JP2006505010A5 - - Google Patents

Download PDF

Info

Publication number
JP2006505010A5
JP2006505010A5 JP2004550105A JP2004550105A JP2006505010A5 JP 2006505010 A5 JP2006505010 A5 JP 2006505010A5 JP 2004550105 A JP2004550105 A JP 2004550105A JP 2004550105 A JP2004550105 A JP 2004550105A JP 2006505010 A5 JP2006505010 A5 JP 2006505010A5
Authority
JP
Japan
Prior art keywords
composition
photoresist
alcohol
fluoride
ion source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004550105A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006505010A (ja
Filing date
Publication date
Priority claimed from US10/285,146 external-priority patent/US6989358B2/en
Application filed filed Critical
Publication of JP2006505010A publication Critical patent/JP2006505010A/ja
Publication of JP2006505010A5 publication Critical patent/JP2006505010A5/ja
Withdrawn legal-status Critical Current

Links

JP2004550105A 2002-10-31 2003-10-27 フォトレジストを除去するための超臨界二酸化炭素／化学調合物 Withdrawn JP2006505010A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/285,146 US6989358B2 (en) 2002-10-31 2002-10-31 Supercritical carbon dioxide/chemical formulation for removal of photoresists
US10/285,146 2002-10-31
PCT/US2003/033837 WO2004042472A2 (en) 2002-10-31 2003-10-27 Supercritical carbon dioxide/chemical formulation for removal of photoresists

Publications (2)

Publication Number Publication Date
JP2006505010A JP2006505010A (ja) 2006-02-09
JP2006505010A5 true JP2006505010A5 (https=) 2006-12-28

Family

ID=32175095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004550105A Withdrawn JP2006505010A (ja) 2002-10-31 2003-10-27 フォトレジストを除去するための超臨界二酸化炭素／化学調合物

Country Status (8)

Country Link
US (2) US6989358B2 (https=)
EP (1) EP1592520A2 (https=)
JP (1) JP2006505010A (https=)
KR (1) KR20050074511A (https=)
CN (1) CN1708362A (https=)
AU (1) AU2003284931A1 (https=)
TW (1) TW200415239A (https=)
WO (1) WO2004042472A2 (https=)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7064070B2 (en) * 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
US6858089B2 (en) * 1999-10-29 2005-02-22 Paul P. Castrucci Apparatus and method for semiconductor wafer cleaning
US6890853B2 (en) * 2000-04-25 2005-05-10 Tokyo Electron Limited Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
US6924086B1 (en) * 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
WO2003070846A2 (en) * 2002-02-15 2003-08-28 Supercritical Systems Inc. Drying resist with a solvent bath and supercritical co2
US7270941B2 (en) * 2002-03-04 2007-09-18 Tokyo Electron Limited Method of passivating of low dielectric materials in wafer processing
US7387868B2 (en) 2002-03-04 2008-06-17 Tokyo Electron Limited Treatment of a dielectric layer using supercritical CO2
CN1642665A (zh) * 2002-03-22 2005-07-20 东京毅力科创株式会社 用超临界工艺清除杂质
US7169540B2 (en) * 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US7011716B2 (en) * 2003-04-29 2006-03-14 Advanced Technology Materials, Inc. Compositions and methods for drying patterned wafers during manufacture of integrated circuitry products
US7485611B2 (en) * 2002-10-31 2009-02-03 Advanced Technology Materials, Inc. Supercritical fluid-based cleaning compositions and methods
US7223352B2 (en) * 2002-10-31 2007-05-29 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
US20060019850A1 (en) * 2002-10-31 2006-01-26 Korzenski Michael B Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations
US20040112409A1 (en) * 2002-12-16 2004-06-17 Supercritical Sysems, Inc. Fluoride in supercritical fluid for photoresist and residue removal
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
US20040231707A1 (en) * 2003-05-20 2004-11-25 Paul Schilling Decontamination of supercritical wafer processing equipment
US20050022850A1 (en) * 2003-07-29 2005-02-03 Supercritical Systems, Inc. Regulation of flow of processing chemistry only into a processing chamber
US7163380B2 (en) 2003-07-29 2007-01-16 Tokyo Electron Limited Control of fluid flow in the processing of an object with a fluid
CA2589168A1 (en) * 2003-12-01 2005-06-16 Advanced Technology Materials, Inc. Removal of mems sacrificial layers using supercritical fluid/chemical formulations
US7553803B2 (en) * 2004-03-01 2009-06-30 Advanced Technology Materials, Inc. Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions
JP4519512B2 (ja) * 2004-04-28 2010-08-04 株式会社半導体エネルギー研究所 半導体装置の作製方法、除去方法
US7307019B2 (en) 2004-09-29 2007-12-11 Tokyo Electron Limited Method for supercritical carbon dioxide processing of fluoro-carbon films
US7491036B2 (en) 2004-11-12 2009-02-17 Tokyo Electron Limited Method and system for cooling a pump
US7124764B2 (en) * 2004-12-29 2006-10-24 Industrial Technology Research Institute Method for removing impurities from porous materials
JP4555698B2 (ja) * 2005-01-27 2010-10-06 日本電信電話株式会社 レジストパターン形成方法
JP4630077B2 (ja) * 2005-01-27 2011-02-09 日本電信電話株式会社 レジストパターン形成方法
US7291565B2 (en) 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
US7550075B2 (en) * 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7399708B2 (en) 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
EP1879704A2 (en) * 2005-04-15 2008-01-23 Advanced Technology Materials, Inc. Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
US7314828B2 (en) * 2005-07-19 2008-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Repairing method for low-k dielectric materials
WO2007120259A2 (en) * 2005-11-08 2007-10-25 Advanced Technology Materials, Inc. Formulations for removing copper-containing post-etch residue from microelectronic devices
DE102006015382A1 (de) * 2006-04-03 2007-10-04 Robert Bosch Gmbh Verfahren zur Behandlung von nanoskalige Poren aufweisendem Material
US20080125342A1 (en) * 2006-11-07 2008-05-29 Advanced Technology Materials, Inc. Formulations for cleaning memory device structures
KR100807234B1 (ko) * 2006-11-16 2008-02-28 삼성전자주식회사 포토레지스트 제거방법 및 반도체 소자의 제조 방법
US20090029274A1 (en) * 2007-07-25 2009-01-29 3M Innovative Properties Company Method for removing contamination with fluorinated compositions
DE102007044787A1 (de) * 2007-09-19 2009-04-02 Siltronic Ag Verfahren zum Reinigen einer Halbleiterscheibe
US8252194B2 (en) * 2008-05-02 2012-08-28 Micron Technology, Inc. Methods of removing silicon oxide
KR20110020768A (ko) * 2008-05-22 2011-03-03 아사히 가라스 가부시키가이샤 불소 화합물에 의한 세정 방법
KR101891363B1 (ko) 2010-10-13 2018-08-24 엔테그리스, 아이엔씨. 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법
KR102118964B1 (ko) 2012-12-05 2020-06-08 엔테그리스, 아이엔씨. Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법
JP6363116B2 (ja) 2013-03-04 2018-07-25 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
KR102338550B1 (ko) 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
KR102338526B1 (ko) 2013-07-31 2021-12-14 엔테그리스, 아이엔씨. Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형
KR102340516B1 (ko) 2013-08-30 2021-12-21 엔테그리스, 아이엔씨. 티타늄 니트라이드를 선택적으로 에칭하기 위한 조성물 및 방법
TWI654340B (zh) 2013-12-16 2019-03-21 美商恩特葛瑞斯股份有限公司 Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法
KR102352475B1 (ko) 2013-12-20 2022-01-18 엔테그리스, 아이엔씨. 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도
US10475658B2 (en) 2013-12-31 2019-11-12 Entegris, Inc. Formulations to selectively etch silicon and germanium
TWI659098B (zh) 2014-01-29 2019-05-11 Entegris, Inc. 化學機械研磨後配方及其使用方法
US11127587B2 (en) 2014-02-05 2021-09-21 Entegris, Inc. Non-amine post-CMP compositions and method of use
KR102037906B1 (ko) * 2017-06-23 2019-11-27 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN112764329A (zh) * 2019-10-21 2021-05-07 昆山晶科微电子材料有限公司 一种超临界co2光刻胶去除液及光刻胶的去除方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5013366A (en) * 1988-12-07 1991-05-07 Hughes Aircraft Company Cleaning process using phase shifting of dense phase gases
US6669995B1 (en) * 1994-10-12 2003-12-30 Linda Insalaco Method of treating an anti-reflective coating on a substrate
US5783082A (en) * 1995-11-03 1998-07-21 University Of North Carolina Cleaning process using carbon dioxide as a solvent and employing molecularly engineered surfactants
US6149828A (en) * 1997-05-05 2000-11-21 Micron Technology, Inc. Supercritical etching compositions and method of using same
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6500605B1 (en) * 1997-05-27 2002-12-31 Tokyo Electron Limited Removal of photoresist and residue from substrate using supercritical carbon dioxide process
TW539918B (en) * 1997-05-27 2003-07-01 Tokyo Electron Ltd Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process
JPH11323394A (ja) * 1998-05-14 1999-11-26 Texas Instr Japan Ltd 半導体素子製造用洗浄剤及びそれを用いた半導体素子の製造方法
US6242165B1 (en) 1998-08-28 2001-06-05 Micron Technology, Inc. Supercritical compositions for removal of organic material and methods of using same
US6277753B1 (en) * 1998-09-28 2001-08-21 Supercritical Systems Inc. Removal of CMP residue from semiconductors using supercritical carbon dioxide process
US6627588B1 (en) * 1999-03-11 2003-09-30 Georgia Tech Research Corporation Method of stripping photoresist using alcohols
US6306754B1 (en) * 1999-06-29 2001-10-23 Micron Technology, Inc. Method for forming wiring with extremely low parasitic capacitance
US6747179B1 (en) * 1999-08-20 2004-06-08 North Carolina State University Carbon dioxide-soluble polymers and swellable polymers for carbon dioxide applications
US6309425B1 (en) * 1999-10-12 2001-10-30 Unilever Home & Personal Care, Usa, Division Of Conopco, Inc. Cleaning composition and method for using the same
US6613157B2 (en) * 2001-02-15 2003-09-02 Micell Technologies, Inc. Methods for removing particles from microelectronic structures
US7326673B2 (en) * 2001-12-31 2008-02-05 Advanced Technology Materials, Inc. Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates
US6764552B1 (en) * 2002-04-18 2004-07-20 Novellus Systems, Inc. Supercritical solutions for cleaning photoresist and post-etch residue from low-k materials
US6669785B2 (en) * 2002-05-15 2003-12-30 Micell Technologies, Inc. Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide
US20040011386A1 (en) * 2002-07-17 2004-01-22 Scp Global Technologies Inc. Composition and method for removing photoresist and/or resist residue using supercritical fluids
US6962714B2 (en) * 2002-08-06 2005-11-08 Ecolab, Inc. Critical fluid antimicrobial compositions and their use and generation
US7282099B2 (en) * 2002-09-24 2007-10-16 Air Products And Chemicals, Inc. Dense phase processing fluids for microelectronic component manufacture

Similar Documents

Publication Publication Date Title
JP2006505010A5 (https=)
KR102285003B1 (ko) TiN 하드 마스크 제거 및 에칭 잔류물 세정용 조성물
US6989358B2 (en) Supercritical carbon dioxide/chemical formulation for removal of photoresists
KR102058679B1 (ko) 구리막, 몰리브덴막 및 구리-몰리브덴 합금막의 식각액 조성물
JP2006504847A5 (https=)
KR102315310B1 (ko) 질화티탄 하드 마스크의 선택적 제거 및 에치 잔류물 제거
US7479474B2 (en) Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing
CA2544209C (en) Cleaning solutions and etchants and methods for using same
EP3040409A1 (en) Stripping compositions having high wn/w etching selectivity
JP2004536175A (ja) フッ化物含有緩衝水性エッチング残渣除去剤および洗浄剤
KR20050084917A (ko) 반도체 장치 세정용 수성 인산 조성물
CN105981136B (zh) 氮化钛去除用液体组合物和使用其的半导体元件的清洗方法、以及半导体元件的制造方法
KR20160097201A (ko) 표면 잔류물 제거용 세정 제형
US11946148B2 (en) Hafnium oxide corrosion inhibitor
JP6776125B2 (ja) イオン注入レジストの除去のための非酸化性の強酸の使用
US10689573B2 (en) Wet etching composition for substrate having SiN layer and Si layer and wet etching method using same
KR20140092263A (ko) 구리/몰리브덴막 또는 구리/몰리브덴 합금막의 식각액 조성물
CN109423290A (zh) 用于在制造半导体器件过程中相对于氮化钛选择性地去除氮化钽的蚀刻溶液
US20060178282A1 (en) Process for production of etching or cleaning fluids
KR20110046992A (ko) 식각액 조성물
TWI784933B (zh) 具有優異基材相容性及卓越浴穩定性之經酸性半水性氟化物活化的抗反射塗層清潔劑
JP5017985B2 (ja) レジスト除去用組成物及びレジストの除去方法
KR20180074290A (ko) 식각액 조성물 및 이를 이용한 식각 방법
CN121320031A (zh) 清洗组合物及其制备方法和应用
CN110095953A (zh) 一种用于去除半导体晶片蚀刻残留物的清洗组合物