JP2006505010A5 - - Google Patents

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Publication number
JP2006505010A5
JP2006505010A5 JP2004550105A JP2004550105A JP2006505010A5 JP 2006505010 A5 JP2006505010 A5 JP 2006505010A5 JP 2004550105 A JP2004550105 A JP 2004550105A JP 2004550105 A JP2004550105 A JP 2004550105A JP 2006505010 A5 JP2006505010 A5 JP 2006505010A5
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JP
Japan
Prior art keywords
composition
photoresist
alcohol
fluoride
ion source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004550105A
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English (en)
Japanese (ja)
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JP2006505010A (ja
Filing date
Publication date
Priority claimed from US10/285,146 external-priority patent/US6989358B2/en
Application filed filed Critical
Publication of JP2006505010A publication Critical patent/JP2006505010A/ja
Publication of JP2006505010A5 publication Critical patent/JP2006505010A5/ja
Withdrawn legal-status Critical Current

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JP2004550105A 2002-10-31 2003-10-27 フォトレジストを除去するための超臨界二酸化炭素／化学調合物 Withdrawn JP2006505010A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/285,146 US6989358B2 (en) 2002-10-31 2002-10-31 Supercritical carbon dioxide/chemical formulation for removal of photoresists
US10/285,146 2002-10-31
PCT/US2003/033837 WO2004042472A2 (en) 2002-10-31 2003-10-27 Supercritical carbon dioxide/chemical formulation for removal of photoresists

Publications (2)

Publication Number Publication Date
JP2006505010A JP2006505010A (ja) 2006-02-09
JP2006505010A5 true JP2006505010A5 (https=) 2006-12-28

Family

ID=32175095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004550105A Withdrawn JP2006505010A (ja) 2002-10-31 2003-10-27 フォトレジストを除去するための超臨界二酸化炭素／化学調合物

Country Status (8)

Country Link
US (2) US6989358B2 (https=)
EP (1) EP1592520A2 (https=)
JP (1) JP2006505010A (https=)
KR (1) KR20050074511A (https=)
CN (1) CN1708362A (https=)
AU (1) AU2003284931A1 (https=)
TW (1) TW200415239A (https=)
WO (1) WO2004042472A2 (https=)

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JP2008537343A (ja) * 2005-04-15 2008-09-11 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7314828B2 (en) * 2005-07-19 2008-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Repairing method for low-k dielectric materials
WO2007120259A2 (en) * 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
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US10472567B2 (en) 2013-03-04 2019-11-12 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
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