JP2007324606A - 改良された終点検出を有する、シリカ及び窒化ケイ素をケミカルメカニカル研磨するための組成物 - Google Patents

改良された終点検出を有する、シリカ及び窒化ケイ素をケミカルメカニカル研磨するための組成物 Download PDF

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Publication number
JP2007324606A
JP2007324606A JP2007148759A JP2007148759A JP2007324606A JP 2007324606 A JP2007324606 A JP 2007324606A JP 2007148759 A JP2007148759 A JP 2007148759A JP 2007148759 A JP2007148759 A JP 2007148759A JP 2007324606 A JP2007324606 A JP 2007324606A
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JP
Japan
Prior art keywords
hydroxide
weight
ion
carboxylic acid
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007148759A
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English (en)
Japanese (ja)
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JP2007324606A5 (enExample
Inventor
Brian L Mueller
ブライアン・エル・ミューラー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
DuPont Electronic Materials International LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of JP2007324606A publication Critical patent/JP2007324606A/ja
Publication of JP2007324606A5 publication Critical patent/JP2007324606A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2007148759A 2006-06-05 2007-06-05 改良された終点検出を有する、シリカ及び窒化ケイ素をケミカルメカニカル研磨するための組成物 Pending JP2007324606A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/446,936 US7297633B1 (en) 2006-06-05 2006-06-05 Compositions for chemical mechanical polishing silica and silicon nitride having improved endpoint detection

Publications (2)

Publication Number Publication Date
JP2007324606A true JP2007324606A (ja) 2007-12-13
JP2007324606A5 JP2007324606A5 (enExample) 2010-07-22

Family

ID=38650726

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007148759A Pending JP2007324606A (ja) 2006-06-05 2007-06-05 改良された終点検出を有する、シリカ及び窒化ケイ素をケミカルメカニカル研磨するための組成物

Country Status (8)

Country Link
US (1) US7297633B1 (enExample)
JP (1) JP2007324606A (enExample)
KR (1) KR20070116543A (enExample)
CN (1) CN101085902B (enExample)
DE (1) DE102007024142A1 (enExample)
FR (1) FR2901802B1 (enExample)
SG (1) SG137837A1 (enExample)
TW (1) TW200804577A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102464946A (zh) * 2010-11-19 2012-05-23 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
WO2023145572A1 (ja) * 2022-01-28 2023-08-03 Ａｇｃ株式会社 研磨剤、研磨剤用添加液および研磨方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2090400A4 (en) * 2006-09-15 2010-11-03 Hitachi Chemical Co Ltd MEANS FOR CHEMICAL-MECHANICAL POLISHING (CMP), ADDITIVE SOLUTION FOR THE CMP POLISHERS AND METHOD FOR POLISHING A SUBSTRATE THROUGH THE USE OF THE POLISHING AGENT AND THE ADDITIVE SOLUTION
US20090181475A1 (en) * 2008-01-11 2009-07-16 Novellus Systems, Inc. Detecting the presence of a workpiece relative to a carrier head
US8366959B2 (en) 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
US8735293B2 (en) * 2008-11-05 2014-05-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition and methods relating thereto
WO2011072706A1 (de) 2009-12-18 2011-06-23 Rena Gmbh Verfahren zum abtragen von substratschichten
US8671685B2 (en) * 2010-03-08 2014-03-18 Tma Power, Llc Microturbine Sun Tracker
JP2012146975A (ja) * 2010-12-24 2012-08-02 Hitachi Chem Co Ltd 研磨液及びこの研磨液を用いた基板の研磨方法
US8808573B2 (en) * 2011-04-15 2014-08-19 Cabot Microelectronics Corporation Compositions and methods for selective polishing of silicon nitride materials

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05269460A (ja) * 1992-03-27 1993-10-19 Kurita Water Ind Ltd アンモニアおよびアルカリ土類金属イオン含有水の処理方法
JPH11349495A (ja) * 1998-05-14 1999-12-21 Haldor Topsoe As 水性酸溶液から金属化合物を除去する方法
JP2000031102A (ja) * 1998-05-06 2000-01-28 Internatl Business Mach Corp <Ibm> 化学反応による終点の検出
JP2005191548A (ja) * 2003-11-26 2005-07-14 Rohm & Haas Electronic Materials Cmp Holdings Inc シリカ及び窒化ケイ素のケミカルメカニカルポリッシングのための組成物及び方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6126848A (en) 1998-05-06 2000-10-03 International Business Machines Corporation Indirect endpoint detection by chemical reaction and chemiluminescence
US6228280B1 (en) * 1998-05-06 2001-05-08 International Business Machines Corporation Endpoint detection by chemical reaction and reagent
US6021679A (en) 1998-08-04 2000-02-08 International Business Machines Corporation Probe for slurry gas sampling
US6899784B1 (en) 2002-06-27 2005-05-31 International Business Machines Corporation Apparatus for detecting CMP endpoint in acidic slurries

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05269460A (ja) * 1992-03-27 1993-10-19 Kurita Water Ind Ltd アンモニアおよびアルカリ土類金属イオン含有水の処理方法
JP2000031102A (ja) * 1998-05-06 2000-01-28 Internatl Business Mach Corp <Ibm> 化学反応による終点の検出
JPH11349495A (ja) * 1998-05-14 1999-12-21 Haldor Topsoe As 水性酸溶液から金属化合物を除去する方法
JP2005191548A (ja) * 2003-11-26 2005-07-14 Rohm & Haas Electronic Materials Cmp Holdings Inc シリカ及び窒化ケイ素のケミカルメカニカルポリッシングのための組成物及び方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102464946A (zh) * 2010-11-19 2012-05-23 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
WO2023145572A1 (ja) * 2022-01-28 2023-08-03 Ａｇｃ株式会社 研磨剤、研磨剤用添加液および研磨方法

Also Published As

Publication number Publication date
FR2901802A1 (fr) 2007-12-07
US7297633B1 (en) 2007-11-20
CN101085902A (zh) 2007-12-12
TW200804577A (en) 2008-01-16
CN101085902B (zh) 2010-09-08
FR2901802B1 (fr) 2012-11-30
US20070281483A1 (en) 2007-12-06
SG137837A1 (en) 2007-12-28
KR20070116543A (ko) 2007-12-10
DE102007024142A1 (de) 2007-12-06

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