KR20060048541A - 반도체 처리용 성막 장치 및 방법 - Google Patents
반도체 처리용 성막 장치 및 방법 Download PDFInfo
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- KR20060048541A KR20060048541A KR1020050055543A KR20050055543A KR20060048541A KR 20060048541 A KR20060048541 A KR 20060048541A KR 1020050055543 A KR1020050055543 A KR 1020050055543A KR 20050055543 A KR20050055543 A KR 20050055543A KR 20060048541 A KR20060048541 A KR 20060048541A
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- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims description 6
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- 230000005279 excitation period Effects 0.000 claims 2
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- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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Abstract
Description
Claims (30)
- 피처리 기판을 수납한 처리 영역 내에 성막용 제1 처리 가스와 상기 제1 처리 가스와 반응하는 제2 처리 가스를 공급하고, CVD에 의해 상기 피처리 기판 상에 박막을 형성하는 반도체 처리용 성막 방법이며,상기 처리 영역에 대한 상기 제1 및 제2 처리 가스의 공급을 행하는 제1 공정과,상기 처리 영역에 대한 상기 제1 및 제2 처리 가스의 공급을 정지하는 제2 공정과,상기 처리 영역에 대한 상기 제2 처리 가스의 공급을 행하는 한편, 상기 처리 영역에 대한 상기 제1 처리 가스의 공급을 정지하는 제3 공정과,상기 처리 영역에 대한 상기 제1 및 제2 처리 가스의 공급을 정지하는 제4 공정을 교대로 구비하는 반도체 처리용 성막 방법.
- 제1항에 있어서, 상기 제3 공정은 상기 제2 처리 가스를 여기(勵起) 기구에 의해 여기한 상태에서 상기 처리 영역에 공급하는 기간을 구비하는 반도체 처리용 성막 방법.
- 제2항에 있어서, 상기 제1 공정은 상기 제2 처리 가스를 상기 여기 기구에 의해 여기하는 기간을 구비하지 않은 반도체 처리용 성막 방법.
- 제2항에 있어서, 상기 제1 공정은 상기 제2 처리 가스를 상기 여기 기구에 의해 여기한 상태에서 상기 처리 영역에 공급하는 기간을 구비하는 반도체 처리용 성막 방법.
- 제2항에 있어서, 상기 여기 기구는 상기 처리 영역과 연통하는 공간 내에서 상기 제2 처리 가스의 공급구와 상기 기판 사이에 배치된 플라즈마 발생 영역을 구비하고, 상기 제2 처리 가스는 상기 플라즈마 발생 영역을 통과할 때에 여기되는 반도체 처리용 성막 방법.
- 제5항에 있어서, 상기 제1 처리 가스는 상기 플라즈마 발생 영역과 상기 기판 사이에서 상기 처리 영역에 공급되는 반도체 처리용 성막 방법.
- 제1항에 있어서, 상기 제2 및 제4 공정의 각각은 상기 처리 영역에 대한 퍼지 가스의 공급을 행하는 기간을 구비하는 반도체 처리용 성막 방법.
- 제1항에 있어서, 상기 박막을 형성하는 공정 중, 상기 처리 영역 내의 배기를 계속하는 반도체 처리용 성막 방법.
- 제1항에 있어서, 상기 제1 처리 가스는 실란계 가스를 포함하고, 상기 제2 처리 가스는 질화 가스 또는 산질화 가스를 포함하는 반도체 처리용 성막 방법.
- 제9항에 있어서, 상기 제1 처리 가스는 디클로로실란, 헥사클로로디실란, 모노실란, 디실란, 헥사메틸디실라잔, 테트라클로로실란, 디시릴아민, 트리시릴아민, 비스터셜브틸아미노실란으로 이루어지는 군으로부터 선택되는 1 이상의 가스를 포함하고, 상기 제2 처리 가스는 암모니아, 질소, 일산화이질소, 일산화질소로 이루어지는 군으로부터 선택되는 1 이상의 가스를 포함하는 반도체 처리용 성막 방법.
- 피처리 기판을 수납한 처리 영역 내에 성막용 제1 처리 가스와 상기 제1 처리 가스와 반응하는 제2 처리 가스와 제1 및 제2 처리 가스 중 어느 것과도 같지 않은 제3 처리 가스를 공급하고, CVD에 의해 상기 피처리 기판 상에 박막을 형성하는 반도체 처리용 성막 방법이며,상기 처리 영역에 대한 상기 제1 및 제3 처리 가스의 공급을 행하는 한편, 상기 처리 영역에 대한 상기 제2 처리 가스의 공급을 정지하는 제1 공정과, 상기 제1 공정은 상기 제3 처리 가스를 여기 기구에 의해 여기한 상태에서 상기 처리 영역에 공급하는 기간을 구비하는 것과,상기 처리 영역에 대한 상기 제1 내지 제3 처리 가스의 공급을 정지하는 제2 공정과,상기 처리 영역에 대한 상기 제2 처리 가스의 공급을 행하는 한편, 상기 처리 영역에 대한 상기 제1 및 제3 처리 가스의 공급을 정지하는 제3 공정과,상기 처리 영역에 대한 상기 제1 내지 제3 처리 가스의 공급을 정지하는 제4 공정을 교대로 구비하는 반도체 처리용 성막 방법.
- 제11항에 있어서, 상기 여기 기구는 상기 처리 영역과 연통하는 공간 내에서 상기 제3 처리 가스의 공급구와 상기 기판 사이에 배치된 플라즈마 발생 영역을 구비하고, 상기 제3 처리 가스는 상기 플라즈마 발생 영역을 통과할 때에 여기되는 반도체 처리용 성막 방법.
- 제12항에 있어서, 상기 제1 처리 가스는 상기 플라즈마 발생 영역과 상기 기판 사이에서 상기 처리 영역에 공급되는 반도체 처리용 성막 방법.
- 제11항에 있어서, 상기 제3 공정은 상기 제2 처리 가스를 상기 여기 기구에 의해 여기한 상태에서 상기 처리 영역에 공급하는 여기 기간을 구비하는 반도체 처리용 성막 방법.
- 제15항에 있어서, 상기 제3 공정은 상기 여기 기간 전에 상기 제2 처리 가스를 상기 여기 기구에 의해 여기하지 않은 상태에서 상기 처리 영역에 공급하는 기간도 구비하는 반도체 처리용 성막 방법.
- 제14항에 있어서, 상기 제2 처리 가스는 상기 제3 처리 가스와 공급구를 공 유하는 반도체 처리용 성막 방법.
- 제11항에 있어서, 상기 제2 및 제4 공정의 각각은 상기 처리 영역에 대한 퍼지 가스의 공급을 행하는 기간을 구비하는 반도체 처리용 성막 방법.
- 제11항에 있어서, 상기 박막을 형성하는 공정 중 상기 처리 영역 내의 배기를 계속하는 반도체 처리용 성막 방법.
- 제11항에 있어서, 상기 제1 처리 가스는 실란계 가스를 포함하고, 상기 제2 처리 가스는 질화 가스 또는 산질화 가스를 포함하고, 상기 제3 처리 가스는 질소 가스, 희박 가스, 산화질소 가스로 이루어지는 군으로부터 선택된 가스를 포함하는 반도체 처리용 성막 방법.
- 제19항에 있어서, 상기 제1 처리 가스는 디클로로실란, 헥사클로로실란, 모노실란, 디실란, 헥사메틸디실라잔, 테트라클로로실란, 디시릴아민, 트리시릴아민, 비스터셜브틸아미노실란으로 이루어지는 군으로부터 선택되는 1 이상의 가스를 포함하고, 상기 제2 처리 가스는 암모니아, 질소, 일산화이질소, 일산화질소로 이루어지는 군으로부터 선택되는 1 이상의 가스를 포함하는 반도체 처리용 성막 방법.
- 피처리 기판을 수납하는 처리 영역을 갖는 처리 용기와,상기 처리 영역 내에서 상기 피처리 기판을 지지하는 지지 부재와,상기 처리 영역 내의 상기 피처리 기판을 가열하는 히터와,상기 처리 영역 내를 배기하는 배기계와,상기 처리 영역에 성막용 제1 처리 가스를 공급하는 제1 처리 가스 공급계와,상기 처리 영역에 상기 제1 처리 가스와 반응하는 제2 처리 가스를 공급하는 제2 처리 가스 공급계와,상기 처리 영역에 공급되는 상기 제2 처리 가스를 선택적으로 여기하는 여기 기구와,상기 장치의 동작을 제어하는 제어부를 구비하는 반도체 처리용 성막 장치.
- 제21항에 있어서, 상기 여기 기구는 상기 처리 영역과 연통하는 공간 내에서 상기 제2 처리 가스의 공급구와 상기 기판 사이에 배치된 플라즈마 발생 영역을 구비하고, 상기 제2 처리 가스는 상기 플라즈마 발생 영역을 통과할 때에 여기되는 반도체 처리용 성막 장치.
- 제22항에 있어서, 상기 플라즈마 발생 영역은 상기 처리 용기에 부설된 전극 및 고주파 전원에 의해 상기 제2 처리 가스의 공급구와 상기 기판 사이에 형성되는 고주파 전계를 구비하는 반도체 처리용 성막 장치.
- 제21항에 있어서, 상기 처리 영역은 복수의 피처리 기판을 상하에 간격을 두고 적층한 상태에서 수납하도록 구성되고, 상기 복수의 피처리 기판은 상기 처리 영역의 주위에 배치된 상기 히터에 의해 가열되는 반도체 처리용 성막 장치.
- 제21항에 있어서, 상기 제1 및 제2 처리 가스는 상기 복수의 피처리 기판에 대해 평행한 가스 흐름을 형성하도록 상기 복수의 피처리 기판에 걸쳐서 상하 방향으로 배열된 복수의 제1 가스 분사 구멍 및 복수의 제2 가스 분사 구멍으로부터 각각 공급되는 반도체 처리용 성막 장치.
- 제21항에 있어서, 상기 제어부는 CVD에 의해 상기 피처리 기판 상에 박막을 형성하기 위해,상기 처리 영역에 대한 상기 제1 및 제2 처리 가스의 공급을 행하는 제1 공정과,상기 처리 영역에 대한 상기 제1 및 제2 처리 가스의 공급을 정지하는 제2 공정과,상기 처리 영역에 대한 상기 제2 처리 가스의 공급을 행하는 한편, 상기 처리 영역에 대한 상기 제1 처리 가스의 공급을 정지하는 제3 공정과,상기 처리 영역에 대한 상기 제1 및 제2 처리 가스의 공급을 정지하는 제4 공정을 교대로 실행하는 반도체 처리용 성막 장치.
- 제21항에 있어서, 상기 처리 영역에 제1 및 제2 처리 가스 중 어느 것과도 같지 않은 제3 처리 가스를 공급하는 제3 처리 가스 공급계를 더 구비하고, 상기 제3 처리 가스는 상기 제2 처리 가스와 공급구를 공유하고 또한 상기 여기 기구에 의해 선택적으로 여기되는 반도체 처리용 성막 장치.
- 제27항에 있어서, 상기 제어부는 CVD에 의해 상기 피처리 기판 상에 박막을 형성하기 위해,상기 처리 영역에 대한 상기 제1 및 제3 처리 가스의 공급을 행하는 한편, 상기 처리 영역에 대한 상기 제2 처리 가스의 공급을 정지하는 제1 공정과, 상기 제1 공정은 상기 제3 처리 가스를 상기 여기 기구에 의해 여기한 상태에서 상기 처리 영역에 공급하는 기간을 구비하는 것과,상기 처리 영역에 대한 상기 제1 내지 제3 처리 가스의 공급을 정지하는 제2 공정과,상기 처리 영역에 대한 상기 제2 처리 가스의 공급을 행하는 한편, 상기 처리 영역에 대한 상기 제1 및 제3 처리 가스의 공급을 정지하는 제3 공정과,상기 처리 영역에 대한 상기 제1 내지 제3 처리 가스의 공급을 정지하는 제4 공정을 교대로 실행하는 반도체 처리용 성막 장치.
- 프로세서상에서 실행하기 위한 프로그램 지령을 포함하는 컴퓨터로 판독 가능한 매체이며,상기 프로그램 지령은 프로세서에 의해 실행될 때, 피처리 기판을 수납한 처리 영역 내에 성막용 제1 처리 가스와 상기 제1 처리 가스와 반응하는 제2 처리 가스를 공급하고, CVD에 의해 상기 피처리 기판 상에 박막을 형성하는 반도체 처리용 성막 장치에,상기 처리 영역에 대한 상기 제1 및 제2 처리 가스의 공급을 행하는 제1 공정과,상기 처리 영역에 대한 상기 제1 및 제2 처리 가스의 공급을 정지하는 제2 공정과,상기 처리 영역에 대한 상기 제2 처리 가스의 공급을 행하는 한편, 상기 처리 영역에 대한 상기 제1 처리 가스의 공급을 정지하는 제3 공정과,상기 처리 영역에 대한 상기 제1 및 제2 처리 가스의 공급을 정지하는 제4 공정을 교대로 실행시키는 컴퓨터로 판독 가능한 매체.
- 프로세서상에서 실행하기 위한 프로그램 지령을 포함하는 컴퓨터로 판독 가능한 매체이며,상기 프로그램 지령은 프로세서에 의해 실행될 때, 피처리 기판을 수납한 처리 영역 내에 성막용 제1 처리 가스와 상기 제1 처리 가스와 반응하는 제2 처리 가스와 제1 및 제2 처리 가스 중 어느 것과도 같지 않은 제3 처리 가스를 공급하고, CVD에 의해 상기 피처리 기판 상에 박막을 형성하는 반도체 처리용 성막 장치에,상기 처리 영역에 대한 상기 제1 및 제3 처리 가스의 공급을 행하는 한편, 상기 처리 영역에 대한 상기 제2 처리 가스의 공급을 정지하는 제1 공정과, 상기 제1 공정은 상기 제3 처리 가스를 여기 기구에 의해 여기한 상태에서 상기 처리 영역에 공급하는 기간을 구비하는 것과,상기 처리 영역에 대한 상기 제1 내지 제3 처리 가스의 공급을 정지하는 제2 공정과,상기 처리 영역에 대한 상기 제2 처리 가스의 공급을 행하는 한편, 상기 처리 영역에 대한 상기 제1 및 제3 처리 가스의 공급을 정지하는 제3 공정과,상기 처리 영역에 대한 상기 제1 내지 제3 처리 가스의 공급을 정지하는 제4 공정을 교대로 실행시키는 컴퓨터로 판독 가능한 매체.
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US8119544B2 (en) | 2008-01-12 | 2012-02-21 | Tokyo Electron Limited | Film formation method and apparatus for semiconductor process |
KR101146397B1 (ko) * | 2008-01-12 | 2012-05-17 | 도쿄엘렉트론가부시키가이샤 | 반도체 처리용 성막 방법 및 장치와, 컴퓨터로 판독 가능한매체 |
KR101105130B1 (ko) * | 2008-01-19 | 2012-01-16 | 도쿄엘렉트론가부시키가이샤 | 반도체 처리용 성막 방법 및 장치 |
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TWI440087B (zh) | 2014-06-01 |
US20050287775A1 (en) | 2005-12-29 |
JP4396547B2 (ja) | 2010-01-13 |
US7300885B2 (en) | 2007-11-27 |
KR100954243B1 (ko) | 2010-04-23 |
JP2006049809A (ja) | 2006-02-16 |
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