KR20080105368A - 전도성이 개선된 카본나노튜브, 그의 제조방법 및 상기카본나노튜브를 함유하는 전극 - Google Patents
전도성이 개선된 카본나노튜브, 그의 제조방법 및 상기카본나노튜브를 함유하는 전극 Download PDFInfo
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- KR20080105368A KR20080105368A KR1020070052868A KR20070052868A KR20080105368A KR 20080105368 A KR20080105368 A KR 20080105368A KR 1020070052868 A KR1020070052868 A KR 1020070052868A KR 20070052868 A KR20070052868 A KR 20070052868A KR 20080105368 A KR20080105368 A KR 20080105368A
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- carbon nanotubes
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 141
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 137
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 134
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000007800 oxidant agent Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 32
- 239000003960 organic solvent Substances 0.000 claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 230000001590 oxidative effect Effects 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 34
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 29
- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 claims description 28
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 claims description 16
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 15
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000002834 transmittance Methods 0.000 claims description 13
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 claims description 10
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims description 9
- 239000006185 dispersion Substances 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- JQJPBYFTQAANLE-UHFFFAOYSA-N Butyl nitrite Chemical compound CCCCON=O JQJPBYFTQAANLE-UHFFFAOYSA-N 0.000 claims description 5
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 5
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 150000004057 1,4-benzoquinones Chemical class 0.000 claims description 4
- 229910052811 halogen oxide Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910001507 metal halide Inorganic materials 0.000 claims description 4
- 150000005309 metal halides Chemical class 0.000 claims description 4
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical class S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052815 sulfur oxide Inorganic materials 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical class O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 239000002270 dispersing agent Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims 1
- LYGJENNIWJXYER-BJUDXGSMSA-N nitromethane Chemical group [11CH3][N+]([O-])=O LYGJENNIWJXYER-BJUDXGSMSA-N 0.000 claims 1
- 239000000843 powder Substances 0.000 abstract description 12
- 239000000243 solution Substances 0.000 description 29
- 239000002109 single walled nanotube Substances 0.000 description 22
- 230000000052 comparative effect Effects 0.000 description 19
- HZNVUJQVZSTENZ-UHFFFAOYSA-N 2,3-dichloro-5,6-dicyano-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(C#N)=C(C#N)C1=O HZNVUJQVZSTENZ-UHFFFAOYSA-N 0.000 description 14
- 239000002904 solvent Substances 0.000 description 13
- NKLCNNUWBJBICK-UHFFFAOYSA-N dess–martin periodinane Chemical compound C1=CC=C2I(OC(=O)C)(OC(C)=O)(OC(C)=O)OC(=O)C2=C1 NKLCNNUWBJBICK-UHFFFAOYSA-N 0.000 description 10
- 239000002238 carbon nanotube film Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 229910003771 Gold(I) chloride Inorganic materials 0.000 description 7
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 7
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- -1 NH (CF 3 SO 3 H) Inorganic materials 0.000 description 6
- 239000002048 multi walled nanotube Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000012153 distilled water Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910021404 metallic carbon Inorganic materials 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910000667 (NH4)2Ce(NO3)6 Inorganic materials 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 description 1
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- RBWNDBNSJFCLBZ-UHFFFAOYSA-N 7-methyl-5,6,7,8-tetrahydro-3h-[1]benzothiolo[2,3-d]pyrimidine-4-thione Chemical compound N1=CNC(=S)C2=C1SC1=C2CCC(C)C1 RBWNDBNSJFCLBZ-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 101710134784 Agnoprotein Proteins 0.000 description 1
- STVZVOQTLXRICS-UHFFFAOYSA-N C[N+]([O-])=O.O[N+]([O-])=O Chemical compound C[N+]([O-])=O.O[N+]([O-])=O STVZVOQTLXRICS-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012769 display material Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- BDOLQESNFGCNSC-UHFFFAOYSA-N iodylbenzene Chemical compound O=I(=O)C1=CC=CC=C1 BDOLQESNFGCNSC-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010907 mechanical stirring Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- WCZAXBXVDLKQGV-UHFFFAOYSA-N n,n-dimethyl-2-(7-oxobenzo[c]fluoren-5-yl)oxyethanamine oxide Chemical compound C12=CC=CC=C2C(OCC[N+](C)([O-])C)=CC2=C1C1=CC=CC=C1C2=O WCZAXBXVDLKQGV-UHFFFAOYSA-N 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- KIOCVGZCTSCENI-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O.C[N+]([O-])=O KIOCVGZCTSCENI-UHFFFAOYSA-N 0.000 description 1
- BMNDJWSIKZECMH-UHFFFAOYSA-N nitrosyl bromide Chemical compound BrN=O BMNDJWSIKZECMH-UHFFFAOYSA-N 0.000 description 1
- VPCDQGACGWYTMC-UHFFFAOYSA-N nitrosyl chloride Chemical compound ClN=O VPCDQGACGWYTMC-UHFFFAOYSA-N 0.000 description 1
- 235000019392 nitrosyl chloride Nutrition 0.000 description 1
- ZEIYBPGWHWECHV-UHFFFAOYSA-N nitrosyl fluoride Chemical compound FN=O ZEIYBPGWHWECHV-UHFFFAOYSA-N 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- FIYYMXYOBLWYQO-UHFFFAOYSA-N ortho-iodylbenzoic acid Chemical compound OC(=O)C1=CC=CC=C1I(=O)=O FIYYMXYOBLWYQO-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- SDLBJIZEEMKQKY-UHFFFAOYSA-M silver chlorate Chemical compound [Ag+].[O-]Cl(=O)=O SDLBJIZEEMKQKY-UHFFFAOYSA-M 0.000 description 1
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 1
- 229960002218 sodium chlorite Drugs 0.000 description 1
- BAZAXWOYCMUHIX-UHFFFAOYSA-M sodium perchlorate Chemical compound [Na+].[O-]Cl(=O)(=O)=O BAZAXWOYCMUHIX-UHFFFAOYSA-M 0.000 description 1
- 229910001488 sodium perchlorate Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
- H10K85/225—Carbon nanotubes comprising substituents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
Description
구분 | 산화제 | 유기용매 | 면저항 (ohm/sq.) |
실시예 1 | NaClO2 | N-메틸피롤리돈 | 8.71 |
실시예 2 | NaClO3 | N-메틸피롤리돈 | 5.17 |
실시예 3 | NaClO4 | N-메틸피롤리돈 | 3.06 |
실시예 4 | AgClO4 | N-메틸피롤리돈 | 7.67 |
실시예 5 | NaNO2 | N-메틸피롤리돈 | 5.70 |
실시예 6 | Oxone | N-메틸피롤리돈 | 9.20 |
실시예 7 | DDQ | N-메틸피롤리돈 | 4.69 |
실시예 8 | DDQ | 니트로메탄 | 3.62 |
실시예 9 | AuCl3 | N-메틸피롤리돈 | 3.66 |
실시예 10 | AuCl3 | 니트로메탄 | 1.76 |
실시예 11 | NS | N-메틸피롤리돈 | 4.03 |
실시예 12 | NS | 니트로메탄 | 1.40 |
실시예 13 | Dess-Martin periodinane | N-메틸피롤리돈 | 6.96 |
실시예 14 | Dess-Martin periodinane | 니트로메탄 | 3.79 |
비교예 1 | - | N-메틸피롤리돈 | 10.5 |
비교예 2 | NaNO2 | 증류수 | 49.56 |
비교예 3 | Oxone | 증류수 | 134.00 |
구분 | 산화제 | 유기용매 | 면저항 (ohm/sq.) | 감소분 | |
도핑처리 전 | 도핑처리 후 | ||||
실시예 15 | 니트로메탄 | - | 1299.4 | 642.9 | 50.5% |
실시예 16 | NS | 니트로메탄 | 1605.4 | 374.6 | 76.7% |
실시예 17 | AuCl3 | 니트로메탄 | 1849.0 | 274.1 | 85.2% |
실시예 18 | 질산 | 니트로메탄 | 1201.8 | 322.6 | 73.2% |
구분 | 산화제 | 유기용매 | 분산용매 | 면저항 (ohm/sq.) |
실시예 19 | NS | 니트로메탄 | DCE | 347.37 |
실시예 20 | NS | 니트로메탄 | ODCB | 442.50 |
실시예 21 | NS | 니트로메탄 | 니트로메탄 | 326.87 |
비교예 4 | - | - | DCE | 6024.00 |
비교예 5 | - | - | ODCB | 2683.00 |
비교예 6 | - | - | 니트로메탄 | 1462.57 |
Claims (18)
- 산화제 및 유기 용매를 포함하는 산화제 용액을 형성하는 단계; 및상기 산화제 용액으로 카본나노튜브를 도핑 처리하는 단계를 포함하는 카본나노튜브의 도핑방법.
- 제1항에 있어서,상기 도핑 처리가 상기 카본나노튜브의 분말상을 상기 산화제 용액에 혼합 및 교반하는 공정을 포함하는 것을 특징으로하는 카본나노튜브의 도핑방법.
- 제1항에 있어서,상기 유기용매가 카본나노튜브를 분산시키는 분산능을 갖는 것을 특징으로 하는 카본나노튜브의 도핑방법.
- 제1항에 있어서, 상기 유기용매가 DMF, DCE, ODCB, 니트로메탄, THF, NMP, 니트로메탄, 디메틸 술폭시드, 니트로벤젠 및 부틸 니트라이트로 이루어지는 군으로부터 선택되는 하나 이상인 것을 특징으로 하는 카본나노튜브의 도핑방법.
- 제1항에 있어서,상기 산화제 용액이 분산제를 더 포함하는 것을 특징으로 하는 카본나노튜브 의 도핑방법.
- 제1항에 있어서,상기 도핑 처리가 상기 카본나노튜브로 형성된 필름을 상기 산화제 용액으로 디핑 또는 코팅하는 공정을 포함하는 것을 특징으로 하는 카본나노튜브의 도핑방법.
- 제1항에 있어서,상기 유기 용매가 산화능을 갖는 것을 특징으로 하는 카본나노튜브의 도핑방법.
- 제7항에 있어서,상기 산화능을 갖는 유기 용매가 니트로메탄, 디메틸술폭시드, 니트로벤젠 또는 부틸 니트라이트인 것을 특징으로 하는 카본나노튜브의 도핑방법.
- 제1항에 있어서,상기 산화제가 2가 이상의 산화수를 갖는 것을 특징으로 하는 카본나노튜브의 도핑방법.
- 제1항에 있어서,상기 산화제가 할로겐 산화물, 황산화물, 금속 할라이드, 질소산화물, 금속 산소산화물, 벤조퀴논계 화합물, O3 및 H2O2로 이루어지는 군으로부터 선택된 하나 혹은 둘 이상인 것을 특징으로 하는 카본나노튜브의 도핑방법.
- 제1항 내지 제10항 중 어느 한 항의 도핑방법으로 도핑 처리하여 얻어지는 도핑 카본나노튜브.
- 전도도가 103Ω/sq 이하이고, 투과도 75% 이상인 도핑 카본나노튜브 함유 필름.
- 제12항에 있어서,제1항 내지 제10항 중 어느 한 항의 도핑방법으로 도핑 처리하여 얻어지는 것임을 특징으로 하는 도핑 카본나노튜브 함유 필름.
- 제1항 내지 제10항 중 어느 한 항의 도핑방법으로 도핑처리하여 얻어지는 도핑 카본나노튜브를 포함하는 전극.
- 제14항에 따른 전극을 구비하는 표시소자.
- 제15항에 있어서,상기 표시소자가 OLED, LCD, 또는 E-페이퍼인 것을 특징으로 하는 표시소자.
- 제14항에 따른 전극을 구비하는 태양전지.
- 제1항 내지 제10항 중 어느 한 항에 따른 도핑 방법으로 도핑처리하여 얻어지는 도핑 카본나노튜브를 포함하는 박막 트랜지스터.
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KR1020070052868A KR100951730B1 (ko) | 2007-05-30 | 2007-05-30 | 전도성이 개선된 카본나노튜브, 그의 제조방법 및 상기카본나노튜브를 함유하는 전극 |
US12/043,519 US8586458B2 (en) | 2007-05-30 | 2008-03-06 | Process of preparing carbon nanotube having improved conductivity |
CN2008101078027A CN101314470B (zh) | 2007-05-30 | 2008-05-14 | 导电性提高的碳纳米管、其制备工艺及包含其的电极 |
JP2008135550A JP5399004B2 (ja) | 2007-05-30 | 2008-05-23 | 伝導性の改善されたカーボンナノチューブ、その製造方法および該カーボンナノチューブを含有する電極 |
EP08157017A EP1998385B1 (en) | 2007-05-30 | 2008-05-27 | Process of Preparing Carbon Nanotube having Improved Conductivity |
US12/899,867 US8501529B2 (en) | 2007-05-30 | 2010-10-07 | Carbon nanotube having improved conductivity, process of preparing the same, and electrode comprising the carbon nanotube |
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KR1020070052868A KR100951730B1 (ko) | 2007-05-30 | 2007-05-30 | 전도성이 개선된 카본나노튜브, 그의 제조방법 및 상기카본나노튜브를 함유하는 전극 |
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US (1) | US8586458B2 (ko) |
EP (1) | EP1998385B1 (ko) |
JP (1) | JP5399004B2 (ko) |
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- 2008-05-23 JP JP2008135550A patent/JP5399004B2/ja not_active Expired - Fee Related
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KR20190053497A (ko) | 2017-11-10 | 2019-05-20 | 연세대학교 산학협력단 | 산화물 박막 트랜지스터 및 그 제조방법 |
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CN101314470A (zh) | 2008-12-03 |
EP1998385A2 (en) | 2008-12-03 |
KR100951730B1 (ko) | 2010-04-07 |
EP1998385A3 (en) | 2010-08-18 |
EP1998385B1 (en) | 2012-06-27 |
US20080296683A1 (en) | 2008-12-04 |
JP2008297196A (ja) | 2008-12-11 |
US8586458B2 (en) | 2013-11-19 |
CN101314470B (zh) | 2013-06-26 |
JP5399004B2 (ja) | 2014-01-29 |
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