KR20070083626A - 고주파 집적회로 - Google Patents

고주파 집적회로 Download PDF

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Publication number
KR20070083626A
KR20070083626A KR1020077007563A KR20077007563A KR20070083626A KR 20070083626 A KR20070083626 A KR 20070083626A KR 1020077007563 A KR1020077007563 A KR 1020077007563A KR 20077007563 A KR20077007563 A KR 20077007563A KR 20070083626 A KR20070083626 A KR 20070083626A
Authority
KR
South Korea
Prior art keywords
field effect
effect transistor
high frequency
type field
enhancement type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020077007563A
Other languages
English (en)
Korean (ko)
Inventor
가즈마사 고하마
Original Assignee
소니 가부시끼 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 가부시끼 가이샤 filed Critical 소니 가부시끼 가이샤
Publication of KR20070083626A publication Critical patent/KR20070083626A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020077007563A 2004-10-13 2005-10-12 고주파 집적회로 Ceased KR20070083626A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00298955 2004-10-13
JP2004298955A JP4843927B2 (ja) 2004-10-13 2004-10-13 高周波集積回路

Publications (1)

Publication Number Publication Date
KR20070083626A true KR20070083626A (ko) 2007-08-24

Family

ID=36148375

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077007563A Ceased KR20070083626A (ko) 2004-10-13 2005-10-12 고주파 집적회로

Country Status (7)

Country Link
US (1) US8797697B2 (https=)
EP (1) EP1806784B1 (https=)
JP (1) JP4843927B2 (https=)
KR (1) KR20070083626A (https=)
CN (2) CN101546765A (https=)
TW (1) TW200623631A (https=)
WO (1) WO2006041087A1 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8144441B2 (en) * 2006-08-30 2012-03-27 Triquint Semiconductor, Inc. Electrostatic discharge protection circuit for compound semiconductor devices and circuits
JP2008108840A (ja) * 2006-10-24 2008-05-08 Mitsubishi Electric Corp 半導体装置
JP2009054851A (ja) * 2007-08-28 2009-03-12 Panasonic Corp 半導体集積回路
JP2009087962A (ja) * 2007-09-27 2009-04-23 Panasonic Corp 保護回路及び半導体集積回路
WO2010112971A2 (en) * 2009-03-31 2010-10-07 Freescale Semiconductor, Inc. Integrated protection circuit
US8427796B2 (en) * 2010-01-19 2013-04-23 Qualcomm, Incorporated High voltage, high frequency ESD protection circuit for RF ICs
JP5424128B2 (ja) * 2010-11-09 2014-02-26 次世代パワーデバイス技術研究組合 保護素子およびそれを備えた半導体装置
JP2012190872A (ja) * 2011-03-09 2012-10-04 Ricoh Co Ltd 面発光レーザ素子の製造方法、光走査装置及び画像形成装置
US9064704B2 (en) * 2013-02-15 2015-06-23 Win Semiconductors Corp. Integrated circuits with ESD protection devices
US9812440B2 (en) * 2014-08-29 2017-11-07 Fairchild Semiconductor Corporation Biased ESD circuit
US20170092637A1 (en) * 2015-09-30 2017-03-30 Infineon Technologies Ag Semiconductor ESD Protection Device and Method
JP6597357B2 (ja) * 2016-02-09 2019-10-30 三菱電機株式会社 保護ダイオード付き電界効果トランジスタ
CN206658047U (zh) * 2016-12-16 2017-11-21 江苏安其威微电子科技有限公司 Mim电容的esd保护电路及其射频开关装置
CN113131875B (zh) * 2021-03-31 2022-07-12 复旦大学 一种高可靠性低噪声放大器
JP2023136954A (ja) 2022-03-17 2023-09-29 キオクシア株式会社 メモリデバイス及びメモリデバイスの製造方法
US12396196B2 (en) * 2022-08-19 2025-08-19 Globalfoundries U.S. Inc. Protective structure with depletion-mode and enhancement-mode transistors
CN116545425A (zh) * 2023-07-06 2023-08-04 合肥芯谷微电子股份有限公司 一种毫米波单刀单掷开关

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57162466A (en) 1981-03-31 1982-10-06 Toshiba Corp Input-output protective circuit for integrated circuit
JPH0449652A (ja) * 1990-06-19 1992-02-19 Nec Corp 半導体装置の入出力保護回路
JPH05136360A (ja) * 1991-11-14 1993-06-01 Hitachi Ltd 静電破壊保護回路、及び半導体集積回路
JP3113951B2 (ja) 1992-06-26 2000-12-04 日本電気エンジニアリング株式会社 ＧａＡｓＦＥＴ保護電源回路
US5615073A (en) * 1995-06-22 1997-03-25 National Semiconductor Corporation Electrostatic discharge protection apparatus
US5751525A (en) * 1996-01-05 1998-05-12 Analog Devices, Inc. EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages
FR2744578B1 (fr) 1996-02-06 1998-04-30 Motorola Semiconducteurs Amlificateur hautes frequences
US5774318A (en) * 1996-11-27 1998-06-30 Raytheon Company I.C. power supply terminal protection clamp
WO1998047190A1 (en) 1997-04-16 1998-10-22 The Board Of Trustees Of The Leland Stanford Junior University Distributed esd protection device for high speed integrated circuits
JP3570180B2 (ja) * 1997-11-20 2004-09-29 セイコーエプソン株式会社 半導体集積装置
JP2000067323A (ja) 1998-08-20 2000-03-03 Toshiba Tec Corp ドロワ
US6459553B1 (en) * 1999-03-19 2002-10-01 Ati International Srl Single gate oxide electrostatic discharge protection circuit
WO2000067323A1 (fr) * 1999-04-28 2000-11-09 Hitachi, Ltd. Circuit integre avec protection contre les deteriorations electrostatiques
KR100379619B1 (ko) * 2000-10-13 2003-04-10 광주과학기술원 단일집적 ｅ／ｄ 모드 ｈｅｍｔ 및 그 제조방법
TW511179B (en) * 2000-11-28 2002-11-21 Nat Science Council Method of using plasma treatment to improve electric characteristic of oxide layer
US6661276B1 (en) * 2002-07-29 2003-12-09 Lovoltech Inc. MOSFET driver matching circuit for an enhancement mode JFET
US7183592B2 (en) * 2004-05-26 2007-02-27 Raytheon Company Field effect transistor

Also Published As

Publication number Publication date
EP1806784B1 (en) 2013-01-16
CN100557802C (zh) 2009-11-04
CN101546765A (zh) 2009-09-30
TW200623631A (en) 2006-07-01
EP1806784A4 (en) 2011-04-13
JP2006114618A (ja) 2006-04-27
TWI326157B (https=) 2010-06-11
US20080043388A1 (en) 2008-02-21
JP4843927B2 (ja) 2011-12-21
EP1806784A1 (en) 2007-07-11
CN101040381A (zh) 2007-09-19
US8797697B2 (en) 2014-08-05
WO2006041087A1 (ja) 2006-04-20

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