TW200609690A - Projection optical system, exposure device and method of exposure - Google Patents

Projection optical system, exposure device and method of exposure

Info

Publication number
TW200609690A
TW200609690A TW094125534A TW94125534A TW200609690A TW 200609690 A TW200609690 A TW 200609690A TW 094125534 A TW094125534 A TW 094125534A TW 94125534 A TW94125534 A TW 94125534A TW 200609690 A TW200609690 A TW 200609690A
Authority
TW
Taiwan
Prior art keywords
optical system
projection optical
larger
exposure
projection
Prior art date
Application number
TW094125534A
Other languages
English (en)
Chinese (zh)
Inventor
Yasuhiro Omura
Soichi Owa
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200609690A publication Critical patent/TW200609690A/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08Catadioptric systems
    • G02B17/0892Catadioptric systems specially adapted for the UV
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70225Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW094125534A 2004-08-03 2005-07-28 Projection optical system, exposure device and method of exposure TW200609690A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004227226 2004-08-03
JP2004267319 2004-09-14
JP2005136902A JP2006113533A (ja) 2004-08-03 2005-05-10 投影光学系、露光装置、および露光方法

Publications (1)

Publication Number Publication Date
TW200609690A true TW200609690A (en) 2006-03-16

Family

ID=35787025

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094125534A TW200609690A (en) 2004-08-03 2005-07-28 Projection optical system, exposure device and method of exposure

Country Status (7)

Country Link
US (1) US8102508B2 (https=)
EP (1) EP1783525A4 (https=)
JP (1) JP2006113533A (https=)
KR (1) KR20070041609A (https=)
IL (1) IL181136A0 (https=)
TW (1) TW200609690A (https=)
WO (1) WO2006013734A1 (https=)

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* Cited by examiner, † Cited by third party
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US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7466489B2 (en) * 2003-12-15 2008-12-16 Susanne Beder Projection objective having a high aperture and a planar end surface
US20080151364A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20160085375A (ko) 2004-05-17 2016-07-15 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
JP2008532273A (ja) * 2005-02-25 2008-08-14 カール ツァイス エスエムテー アクチエンゲゼルシャフト マイクロ・リソグラフィー投影露光装置のための光学システム
EP2280295A1 (de) * 2005-03-08 2011-02-02 Schott Ag Verfahren zur Herstellung von optischen Elementen für die Mikrolithographie, damit erhältliche Linsensysteme und deren Verwendung
JP2006309220A (ja) * 2005-04-29 2006-11-09 Carl Zeiss Smt Ag 投影対物レンズ
WO2007017473A1 (de) * 2005-08-10 2007-02-15 Carl Zeiss Smt Ag Abbildungssystem, insbesondere projektionsobjektiv einer mikrolithographischen projektionsbelichtungsanlage
WO2007132619A1 (ja) * 2006-05-12 2007-11-22 Nikon Corporation 結像光学系、露光装置、およびデバイス製造方法
US7557997B2 (en) * 2006-09-28 2009-07-07 Nikon Corporation Immersion objective optical system, exposure apparatus, device fabrication method, and boundary optical element
JP5588176B2 (ja) * 2006-12-28 2014-09-10 カール・ツァイス・エスエムティー・ゲーエムベーハー 傾斜偏向ミラーを有する反射屈折投影対物器械、投影露光装置、投影露光方法、及びミラー
JP2008216498A (ja) 2007-03-01 2008-09-18 Canon Inc 投影光学系、露光装置及びデバイス製造方法
JP2009031603A (ja) 2007-07-27 2009-02-12 Canon Inc 投影光学系、露光装置及びデバイス製造方法
JP2009086038A (ja) 2007-09-27 2009-04-23 Canon Inc 投影光学系、露光装置及びデバイス製造方法
US20090091728A1 (en) * 2007-09-28 2009-04-09 Carl Zeiss Smt Ag Compact High Aperture Folded Catadioptric Projection Objective
FR2927708A1 (fr) * 2008-02-19 2009-08-21 Commissariat Energie Atomique Procede de photolithographie ultraviolette a immersion
US8345350B2 (en) 2008-06-20 2013-01-01 Carl Zeiss Smt Gmbh Chromatically corrected objective with specifically structured and arranged dioptric optical elements and projection exposure apparatus including the same
DE102009011329A1 (de) 2009-03-05 2010-09-09 Carl Zeiss Smt Ag Kompaktes katadioptrisches Projektionsobjektiv für die Immersionslithographie sowie Projektionsbelichtungsverfahren
DE102009037077B3 (de) 2009-08-13 2011-02-17 Carl Zeiss Smt Ag Katadioptrisches Projektionsobjektiv
US9651873B2 (en) * 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
CN110114710B (zh) * 2016-10-31 2020-11-27 德遁公司 毫微微投影仪光学系统

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JP2830492B2 (ja) * 1991-03-06 1998-12-02 株式会社ニコン 投影露光装置及び投影露光方法
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP3555230B2 (ja) * 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
EP1944654A3 (en) 1996-11-28 2010-06-02 Nikon Corporation An exposure apparatus and an exposure method
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2000133588A (ja) 1998-08-18 2000-05-12 Nikon Corp 露光装置及び方法、該露光装置の製造方法並びに該露光装置を用いたデバイス製造方法
US6451507B1 (en) * 1998-08-18 2002-09-17 Nikon Corporation Exposure apparatus and method
WO2001023933A1 (en) * 1999-09-29 2001-04-05 Nikon Corporation Projection optical system
WO2001023935A1 (en) * 1999-09-29 2001-04-05 Nikon Corporation Projection exposure method and apparatus and projection optical system
US7301605B2 (en) * 2000-03-03 2007-11-27 Nikon Corporation Projection exposure apparatus and method, catadioptric optical system and manufacturing method of devices
JP2001345245A (ja) 2000-05-31 2001-12-14 Nikon Corp 露光方法及び露光装置並びにデバイス製造方法
GB2368219A (en) * 2000-09-13 2002-04-24 Roke Manor Research Camera system with GPS
US6788389B2 (en) * 2001-07-10 2004-09-07 Nikon Corporation Production method of projection optical system
TW571344B (en) * 2001-07-10 2004-01-11 Nikon Corp Manufacturing method for projection optic system
JP4333078B2 (ja) 2002-04-26 2009-09-16 株式会社ニコン 投影光学系、該投影光学系を備えた露光装置および該投影光学系を用いた露光方法並びにデバイス製造方法
JP4338434B2 (ja) 2002-06-07 2009-10-07 富士フイルム株式会社 透過型2次元光変調素子及びそれを用いた露光装置
JP4305611B2 (ja) * 2002-07-18 2009-07-29 株式会社ニコン 照明光学装置、露光装置および露光方法
KR20050035890A (ko) * 2002-08-23 2005-04-19 가부시키가이샤 니콘 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
JP2004205698A (ja) * 2002-12-24 2004-07-22 Nikon Corp 投影光学系、露光装置および露光方法
WO2007071569A1 (en) 2005-12-23 2007-06-28 Carl Zeiss Smt Ag Projection objective of a microlithographic projection exposure apparatus
US7557997B2 (en) * 2006-09-28 2009-07-07 Nikon Corporation Immersion objective optical system, exposure apparatus, device fabrication method, and boundary optical element

Also Published As

Publication number Publication date
EP1783525A4 (en) 2009-09-23
IL181136A0 (en) 2007-07-04
JP2006113533A (ja) 2006-04-27
US8102508B2 (en) 2012-01-24
EP1783525A1 (en) 2007-05-09
HK1102284A1 (en) 2007-11-09
US20080165336A1 (en) 2008-07-10
WO2006013734A1 (ja) 2006-02-09
KR20070041609A (ko) 2007-04-18

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