KR20080018263A - 그레이톤 마스크용 블랭크스와 이것을 사용한 그레이톤마스크 및 그 제조방법 - Google Patents

그레이톤 마스크용 블랭크스와 이것을 사용한 그레이톤마스크 및 그 제조방법 Download PDF

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Publication number
KR20080018263A
KR20080018263A KR1020087000770A KR20087000770A KR20080018263A KR 20080018263 A KR20080018263 A KR 20080018263A KR 1020087000770 A KR1020087000770 A KR 1020087000770A KR 20087000770 A KR20087000770 A KR 20087000770A KR 20080018263 A KR20080018263 A KR 20080018263A
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KR
South Korea
Prior art keywords
film
etching
light shielding
semi
gray tone
Prior art date
Application number
KR1020087000770A
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English (en)
Korean (ko)
Inventor
후미히코 야마다
도시하루 오자키
다카에이 사사키
Original Assignee
아루바쿠 세이마쿠 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아루바쿠 세이마쿠 가부시키가이샤 filed Critical 아루바쿠 세이마쿠 가부시키가이샤
Publication of KR20080018263A publication Critical patent/KR20080018263A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Liquid Crystal (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
KR1020087000770A 2005-07-15 2006-07-14 그레이톤 마스크용 블랭크스와 이것을 사용한 그레이톤마스크 및 그 제조방법 KR20080018263A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00207293 2005-07-15
JP2005207293 2005-07-15

Publications (1)

Publication Number Publication Date
KR20080018263A true KR20080018263A (ko) 2008-02-27

Family

ID=37668747

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087000770A KR20080018263A (ko) 2005-07-15 2006-07-14 그레이톤 마스크용 블랭크스와 이것을 사용한 그레이톤마스크 및 그 제조방법

Country Status (5)

Country Link
JP (1) JP4898680B2 (zh)
KR (1) KR20080018263A (zh)
CN (1) CN101061430A (zh)
TW (1) TW200715043A (zh)
WO (1) WO2007010866A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140071284A (ko) * 2011-05-27 2014-06-11 엠씨10, 인크 전자, 광학, 및/또는 기계 장치 및 시스템, 그리고 이를 제조하기 위한 방법

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5105407B2 (ja) * 2007-03-30 2012-12-26 Ｈｏｙａ株式会社 フォトマスクブランク、フォトマスク及びフォトマスクの製造方法
US8133641B2 (en) 2007-05-11 2012-03-13 Lg Innotek Co., Ltd. Half tone mask having multi-half permeation part and a method of manufacturing the same
JP4934236B2 (ja) * 2007-09-29 2012-05-16 Ｈｏｙａ株式会社 グレートーンマスクブランク、グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法
JP5531702B2 (ja) * 2010-03-23 2014-06-25 旭硝子株式会社 遮光膜付ガラス基板および液晶表示装置
CN102569038A (zh) * 2011-12-29 2012-07-11 映瑞光电科技(上海)有限公司 图形化衬底的制作方法
CN108630788A (zh) * 2018-03-15 2018-10-09 华灿光电（浙江）有限公司 一种发光二极管的芯片的修复方法
FR3081721B1 (fr) * 2018-06-01 2022-04-15 Arkema France Procede de preparation d'un sel de lithium de bis(fluorosulfonyl)imide

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52136526A (en) * 1976-05-10 1977-11-15 Akai Electric Method of forming twoocolor stripe filter
JPS5779174A (en) * 1980-11-06 1982-05-18 Konishiroku Photo Ind Co Ltd Etching solution for chromium film and chromium oxide film
JP3453435B2 (ja) * 1993-10-08 2003-10-06 大日本印刷株式会社 位相シフトマスクおよびその製造方法
JP3250973B2 (ja) * 1997-06-27 2002-01-28 ホーヤ株式会社 ハーフトーン型位相シフトマスクブランク及びハーフトーン型位相シフトマスク
JP4071849B2 (ja) * 1997-10-08 2008-04-02 アルバック成膜株式会社 ブランクス及びブラックマトリクス
JPH11223931A (ja) * 1998-02-04 1999-08-17 Hoya Corp 位相シフトマスク及び位相シフトマスクブランク
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
JP3645882B2 (ja) * 2002-03-01 2005-05-11 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクブランクの製造方法
JP4210166B2 (ja) * 2003-06-30 2009-01-14 Ｈｏｙａ株式会社 グレートーンマスクの製造方法
US7029803B2 (en) * 2003-09-05 2006-04-18 Schott Ag Attenuating phase shift mask blank and photomask
JP4385690B2 (ja) * 2003-09-09 2009-12-16 凸版印刷株式会社 液晶表示素子製造用露光マスク及びその製造方法
JP2005208660A (ja) * 2004-01-22 2005-08-04 Schott Ag 超高透過率の位相シフト型のマスクブランク

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140071284A (ko) * 2011-05-27 2014-06-11 엠씨10, 인크 전자, 광학, 및/또는 기계 장치 및 시스템, 그리고 이를 제조하기 위한 방법

Also Published As

Publication number Publication date
JP4898680B2 (ja) 2012-03-21
JPWO2007010866A1 (ja) 2009-01-29
WO2007010866A1 (ja) 2007-01-25
CN101061430A (zh) 2007-10-24
TW200715043A (en) 2007-04-16

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