CN101085902B - 具有改进的终点检测能力、用来对二氧化硅和氮化硅进行化学机械抛光的组合物 - Google Patents

具有改进的终点检测能力、用来对二氧化硅和氮化硅进行化学机械抛光的组合物 Download PDF

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Publication number
CN101085902B
CN101085902B CN2007101098948A CN200710109894A CN101085902B CN 101085902 B CN101085902 B CN 101085902B CN 2007101098948 A CN2007101098948 A CN 2007101098948A CN 200710109894 A CN200710109894 A CN 200710109894A CN 101085902 B CN101085902 B CN 101085902B
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China
Prior art keywords
hydroxide
weight
aqueous solution
polishing
carboxylic acid
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Expired - Fee Related
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CN2007101098948A
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English (en)
Chinese (zh)
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CN101085902A (zh
Inventor
B·L·穆勒
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ROHM AND HAAS ELECTRONIC MATER
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ROHM AND HAAS ELECTRONIC MATER
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Publication of CN101085902A publication Critical patent/CN101085902A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2007101098948A 2006-06-05 2007-06-05 具有改进的终点检测能力、用来对二氧化硅和氮化硅进行化学机械抛光的组合物 Expired - Fee Related CN101085902B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/446,936 US7297633B1 (en) 2006-06-05 2006-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection
US11/446,936 2006-06-05

Publications (2)

Publication Number Publication Date
CN101085902A CN101085902A (zh) 2007-12-12
CN101085902B true CN101085902B (zh) 2010-09-08

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007101098948A Expired - Fee Related CN101085902B (zh) 2006-06-05 2007-06-05 具有改进的终点检测能力、用来对二氧化硅和氮化硅进行化学机械抛光的组合物

Country Status (8)

Country Link
US (1) US7297633B1 (enExample)
JP (1) JP2007324606A (enExample)
KR (1) KR20070116543A (enExample)
CN (1) CN101085902B (enExample)
DE (1) DE102007024142A1 (enExample)
FR (1) FR2901802B1 (enExample)
SG (1) SG137837A1 (enExample)
TW (1) TW200804577A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2090400A4 (en) * 2006-09-15 2010-11-03 Hitachi Chemical Co Ltd MEANS FOR CHEMICAL-MECHANICAL POLISHING (CMP), ADDITIVE SOLUTION FOR THE CMP POLISHERS AND METHOD FOR POLISHING A SUBSTRATE THROUGH THE USE OF THE POLISHING AGENT AND THE ADDITIVE SOLUTION
US20090181475A1 (en) * 2008-01-11 2009-07-16 Novellus Systems, Inc. Detecting the presence of a workpiece relative to a carrier head
US8366959B2 (en) 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
WO2011072706A1 (de) 2009-12-18 2011-06-23 Rena Gmbh Verfahren zum abtragen von substratschichten
US8671685B2 (en) * 2010-03-08 2014-03-18 Tma Power, Llc Microturbine Sun Tracker
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
JP2012146975A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials
JPWO2023145572A1 (enExample) * 2022-01-28 2023-08-03

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1637100A (zh) * 2003-11-26 2005-07-13 Cmp罗姆和哈斯电子材料控股公司 用于化学机械抛光氧化硅和氮化硅的组合物和方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05269460A (ja) * 1992-03-27 1993-10-19 Kurita Water Ind Ltd アンモニアおよびアルカリ土類金属イオン含有水の処理方法
JP3449600B2 (ja) * 1998-05-06 2003-09-22 インターナショナル・ビジネス・マシーンズ・コーポレーション 化学反応による終点の検出
US6126848A (en) 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
US6228280B1 (en) * 1998-05-06 2001-05-08 International Business Machines Corporation Endpoint detection by chemical reaction and reagent
EP0957086A3 (en) * 1998-05-14 2003-02-12 Haldor Topsoe A/S Process for the removal of metal compounds from an aqueous acid solution
US6021679A (en) 1998-08-04 2000-02-08 International Business Machines Corporation Probe for slurry gas sampling
US6899784B1 (en) 2002-06-27 2005-05-31 International Business Machines Corporation Apparatus for detecting CMP endpoint in acidic slurries

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1637100A (zh) * 2003-11-26 2005-07-13 Cmp罗姆和哈斯电子材料控股公司 用于化学机械抛光氧化硅和氮化硅的组合物和方法

Also Published As

Publication number Publication date
FR2901802A1 (fr) 2007-12-07
US7297633B1 (en) 2007-11-20
JP2007324606A (ja) 2007-12-13
CN101085902A (zh) 2007-12-12
TW200804577A (en) 2008-01-16
FR2901802B1 (fr) 2012-11-30
US20070281483A1 (en) 2007-12-06
SG137837A1 (en) 2007-12-28
KR20070116543A (ko) 2007-12-10
DE102007024142A1 (de) 2007-12-06

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Granted publication date: 20100908

Termination date: 20130605