KR20080108047A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

Info

Publication number
KR20080108047A
KR20080108047A KR1020080053282A KR20080053282A KR20080108047A KR 20080108047 A KR20080108047 A KR 20080108047A KR 1020080053282 A KR1020080053282 A KR 1020080053282A KR 20080053282 A KR20080053282 A KR 20080053282A KR 20080108047 A KR20080108047 A KR 20080108047A
Authority
KR
South Korea
Prior art keywords
film
pair
structures
semiconductor
fibers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020080053282A
Other languages
English (en)
Korean (ko)
Inventor
오타니 히사시
스기야마 에이지
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20080108047A publication Critical patent/KR20080108047A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020080053282A 2007-06-07 2008-06-05 반도체 장치 Ceased KR20080108047A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00151168 2007-06-07
JP2007151168 2007-06-07

Publications (1)

Publication Number Publication Date
KR20080108047A true KR20080108047A (ko) 2008-12-11

Family

ID=39766836

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080053282A Ceased KR20080108047A (ko) 2007-06-07 2008-06-05 반도체 장치

Country Status (4)

Country Link
US (1) US7906847B2 (cg-RX-API-DMAC7.html)
EP (1) EP2001047A1 (cg-RX-API-DMAC7.html)
JP (4) JP2009016808A (cg-RX-API-DMAC7.html)
KR (1) KR20080108047A (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8847246B2 (en) 2010-05-28 2014-09-30 Samsung Display Co., Ltd. Organic light emitting diode display
KR20150004679A (ko) * 2013-07-03 2015-01-13 삼성디스플레이 주식회사 표시 장치
US9496494B2 (en) 2012-12-04 2016-11-15 Samsung Electronics Co., Ltd. Resistive random access memory devices formed on fiber and methods of manufacturing the same

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009031482A1 (en) 2007-09-07 2009-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5460108B2 (ja) 2008-04-18 2014-04-02 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
KR101596698B1 (ko) * 2008-04-25 2016-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
KR20090114171A (ko) * 2008-04-29 2009-11-03 삼성전자주식회사 표시 장치
KR101582503B1 (ko) 2008-05-12 2016-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2009142310A1 (en) * 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101549530B1 (ko) * 2008-05-23 2015-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP5248412B2 (ja) * 2008-06-06 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR20110027760A (ko) * 2008-06-06 2011-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US8053253B2 (en) * 2008-06-06 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5473413B2 (ja) * 2008-06-20 2014-04-16 株式会社半導体エネルギー研究所 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法
JP2010041040A (ja) * 2008-07-10 2010-02-18 Semiconductor Energy Lab Co Ltd 光電変換装置および光電変換装置の製造方法
TWI475282B (zh) * 2008-07-10 2015-03-01 Semiconductor Energy Lab 液晶顯示裝置和其製造方法
WO2010005064A1 (en) 2008-07-10 2010-01-14 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic device
JP5216716B2 (ja) 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
WO2010032602A1 (en) 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN102160179B (zh) * 2008-09-19 2014-05-14 株式会社半导体能源研究所 半导体装置及其制造方法
WO2010035625A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semi conductor device
WO2010038599A1 (en) 2008-10-01 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8922435B2 (en) 2009-04-27 2014-12-30 Drexel University Transparent conformal polymer antennas for RFID and other wireless communications applications
CN102460722B (zh) * 2009-06-05 2015-04-01 株式会社半导体能源研究所 光电转换装置及其制造方法
KR101677076B1 (ko) * 2009-06-05 2016-11-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 디바이스 및 그 제조 방법
KR101732397B1 (ko) * 2009-06-05 2017-05-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 장치 및 그의 제작 방법
TW201110802A (en) * 2009-06-24 2011-03-16 Seiko Epson Corp Electro-optical device, electronic device, and illumination apparatus
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
US8345435B2 (en) * 2009-08-07 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Terminal structure and manufacturing method thereof, and electronic device and manufacturing method thereof
TWI517268B (zh) * 2009-08-07 2016-01-11 半導體能源研究所股份有限公司 端子構造的製造方法和電子裝置的製造方法
KR102113064B1 (ko) 2009-09-16 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 이의 제조 방법
JP5719560B2 (ja) * 2009-10-21 2015-05-20 株式会社半導体エネルギー研究所 端子構造の作製方法
KR101617280B1 (ko) 2009-10-21 2016-05-03 엘지디스플레이 주식회사 플라스틱 기판을 이용한 표시장치 제조 방법
KR101798487B1 (ko) * 2010-06-01 2017-11-17 삼성디스플레이 주식회사 표시 장치
KR101201720B1 (ko) 2010-07-29 2012-11-15 삼성디스플레이 주식회사 표시 장치 및 유기 발광 표시 장치
WO2013058749A1 (en) * 2011-10-19 2013-04-25 Hewlett-Packard Development Company, L.P. Material including signal passing and signal blocking strands
WO2013108311A1 (ja) * 2012-01-16 2013-07-25 Ｎｅｃカシオモバイルコミュニケーションズ株式会社 携帯端末装置
US8940618B2 (en) * 2012-03-13 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Method and device for cutting semiconductor wafers
WO2014030744A1 (ja) 2012-08-24 2014-02-27 デクセリアルズ株式会社 異方性導電フィルム及びその製造方法
KR102018558B1 (ko) 2012-08-24 2019-09-05 데쿠세리아루즈 가부시키가이샤 이방성 도전 필름의 제조 방법 및 이방성 도전 필름
CN104903947B (zh) * 2012-12-17 2018-03-20 司隆科技有限公司 用于柔性显示器的平坦化纤维基板的制造方法
US8688592B1 (en) * 2013-01-08 2014-04-01 Michael T. Abramson System and method for processing transactions
JP2014209564A (ja) * 2013-03-28 2014-11-06 日東電工株式会社 熱硬化性封止用シート、及び、セパレータ付き熱硬化性封止用シート
US20150069133A1 (en) * 2013-09-09 2015-03-12 Zhengfang Qian Nanotube patterns for chipless rfid tags and methods of making the same
WO2016033557A2 (en) * 2014-08-29 2016-03-03 University Of Virginia Quasi-vertical diode with integrated ohmic contact base and related method thereof
JP6463662B2 (ja) * 2015-10-06 2019-02-06 信越化学工業株式会社 半導体封止用基材付封止材、半導体封止用基材付封止材の製造方法、及び半導体装置の製造方法
JP2017147537A (ja) * 2016-02-16 2017-08-24 レノボ・シンガポール・プライベート・リミテッド 電子機器および電子機器用筐体
JP6686540B2 (ja) * 2016-03-04 2020-04-22 三菱瓦斯化学株式会社 プリント配線基板
EP3482420B1 (en) * 2016-07-08 2024-09-04 BOE Technology Group Co., Ltd. Thin film transistor, gate drive on array and display apparatus having the same, and fabricating method thereof
US11509068B2 (en) * 2018-08-24 2022-11-22 Kyocera Corporation Structure, antenna, wireless communication module, and wireless communication device
US10796976B2 (en) * 2018-10-31 2020-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
TWI827809B (zh) * 2019-04-04 2024-01-01 丹麥商卡普雷斯股份有限公司 測量測試樣本之電性的方法，以及多層測試樣本
JP2021132208A (ja) * 2020-02-19 2021-09-09 東レ株式会社 半導体装置およびその製造方法、ならびに無線通信装置

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1990008802A1 (fr) 1989-01-25 1990-08-09 Asahi Kasei Kogyo Kabushiki Kaisha Nouveaux materiaux composites constitues de preimpregnes et de produits moules composites, et production de produits moules composites
DE3907757A1 (de) 1989-03-10 1990-09-13 Mtu Muenchen Gmbh Schutzfolie
JPH05190999A (ja) * 1992-01-08 1993-07-30 Ibiden Co Ltd Ｉｃカード用プリント配線板
JPH05190582A (ja) 1992-01-08 1993-07-30 Oki Electric Ind Co Ltd 樹脂封止半導体装置及びその製造方法
JPH0794744A (ja) * 1993-09-20 1995-04-07 Hitachi Ltd Ｍｉｓトランジスタ
DE69517747T2 (de) 1994-05-11 2000-11-09 Thomson Consumer Electronics, Inc. Schaltung zur Korrektur der Konvergenz
TW371285B (en) * 1994-09-19 1999-10-01 Amp Akzo Linlam Vof Foiled UD-prepreg and PWB laminate prepared therefrom
JP3364081B2 (ja) 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5757456A (en) 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
JP3406727B2 (ja) 1995-03-10 2003-05-12 株式会社半導体エネルギー研究所 表示装置
JP3256110B2 (ja) * 1995-09-28 2002-02-12 シャープ株式会社 液晶表示装置
JPH1092980A (ja) 1996-09-13 1998-04-10 Toshiba Corp 無線カードおよびその製造方法
US5930139A (en) 1996-11-13 1999-07-27 Kimberly-Clark Worldwide, Inc. Process and apparatus for registration control of material printed at machine product length
JPH10338809A (ja) * 1997-04-08 1998-12-22 Sumitomo Chem Co Ltd 低誘電率樹脂とパラ配向芳香族ポリアミドとからなる複合フィルム、そのプリプレグおよびそれらの用途
JPH11214700A (ja) * 1998-01-23 1999-08-06 Semiconductor Energy Lab Co Ltd 半導体表示装置
JPH11317475A (ja) 1998-02-27 1999-11-16 Canon Inc 半導体用封止材樹脂および半導体素子
TW484101B (en) 1998-12-17 2002-04-21 Hitachi Ltd Semiconductor device and its manufacturing method
JP3160586B2 (ja) * 1999-04-27 2001-04-25 松下電子工業株式会社 Ｃｍｏｓインバータ及びそれを用いたスタンダードセル
US6224965B1 (en) 1999-06-25 2001-05-01 Honeywell International Inc. Microfiber dielectrics which facilitate laser via drilling
JP4423779B2 (ja) 1999-10-13 2010-03-03 味の素株式会社 エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法
US8415208B2 (en) 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100430001B1 (ko) 2001-12-18 2004-05-03 엘지전자 주식회사 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법
JP4137460B2 (ja) * 2002-02-08 2008-08-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3949599B2 (ja) * 2002-03-22 2007-07-25 株式会社半導体エネルギー研究所 半導体記憶装置
JP4526772B2 (ja) * 2002-03-26 2010-08-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
US7485489B2 (en) 2002-06-19 2009-02-03 Bjoersell Sten Electronics circuit manufacture
AU2003253227A1 (en) 2002-06-19 2004-01-06 Sten Bjorsell Electronics circuit manufacture
US7132311B2 (en) * 2002-07-26 2006-11-07 Intel Corporation Encapsulation of a stack of semiconductor dice
US7473967B2 (en) * 2003-05-30 2009-01-06 Panasonic Corporation Strained channel finFET device
JP4828088B2 (ja) 2003-06-05 2011-11-30 凸版印刷株式会社 Ｉｃタグ
EP1589797A3 (en) 2004-04-19 2008-07-30 Matsushita Electric Industrial Co., Ltd. Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein
JP2005327900A (ja) * 2004-05-14 2005-11-24 Sanyo Electric Co Ltd 半導体装置
US7161199B2 (en) * 2004-08-24 2007-01-09 Freescale Semiconductor, Inc. Transistor structure with stress modification and capacitive reduction feature in a width direction and method thereof
JP5072208B2 (ja) * 2004-09-24 2012-11-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2006090445A1 (ja) * 2005-02-23 2006-08-31 Fujitsu Limited 半導体回路装置及びその半導体回路装置の製造方法
US7727859B2 (en) * 2005-06-30 2010-06-01 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
JP2007059821A (ja) 2005-08-26 2007-03-08 Shinko Electric Ind Co Ltd 配線基板の製造方法
TWI431726B (zh) 2006-06-01 2014-03-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
WO2008001703A1 (en) 2006-06-26 2008-01-03 Semiconductor Energy Laboratory Co., Ltd. Paper including semiconductor device and manufacturing method thereof
EP1970951A3 (en) * 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8847246B2 (en) 2010-05-28 2014-09-30 Samsung Display Co., Ltd. Organic light emitting diode display
US9496494B2 (en) 2012-12-04 2016-11-15 Samsung Electronics Co., Ltd. Resistive random access memory devices formed on fiber and methods of manufacturing the same
KR20150004679A (ko) * 2013-07-03 2015-01-13 삼성디스플레이 주식회사 표시 장치

Also Published As

Publication number Publication date
JP2009016808A (ja) 2009-01-22
EP2001047A1 (en) 2008-12-10
JP5770325B2 (ja) 2015-08-26
JP2014160826A (ja) 2014-09-04
US7906847B2 (en) 2011-03-15
US20080303140A1 (en) 2008-12-11
JP2015207785A (ja) 2015-11-19
JP2012212917A (ja) 2012-11-01

Similar Documents

Publication Publication Date Title
JP5770325B2 (ja) 半導体装置
JP5189429B2 (ja) 半導体装置及びその作製方法
KR101389758B1 (ko) 반도체 장치의 제작 방법
US7968427B2 (en) Manufacturing method of semiconductor device
CN102156901B (zh) 包括半导体器件的纸及具有该纸的物品
CN101803008B (zh) 半导体装置及其制造方法
US8558370B2 (en) Semiconductor device with antenna
US7759788B2 (en) Semiconductor device
KR20080087693A (ko) 반도체 장치의 제작 방법

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20080605

PG1501 Laying open of application
A201 Request for examination
AMND Amendment
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20130424

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20080605

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20150227

Patent event code: PE09021S01D

AMND Amendment
E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20150826

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20150227

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I

PJ0201 Trial against decision of rejection

Patent event date: 20150930

Comment text: Request for Trial against Decision on Refusal

Patent event code: PJ02012R01D

Patent event date: 20150826

Comment text: Decision to Refuse Application

Patent event code: PJ02011S01I

Appeal kind category: Appeal against decision to decline refusal

Decision date: 20160825

Appeal identifier: 2015101005740

Request date: 20150930

AMND Amendment
PB0901 Examination by re-examination before a trial

Comment text: Amendment to Specification, etc.

Patent event date: 20151023

Patent event code: PB09011R02I

Comment text: Request for Trial against Decision on Refusal

Patent event date: 20150930

Patent event code: PB09011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20150427

Patent event code: PB09011R02I

Comment text: Amendment to Specification, etc.

Patent event date: 20130424

Patent event code: PB09011R02I

E801 Decision on dismissal of amendment
PE0801 Dismissal of amendment

Patent event code: PE08012E01D

Comment text: Decision on Dismissal of Amendment

Patent event date: 20151112

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20151023

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20150427

Patent event code: PE08011R01I

Comment text: Amendment to Specification, etc.

Patent event date: 20130424

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial
J301 Trial decision

Free format text: TRIAL NUMBER: 2015101005740; TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20150930

Effective date: 20160825

PJ1301 Trial decision

Patent event code: PJ13011S01D

Patent event date: 20160825

Comment text: Trial Decision on Objection to Decision on Refusal

Appeal kind category: Appeal against decision to decline refusal

Request date: 20150930

Decision date: 20160825

Appeal identifier: 2015101005740