KR20070041609A - 투영 광학계, 노광 장치 및 노광 방법 - Google Patents

투영 광학계, 노광 장치 및 노광 방법 Download PDF

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Publication number
KR20070041609A
KR20070041609A KR1020077005157A KR20077005157A KR20070041609A KR 20070041609 A KR20070041609 A KR 20070041609A KR 1020077005157 A KR1020077005157 A KR 1020077005157A KR 20077005157 A KR20077005157 A KR 20077005157A KR 20070041609 A KR20070041609 A KR 20070041609A
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KR
South Korea
Prior art keywords
optical system
optical element
projection
optical
image
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Withdrawn
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KR1020077005157A
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English (en)
Korean (ko)
Inventor
야스히로 오무라
소이치 오와
Original Assignee
가부시키가이샤 니콘
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Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20070041609A publication Critical patent/KR20070041609A/ko
Withdrawn legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0892Catadioptric systems specially adapted for the UV
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70225Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020077005157A 2004-08-03 2005-07-22 투영 광학계, 노광 장치 및 노광 방법 Withdrawn KR20070041609A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2004227226 2004-08-03
JPJP-P-2004-00227226 2004-08-03
JPJP-P-2004-00267319 2004-09-14
JP2004267319 2004-09-14
JP2005136902A JP2006113533A (ja) 2004-08-03 2005-05-10 投影光学系、露光装置、および露光方法
JPJP-P-2005-00136902 2005-05-10

Publications (1)

Publication Number Publication Date
KR20070041609A true KR20070041609A (ko) 2007-04-18

Family

ID=35787025

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077005157A Withdrawn KR20070041609A (ko) 2004-08-03 2005-07-22 투영 광학계, 노광 장치 및 노광 방법

Country Status (7)

Country Link
US (1) US8102508B2 (https=)
EP (1) EP1783525A4 (https=)
JP (1) JP2006113533A (https=)
KR (1) KR20070041609A (https=)
IL (1) IL181136A0 (https=)
TW (1) TW200609690A (https=)
WO (1) WO2006013734A1 (https=)

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US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7466489B2 (en) * 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20160085375A (ko) 2004-05-17 2016-07-15 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
JP2008532273A (ja) * 2005-02-25 2008-08-14 カール ツァイス エスエムテー アクチエンゲゼルシャフト マイクロ・リソグラフィー投影露光装置のための光学システム
EP2280295A1 (de) * 2005-03-08 2011-02-02 Schott Ag Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung
JP2006309220A (ja) * 2005-04-29 2006-11-09 Carl Zeiss Smt Ag 投影対物レンズ
WO2007017473A1 (de) * 2005-08-10 2007-02-15 Carl Zeiss Smt Ag Abbildungssystem, insbesondere projektionsobjektiv einer mikrolithographischen projektionsbelichtungsanlage
WO2007132619A1 (ja) * 2006-05-12 2007-11-22 Nikon Corporation 結像光学系、露光装置、およびデバイス製造方法
US7557997B2 (en) * 2006-09-28 2009-07-07 Nikon Corporation Immersion objective optical system, exposure apparatus, device fabrication method, and boundary optical element
JP5588176B2 (ja) * 2006-12-28 2014-09-10 カール・ツァイス・エスエムティー・ゲーエムベーハー 傾斜偏向ミラーを有する反射屈折投影対物器械、投影露光装置、投影露光方法、及びミラー
JP2008216498A (ja) 2007-03-01 2008-09-18 Canon Inc 投影光学系、露光装置及びデバイス製造方法
JP2009031603A (ja) 2007-07-27 2009-02-12 Canon Inc 投影光学系、露光装置及びデバイス製造方法
JP2009086038A (ja) 2007-09-27 2009-04-23 Canon Inc 投影光学系、露光装置及びデバイス製造方法
US20090091728A1 (en) * 2007-09-28 2009-04-09 Carl Zeiss Smt Ag Compact High Aperture Folded Catadioptric Projection Objective
FR2927708A1 (fr) * 2008-02-19 2009-08-21 Commissariat Energie Atomique Procede de photolithographie ultraviolette a immersion
US8345350B2 (en) 2008-06-20 2013-01-01 Carl Zeiss Smt Gmbh Chromatically corrected objective with specifically structured and arranged dioptric optical elements and projection exposure apparatus including the same
DE102009011329A1 (de) 2009-03-05 2010-09-09 Carl Zeiss Smt Ag Kompaktes katadioptrisches Projektionsobjektiv für die Immersionslithographie sowie Projektionsbelichtungsverfahren
DE102009037077B3 (de) 2009-08-13 2011-02-17 Carl Zeiss Smt Ag Katadioptrisches Projektionsobjektiv
US9651873B2 (en) * 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
CN110114710B (zh) * 2016-10-31 2020-11-27 德遁公司 毫微微投影仪光学系统

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JP2830492B2 (ja) * 1991-03-06 1998-12-02 株式会社ニコン 投影露光装置及び投影露光方法
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
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JP4333078B2 (ja) 2002-04-26 2009-09-16 株式会社ニコン 投影光学系、該投影光学系を備えた露光装置および該投影光学系を用いた露光方法並びにデバイス製造方法
JP4338434B2 (ja) 2002-06-07 2009-10-07 富士フイルム株式会社 透過型2次元光変調素子及びそれを用いた露光装置
JP4305611B2 (ja) * 2002-07-18 2009-07-29 株式会社ニコン 照明光学装置、露光装置および露光方法
KR20050035890A (ko) * 2002-08-23 2005-04-19 가부시키가이샤 니콘 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
JP2004205698A (ja) * 2002-12-24 2004-07-22 Nikon Corp 投影光学系、露光装置および露光方法
WO2007071569A1 (en) 2005-12-23 2007-06-28 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus
US7557997B2 (en) * 2006-09-28 2009-07-07 Nikon Corporation Immersion objective optical system, exposure apparatus, device fabrication method, and boundary optical element

Also Published As

Publication number Publication date
EP1783525A4 (en) 2009-09-23
IL181136A0 (en) 2007-07-04
JP2006113533A (ja) 2006-04-27
US8102508B2 (en) 2012-01-24
EP1783525A1 (en) 2007-05-09
HK1102284A1 (en) 2007-11-09
US20080165336A1 (en) 2008-07-10
WO2006013734A1 (ja) 2006-02-09
TW200609690A (en) 2006-03-16

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