KR20090111861A - 박막 발광 다이오드칩 및 박막 발광 다이오드칩의 제조 방법 - Google Patents
박막 발광 다이오드칩 및 박막 발광 다이오드칩의 제조 방법 Download PDFInfo
- Publication number
- KR20090111861A KR20090111861A KR1020097017989A KR20097017989A KR20090111861A KR 20090111861 A KR20090111861 A KR 20090111861A KR 1020097017989 A KR1020097017989 A KR 1020097017989A KR 20097017989 A KR20097017989 A KR 20097017989A KR 20090111861 A KR20090111861 A KR 20090111861A
- Authority
- KR
- South Korea
- Prior art keywords
- emitting diode
- light emitting
- thin film
- diode chip
- film light
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims abstract description 68
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- 239000004065 semiconductor Substances 0.000 claims description 27
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 6
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
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- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
- B29C43/20—Making multilayered or multicoloured articles
- B29C43/203—Making multilayered articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
- B29L2011/00—Optical elements, e.g. lenses, prisms
- B29L2011/0016—Lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007004304A DE102007004304A1 (de) | 2007-01-29 | 2007-01-29 | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
DE102007004304.1 | 2007-01-29 | ||
PCT/EP2008/050716 WO2008092774A1 (de) | 2007-01-29 | 2008-01-22 | Dünnfilm-leuchtdioden-chip und verfahren zur herstellung eines dünnfilm-leuchtdioden-chips |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20090111861A true KR20090111861A (ko) | 2009-10-27 |
Family
ID=39203298
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020097017989A KR20090111861A (ko) | 2007-01-29 | 2008-01-22 | 박막 발광 다이오드칩 및 박막 발광 다이오드칩의 제조 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9142720B2 (zh) |
EP (1) | EP2132791B1 (zh) |
KR (1) | KR20090111861A (zh) |
CN (1) | CN101601143B (zh) |
DE (1) | DE102007004304A1 (zh) |
TW (1) | TWI396299B (zh) |
WO (1) | WO2008092774A1 (zh) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005055293A1 (de) | 2005-08-05 | 2007-02-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip |
DE102007004303A1 (de) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement und Bauelement-Verbund |
DE102007004304A1 (de) | 2007-01-29 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
DE102007041896A1 (de) | 2007-09-04 | 2009-03-05 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
DE102008013030A1 (de) | 2007-12-14 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
DE102008038748B4 (de) | 2008-08-12 | 2022-08-04 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Oberflächenmontierbares, optoelektronisches Halbleiterbauteil |
DE102008045653B4 (de) | 2008-09-03 | 2020-03-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
JP2010062493A (ja) * | 2008-09-08 | 2010-03-18 | Stanley Electric Co Ltd | 半導体発光素子および半導体発光素子の製造方法 |
DE102008047579B4 (de) | 2008-09-17 | 2020-02-06 | Osram Opto Semiconductors Gmbh | Leuchtmittel |
DE102008048648A1 (de) | 2008-09-24 | 2010-04-08 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
DE102008048650A1 (de) | 2008-09-24 | 2010-04-01 | Osram Opto Semiconductors Gmbh | Strahlung emittierende Vorrichtung |
DE102008051044A1 (de) | 2008-10-09 | 2010-04-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
KR101007117B1 (ko) | 2008-10-16 | 2011-01-11 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
TWI527260B (zh) * | 2008-11-19 | 2016-03-21 | 廣鎵光電股份有限公司 | 發光元件結構及其半導體晶圓結構 |
DE102009004724A1 (de) | 2009-01-15 | 2010-07-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauteils und optoelektronisches Bauteil |
DE102009023351A1 (de) | 2009-05-29 | 2010-12-02 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
EP2270882A1 (en) * | 2009-06-30 | 2011-01-05 | Koninklijke Philips Electronics N.V. | Light emitting diode circuit for ambient light |
DE102009032606A1 (de) | 2009-07-10 | 2011-01-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Flachlichtquelle |
DE102009033686A1 (de) | 2009-07-17 | 2011-01-20 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines anorganischen optoelektronischen Halbleiterbauteils |
DE102009034370A1 (de) | 2009-07-23 | 2011-01-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil und Verfahren zur Herstellung eines optischen Elements für ein optoelektronisches Bauteil |
DE102009060759A1 (de) | 2009-12-30 | 2011-07-07 | OSRAM Opto Semiconductors GmbH, 93055 | Strahlungsemittierende Vorrichtung, Modul mit einer strahlungsemittierenden Vorrichtung und Verfahren zur Herstellung einer strahlungsemittierenden Vorrichtung |
DE102010054068A1 (de) * | 2010-12-10 | 2012-06-14 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements und Bauelement |
TWI506813B (zh) * | 2013-04-09 | 2015-11-01 | Unity Opto Technology Co Ltd | Single crystal dual light source light emitting element |
DE102013210668A1 (de) * | 2013-06-07 | 2014-12-11 | Würth Elektronik GmbH & Co. KG | Verfahren zur Herstellung eines optischen Moduls |
Family Cites Families (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE8711105U1 (de) | 1987-08-14 | 1987-11-26 | Siemens AG, 1000 Berlin und 8000 München | Leiterplatte für die Elektronik |
JP2953468B2 (ja) | 1989-06-21 | 1999-09-27 | 三菱化学株式会社 | 化合物半導体装置及びその表面処理加工方法 |
JPH0992878A (ja) * | 1995-09-25 | 1997-04-04 | Shin Etsu Handotai Co Ltd | 半導体発光素子及びその製造方法 |
US5779924A (en) | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
KR100481994B1 (ko) | 1996-08-27 | 2005-12-01 | 세이코 엡슨 가부시키가이샤 | 박리방법,박막디바이스의전사방법,및그것을이용하여제조되는박막디바이스,박막집적회로장치및액정표시장치 |
DE19640594B4 (de) | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
JP4032443B2 (ja) | 1996-10-09 | 2008-01-16 | セイコーエプソン株式会社 | 薄膜トランジスタ、回路、アクティブマトリクス基板、液晶表示装置 |
JP3156756B2 (ja) | 1997-01-10 | 2001-04-16 | サンケン電気株式会社 | 半導体発光素子 |
US5833073A (en) | 1997-06-02 | 1998-11-10 | Fluoroware, Inc. | Tacky film frame for electronic device |
US6071795A (en) | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
JP2000049382A (ja) | 1998-07-27 | 2000-02-18 | Matsushita Electron Corp | 半導体発光装置及びその製造方法 |
EP0977277A1 (en) * | 1998-07-28 | 2000-02-02 | Interuniversitair Microelektronica Centrum Vzw | Devices for emitting radiation with a high efficiency and a method for fabricating such devices |
US6504180B1 (en) * | 1998-07-28 | 2003-01-07 | Imec Vzw And Vrije Universiteit | Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom |
US7253445B2 (en) | 1998-07-28 | 2007-08-07 | Paul Heremans | High-efficiency radiating device |
JP5019664B2 (ja) | 1998-07-28 | 2012-09-05 | アイメック | 高効率で光を発するデバイスおよびそのようなデバイスの製造方法 |
US6876003B1 (en) | 1999-04-15 | 2005-04-05 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device |
DE19922176C2 (de) | 1999-05-12 | 2001-11-15 | Osram Opto Semiconductors Gmbh | Oberflächenmontierte LED-Mehrfachanordnung und deren Verwendung in einer Beleuchtungseinrichtung |
EP1119878B1 (en) | 1999-07-09 | 2007-10-24 | Osram Opto Semiconductors GmbH & Co. OHG | Encapsulation of a device |
DE19947030A1 (de) | 1999-09-30 | 2001-04-19 | Osram Opto Semiconductors Gmbh | Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung |
JP2001168344A (ja) | 1999-12-13 | 2001-06-22 | Sony Corp | 薄膜トランジスタ及びその製造方法と加熱装置並びに表示装置 |
DE10017336C2 (de) | 2000-04-07 | 2002-05-16 | Vishay Semiconductor Gmbh | verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern |
DE10020464A1 (de) * | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis |
JP2003532298A (ja) | 2000-04-26 | 2003-10-28 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 発光半導体素子 |
DE10051465A1 (de) * | 2000-10-17 | 2002-05-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis |
TWI292227B (en) | 2000-05-26 | 2008-01-01 | Osram Opto Semiconductors Gmbh | Light-emitting-dioed-chip with a light-emitting-epitaxy-layer-series based on gan |
TW472400B (en) * | 2000-06-23 | 2002-01-11 | United Epitaxy Co Ltd | Method for roughing semiconductor device surface to increase the external quantum efficiency |
WO2002009192A1 (en) | 2000-07-24 | 2002-01-31 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device, liquid crystal display device, el display device, semiconductor film producing method, and semiconductor device producing method |
DE10040448A1 (de) | 2000-08-18 | 2002-03-07 | Osram Opto Semiconductors Gmbh | Halbleiterchip und Verfahren zu dessen Herstellung |
JP2002063985A (ja) | 2000-08-22 | 2002-02-28 | Nec Corp | 有機エレクトロルミネッセンス素子 |
US6562648B1 (en) | 2000-08-23 | 2003-05-13 | Xerox Corporation | Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials |
DE10041328B4 (de) | 2000-08-23 | 2018-04-05 | Osram Opto Semiconductors Gmbh | Verpackungseinheit für Halbleiterchips |
US6614103B1 (en) | 2000-09-01 | 2003-09-02 | General Electric Company | Plastic packaging of LED arrays |
DE10051159C2 (de) | 2000-10-16 | 2002-09-19 | Osram Opto Semiconductors Gmbh | LED-Modul, z.B. Weißlichtquelle |
JP3829245B2 (ja) | 2000-11-09 | 2006-10-04 | 日本軽金属株式会社 | ディスペンサー洗浄用アダプター |
JP4461616B2 (ja) | 2000-12-14 | 2010-05-12 | ソニー株式会社 | 素子の転写方法、素子保持基板の形成方法、及び素子保持基板 |
JP2002339952A (ja) | 2001-05-16 | 2002-11-27 | Sankyo Seiki Mfg Co Ltd | オイル動圧軸受装置およびその製造方法 |
US6562468B2 (en) * | 2001-08-08 | 2003-05-13 | Baron Industries, Cor. | Method of eliminating and a laminate which eliminates aesthetically unacceptable hues visible through light-colored translucent overlays |
JP4180576B2 (ja) | 2001-08-09 | 2008-11-12 | 松下電器産業株式会社 | Led照明装置およびカード型led照明光源 |
JP3989794B2 (ja) | 2001-08-09 | 2007-10-10 | 松下電器産業株式会社 | Led照明装置およびled照明光源 |
TW567619B (en) | 2001-08-09 | 2003-12-21 | Matsushita Electric Ind Co Ltd | LED lighting apparatus and card-type LED light source |
JP2003131137A (ja) | 2001-10-24 | 2003-05-08 | Tochigi Nikon Corp | テラヘルツ光供給光学系、テラヘルツ光検出光学系、及びこれを用いたテラヘルツ光装置 |
JP3900893B2 (ja) | 2001-11-02 | 2007-04-04 | ソニー株式会社 | 操舵装置、ドライバー認証方法、自動車 |
DE20220258U1 (de) | 2002-09-20 | 2004-02-19 | Osram Opto Semiconductors Gmbh | Halbleiterchip |
TWI226139B (en) | 2002-01-31 | 2005-01-01 | Osram Opto Semiconductors Gmbh | Method to manufacture a semiconductor-component |
DE10303977A1 (de) | 2002-01-31 | 2003-11-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements |
JP3776824B2 (ja) * | 2002-04-05 | 2006-05-17 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
JP2004047975A (ja) | 2002-05-17 | 2004-02-12 | Semiconductor Energy Lab Co Ltd | 積層体の転写方法及び半導体装置の作製方法 |
DE60325669D1 (de) | 2002-05-17 | 2009-02-26 | Semiconductor Energy Lab | Verfahren zum Transferieren eines Objekts und Verfahren zur Herstellung eines Halbleiterbauelements |
EP1536487A4 (en) | 2002-05-28 | 2008-02-06 | Matsushita Electric Works Ltd | LIGHT EMISSION ELEMENT, LIGHT EMITTING DEVICE AND THIS USE SURFACE EMISSION LIGHTING DEVICE |
JP2003347524A (ja) | 2002-05-28 | 2003-12-05 | Sony Corp | 素子の転写方法、素子の配列方法及び画像表示装置の製造方法 |
JP2004047691A (ja) | 2002-07-11 | 2004-02-12 | Seiko Epson Corp | 半導体装置の製造方法、電気光学装置、及び電子機器 |
DE10234978A1 (de) | 2002-07-31 | 2004-02-12 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung |
WO2004017407A1 (de) | 2002-07-31 | 2004-02-26 | Osram Opto Semiconductors Gmbh | Oberflächenmontierbares halbleiterbauelement und verfahren zu dessen herstellung |
US7078737B2 (en) | 2002-09-02 | 2006-07-18 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device |
TWI313062B (en) | 2002-09-13 | 2009-08-01 | Ind Tech Res Inst | Method for producing active plastic panel displayers |
DE10245631B4 (de) | 2002-09-30 | 2022-01-20 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterbauelement |
DE10245628A1 (de) | 2002-09-30 | 2004-04-15 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung |
US20040068572A1 (en) | 2002-10-04 | 2004-04-08 | Zhixue Wu | Methods and systems for communicating over a client-server network |
JP4097510B2 (ja) | 2002-11-20 | 2008-06-11 | 株式会社沖データ | 半導体装置の製造方法 |
JP4472314B2 (ja) | 2002-11-22 | 2010-06-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、表示装置の作製方法、および発光装置の作製方法 |
US20040099926A1 (en) | 2002-11-22 | 2004-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same |
DE20220025U1 (de) | 2002-12-20 | 2003-04-10 | Skywalk Gmbh & Co Kg | Eigenstabiler Kite |
EP2894678A1 (de) | 2003-01-31 | 2015-07-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements |
US6786390B2 (en) | 2003-02-04 | 2004-09-07 | United Epitaxy Company Ltd. | LED stack manufacturing method and its structure thereof |
US6903381B2 (en) | 2003-04-24 | 2005-06-07 | Opto Tech Corporation | Light-emitting diode with cavity containing a filler |
TWI330413B (en) | 2005-01-25 | 2010-09-11 | Epistar Corp | A light-emitting device |
US20050033638A1 (en) | 2003-08-08 | 2005-02-10 | Toni-Diane Donnet | System and method for advertising compliance |
DE10339985B4 (de) * | 2003-08-29 | 2008-12-04 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung |
ATE473236T1 (de) | 2003-10-07 | 2010-07-15 | Michel Thiry | Antigene von piscirickettsia salmonis und deren verwendung |
DE10353679A1 (de) | 2003-11-17 | 2005-06-02 | Siemens Ag | Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module |
US7341882B2 (en) | 2003-11-18 | 2008-03-11 | Uni Light Technology Inc. | Method for forming an opto-electronic device |
US20050116235A1 (en) | 2003-12-02 | 2005-06-02 | Schultz John C. | Illumination assembly |
JP4496774B2 (ja) | 2003-12-22 | 2010-07-07 | 日亜化学工業株式会社 | 半導体装置の製造方法 |
JP4368225B2 (ja) | 2004-03-10 | 2009-11-18 | 三洋電機株式会社 | 窒化物系半導体発光素子の製造方法 |
US7427782B2 (en) * | 2004-03-29 | 2008-09-23 | Articulated Technologies, Llc | Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices |
KR100880812B1 (ko) | 2004-03-29 | 2009-01-30 | 아티큘레이티드 테크놀러지스 엘엘씨 | 롤-투-롤 제조된 광 시트 및 캡슐화된 반도체 회로디바이스들 |
EP1735149A2 (de) | 2004-04-16 | 2006-12-27 | Lucea AG | Lichtemittierendes paneel und optisch wirksame folie |
US7781789B2 (en) * | 2006-11-15 | 2010-08-24 | The Regents Of The University Of California | Transparent mirrorless light emitting diode |
US6956246B1 (en) | 2004-06-03 | 2005-10-18 | Lumileds Lighting U.S., Llc | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
US20050274971A1 (en) | 2004-06-10 | 2005-12-15 | Pai-Hsiang Wang | Light emitting diode and method of making the same |
DE102005013894B4 (de) | 2004-06-30 | 2010-06-17 | Osram Opto Semiconductors Gmbh | Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung |
EP1774599B1 (de) | 2004-07-30 | 2015-11-04 | OSRAM Opto Semiconductors GmbH | Verfahren zur herstellung von halbleiterchips in dünnfilmtechnik und halbleiterchip in dünnfilmtechnik |
DE102004036962A1 (de) | 2004-07-30 | 2006-03-23 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips in Dünnfilmtechnik und Halbleiterchip in Dünnfilmtechnik |
KR100616600B1 (ko) | 2004-08-24 | 2006-08-28 | 삼성전기주식회사 | 수직구조 질화물 반도체 발광소자 |
JP4254669B2 (ja) | 2004-09-07 | 2009-04-15 | 豊田合成株式会社 | 発光装置 |
US7476910B2 (en) * | 2004-09-10 | 2009-01-13 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and method for manufacturing the same |
DE102004050371A1 (de) | 2004-09-30 | 2006-04-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung |
US7256483B2 (en) | 2004-10-28 | 2007-08-14 | Philips Lumileds Lighting Company, Llc | Package-integrated thin film LED |
JP2006128512A (ja) | 2004-10-29 | 2006-05-18 | Ngk Spark Plug Co Ltd | 発光素子用セラミック基板 |
US7303315B2 (en) | 2004-11-05 | 2007-12-04 | 3M Innovative Properties Company | Illumination assembly using circuitized strips |
JP4906256B2 (ja) | 2004-11-10 | 2012-03-28 | 株式会社沖データ | 半導体複合装置の製造方法 |
JP2006147787A (ja) | 2004-11-18 | 2006-06-08 | Sony Corp | 発光素子及びその製造方法 |
JP2006147889A (ja) | 2004-11-19 | 2006-06-08 | Stanley Electric Co Ltd | 表面実装型led |
KR100638666B1 (ko) * | 2005-01-03 | 2006-10-30 | 삼성전기주식회사 | 질화물 반도체 발광소자 |
JP5328159B2 (ja) | 2005-03-01 | 2013-10-30 | セルカコア・ラボラトリーズ・インコーポレーテッド | 多波長センサ発光体 |
US8622578B2 (en) | 2005-03-30 | 2014-01-07 | Koninklijke Philips N.V. | Flexible LED array |
US20060237735A1 (en) * | 2005-04-22 | 2006-10-26 | Jean-Yves Naulin | High-efficiency light extraction structures and methods for solid-state lighting |
WO2006132013A1 (ja) * | 2005-06-09 | 2006-12-14 | Rohm Co., Ltd | 半導体発光素子 |
KR100599012B1 (ko) | 2005-06-29 | 2006-07-12 | 서울옵토디바이스주식회사 | 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법 |
DE102005055293A1 (de) | 2005-08-05 | 2007-02-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip |
US20070053179A1 (en) | 2005-09-08 | 2007-03-08 | Pang Slew I | Low profile light source utilizing a flexible circuit carrier |
US7806574B2 (en) | 2006-04-16 | 2010-10-05 | Albeo Technologies, Inc. | Thermal management of LED-based lighting systems |
JP2008028352A (ja) | 2006-06-02 | 2008-02-07 | Nec Lighting Ltd | 電子機器および電子機器の製造方法 |
DE102007004301A1 (de) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements und Dünnfilm-Halbleiterbauelement |
DE102007004303A1 (de) | 2006-08-04 | 2008-02-07 | Osram Opto Semiconductors Gmbh | Dünnfilm-Halbleiterbauelement und Bauelement-Verbund |
DE102007004304A1 (de) | 2007-01-29 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips |
-
2007
- 2007-01-29 DE DE102007004304A patent/DE102007004304A1/de not_active Withdrawn
-
2008
- 2008-01-18 TW TW097101979A patent/TWI396299B/zh not_active IP Right Cessation
- 2008-01-22 CN CN2008800034763A patent/CN101601143B/zh active Active
- 2008-01-22 WO PCT/EP2008/050716 patent/WO2008092774A1/de active Application Filing
- 2008-01-22 KR KR1020097017989A patent/KR20090111861A/ko active Search and Examination
- 2008-01-22 US US12/525,066 patent/US9142720B2/en active Active
- 2008-01-22 EP EP08708081.8A patent/EP2132791B1/de active Active
Also Published As
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EP2132791B1 (de) | 2016-07-20 |
US20100072500A1 (en) | 2010-03-25 |
TWI396299B (zh) | 2013-05-11 |
CN101601143B (zh) | 2013-12-25 |
CN101601143A (zh) | 2009-12-09 |
DE102007004304A1 (de) | 2008-07-31 |
WO2008092774A1 (de) | 2008-08-07 |
US9142720B2 (en) | 2015-09-22 |
TW200847487A (en) | 2008-12-01 |
EP2132791A1 (de) | 2009-12-16 |
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