KR20060076698A - 반도체 처리용 성막 장치와 사용 방법 - Google Patents
반도체 처리용 성막 장치와 사용 방법 Download PDFInfo
- Publication number
- KR20060076698A KR20060076698A KR1020050130286A KR20050130286A KR20060076698A KR 20060076698 A KR20060076698 A KR 20060076698A KR 1020050130286 A KR1020050130286 A KR 1020050130286A KR 20050130286 A KR20050130286 A KR 20050130286A KR 20060076698 A KR20060076698 A KR 20060076698A
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- Prior art keywords
- gas
- film
- reaction chamber
- reaction tube
- cleaning
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 94
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 238000006243 chemical reaction Methods 0.000 claims abstract description 195
- 238000004140 cleaning Methods 0.000 claims abstract description 103
- 230000008569 process Effects 0.000 claims abstract description 67
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 239000006227 byproduct Substances 0.000 claims abstract description 52
- 239000000460 chlorine Substances 0.000 claims abstract description 49
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 44
- 238000012545 processing Methods 0.000 claims abstract description 41
- 238000010926 purge Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 24
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 14
- 239000011737 fluorine Substances 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 199
- 229910052735 hafnium Inorganic materials 0.000 claims description 41
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 34
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 32
- 238000010438 heat treatment Methods 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 8
- -1 hafnium aluminate Chemical class 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 7
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 6
- 229910021529 ammonia Inorganic materials 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052914 metal silicate Inorganic materials 0.000 claims description 3
- 238000005108 dry cleaning Methods 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 2
- 238000003860 storage Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 80
- 235000012431 wafers Nutrition 0.000 description 61
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 38
- 229910052757 nitrogen Inorganic materials 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
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- 229910004129 HfSiO Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000003085 diluting agent Substances 0.000 description 5
- 229910001873 dinitrogen Inorganic materials 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
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- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
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- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 230000006837 decompression Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- QHEDSQMUHIMDOL-UHFFFAOYSA-J hafnium(4+);tetrafluoride Chemical compound F[Hf](F)(F)F QHEDSQMUHIMDOL-UHFFFAOYSA-J 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WFKXSACQTSUPRH-UHFFFAOYSA-N CCCC[Hf] Chemical compound CCCC[Hf] WFKXSACQTSUPRH-UHFFFAOYSA-N 0.000 description 2
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 150000001804 chlorine Chemical class 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZYLGGWPMIDHSEZ-UHFFFAOYSA-N dimethylazanide;hafnium(4+) Chemical compound [Hf+4].C[N-]C.C[N-]C.C[N-]C.C[N-]C ZYLGGWPMIDHSEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002363 hafnium compounds Chemical class 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
- 150000003755 zirconium compounds Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- H01L21/02148—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing hafnium, e.g. HfSiOx or HfSiON
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- H01L21/02142—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
- H01L21/02159—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing zirconium, e.g. ZrSiOx
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- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02194—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing more than one metal element
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31641—Deposition of Zirconium oxides, e.g. ZrO2
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- H—ELECTRICITY
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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- H01L21/31604—Deposition from a gas or vapour
- H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
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Abstract
Description
Claims (20)
- 반도체 처리용 성막 장치의 사용 방법이며,상기 성막 장치의 반응실 내면에 부착하는 고유전율 재료를 주성분으로 하는 부생성물막을 클리닝 가스에 의해 처리하는 공정과, 여기서 상기 반응실 내에 상기 클리닝 가스를 공급하는 동시에 상기 반응실 내를 제1 온도 및 제1 압력으로 설정하는 것과, 상기 클리닝 가스는 불소를 포함하는 일 없이 염소를 포함하고, 상기 제1 온도 및 상기 제1 압력은 상기 클리닝 가스 중의 염소가 활성화되도록 설정되는 것을 구비하는 반도체 처리용 성막 장치의 사용 방법.
- 제1항에 있어서, 상기 제1 온도는 600 내지 1050 ℃의 범위 내인 반도체 처리용 성막 장치의 사용 방법.
- 제1항에 있어서, 상기 제1 압력은 6650 ㎩(50 Torr) 내지 상압의 범위 내인 반도체 처리용 성막 장치의 사용 방법.
- 제1항에 있어서, 상기 고유전율 재료는 금속 실리케이트이고, 상기 부생성물막을 처리하는 공정은 상기 부생성물막의 실리케이트 성분을 남긴 상태에서 금속 성분을 제거하는 공정인 반도체 처리용 성막 장치의 사용 방법.
- 제4항에 있어서, 상기 금속 성분을 제거한 후의 상기 부생성물막을 상기 반응실 내에 불소를 포함하는 클리닝 가스를 공급하여 드라이클리닝에 의해 에칭하는 공정을 더 구비하는 반도체 처리용 성막 장치의 사용 방법.
- 제4항에 있어서, 상기 고유전율 재료는 하프늄실리케이트 또는 지르코늄실리케이트인 반도체 처리용 성막 장치의 사용 방법.
- 제2항에 있어서, 상기 고유전율 재료는 산화하프늄, 하프늄알루미네이트, 산화지르코늄인 반도체 처리용 성막 장치의 사용 방법.
- 제1항에 있어서, 상기 클리닝 가스는 10 내지 90 용량 %의 염화수소 가스를 포함하는 반도체 처리용 성막 장치의 사용 방법.
- 제1항에 있어서, 상기 부생성물막을 처리하는 공정 후에, 상기 반응실 내에 잔류하는 염소를 후처리 가스에 의해 화학적 반응을 이용하여 제거하는 공정과, 여기서 상기 반응실 내에 상기 후처리 가스를 공급하는 동시에, 상기 반응실 내를 상기 후처리 가스가 활성화하는 제2 온도 및 제2 압력으로 설정하는 것을 구비하는 반도체 처리용 성막 장치의 사용 방법.
- 제9항에 있어서, 상기 제2 온도는 600 내지 1000 ℃의 범위 내인 반도체 처 리용 성막 장치의 사용 방법.
- 제9항에 있어서, 상기 제2 압력은 133 ㎩(1 Torr) 내지 1330 ㎩(10 Torr)의 범위 내인 반도체 처리용 성막 장치의 사용 방법.
- 제9항에 있어서, 상기 후처리 가스는 암모니아를 10 내지 100 용량 % 포함하는 반도체 처리용 성막 장치의 사용 방법.
- 제9항에 있어서, 상기 부생성물막을 처리하는 공정과, 상기 잔류하는 염소를 제거하는 공정 사이에 상기 반응실 내를 불활성 가스로 퍼지하는 공정을 더 구비하는 반도체 처리용 성막 장치의 사용 방법.
- 제9항에 있어서, 상기 부생성물막을 처리하는 공정 전에 상기 반응실 내에서 피처리 기판 상에 CVD에 의해 고유전율막을 형성하는 공정을 더 구비하고, 이 사이에 상기 부생성물막이 상기 반응실의 내면에 부착하는 반도체 처리용 성막 장치의 사용 방법.
- 제14항에 있어서, 상기 고유전율막을 형성하는 공정은 하프늄 유기 화합물을 포함하는 제1 성막 가스와, 실란계 가스를 포함하는 제2 성막 가스를 상기 반응실 내에 공급하는 공정을 구비하는 반도체 처리용 성막 장치의 사용 방법.
- 반도체 처리용 성막 장치이며,피처리 기판을 수용하는 반응실과,상기 반응실 내를 가열하는 히터와,상기 반응실 내를 배기하는 배기계와,상기 반응실 내에 상기 피처리 기판 상에 고유전율막을 형성하기 위한 성막 가스를 공급하는 성막 가스 공급계와,상기 반응실 내에 불소를 포함하지 않으면서 또한 염소를 포함하는 클리닝 가스를 공급하는 클리닝 가스 공급계와,상기 장치의 동작을 제어하는 제어부를 구비하고, 상기 제어부는,상기 반응실의 내면에 부착하는 고유전율 재료를 주성분으로 하는 부생성물막을 상기 클리닝 가스에 의해 처리하는 공정과, 여기서 상기 반응실 내에 상기 클리닝 가스를 공급하는 동시에 상기 반응실 내를 제1 온도 및 제1 압력으로 설정하는 것과, 상기 제1 온도 및 상기 제1 압력은 상기 클리닝 가스 중의 염소가 활성화되도록 설정되는 것을 실행하는 반도체 처리용 성막 장치.
- 제16항에 있어서, 상기 장치는 상기 반응실 내에 염소와 화학적으로 반응하는 후처리 가스를 공급하는 후처리 가스 공급계를 더 구비하고, 상기 제어부는 상기 부생성물막을 처리하는 공정 후에 상기 반응실 내에 잔류하는 염소를 상기 후처리 가스에 의해 화학적 반응을 이용하여 제거하는 공정과, 여기서 상기 반응실 내 에 상기 후처리 가스를 공급하는 동시에, 상기 반응실 내를 상기 후처리 가스가 활성화되는 제2 온도 및 제2 압력으로 설정하는 것을 실행하는 반도체 처리용 성막 장치.
- 제17항에 있어서, 상기 제어부는 상기 부생성물막을 처리하는 공정 전에 상기 반응실 내에서 상기 피처리 기판 상에 CVD에 의해 고유전율막을 형성하는 공정을 더 실행하고, 그 사이에 상기 부생성물막이 상기 반응실 내면에 부착하는 반도체 처리용 성막 장치.
- 제16항에 있어서, 상기 고유전율 재료는 금속 실리케이트이고, 상기 부생성물막을 처리하는 공정은 상기 부생성물막의 실리케이트 성분을 남긴 상태에서 금속 성분을 제거하는 공정인 반도체 처리용 성막 장치.
- 프로세서 상에서 실행하기 위한 프로그램 지령을 포함하는 컴퓨터로 판독 가능한 매체이며,상기 프로그램 지령은 프로세서에 의해 실행될 때, 반도체 처리용 성막 장치에,상기 성막 장치의 반응실 내면에 부착하는 고유전율 재료를 주성분으로 하는 부생성물막을 클리닝 가스에 의해 처리하는 공정과, 여기서 상기 반응실 내에 상기 클리닝 가스를 공급하는 동시에 상기 반응실 내를 제1 온도 및 제1 압력으로 설정 하는 것과, 상기 클리닝 가스는 불소를 포함하는 일 없이 염소를 포함하고, 상기 제1 온도 및 상기 제1 압력은 상기 클리닝 가스 중의 염소가 활성화되도록 설정되는 것을 실행시키는 컴퓨터로 판독 가능한 매체.
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-
2005
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- 2005-12-21 US US11/312,760 patent/US7615163B2/en active Active
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KR20200035210A (ko) * | 2018-09-25 | 2020-04-02 | 가부시키가이샤 코쿠사이 엘렉트릭 | 클리닝 방법, 반도체 장치의 제조 방법, 기판 처리 장치, 및 프로그램 |
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US7615163B2 (en) | 2009-11-10 |
TW200636086A (en) | 2006-10-16 |
TWI365919B (en) | 2012-06-11 |
CN1800444B (zh) | 2011-04-13 |
KR100948985B1 (ko) | 2010-03-23 |
US20060137709A1 (en) | 2006-06-29 |
CN1800444A (zh) | 2006-07-12 |
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