TW200415239A - Supercritical carbon dioxide/chemical formulation for removal of photoresists - Google Patents
Supercritical carbon dioxide/chemical formulation for removal of photoresists Download PDFInfo
- Publication number
- TW200415239A TW200415239A TW092128269A TW92128269A TW200415239A TW 200415239 A TW200415239 A TW 200415239A TW 092128269 A TW092128269 A TW 092128269A TW 92128269 A TW92128269 A TW 92128269A TW 200415239 A TW200415239 A TW 200415239A
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist
- alcohol
- composition
- patent application
- concentration
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 132
- 239000000203 mixture Substances 0.000 title claims abstract description 120
- 239000000126 substance Substances 0.000 title claims description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 title description 13
- 229910002092 carbon dioxide Inorganic materials 0.000 title description 7
- 239000001569 carbon dioxide Substances 0.000 title description 4
- 238000009472 formulation Methods 0.000 title description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 97
- 238000004140 cleaning Methods 0.000 claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 51
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 33
- 150000002500 ions Chemical class 0.000 claims abstract description 23
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 52
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 45
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 24
- 239000013589 supplement Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 7
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 7
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- -1 amine fluorides Chemical class 0.000 claims description 5
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 5
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 4
- 239000003112 inhibitor Substances 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- GRJJQCWNZGRKAU-UHFFFAOYSA-N pyridin-1-ium;fluoride Chemical compound F.C1=CC=NC=C1 GRJJQCWNZGRKAU-UHFFFAOYSA-N 0.000 claims description 3
- BLIQUJLAJXRXSG-UHFFFAOYSA-N 1-benzyl-3-(trifluoromethyl)pyrrolidin-1-ium-3-carboxylate Chemical compound C1C(C(=O)O)(C(F)(F)F)CCN1CC1=CC=CC=C1 BLIQUJLAJXRXSG-UHFFFAOYSA-N 0.000 claims description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 2
- 239000004327 boric acid Substances 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims 1
- 229910052724 xenon Inorganic materials 0.000 claims 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 15
- 238000005468 ion implantation Methods 0.000 abstract description 8
- 150000002894 organic compounds Chemical class 0.000 abstract description 4
- 150000003839 salts Chemical class 0.000 abstract description 4
- 230000007812 deficiency Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 12
- 239000000243 solution Substances 0.000 description 8
- 238000004380 ashing Methods 0.000 description 7
- 229960004592 isopropanol Drugs 0.000 description 7
- 230000003068 static effect Effects 0.000 description 5
- 150000001298 alcohols Chemical class 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 210000003491 skin Anatomy 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000004615 ingredient Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000006184 cosolvent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000002615 epidermis Anatomy 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007614 solvation Methods 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- IKGLACJFEHSFNN-UHFFFAOYSA-N hydron;triethylazanium;trifluoride Chemical compound F.F.F.CCN(CC)CC IKGLACJFEHSFNN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5022—Organic solvents containing oxygen
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/285,146 US6989358B2 (en) | 2002-10-31 | 2002-10-31 | Supercritical carbon dioxide/chemical formulation for removal of photoresists |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200415239A true TW200415239A (en) | 2004-08-16 |
Family
ID=32175095
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092128269A TW200415239A (en) | 2002-10-31 | 2003-10-13 | Supercritical carbon dioxide/chemical formulation for removal of photoresists |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6989358B2 (https=) |
| EP (1) | EP1592520A2 (https=) |
| JP (1) | JP2006505010A (https=) |
| KR (1) | KR20050074511A (https=) |
| CN (1) | CN1708362A (https=) |
| AU (1) | AU2003284931A1 (https=) |
| TW (1) | TW200415239A (https=) |
| WO (1) | WO2004042472A2 (https=) |
Families Citing this family (54)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7064070B2 (en) * | 1998-09-28 | 2006-06-20 | Tokyo Electron Limited | Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process |
| US6858089B2 (en) * | 1999-10-29 | 2005-02-22 | Paul P. Castrucci | Apparatus and method for semiconductor wafer cleaning |
| US6890853B2 (en) * | 2000-04-25 | 2005-05-10 | Tokyo Electron Limited | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
| US6924086B1 (en) * | 2002-02-15 | 2005-08-02 | Tokyo Electron Limited | Developing photoresist with supercritical fluid and developer |
| WO2003070846A2 (en) * | 2002-02-15 | 2003-08-28 | Supercritical Systems Inc. | Drying resist with a solvent bath and supercritical co2 |
| US7270941B2 (en) * | 2002-03-04 | 2007-09-18 | Tokyo Electron Limited | Method of passivating of low dielectric materials in wafer processing |
| US7387868B2 (en) | 2002-03-04 | 2008-06-17 | Tokyo Electron Limited | Treatment of a dielectric layer using supercritical CO2 |
| CN1642665A (zh) * | 2002-03-22 | 2005-07-20 | 东京毅力科创株式会社 | 用超临界工艺清除杂质 |
| US7169540B2 (en) * | 2002-04-12 | 2007-01-30 | Tokyo Electron Limited | Method of treatment of porous dielectric films to reduce damage during cleaning |
| US7011716B2 (en) * | 2003-04-29 | 2006-03-14 | Advanced Technology Materials, Inc. | Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products |
| US7485611B2 (en) * | 2002-10-31 | 2009-02-03 | Advanced Technology Materials, Inc. | Supercritical fluid-based cleaning compositions and methods |
| US7223352B2 (en) * | 2002-10-31 | 2007-05-29 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal |
| US20060019850A1 (en) * | 2002-10-31 | 2006-01-26 | Korzenski Michael B | Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations |
| US20040112409A1 (en) * | 2002-12-16 | 2004-06-17 | Supercritical Sysems, Inc. | Fluoride in supercritical fluid for photoresist and residue removal |
| US20040177867A1 (en) * | 2002-12-16 | 2004-09-16 | Supercritical Systems, Inc. | Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal |
| US20040231707A1 (en) * | 2003-05-20 | 2004-11-25 | Paul Schilling | Decontamination of supercritical wafer processing equipment |
| US20050022850A1 (en) * | 2003-07-29 | 2005-02-03 | Supercritical Systems, Inc. | Regulation of flow of processing chemistry only into a processing chamber |
| US7163380B2 (en) | 2003-07-29 | 2007-01-16 | Tokyo Electron Limited | Control of fluid flow in the processing of an object with a fluid |
| CA2589168A1 (en) * | 2003-12-01 | 2005-06-16 | Advanced Technology Materials, Inc. | Removal of mems sacrificial layers using supercritical fluid/chemical formulations |
| US7553803B2 (en) * | 2004-03-01 | 2009-06-30 | Advanced Technology Materials, Inc. | Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions |
| JP4519512B2 (ja) * | 2004-04-28 | 2010-08-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法、除去方法 |
| US7307019B2 (en) | 2004-09-29 | 2007-12-11 | Tokyo Electron Limited | Method for supercritical carbon dioxide processing of fluoro-carbon films |
| US7491036B2 (en) | 2004-11-12 | 2009-02-17 | Tokyo Electron Limited | Method and system for cooling a pump |
| US7124764B2 (en) * | 2004-12-29 | 2006-10-24 | Industrial Technology Research Institute | Method for removing impurities from porous materials |
| JP4555698B2 (ja) * | 2005-01-27 | 2010-10-06 | 日本電信電話株式会社 | レジストパターン形成方法 |
| JP4630077B2 (ja) * | 2005-01-27 | 2011-02-09 | 日本電信電話株式会社 | レジストパターン形成方法 |
| US7291565B2 (en) | 2005-02-15 | 2007-11-06 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid |
| US7550075B2 (en) * | 2005-03-23 | 2009-06-23 | Tokyo Electron Ltd. | Removal of contaminants from a fluid |
| US7399708B2 (en) | 2005-03-30 | 2008-07-15 | Tokyo Electron Limited | Method of treating a composite spin-on glass/anti-reflective material prior to cleaning |
| US7442636B2 (en) | 2005-03-30 | 2008-10-28 | Tokyo Electron Limited | Method of inhibiting copper corrosion during supercritical CO2 cleaning |
| EP1879704A2 (en) * | 2005-04-15 | 2008-01-23 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
| US7789971B2 (en) | 2005-05-13 | 2010-09-07 | Tokyo Electron Limited | Treatment of substrate using functionalizing agent in supercritical carbon dioxide |
| US7314828B2 (en) * | 2005-07-19 | 2008-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Repairing method for low-k dielectric materials |
| WO2007120259A2 (en) * | 2005-11-08 | 2007-10-25 | Advanced Technology Materials, Inc. | Formulations for removing copper-containing post-etch residue from microelectronic devices |
| DE102006015382A1 (de) * | 2006-04-03 | 2007-10-04 | Robert Bosch Gmbh | Verfahren zur Behandlung von nanoskalige Poren aufweisendem Material |
| US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
| KR100807234B1 (ko) * | 2006-11-16 | 2008-02-28 | 삼성전자주식회사 | 포토레지스트 제거방법 및 반도체 소자의 제조 방법 |
| US20090029274A1 (en) * | 2007-07-25 | 2009-01-29 | 3M Innovative Properties Company | Method for removing contamination with fluorinated compositions |
| DE102007044787A1 (de) * | 2007-09-19 | 2009-04-02 | Siltronic Ag | Verfahren zum Reinigen einer Halbleiterscheibe |
| US8252194B2 (en) * | 2008-05-02 | 2012-08-28 | Micron Technology, Inc. | Methods of removing silicon oxide |
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| KR101891363B1 (ko) | 2010-10-13 | 2018-08-24 | 엔테그리스, 아이엔씨. | 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법 |
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| JP6363116B2 (ja) | 2013-03-04 | 2018-07-25 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
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| KR102338526B1 (ko) | 2013-07-31 | 2021-12-14 | 엔테그리스, 아이엔씨. | Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형 |
| KR102340516B1 (ko) | 2013-08-30 | 2021-12-21 | 엔테그리스, 아이엔씨. | 티타늄 니트라이드를 선택적으로 에칭하기 위한 조성물 및 방법 |
| TWI654340B (zh) | 2013-12-16 | 2019-03-21 | 美商恩特葛瑞斯股份有限公司 | Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法 |
| KR102352475B1 (ko) | 2013-12-20 | 2022-01-18 | 엔테그리스, 아이엔씨. | 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도 |
| US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
| TWI659098B (zh) | 2014-01-29 | 2019-05-11 | Entegris, Inc. | 化學機械研磨後配方及其使用方法 |
| US11127587B2 (en) | 2014-02-05 | 2021-09-21 | Entegris, Inc. | Non-amine post-CMP compositions and method of use |
| KR102037906B1 (ko) * | 2017-06-23 | 2019-11-27 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
| CN112764329A (zh) * | 2019-10-21 | 2021-05-07 | 昆山晶科微电子材料有限公司 | 一种超临界co2光刻胶去除液及光刻胶的去除方法 |
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| US5013366A (en) * | 1988-12-07 | 1991-05-07 | Hughes Aircraft Company | Cleaning process using phase shifting of dense phase gases |
| US6669995B1 (en) * | 1994-10-12 | 2003-12-30 | Linda Insalaco | Method of treating an anti-reflective coating on a substrate |
| US5783082A (en) * | 1995-11-03 | 1998-07-21 | University Of North Carolina | Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants |
| US6149828A (en) * | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
| US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
| US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
| TW539918B (en) * | 1997-05-27 | 2003-07-01 | Tokyo Electron Ltd | Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process |
| JPH11323394A (ja) * | 1998-05-14 | 1999-11-26 | Texas Instr Japan Ltd | 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法 |
| US6242165B1 (en) | 1998-08-28 | 2001-06-05 | Micron Technology, Inc. | Supercritical compositions for removal of organic material and methods of using same |
| US6277753B1 (en) * | 1998-09-28 | 2001-08-21 | Supercritical Systems Inc. | Removal of CMP residue from semiconductors using supercritical carbon dioxide process |
| US6627588B1 (en) * | 1999-03-11 | 2003-09-30 | Georgia Tech Research Corporation | Method of stripping photoresist using alcohols |
| US6306754B1 (en) * | 1999-06-29 | 2001-10-23 | Micron Technology, Inc. | Method for forming wiring with extremely low parasitic capacitance |
| US6747179B1 (en) * | 1999-08-20 | 2004-06-08 | North Carolina State University | Carbon dioxide-soluble polymers and swellable polymers for carbon dioxide applications |
| US6309425B1 (en) * | 1999-10-12 | 2001-10-30 | Unilever Home & Personal Care, Usa, Division Of Conopco, Inc. | Cleaning composition and method for using the same |
| US6613157B2 (en) * | 2001-02-15 | 2003-09-02 | Micell Technologies, Inc. | Methods for removing particles from microelectronic structures |
| US7326673B2 (en) * | 2001-12-31 | 2008-02-05 | Advanced Technology Materials, Inc. | Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates |
| US6764552B1 (en) * | 2002-04-18 | 2004-07-20 | Novellus Systems, Inc. | Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials |
| US6669785B2 (en) * | 2002-05-15 | 2003-12-30 | Micell Technologies, Inc. | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
| US20040011386A1 (en) * | 2002-07-17 | 2004-01-22 | Scp Global Technologies Inc. | Composition and method for removing photoresist and/or resist residue using supercritical fluids |
| US6962714B2 (en) * | 2002-08-06 | 2005-11-08 | Ecolab, Inc. | Critical fluid antimicrobial compositions and their use and generation |
| US7282099B2 (en) * | 2002-09-24 | 2007-10-16 | Air Products And Chemicals, Inc. | Dense phase processing fluids for microelectronic component manufacture |
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- 2002-10-31 US US10/285,146 patent/US6989358B2/en not_active Expired - Fee Related
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2003
- 2003-10-13 TW TW092128269A patent/TW200415239A/zh unknown
- 2003-10-27 EP EP03779250A patent/EP1592520A2/en not_active Withdrawn
- 2003-10-27 WO PCT/US2003/033837 patent/WO2004042472A2/en not_active Ceased
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- 2003-10-27 KR KR1020057007455A patent/KR20050074511A/ko not_active Withdrawn
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| US20040087457A1 (en) | 2004-05-06 |
| WO2004042472A3 (en) | 2004-07-15 |
| AU2003284931A8 (en) | 2004-06-07 |
| AU2003284931A1 (en) | 2004-06-07 |
| EP1592520A2 (en) | 2005-11-09 |
| CN1708362A (zh) | 2005-12-14 |
| WO2004042472A2 (en) | 2004-05-21 |
| KR20050074511A (ko) | 2005-07-18 |
| JP2006505010A (ja) | 2006-02-09 |
| US6989358B2 (en) | 2006-01-24 |
| US20060040840A1 (en) | 2006-02-23 |
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