KR20070116543A - 종말점 검출이 향상된 실리카 및 실리콘 니트리드를 화학적기계적 연마하기 위한 조성물 - Google Patents

종말점 검출이 향상된 실리카 및 실리콘 니트리드를 화학적기계적 연마하기 위한 조성물 Download PDF

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Publication number
KR20070116543A
KR20070116543A KR1020070052556A KR20070052556A KR20070116543A KR 20070116543 A KR20070116543 A KR 20070116543A KR 1020070052556 A KR1020070052556 A KR 1020070052556A KR 20070052556 A KR20070052556 A KR 20070052556A KR 20070116543 A KR20070116543 A KR 20070116543A
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KR
South Korea
Prior art keywords
ammonium hydroxide
polishing
carboxylic acid
ammonia
ceria
Prior art date
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Ceased
Application number
KR1020070052556A
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English (en)
Korean (ko)
Inventor
브라이언 엘. 뮬러
Original Assignee
롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
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Application filed by 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 filed Critical 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드
Publication of KR20070116543A publication Critical patent/KR20070116543A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020070052556A 2006-06-05 2007-05-30 종말점 검출이 향상된 실리카 및 실리콘 니트리드를 화학적기계적 연마하기 위한 조성물 Ceased KR20070116543A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/446,936 US7297633B1 (en) 2006-06-05 2006-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
US11/446,936 2006-06-05

Publications (1)

Publication Number Publication Date
KR20070116543A true KR20070116543A (ko) 2007-12-10

Family

ID=38650726

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070052556A Ceased KR20070116543A (ko) 2006-06-05 2007-05-30 종말점 검출이 향상된 실리카 및 실리콘 니트리드를 화학적기계적 연마하기 위한 조성물

Country Status (8)

Country Link
US (1) US7297633B1 (enExample)
JP (1) JP2007324606A (enExample)
KR (1) KR20070116543A (enExample)
CN (1) CN101085902B (enExample)
DE (1) DE102007024142A1 (enExample)
FR (1) FR2901802B1 (enExample)
SG (1) SG137837A1 (enExample)
TW (1) TW200804577A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5186707B2 (ja) * 2006-09-15 2013-04-24 日立化成株式会社 Ｃｍｐ研磨剤、ｃｍｐ研磨剤用添加液及びこれらを用いた基板の研磨方法
US20090181475A1 (en) * 2008-01-11 2009-07-16 Novellus Systems, Inc. Detecting the presence of a workpiece relative to a carrier head
WO2010036358A1 (en) 2008-09-26 2010-04-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
EP2460176A1 (de) 2009-12-18 2012-06-06 RENA GmbH Verfahren zum abtragen von substratschichten
US8671685B2 (en) * 2010-03-08 2014-03-18 Tma Power, Llc Microturbine Sun Tracker
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
KR101886464B1 (ko) * 2010-12-24 2018-08-07 히타치가세이가부시끼가이샤 연마액 및 이 연마액을 이용한 기판의 연마 방법
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
JPWO2023145572A1 (enExample) * 2022-01-28 2023-08-03

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05269460A (ja) * 1992-03-27 1993-10-19 Kurita Water Ind Ltd アンモニアおよびアルカリ土類金属イオン含有水の処理方法
US6126848A (en) * 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
JP3449600B2 (ja) * 1998-05-06 2003-09-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 化学反応による終点の検出
US6228280B1 (en) * 1998-05-06 2001-05-08 International Business Machines Corporation Endpoint detection by chemical reaction and reagent
EP0957086A3 (en) * 1998-05-14 2003-02-12 Haldor Topsoe A/S Process for the removal of metal compounds from an aqueous acid solution
US6021679A (en) * 1998-08-04 2000-02-08 International Business Machines Corporation Probe for slurry gas sampling
US6899784B1 (en) * 2002-06-27 2005-05-31 International Business Machines Corporation Apparatus for detecting CMP endpoint in acidic slurries
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride

Also Published As

Publication number Publication date
TW200804577A (en) 2008-01-16
SG137837A1 (en) 2007-12-28
US20070281483A1 (en) 2007-12-06
FR2901802B1 (fr) 2012-11-30
JP2007324606A (ja) 2007-12-13
US7297633B1 (en) 2007-11-20
CN101085902A (zh) 2007-12-12
CN101085902B (zh) 2010-09-08
DE102007024142A1 (de) 2007-12-06
FR2901802A1 (fr) 2007-12-07

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