JP2007501431A - 基板にパターン形成するための改善された方法 - Google Patents

基板にパターン形成するための改善された方法 Download PDF

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Publication number
JP2007501431A
JP2007501431A JP2006522529A JP2006522529A JP2007501431A JP 2007501431 A JP2007501431 A JP 2007501431A JP 2006522529 A JP2006522529 A JP 2006522529A JP 2006522529 A JP2006522529 A JP 2006522529A JP 2007501431 A JP2007501431 A JP 2007501431A
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Prior art keywords
exposure
pass
dose
workpiece
resist
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Pending
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JP2006522529A
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Japanese (ja)
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JP2007501431A5 (enExample
Inventor
ウォルフォード、ジョナサン
アスケブイェル、ペル
エクルンド、ロバート
フォッシャウグ、ハンス
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マイクロニック レーザー システムズ アクチボラゲット
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Publication of JP2007501431A publication Critical patent/JP2007501431A/ja
Publication of JP2007501431A5 publication Critical patent/JP2007501431A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00—Photographic processes or agents therefor; Regeneration of such processing agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006522529A 2003-08-04 2004-08-04 基板にパターン形成するための改善された方法 Pending JP2007501431A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/634,152 US7186486B2 (en) 2003-08-04 2003-08-04 Method to pattern a substrate
US55387404P 2004-03-17 2004-03-17
PCT/SE2004/001161 WO2005013007A1 (en) 2003-08-04 2004-08-04 Further method to pattern a substrate

Publications (2)

Publication Number Publication Date
JP2007501431A true JP2007501431A (ja) 2007-01-25
JP2007501431A5 JP2007501431A5 (enExample) 2007-07-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006522529A Pending JP2007501431A (ja) 2003-08-04 2004-08-04 基板にパターン形成するための改善された方法

Country Status (6)

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US (2) US7186486B2 (enExample)
EP (1) EP1652007B1 (enExample)
JP (1) JP2007501431A (enExample)
KR (1) KR20060129155A (enExample)
DE (1) DE602004021392D1 (enExample)
WO (1) WO2005013007A1 (enExample)

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JP2006285243A (ja) * 2005-03-30 2006-10-19 Asml Netherlands Bv データフィルタ処理を利用したリソグラフィ装置及びデバイス製造法
WO2010064730A1 (en) * 2008-12-05 2010-06-10 Fujifilm Corporation Multi-beam exposure scanning method and apparatus, and method for manufacturing printing plate
WO2011122703A1 (en) * 2010-03-31 2011-10-06 Fujifilm Corporation Multibeam exposure scanning method and apparatus, and method of manufacturing printing plate
JP2011215275A (ja) * 2010-03-31 2011-10-27 Fujifilm Corp マルチビーム露光走査方法及び装置並びに印刷版の製造方法
JP2011215274A (ja) * 2010-03-31 2011-10-27 Fujifilm Corp マルチビーム露光走査方法及び装置並びに印刷版の製造方法
JP2013191901A (ja) * 2007-07-13 2013-09-26 Nikon Corp パターン形成方法及びパターン形成装置、並びにデバイス製造方法
WO2015112802A1 (en) * 2014-01-27 2015-07-30 Tokyo Electron Limited System and method for shifting critical dimensions of patterned films
WO2015127348A1 (en) * 2014-02-24 2015-08-27 Tokyo Electron Limited Mitigation of euv shot noise replicating into acid shot noise in photo-sensitized chemically-amplified resist
US9291902B2 (en) 2010-03-05 2016-03-22 Mycronic AB Method and apparatus for merging multiple geometrical pixel images and generating a single modulator pixel image
US9519227B2 (en) 2014-02-24 2016-12-13 Tokyo Electron Limited Metrology for measurement of photosensitizer concentration within photo-sensitized chemically-amplified resist (PS-CAR)
US9618848B2 (en) 2014-02-24 2017-04-11 Tokyo Electron Limited Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
US9645391B2 (en) 2013-11-27 2017-05-09 Tokyo Electron Limited Substrate tuning system and method using optical projection
US10020195B2 (en) 2014-02-25 2018-07-10 Tokyo Electron Limited Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
US10096528B2 (en) 2016-05-13 2018-10-09 Tokyo Electron Limited Critical dimension control by use of a photo agent
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10551743B2 (en) 2016-05-13 2020-02-04 Tokyo Electron Limited Critical dimension control by use of photo-sensitized chemicals or photo-sensitized chemically amplified resist
US11163236B2 (en) 2019-08-16 2021-11-02 Tokyo Electron Limited Method and process for stochastic driven detectivity healing
CN114077165A (zh) * 2020-08-20 2022-02-22 株式会社Orc制作所 曝光装置和曝光方法

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US20030233630A1 (en) * 2001-12-14 2003-12-18 Torbjorn Sandstrom Methods and systems for process control of corner feature embellishment
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US7718326B2 (en) * 2005-06-17 2010-05-18 Vincent E Stenger Seamless stitching of patterns formed by interference lithography
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US20120219886A1 (en) 2011-02-28 2012-08-30 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
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JP2011215274A (ja) * 2010-03-31 2011-10-27 Fujifilm Corp マルチビーム露光走査方法及び装置並びに印刷版の製造方法
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WO2015112802A1 (en) * 2014-01-27 2015-07-30 Tokyo Electron Limited System and method for shifting critical dimensions of patterned films
US10534266B2 (en) 2014-02-24 2020-01-14 Tokyo Electron Limited Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
US9519227B2 (en) 2014-02-24 2016-12-13 Tokyo Electron Limited Metrology for measurement of photosensitizer concentration within photo-sensitized chemically-amplified resist (PS-CAR)
WO2015127348A1 (en) * 2014-02-24 2015-08-27 Tokyo Electron Limited Mitigation of euv shot noise replicating into acid shot noise in photo-sensitized chemically-amplified resist
US9618848B2 (en) 2014-02-24 2017-04-11 Tokyo Electron Limited Methods and techniques to use with photosensitized chemically amplified resist chemicals and processes
US10020195B2 (en) 2014-02-25 2018-07-10 Tokyo Electron Limited Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
US12165870B2 (en) 2014-02-25 2024-12-10 Tokyo Electron Limited Chemical amplification methods and techniques for developable bottom anti-reflective coatings and dyed implant resists
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
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US10522428B2 (en) 2016-05-13 2019-12-31 Tokyo Electron Limited Critical dimension control by use of a photo agent
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US10096528B2 (en) 2016-05-13 2018-10-09 Tokyo Electron Limited Critical dimension control by use of a photo agent
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