JP2006505010A - フォトレジストを除去するための超臨界二酸化炭素／化学調合物 - Google Patents

フォトレジストを除去するための超臨界二酸化炭素／化学調合物 Download PDF

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Publication number
JP2006505010A
JP2006505010A JP2004550105A JP2004550105A JP2006505010A JP 2006505010 A JP2006505010 A JP 2006505010A JP 2004550105 A JP2004550105 A JP 2004550105A JP 2004550105 A JP2004550105 A JP 2004550105A JP 2006505010 A JP2006505010 A JP 2006505010A
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JP
Japan
Prior art keywords
photoresist
composition
alcohol
scco2
cleaning composition
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JP2004550105A
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English (en)
Japanese (ja)
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JP2006505010A5 (https=
Inventor
コルツェンスキ，マイケル，ビー．
ゲンチュウ，エリオドール，ジー．
チョンギン ジュー
バウム，トーマス，エイチ．
Original Assignee
アドバンスド テクノロジー マテリアルズ，インコーポレイテッド
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Application filed by アドバンスド テクノロジー マテリアルズ，インコーポレイテッド filed Critical アドバンスド テクノロジー マテリアルズ，インコーポレイテッド
Publication of JP2006505010A publication Critical patent/JP2006505010A/ja
Publication of JP2006505010A5 publication Critical patent/JP2006505010A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/10—Salts
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5022—Organic solvents containing oxygen

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP2004550105A 2002-10-31 2003-10-27 フォトレジストを除去するための超臨界二酸化炭素／化学調合物 Withdrawn JP2006505010A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/285,146 US6989358B2 (en) 2002-10-31 2002-10-31 Supercritical carbon dioxide/chemical formulation for removal of photoresists
US10/285,146 2002-10-31
PCT/US2003/033837 WO2004042472A2 (en) 2002-10-31 2003-10-27 Supercritical carbon dioxide/chemical formulation for removal of photoresists

Publications (2)

Publication Number Publication Date
JP2006505010A true JP2006505010A (ja) 2006-02-09
JP2006505010A5 JP2006505010A5 (https=) 2006-12-28

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004550105A Withdrawn JP2006505010A (ja) 2002-10-31 2003-10-27 フォトレジストを除去するための超臨界二酸化炭素／化学調合物

Country Status (8)

Country Link
US (2) US6989358B2 (https=)
EP (1) EP1592520A2 (https=)
JP (1) JP2006505010A (https=)
KR (1) KR20050074511A (https=)
CN (1) CN1708362A (https=)
AU (1) AU2003284931A1 (https=)
TW (1) TW200415239A (https=)
WO (1) WO2004042472A2 (https=)

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US8026047B2 (en) 2005-01-27 2011-09-27 Nippon Telegraph And Telephone Corporation Resist pattern forming method, supercritical processing solution for lithography process, and antireflection film forming method

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US8026047B2 (en) 2005-01-27 2011-09-27 Nippon Telegraph And Telephone Corporation Resist pattern forming method, supercritical processing solution for lithography process, and antireflection film forming method

Also Published As

Publication number Publication date
WO2004042472B1 (en) 2004-09-10
US20040087457A1 (en) 2004-05-06
WO2004042472A3 (en) 2004-07-15
AU2003284931A8 (en) 2004-06-07
AU2003284931A1 (en) 2004-06-07
EP1592520A2 (en) 2005-11-09
TW200415239A (en) 2004-08-16
CN1708362A (zh) 2005-12-14
WO2004042472A2 (en) 2004-05-21
KR20050074511A (ko) 2005-07-18
US6989358B2 (en) 2006-01-24
US20060040840A1 (en) 2006-02-23

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