KR20070004717A - 반도체 장치의 제조 방법 - Google Patents
반도체 장치의 제조 방법 Download PDFInfo
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- KR20070004717A KR20070004717A KR1020067018779A KR20067018779A KR20070004717A KR 20070004717 A KR20070004717 A KR 20070004717A KR 1020067018779 A KR1020067018779 A KR 1020067018779A KR 20067018779 A KR20067018779 A KR 20067018779A KR 20070004717 A KR20070004717 A KR 20070004717A
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- Prior art keywords
- oxide film
- silicon oxide
- semiconductor device
- film
- plasma
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 43
- 239000007789 gas Substances 0.000 claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 230000003647 oxidation Effects 0.000 claims abstract description 25
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000126 substance Substances 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000001301 oxygen Substances 0.000 claims abstract description 12
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 11
- 230000001590 oxidative effect Effects 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 36
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 238000005121 nitriding Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 description 114
- 238000012545 processing Methods 0.000 description 26
- 238000011282 treatment Methods 0.000 description 17
- 238000000137 annealing Methods 0.000 description 12
- 239000010409 thin film Substances 0.000 description 11
- 125000004429 atom Chemical group 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 239000000498 cooling water Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3145—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers formed by deposition from a gas or vapour
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
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- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (8)
- 실리콘 기판 표면을 약액에 의해 에칭한 후에 형성되는 산화규소막을 가열하여 박막화시키는 산화규소막의 박막화 공정과,상기 박막화된 산화규소막을 가열하고, 적어도 산소를 함유하는 가스에 의해 산화하는 열산화 공정, 또는 상기 박막화된 산화규소막을, 플라즈마 방전된 적어도 산소를 함유하는 가스에 의해 산화하는 플라즈마 산화 공정을 가지는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 청구항 1에 있어서, 상기 박막화 공정에서는, 상기 에칭한 후에 형성되는 산화규소막을 온도 800℃ 이상으로 처리하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 청구항 2에 있어서, 상기 박막화 공정에서는, 상기 에칭한 후에 형성되는 산화규소막을 온도 800℃∼1000℃로 처리하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 청구항 1 내지 청구항 3 중 어느 한 항에 있어서, 상기 박막화 공정에서는, 상기 에칭한 후에 형성되는 산화규소막을 감압하에서 처리하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 청구항 4에 있어서, 상기 감압하에서의 압력이 266Pa∼2660Pa 인 것을 특징으로 하는 반도체 장치의 제조 방법.
- 청구항 4에 있어서, 상기 박막화 공정에서는, 상기 에칭한 후에 형성되는 산화규소막을 질소로 처리하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 청구항 6에 있어서, 상기 박막화 공정에서는, 상기 에칭한 후에 형성되는 산화규소막을 5초∼60초 처리하는 것을 특징으로 하는 반도체 장치의 제조 방법.
- 청구항 1 내지 청구항 3 중 어느 한 항에 있어서, 상기 산화규소막을 플라즈마 방전된 적어도 질소를 함유하는 가스에 의해 질화하여 산 질화규소막을 형성하는 플라즈마 질화 공정을 더 가지고, 상기 플라즈마 질화 공정에 의해 상기 산 질화규소막의 질소의 도우즈량을 1×1015[atoms/㎠] 이상으로 하는 것을 특징으로 하는 반도체 장치의 제조 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004252138 | 2004-08-31 | ||
JPJP-P-2004-00252138 | 2004-08-31 | ||
JPJP-P-2005-00108645 | 2005-04-05 | ||
JP2005108645 | 2005-04-05 |
Publications (2)
Publication Number | Publication Date |
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KR20070004717A true KR20070004717A (ko) | 2007-01-09 |
KR100829335B1 KR100829335B1 (ko) | 2008-05-13 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020067018779A KR100829335B1 (ko) | 2004-08-31 | 2005-07-27 | 반도체 장치의 제조 방법 |
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Country | Link |
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US (1) | US20080096395A1 (ko) |
JP (1) | JPWO2006025164A1 (ko) |
KR (1) | KR100829335B1 (ko) |
TW (1) | TW200614340A (ko) |
WO (1) | WO2006025164A1 (ko) |
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Publication number | Priority date | Publication date | Assignee | Title |
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US20080206968A1 (en) * | 2006-12-27 | 2008-08-28 | Hitachi Kokusai Electric Inc. | Manufacturing method of semiconductor device |
KR20100006009A (ko) * | 2008-07-08 | 2010-01-18 | 주성엔지니어링(주) | 반도체 제조 장치 |
US8883624B1 (en) * | 2013-09-27 | 2014-11-11 | Cypress Semiconductor Corporation | Integration of a memory transistor into high-K, metal gate CMOS process flow |
KR102578827B1 (ko) * | 2018-04-24 | 2023-09-15 | 삼성전자주식회사 | 유연한 유무기 보호막 및 그 제조방법 |
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JP3952542B2 (ja) * | 1997-06-20 | 2007-08-01 | ソニー株式会社 | シリコン酸化膜の形成方法 |
US6046088A (en) * | 1997-12-05 | 2000-04-04 | Advanced Micro Devices, Inc. | Method for self-aligning polysilicon gates with field isolation and the resultant structure |
JPH11307526A (ja) * | 1998-04-24 | 1999-11-05 | Nec Corp | 酸化膜の作製方法 |
US20010014483A1 (en) * | 1998-11-24 | 2001-08-16 | Hsueh-Hao Shih | Method of forming a gate oxide layer |
KR100327329B1 (ko) * | 1998-12-11 | 2002-07-04 | 윤종용 | 저압하의실리콘산화막및산질화막형성방법 |
JP2001274154A (ja) * | 2000-01-18 | 2001-10-05 | Applied Materials Inc | 成膜方法、成膜装置、半導体装置及びその製造方法 |
US6444592B1 (en) * | 2000-06-20 | 2002-09-03 | International Business Machines Corporation | Interfacial oxidation process for high-k gate dielectric process integration |
US6362085B1 (en) * | 2000-07-19 | 2002-03-26 | Taiwan Semiconductor Manufacturing Company | Method for reducing gate oxide effective thickness and leakage current |
JP4806127B2 (ja) * | 2001-02-01 | 2011-11-02 | 東京エレクトロン株式会社 | 薄膜形成方法 |
WO2003049173A1 (fr) * | 2001-12-07 | 2003-06-12 | Tokyo Electron Limited | Procede de nitruration de film isolant, dispositif a semi-conducteur et son procede de production et dispositif et procede de traitement de surface |
JP4559739B2 (ja) * | 2002-03-29 | 2010-10-13 | 東京エレクトロン株式会社 | 電子デバイス用材料およびその製造方法 |
JP3484177B2 (ja) * | 2002-04-26 | 2004-01-06 | 沖電気工業株式会社 | 半導体装置とその製造方法 |
US6649538B1 (en) * | 2002-10-09 | 2003-11-18 | Taiwan Semiconductor Manufacturing Co. Ltd. | Method for plasma treating and plasma nitriding gate oxides |
JP2005026538A (ja) * | 2003-07-04 | 2005-01-27 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
-
2005
- 2005-07-27 KR KR1020067018779A patent/KR100829335B1/ko active IP Right Grant
- 2005-07-27 US US10/594,739 patent/US20080096395A1/en not_active Abandoned
- 2005-07-27 JP JP2006531414A patent/JPWO2006025164A1/ja active Pending
- 2005-07-27 WO PCT/JP2005/013733 patent/WO2006025164A1/ja active Application Filing
- 2005-08-15 TW TW094127678A patent/TW200614340A/zh unknown
Also Published As
Publication number | Publication date |
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TW200614340A (en) | 2006-05-01 |
JPWO2006025164A1 (ja) | 2008-05-08 |
KR100829335B1 (ko) | 2008-05-13 |
WO2006025164A1 (ja) | 2006-03-09 |
US20080096395A1 (en) | 2008-04-24 |
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