KR20050074511A - 포토레지스트를 제거하기 위한 초임계 이산화탄소/케미컬조성물 - Google Patents

포토레지스트를 제거하기 위한 초임계 이산화탄소/케미컬조성물 Download PDF

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Publication number
KR20050074511A
KR20050074511A KR1020057007455A KR20057007455A KR20050074511A KR 20050074511 A KR20050074511 A KR 20050074511A KR 1020057007455 A KR1020057007455 A KR 1020057007455A KR 20057007455 A KR20057007455 A KR 20057007455A KR 20050074511 A KR20050074511 A KR 20050074511A
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KR
South Korea
Prior art keywords
composition
photoresist
alcohol
concentration
cleaning composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020057007455A
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English (en)
Korean (ko)
Inventor
비. 코르젠스키 마이클
지. 젠슈 에리오도르
슈 종잉
에이취. 바움 토마스
Original Assignee
어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 filed Critical 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Publication of KR20050074511A publication Critical patent/KR20050074511A/ko
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
KR1020057007455A 2002-10-31 2003-10-27 포토레지스트를 제거하기 위한 초임계 이산화탄소/케미컬조성물 Withdrawn KR20050074511A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/285,146 US6989358B2 (en) 2002-10-31 2002-10-31 Supercritical carbon dioxide/chemical formulation for removal of photoresists
US10/285,146 2002-10-31

Publications (1)

Publication Number Publication Date
KR20050074511A true KR20050074511A (ko) 2005-07-18

Family

ID=32175095

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057007455A Withdrawn KR20050074511A (ko) 2002-10-31 2003-10-27 포토레지스트를 제거하기 위한 초임계 이산화탄소/케미컬조성물

Country Status (8)

Country Link
US (2) US6989358B2 (https=)
EP (1) EP1592520A2 (https=)
JP (1) JP2006505010A (https=)
KR (1) KR20050074511A (https=)
CN (1) CN1708362A (https=)
AU (1) AU2003284931A1 (https=)
TW (1) TW200415239A (https=)
WO (1) WO2004042472A2 (https=)

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KR100807234B1 (ko) * 2006-11-16 2008-02-28 삼성전자주식회사 포토레지스트 제거방법 및 반도체 소자의 제조 방법

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KR100807234B1 (ko) * 2006-11-16 2008-02-28 삼성전자주식회사 포토레지스트 제거방법 및 반도체 소자의 제조 방법

Also Published As

Publication number Publication date
WO2004042472B1 (en) 2004-09-10
US20040087457A1 (en) 2004-05-06
WO2004042472A3 (en) 2004-07-15
AU2003284931A8 (en) 2004-06-07
AU2003284931A1 (en) 2004-06-07
EP1592520A2 (en) 2005-11-09
TW200415239A (en) 2004-08-16
CN1708362A (zh) 2005-12-14
WO2004042472A2 (en) 2004-05-21
JP2006505010A (ja) 2006-02-09
US6989358B2 (en) 2006-01-24
US20060040840A1 (en) 2006-02-23

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Patent event date: 20050428

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid