KR20060129155A - 최소 선폭의 균일성 증가 기판 패턴 방법 - Google Patents
최소 선폭의 균일성 증가 기판 패턴 방법 Download PDFInfo
- Publication number
- KR20060129155A KR20060129155A KR1020067002468A KR20067002468A KR20060129155A KR 20060129155 A KR20060129155 A KR 20060129155A KR 1020067002468 A KR1020067002468 A KR 1020067002468A KR 20067002468 A KR20067002468 A KR 20067002468A KR 20060129155 A KR20060129155 A KR 20060129155A
- Authority
- KR
- South Korea
- Prior art keywords
- exposure
- path
- exposed
- dose
- paths
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 67
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 230000005855 radiation Effects 0.000 claims abstract description 15
- 238000000059 patterning Methods 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims description 14
- 239000011248 coating agent Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 230000005670 electromagnetic radiation Effects 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 21
- 239000002253 acid Substances 0.000 description 63
- 238000009792 diffusion process Methods 0.000 description 44
- 230000000694 effects Effects 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 24
- 238000010511 deprotection reaction Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 11
- 238000007639 printing Methods 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 150000001412 amines Chemical class 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 229920000642 polymer Polymers 0.000 description 9
- 238000001459 lithography Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 150000007513 acids Chemical class 0.000 description 6
- 230000009471 action Effects 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 230000002441 reversible effect Effects 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 229920003986 novolac Polymers 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 150000002500 ions Chemical group 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 2
- 239000003377 acid catalyst Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000000025 interference lithography Methods 0.000 description 2
- -1 krypton ion Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 238000007557 optical granulometry Methods 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 101000873785 Homo sapiens mRNA-decapping enzyme 1A Proteins 0.000 description 1
- 241000511976 Hoya Species 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000004036 acetal group Chemical group 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- TUVYSBJZBYRDHP-UHFFFAOYSA-N acetic acid;methoxymethane Chemical compound COC.CC(O)=O TUVYSBJZBYRDHP-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- UIZLQMLDSWKZGC-UHFFFAOYSA-N cadmium helium Chemical compound [He].[Cd] UIZLQMLDSWKZGC-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical class C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 229920001600 hydrophobic polymer Polymers 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 102100035856 mRNA-decapping enzyme 1A Human genes 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- DETAHNVSLBCZAA-ARJGXJLFSA-N photo product Chemical compound C[C@@H]([C@]12O)[C@@H](OC(C)=O)[C@@]3(OC(C)=O)C(C)(C)C3[C@@H]2C2[C@]3(COC(C)=O)C[C@]4(O)[C@H]1C2[C@@]3(C)C4=O DETAHNVSLBCZAA-ARJGXJLFSA-N 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 125000006239 protecting group Chemical group 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- KOFQUBYAUWJFIT-UHFFFAOYSA-M triphenylsulfanium;hydroxide Chemical compound [OH-].C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 KOFQUBYAUWJFIT-UHFFFAOYSA-M 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
- G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/634,152 | 2003-08-04 | ||
| US10/634,152 US7186486B2 (en) | 2003-08-04 | 2003-08-04 | Method to pattern a substrate |
| US55387404P | 2004-03-17 | 2004-03-17 | |
| US60/553,874 | 2004-03-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20060129155A true KR20060129155A (ko) | 2006-12-15 |
Family
ID=34119184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020067002468A Withdrawn KR20060129155A (ko) | 2003-08-04 | 2004-08-04 | 최소 선폭의 균일성 증가 기판 패턴 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7186486B2 (enExample) |
| EP (1) | EP1652007B1 (enExample) |
| JP (1) | JP2007501431A (enExample) |
| KR (1) | KR20060129155A (enExample) |
| DE (1) | DE602004021392D1 (enExample) |
| WO (1) | WO2005013007A1 (enExample) |
Families Citing this family (76)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE0104238D0 (sv) * | 2001-12-14 | 2001-12-14 | Micronic Laser Systems Ab | Method and apparatus for patterning a workpiece |
| US20030233630A1 (en) * | 2001-12-14 | 2003-12-18 | Torbjorn Sandstrom | Methods and systems for process control of corner feature embellishment |
| US7186486B2 (en) * | 2003-08-04 | 2007-03-06 | Micronic Laser Systems Ab | Method to pattern a substrate |
| US7101816B2 (en) * | 2003-12-29 | 2006-09-05 | Tokyo Electron Limited | Methods for adaptive real time control of a thermal processing system |
| WO2005079360A2 (en) * | 2004-02-12 | 2005-09-01 | Ionwerks, Inc. | Advanced optics for rapidly patterned lasser profiles in analytical spectrometry |
| EP1719018A1 (en) * | 2004-02-25 | 2006-11-08 | Micronic Laser Systems Ab | Methods for exposing patterns and emulating masks in optical maskless lithography |
| US20050214674A1 (en) * | 2004-03-25 | 2005-09-29 | Yu Sui | Positive-working photoimageable bottom antireflective coating |
| DE102004022329B3 (de) * | 2004-05-06 | 2005-12-29 | Infineon Technologies Ag | Verfahren zur dynamischen Dosisanpassung in einem lithographischen Projektionsapparat und Projektionsapparat |
| US7632625B2 (en) * | 2004-05-25 | 2009-12-15 | Roberts David H | Method of pre-exposing relief image printing plate |
| JP4908756B2 (ja) * | 2004-12-22 | 2012-04-04 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
| US7403265B2 (en) * | 2005-03-30 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method utilizing data filtering |
| US7718326B2 (en) * | 2005-06-17 | 2010-05-18 | Vincent E Stenger | Seamless stitching of patterns formed by interference lithography |
| US7927779B2 (en) | 2005-06-30 | 2011-04-19 | Taiwan Semiconductor Manufacturing Companym, Ltd. | Water mark defect prevention for immersion lithography |
| US8048589B2 (en) * | 2005-07-30 | 2011-11-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Phase shift photomask performance assurance method |
| US8383322B2 (en) * | 2005-08-05 | 2013-02-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography watermark reduction |
| US20070046954A1 (en) * | 2005-08-24 | 2007-03-01 | Asml Netherlands B.V. | Method of verifying consistent measurement between a plurality of CD metrology tools |
| US7993808B2 (en) | 2005-09-30 | 2011-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | TARC material for immersion watermark reduction |
| KR100843890B1 (ko) * | 2005-11-07 | 2008-07-03 | 주식회사 하이닉스반도체 | 리소그래피 공정의 시뮬레이션 방법 |
| US8518628B2 (en) | 2006-09-22 | 2013-08-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Surface switchable photoresist |
| US7917244B2 (en) * | 2007-03-14 | 2011-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for reducing critical dimension side-to-side tilting error |
| JP2009010079A (ja) * | 2007-06-27 | 2009-01-15 | Canon Inc | 露光装置 |
| WO2009011119A1 (ja) * | 2007-07-13 | 2009-01-22 | Nikon Corporation | パターン形成方法及び装置、露光方法及び装置、並びにデバイス製造方法及びデバイス |
| US8088548B2 (en) | 2007-10-23 | 2012-01-03 | Az Electronic Materials Usa Corp. | Bottom antireflective coating compositions |
| US20090199152A1 (en) * | 2008-02-06 | 2009-08-06 | Micronic Laser Systems Ab | Methods and apparatuses for reducing mura effects in generated patterns |
| EP2269108B1 (en) * | 2008-04-24 | 2017-11-01 | Micronic Mydata AB | Spatial light modulator with structured mirror surfaces |
| US8492288B2 (en) * | 2008-06-10 | 2013-07-23 | Micron Technology, Inc. | Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates |
| US9341936B2 (en) | 2008-09-01 | 2016-05-17 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
| US8473875B2 (en) | 2010-10-13 | 2013-06-25 | D2S, Inc. | Method and system for forming high accuracy patterns using charged particle beam lithography |
| US8039176B2 (en) | 2009-08-26 | 2011-10-18 | D2S, Inc. | Method for fracturing and forming a pattern using curvilinear characters with charged particle beam lithography |
| US8057970B2 (en) | 2008-09-01 | 2011-11-15 | D2S, Inc. | Method and system for forming circular patterns on a surface |
| US20120219886A1 (en) | 2011-02-28 | 2012-08-30 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithography with variable pattern dosage |
| US9323140B2 (en) | 2008-09-01 | 2016-04-26 | D2S, Inc. | Method and system for forming a pattern on a reticle using charged particle beam lithography |
| US7901850B2 (en) | 2008-09-01 | 2011-03-08 | D2S, Inc. | Method and system for design of a reticle to be manufactured using variable shaped beam lithography |
| US8455176B2 (en) * | 2008-11-12 | 2013-06-04 | Az Electronic Materials Usa Corp. | Coating composition |
| JP5009275B2 (ja) * | 2008-12-05 | 2012-08-22 | 富士フイルム株式会社 | マルチビーム露光走査方法及び装置並びに印刷版の製造方法 |
| US20120278770A1 (en) | 2011-04-26 | 2012-11-01 | D2S, Inc. | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
| US9448473B2 (en) | 2009-08-26 | 2016-09-20 | D2S, Inc. | Method for fracturing and forming a pattern using shaped beam charged particle beam lithography |
| US9164372B2 (en) | 2009-08-26 | 2015-10-20 | D2S, Inc. | Method and system for forming non-manhattan patterns using variable shaped beam lithography |
| US8632948B2 (en) * | 2009-09-30 | 2014-01-21 | Az Electronic Materials Usa Corp. | Positive-working photoimageable bottom antireflective coating |
| US20110086312A1 (en) * | 2009-10-09 | 2011-04-14 | Dammel Ralph R | Positive-Working Photoimageable Bottom Antireflective Coating |
| WO2011104174A1 (en) * | 2010-02-23 | 2011-09-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8539395B2 (en) | 2010-03-05 | 2013-09-17 | Micronic Laser Systems Ab | Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image |
| US20120320352A1 (en) * | 2010-03-31 | 2012-12-20 | Ichirou Miyagawa | Multibeam exposure scanning method and apparatus, and method of manufacturing printing plate |
| JP5220793B2 (ja) * | 2010-03-31 | 2013-06-26 | 富士フイルム株式会社 | マルチビーム露光走査方法及び装置並びに印刷版の製造方法 |
| JP5220794B2 (ja) * | 2010-03-31 | 2013-06-26 | 富士フイルム株式会社 | マルチビーム露光走査方法及び装置並びに印刷版の製造方法 |
| US9715995B1 (en) * | 2010-07-30 | 2017-07-25 | Kla-Tencor Corporation | Apparatus and methods for electron beam lithography using array cathode |
| JP5662756B2 (ja) * | 2010-10-08 | 2015-02-04 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| US8703389B2 (en) | 2011-06-25 | 2014-04-22 | D2S, Inc. | Method and system for forming patterns with charged particle beam lithography |
| US9057956B2 (en) | 2011-02-28 | 2015-06-16 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
| US9612530B2 (en) | 2011-02-28 | 2017-04-04 | D2S, Inc. | Method and system for design of enhanced edge slope patterns for charged particle beam lithography |
| US9034542B2 (en) | 2011-06-25 | 2015-05-19 | D2S, Inc. | Method and system for forming patterns with charged particle beam lithography |
| US8614047B2 (en) | 2011-08-26 | 2013-12-24 | International Business Machines Corporation | Photodecomposable bases and photoresist compositions |
| KR101633761B1 (ko) | 2012-01-17 | 2016-06-27 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스 제조 방법 |
| WO2013158573A1 (en) | 2012-04-18 | 2013-10-24 | D2S, Inc. | Method and system for forming patterns using charged particle beam lithograph |
| US9343267B2 (en) | 2012-04-18 | 2016-05-17 | D2S, Inc. | Method and system for dimensional uniformity using charged particle beam lithography |
| KR20150001834A (ko) * | 2012-04-18 | 2015-01-06 | 디2에스, 인코포레이티드 | 하전 입자 빔 리소그래피를 사용한 임계 치수 균일성을 위한 방법 및 시스템 |
| US8966409B2 (en) | 2012-12-20 | 2015-02-24 | Micron Technology, Inc. | Methods of forming a mask and methods of correcting intra-field variation across a mask design used in photolithographic processing |
| US9645391B2 (en) | 2013-11-27 | 2017-05-09 | Tokyo Electron Limited | Substrate tuning system and method using optical projection |
| JP6321189B2 (ja) | 2014-01-27 | 2018-05-09 | 東京エレクトロン株式会社 | パターン化膜の臨界寸法をシフトするシステムおよび方法 |
| WO2015127459A1 (en) * | 2014-02-24 | 2015-08-27 | Tokyo Electron Limited | Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes |
| US9519227B2 (en) | 2014-02-24 | 2016-12-13 | Tokyo Electron Limited | Metrology for measurement of photosensitizer concentration within photo-sensitized chemically-amplified resist (PS-CAR) |
| KR101845188B1 (ko) | 2014-02-24 | 2018-04-03 | 도쿄엘렉트론가부시키가이샤 | 광 민감형 화학적 증폭 레지스트 내에 산 산탄 잡음으로 복제되는 euv 산탄 잡음의 완화 |
| KR102402422B1 (ko) | 2014-02-25 | 2022-05-25 | 도쿄엘렉트론가부시키가이샤 | 현상 가능한 하부 반사 방지 코팅 및 염색된 주입물 레지스트를 위한 화학 증폭 방법 및 기술 |
| KR102447144B1 (ko) * | 2015-01-09 | 2022-09-26 | 삼성전자주식회사 | 포토 마스크 제조 방법, 포토레지스트 패턴 형성 방법 및 반도체 장치의 제조 방법 |
| JP2016184605A (ja) * | 2015-03-25 | 2016-10-20 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び描画データ作成方法 |
| US10048594B2 (en) | 2016-02-19 | 2018-08-14 | Tokyo Electron Limited | Photo-sensitized chemically amplified resist (PS-CAR) model calibration |
| US10429745B2 (en) | 2016-02-19 | 2019-10-01 | Osaka University | Photo-sensitized chemically amplified resist (PS-CAR) simulation |
| TWI662360B (zh) | 2016-05-13 | 2019-06-11 | Tokyo Electron Limited | 藉由使用光劑之臨界尺寸控制 |
| CN109313394B (zh) | 2016-05-13 | 2021-07-02 | 东京毅力科创株式会社 | 使用光敏化学品或光敏化学放大抗蚀剂的临界尺寸控制 |
| KR102329264B1 (ko) * | 2018-02-22 | 2021-11-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 디스플레이 제조를 위한 기판에 대한 자동화된 임계 치수 측정을 위한 방법, 디스플레이 제조를 위한 대면적 기판을 검사하는 방법, 디스플레이 제조를 위한 대면적 기판을 검사하기 위한 장치, 및 그 동작 방법 |
| TWI789405B (zh) * | 2018-07-12 | 2023-01-11 | 聯華電子股份有限公司 | 光罩 |
| US10761430B2 (en) * | 2018-09-13 | 2020-09-01 | Applied Materials, Inc. | Method to enhance the resolution of maskless lithography while maintaining a high image contrast |
| US12025919B2 (en) * | 2018-11-30 | 2024-07-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of storing photoresist coated substrates and semiconductor substrate container arrangement |
| US10545409B1 (en) | 2019-05-30 | 2020-01-28 | International Business Machines Corporation | Dynamic adjustment of post exposure bake during lithography utilizing real-time feedback for wafer exposure delay |
| KR102898764B1 (ko) | 2019-08-16 | 2025-12-10 | 도쿄엘렉트론가부시키가이샤 | 확률 중심 결함 교정을 위한 방법 및 공정 |
| JP7471175B2 (ja) * | 2020-08-20 | 2024-04-19 | 株式会社オーク製作所 | 露光装置および露光方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4879605A (en) | 1988-02-29 | 1989-11-07 | Ateq Corporation | Rasterization system utilizing an overlay of bit-mapped low address resolution databases |
| US6348907B1 (en) | 1989-08-22 | 2002-02-19 | Lawson A. Wood | Display apparatus with digital micromirror device |
| US5148157A (en) | 1990-09-28 | 1992-09-15 | Texas Instruments Incorporated | Spatial light modulator with full complex light modulation capability |
| US5103101A (en) | 1991-03-04 | 1992-04-07 | Etec Systems, Inc. | Multiphase printing for E-beam lithography |
| US5304441A (en) * | 1992-12-31 | 1994-04-19 | International Business Machines Corporation | Method of optimizing exposure of photoresist by patterning as a function of thermal modeling |
| US5467146A (en) | 1994-03-31 | 1995-11-14 | Texas Instruments Incorporated | Illumination control unit for display system with spatial light modulator |
| JP4006478B2 (ja) | 1994-08-04 | 2007-11-14 | テキサス インスツルメンツ インコーポレイテッド | 表示システム |
| US5835256A (en) | 1995-06-19 | 1998-11-10 | Reflectivity, Inc. | Reflective spatial light modulator with encapsulated micro-mechanical elements |
| US5702559A (en) * | 1995-07-13 | 1997-12-30 | B&H Manufacturing Company, Inc. | Method and apparatus for applying a tactilely distinguishable marking on an article |
| US5621216A (en) * | 1996-04-26 | 1997-04-15 | International Business Machines Corporation | Hardware/software implementation for multipass E-beam mask writing |
| US5774254A (en) | 1997-06-26 | 1998-06-30 | Xerox Corporation | Fault tolerant light modulator display system |
| JP2001092104A (ja) * | 1997-12-26 | 2001-04-06 | Nikon Corp | フォトマスクの製造方法、及びデバイスの製造方法 |
| SE9800665D0 (sv) | 1998-03-02 | 1998-03-02 | Micronic Laser Systems Ab | Improved method for projection printing using a micromirror SLM |
| US6142641A (en) | 1998-06-18 | 2000-11-07 | Ultratech Stepper, Inc. | Four-mirror extreme ultraviolet (EUV) lithography projection system |
| JP2000349016A (ja) * | 1999-06-07 | 2000-12-15 | Sony Corp | 描画方法、露光用マスク、露光用マスクの製造方法、並びに、半導体装置及びその製造方法 |
| SE516914C2 (sv) | 1999-09-09 | 2002-03-19 | Micronic Laser Systems Ab | Metoder och rastrerare för högpresterande mönstergenerering |
| AU2001255614A1 (en) | 2000-06-01 | 2001-12-11 | Applied Materials, Inc. | High throughput multipass printing with lithographic quality |
| US7302111B2 (en) * | 2001-09-12 | 2007-11-27 | Micronic Laser Systems A.B. | Graphics engine for high precision lithography |
| SE0104238D0 (sv) * | 2001-12-14 | 2001-12-14 | Micronic Laser Systems Ab | Method and apparatus for patterning a workpiece |
| US7186486B2 (en) * | 2003-08-04 | 2007-03-06 | Micronic Laser Systems Ab | Method to pattern a substrate |
-
2003
- 2003-08-04 US US10/634,152 patent/US7186486B2/en not_active Expired - Lifetime
-
2004
- 2004-08-04 WO PCT/SE2004/001161 patent/WO2005013007A1/en not_active Ceased
- 2004-08-04 JP JP2006522529A patent/JP2007501431A/ja active Pending
- 2004-08-04 EP EP04749193A patent/EP1652007B1/en not_active Expired - Lifetime
- 2004-08-04 KR KR1020067002468A patent/KR20060129155A/ko not_active Withdrawn
- 2004-08-04 DE DE602004021392T patent/DE602004021392D1/de not_active Expired - Lifetime
- 2004-08-04 US US10/911,412 patent/US7150949B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US20050032002A1 (en) | 2005-02-10 |
| US20050053850A1 (en) | 2005-03-10 |
| WO2005013007A1 (en) | 2005-02-10 |
| EP1652007A1 (en) | 2006-05-03 |
| US7186486B2 (en) | 2007-03-06 |
| US7150949B2 (en) | 2006-12-19 |
| DE602004021392D1 (de) | 2009-07-16 |
| EP1652007B1 (en) | 2009-06-03 |
| JP2007501431A (ja) | 2007-01-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1652007B1 (en) | Further method to pattern a substrate | |
| CN1945444B (zh) | 对光刻衬底上的正色调抗蚀剂层进行构图的方法 | |
| JP4481156B2 (ja) | ハイパーサンプル相関に基づくリソグラフィ処理の最適化 | |
| US7981595B2 (en) | Reduced pitch multiple exposure process | |
| KR100890665B1 (ko) | 이중층 레티클 블랭크 및 이것의 제조방법 | |
| JP3972035B2 (ja) | 検査方法とデバイス製造方法 | |
| JP4036669B2 (ja) | リソグラフィ製造法およびリソグラフィ投影装置 | |
| JP4036884B2 (ja) | 基板露光方法 | |
| JP2003022968A (ja) | リソグラフィ装置の較正方法、リソグラフィ装置の較正に使用するマスク、リソグラフィ装置、デバイス製造方法、該デバイス製造方法により製造されたデバイス | |
| JP2004200680A (ja) | 検査方法およびデバイス製造方法 | |
| TWI441239B (zh) | 製造微影元件的方法、微影單元及電腦程式產品 | |
| JP2005101615A (ja) | レチクルに依存しないレチクル・ステージの較正 | |
| US7352451B2 (en) | System method and structure for determining focus accuracy | |
| US20040063003A1 (en) | Method of producing a patterned photoresist used to prepare high performance photomasks | |
| US11854854B2 (en) | Method for calibrating alignment of wafer and lithography system | |
| Brunner et al. | A new long range proximity effect in chemically amplified photoresist processes: chemical flare | |
| Pawloski et al. | Comparative study of mask architectures for EUV lithography | |
| JP2003332201A (ja) | 露光方法および露光装置 | |
| Fosshaug et al. | Influence of writing strategy on CD control for the spatial light modulator-based Sigma7300 DUV laser pattern generator | |
| Albelo et al. | Process development for 257-nm photomask fabrication using environmentally stable chemically amplified photoresists | |
| KR100596276B1 (ko) | 감광막 패턴 형성 방법 | |
| Fuller et al. | Photoresist processing for high-resolution DUV lithography at 257 nm | |
| Boettiger et al. | Aerial image analysis of quarter-micrometer patterns on a 0.5-NA excimer stepper | |
| Joshi | Characterisation of the impact of scattered light and power illumination nonuniformity on semiconductor processes | |
| La Fontaine et al. | Comparative study of mask architectures for EUV lithography |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20060204 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |