or a phenyl group) .)including.
  • R 1 and R 5 in Ni (PF 2 NR 1 R 5 ) 4 are each independently preferably —H, —CH 3 , —C 2 H 5 , —C 3 H 7 or —C 4 H 9. .
  • Specific examples of Ni (PF 2 NR 1 R 5 ) 4 include Ni (PF 2 NH (CH 3 )) 4 , Ni (PF 2 N (CH 3 ) 2 ) 4 , Ni (PF 2 NH (C 2 H) 5)) 4, Ni (PF 2 N (C 2 H 5) 2) 4, Ni (PF 2 NH (C 3 H 7)) 4, Ni (PF 2 N (C 3 H 7) 2) 4, Ni (PF 2 NH (C 4 H 7 )) 4 or Ni (PF 2 N (C 4 H 7 ) 2 ) 4 may be mentioned.
  • the vapor pressure tends to increase.
  • such a nickel complex has high volatility, it can be suitably used for a film forming method in which a film forming material is volatilized, for example, CVD
  • a nickel-containing film forming material containing at least one kind of nickel complex as described above When a nickel-containing film forming material containing at least one kind of nickel complex as described above is used, carbon does not easily remain in the formed nickel-containing film, and HF is hardly generated as a by-product during film formation. In particular, a stable nickel-containing film can be easily formed by CVD.
  • the nickel-containing film forming material of the present invention can also contain two or more of the above nickel complexes.
  • the nickel-containing film forming material of the present invention can also contain a rare gas such as helium, neon, argon or krypton.
  • the method for producing the nickel complex contained in the nickel-containing film forming material of the present invention can be produced by a known method.
  • it can be produced by ligand exchange with a ligand of a nickel complex intended for tetracarbonyl nickel or dicyclopentadienyl nickel.
  • the nickel complex can be purified by a known method as necessary.
  • the purification method include distillation or adsorption.
  • the nickel-containing film forming material of the present invention is preferably used for film formation by CVD, but is not limited to CVD as long as it is a film forming method using vapor of the nickel-containing film forming material.
  • a film is formed by chemical vapor deposition (CVD) using the nickel-containing film forming material.
  • CVD chemical vapor deposition
  • various CVDs that decompose the nickel complex which is a Ni source
  • thermal CVD that thermally decomposes
  • photo CVD that decomposes by heat and light
  • plasma CVD that activates and decomposes by plasma
  • laser-assisted CVD that activates and decomposes by laser
  • active by ion beam For example, ion beam assisted CVD for photolysis and photolysis.
  • the reaction pressure when forming the nickel-containing film is preferably 0.0013 to 101.3 kPa, more preferably 0.013 to 101.3 kPa, and still more preferably 0.13 to 101.3 kPa.
  • the reaction temperature is preferably 50 to 800 ° C, more preferably 100 to 500 ° C.
  • a nickel film or a nickel silicide film is preferable.
  • the nickel film or nickel silicide film must use the nickel complex as a Ni source.
  • the Si source of the nickel silicide film is preferably Si a H 2a + 2 (where a is an integer of 1 to 3) or R b SiH 4-b (where b is an integer of 1 to 3). And R represents an alkyl group having 1 to 3 carbon atoms.), And more preferably a silane, disilane, trisilane, methylsilane, dimethylsilane, trimethylsilane, Ethylsilane, diethylsilane, and triethylsilane.
  • the vapor pressure tends to increase.
  • various types of CVD for decomposing the nickel complex as a Ni source can be used. That is, as various types of CVD, thermal CVD that thermally decomposes, photo CVD that decomposes by heat and light, plasma CVD that activates and decomposes by plasma, laser-assisted CVD that activates and decomposes by laser, and active by ion beam For example, ion beam assisted CVD for photolysis and photolysis. These various types of CVD can be used for forming a nickel film or a nickel silicide film. Also, when the silicon compound that is the Si source of the nickel silicide film is decomposed, various types of CVD can be used in the same manner.
  • the reaction pressure when forming the nickel film or nickel silicide film is preferably 0.0013 to 101.3 kPa, more preferably 0.013 to 101.3 kPa, and still more preferably 0.13 to 101.3 kPa.
  • the reaction temperature is preferably 50 to 800 ° C, more preferably 100 to 500 ° C.
  • Ni or Si is likely to be reduced.
  • the reducing agent include hydrogen.
  • the separated colorless liquid was analyzed by GC-MS (HP 6890 made by HP / JMS-Automass II made by JEOL), ICP-AES (VISTA-PRO made by SII) and an organic element analyzer (CHNS-932 made by LECO). PF 2 (CF 3 )) 4 (28 g, yield 75%).
  • the collected colorless crystals were analyzed by GC-MS (HP 6890 manufactured by HP / JMS-AUTOMASSII manufactured by JEOL), ICP-AES (VISTA-PRO manufactured by SII) and an organic element analyzer (CHNS-932 manufactured by LECO). PF (CF 3 ) 2 ) 4 (20 g, 83% yield).
  • the separated colorless liquid was analyzed by GC-MS (HP 6890 manufactured by HP / JMS-AUTOMASSII manufactured by JEOL), ICP-AES (VISTA-PRO manufactured by SII) and an organic element analyzer (CHNS-932 manufactured by LECO).
  • PF 2 (CH 3 )) 4 (tetrakis (methyldifluorophosphine)) nickel was identified (11 g, 72% yield).
  • Example 1 -Film formation evaluation of Ni (PF 2 (CF 3 )) 4
  • Example 1-1 For Ni (PF 2 (CF 3 )) 4 obtained in Synthesis Example 1, the volatilization rate when heated to 500 ° C. using a differential thermothermal gravimetric simultaneous measurement device (TG / DTA 6200 manufactured by SII) was determined. It was 99.8 mass%. It was found that the volatile residue is very small and suitable as a nickel-containing film forming material.
  • Example 1-2 Nickel film formation using Ni (PF 2 (CF 3 )) 4 A film was formed in the same manner as in Example 1-1 except that H 2 gas was used instead of the mixed gas of SiH 4 and H 2 . As a result, deposition of the film was confirmed on the substrate, and the composition of the film was examined by an X-ray photoelectron analyzer (XPS) (AXIS-NOVA manufactured by KRATOS), and the presence of nickel was confirmed. Moreover, almost no carbon was confirmed. Further, the film was confirmed to be a nickel film by analysis with an X-ray diffractometer (XRD) (Rigaku RAD- ⁇ X). Moreover, almost no HF was confirmed in the analysis of the exhaust gas from the CVD apparatus. The exhaust gas was analyzed by FT-IR (Nicolet 380 manufactured by Thermo Electron).
  • Example 2 About ⁇ Ni (PF (CF 3) 2) 4 Ni obtained by film formation evaluation Synthesis Example 2 (PF (CF 3) 2) 4, using a differential thermogravimetric simultaneous measurement device (SII manufactured by TG / DTA6200) The volatilization rate when heated to 500 ° C. was 99.6% by mass. It was found that the volatile residue is very small and suitable as a nickel-containing film forming material.
  • Example 2-1 ⁇ Ni (PF (CF 3) 2) 4 using a Ni (PF (CF 3) 2 ) 4 obtained in the nickel silicide film formed in Synthesis Example 2 using a, except that the first holding temperature of the raw material vessel 80 ° C. was formed in the same manner as in Example 1-1.
  • XPS X-ray photoelectron analyzer
  • XRD X-ray diffractometer
  • Example 2-2 Nickel film formation using Ni (PF (CF 3 ) 2 ) 4 A film was formed in the same manner as in Example 2-1, except that H 2 gas was used instead of the mixed gas of SiH 4 and H 2 . As a result, deposition of the film was confirmed on the substrate, and when the composition of the film was examined with an X-ray photoelectron analyzer (XPS) (AXIS-NOVA manufactured by KRATOS), the presence of nickel was confirmed. Moreover, almost no carbon was confirmed. Further, the film was confirmed to be a nickel film by analysis with an X-ray diffractometer (XRD) (Rigaku RAD- ⁇ X). Moreover, almost no HF was confirmed in the analysis of the exhaust gas from the CVD apparatus. The exhaust gas was analyzed by FT-IR (Nicolet 380 manufactured by Thermo Electron).
  • Example 3 About ⁇ Ni (PF 2 (CH 3 )) 4 Ni was obtained by film formation evaluation Synthesis Example 3 (PF 2 (CH 3)) 4, using a differential thermogravimetric simultaneous measurement device (SII manufactured by TG / DTA6200) The volatilization rate when heated to 500 ° C. was 99.5% by mass. It was found that the volatile residue is very small and suitable as a nickel-containing film forming material.
  • Example 3-1 ⁇ Ni (PF 2 (CH 3 )) 4 was obtained with nickel silicide film formed Synthesis Example 3 using Ni (PF 2 (CH 3) ) , except that 4 was used in the same manner as in Example 1-1 deposited did.
  • XPS X-ray photoelectron analyzer
  • XRD X-ray diffractometer
  • Example 3-2 Nickel film formation using Ni (PF 2 (CH 3 )) 4 A film was formed in the same manner as in Example 3-1, except that H 2 gas was used instead of the mixed gas of SiH 4 and H 2 . As a result, deposition of the film was confirmed on the substrate, and when the composition of the film was examined with an X-ray photoelectron analyzer (XPS) (AXIS-NOVA manufactured by KRATOS), the presence of nickel was confirmed. Moreover, almost no carbon was confirmed. Further, the film was confirmed to be a nickel film by analysis with an X-ray diffractometer (XRD) (Rigaku RAD- ⁇ X). Moreover, almost no HF was confirmed in the analysis of the exhaust gas from the CVD apparatus. The exhaust gas was analyzed by FT-IR (Nicolet 380 manufactured by Thermo Electron).
  • XRD X-ray diffractometer

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Abstract

L’invention concerne un matériau de formation d’un film contenant du nickel qui ne cause pas facilement de carbone résiduel dans le film contenant du nickel et qui n’a pas tendance à produire du HF en tant que sous-produit lors de la formation d’un film par CVD (dépôt chimique en phase vapeur). L’invention concerne également un matériau de formation d’un film contenant du nickel, le film contenant du nickel étant un film de siliciure de nickel. Le matériau de formation d’un film contenant du nickel est caractérisé en ce qu’il contient au moins un type de complexe de nickel choisi dans un groupe comprenant Ni(PF2(CF3))4, Ni(PF(CF3)2)4, Ni(P(CF3)3)4, Ni(PF2R2)4, Ni(PFR3R4)4 et Ni(PF2NR1R5)4 (R1 à R5 représentant chacun individuellement H ou un groupe alkyle ou un groupe phényle contenant 1 à 6 carbones).
PCT/JP2009/065823 2008-09-22 2009-09-10 Matériau de formation d’un film contenant du nickel et procédé de fabrication d’un film contenant du nickel WO2010032673A1 (fr)

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JP2010529730A JPWO2010032673A1 (ja) 2008-09-22 2009-09-10 ニッケル含有膜形成材料およびニッケル含有膜の製造方法

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JP2008242446 2008-09-22
JP2008-242446 2008-09-22

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014188629A1 (fr) * 2013-05-22 2014-11-27 田中貴金属工業株式会社 Matière première de dépôt chimique en phase vapeur comprenant un composé organique du nickel, et procédé de dépôt chimique en phase vapeur utilisant ladite matière première de dépôt chimique en phase vapeur
EP3054031A4 (fr) * 2013-10-02 2017-06-07 Tanaka Kikinzoku Kogyo K.K. PROCÉDÉ POUR PRODUIRE UN FILM MINCE DE NICKEL SUR UN SUBSTRAT DE Si PAR UN PROCÉDÉ DE DÉPÔT CHIMIQUE EN PHASE VAPEUR ET PROCÉDÉ POUR PRODUIRE UN FILM MINCE DE SILICIURE DE Ni SUR LE SUBSTRAT DE Si

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006045649A (ja) * 2004-08-06 2006-02-16 Tri Chemical Laboratory Inc 膜形成材料、膜形成方法、及び素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006045649A (ja) * 2004-08-06 2006-02-16 Tri Chemical Laboratory Inc 膜形成材料、膜形成方法、及び素子

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NIXON, JOHN F. ET AL.: "Phosphorus-fluorine compounds. XIV. Direct syntheses of tetrakis (fluorophosphine) complexes of zerovalent nickel", JOURNAL OF THE CHEMICAL SOCIETY (A): INORGANIC, PHYSICAL, THEORETICAL, vol. 7, 1969, pages 1089 - 1091 *
SEEL, FRITZ ET AL.: "Fluophosphine complexes of nickel", CHEMISCHE BERICHTE, vol. 94, 1961, pages 1173 - 1184 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014188629A1 (fr) * 2013-05-22 2014-11-27 田中貴金属工業株式会社 Matière première de dépôt chimique en phase vapeur comprenant un composé organique du nickel, et procédé de dépôt chimique en phase vapeur utilisant ladite matière première de dépôt chimique en phase vapeur
US9447495B2 (en) 2013-05-22 2016-09-20 Tanaka Kikinzoku Kogyo K.K. Chemical vapor deposition raw material containing organic nickel compound, and chemical vapor deposition method using the chemical vapor deposition raw material
EP3054031A4 (fr) * 2013-10-02 2017-06-07 Tanaka Kikinzoku Kogyo K.K. PROCÉDÉ POUR PRODUIRE UN FILM MINCE DE NICKEL SUR UN SUBSTRAT DE Si PAR UN PROCÉDÉ DE DÉPÔT CHIMIQUE EN PHASE VAPEUR ET PROCÉDÉ POUR PRODUIRE UN FILM MINCE DE SILICIURE DE Ni SUR LE SUBSTRAT DE Si
US9805936B2 (en) 2013-10-02 2017-10-31 Tanaka Kikinzoku Kogyo K.K. Method for producing nickel thin film on a Si substrate by chemical vapor deposition method, and method for producing Ni silicide thin film on Si substrate

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