JP2006504847A5 - - Google Patents
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- Publication number
- JP2006504847A5 JP2006504847A5 JP2004550106A JP2004550106A JP2006504847A5 JP 2006504847 A5 JP2006504847 A5 JP 2006504847A5 JP 2004550106 A JP2004550106 A JP 2004550106A JP 2004550106 A JP2004550106 A JP 2004550106A JP 2006504847 A5 JP2006504847 A5 JP 2006504847A5
- Authority
- JP
- Japan
- Prior art keywords
- composition
- acid
- post
- aluminum
- etch residue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 38
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims 38
- 238000000034 method Methods 0.000 claims 25
- 229910052782 aluminium Inorganic materials 0.000 claims 23
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims 19
- 229960004889 salicylic acid Drugs 0.000 claims 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 15
- 239000008139 complexing agent Substances 0.000 claims 15
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims 14
- 239000004327 boric acid Substances 0.000 claims 14
- -1 hydrogen trifluoride amine compound Chemical class 0.000 claims 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 13
- 238000004140 cleaning Methods 0.000 claims 13
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 10
- 208000036822 Small cell carcinoma of the ovary Diseases 0.000 claims 10
- 229910052731 fluorine Inorganic materials 0.000 claims 10
- 239000011737 fluorine Substances 0.000 claims 10
- 201000005292 ovarian small cell carcinoma Diseases 0.000 claims 10
- 238000005260 corrosion Methods 0.000 claims 9
- 230000007797 corrosion Effects 0.000 claims 9
- 239000003112 inhibitor Substances 0.000 claims 9
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 claims 8
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims 6
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims 6
- 229910052739 hydrogen Inorganic materials 0.000 claims 6
- 239000001257 hydrogen Substances 0.000 claims 6
- 239000000126 substance Substances 0.000 claims 6
- ALKYHXVLJMQRLQ-UHFFFAOYSA-N 3-Hydroxy-2-naphthoate Chemical compound C1=CC=C2C=C(O)C(C(=O)O)=CC2=C1 ALKYHXVLJMQRLQ-UHFFFAOYSA-N 0.000 claims 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- 125000000217 alkyl group Chemical group 0.000 claims 4
- 229940074391 gallic acid Drugs 0.000 claims 4
- 235000004515 gallic acid Nutrition 0.000 claims 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 4
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims 4
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 150000002894 organic compounds Chemical class 0.000 claims 3
- 150000003839 salts Chemical class 0.000 claims 3
- 230000003068 static effect Effects 0.000 claims 3
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 claims 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 2
- PVZMXULSHARAJG-UHFFFAOYSA-N N,N-diethylethanamine molecular hydrogen Chemical compound [H][H].CCN(CC)CC PVZMXULSHARAJG-UHFFFAOYSA-N 0.000 claims 2
- 239000000654 additive Substances 0.000 claims 2
- 230000000996 additive effect Effects 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 230000002950 deficient Effects 0.000 claims 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims 2
- 235000006408 oxalic acid Nutrition 0.000 claims 2
- 230000001376 precipitating effect Effects 0.000 claims 2
- GRJJQCWNZGRKAU-UHFFFAOYSA-N pyridin-1-ium;fluoride Chemical compound F.C1=CC=NC=C1 GRJJQCWNZGRKAU-UHFFFAOYSA-N 0.000 claims 2
- 238000005406 washing Methods 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/285,015 US7223352B2 (en) | 2002-10-31 | 2002-10-31 | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal |
| PCT/US2003/033838 WO2004041965A1 (en) | 2002-10-31 | 2003-10-27 | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006504847A JP2006504847A (ja) | 2006-02-09 |
| JP2006504847A5 true JP2006504847A5 (https=) | 2006-12-28 |
Family
ID=32175064
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004550106A Withdrawn JP2006504847A (ja) | 2002-10-31 | 2003-10-27 | 灰化処理されたおよび灰化処理されていないアルミニウム・ポストエッチ残留物の除去のための超臨界二酸化炭素／化学調合物 |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US7223352B2 (https=) |
| EP (1) | EP1572833B1 (https=) |
| JP (1) | JP2006504847A (https=) |
| KR (1) | KR20060086839A (https=) |
| CN (1) | CN100379837C (https=) |
| AT (1) | ATE405621T1 (https=) |
| AU (1) | AU2003284932A1 (https=) |
| DE (1) | DE60323143D1 (https=) |
| TW (1) | TW200422382A (https=) |
| WO (1) | WO2004041965A1 (https=) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7223352B2 (en) * | 2002-10-31 | 2007-05-29 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal |
| US20060019850A1 (en) * | 2002-10-31 | 2006-01-26 | Korzenski Michael B | Removal of particle contamination on a patterned silicon/silicon dioxide using dense fluid/chemical formulations |
| US7485611B2 (en) * | 2002-10-31 | 2009-02-03 | Advanced Technology Materials, Inc. | Supercritical fluid-based cleaning compositions and methods |
| US20050183740A1 (en) * | 2004-02-19 | 2005-08-25 | Fulton John L. | Process and apparatus for removing residues from semiconductor substrates |
| US7553803B2 (en) * | 2004-03-01 | 2009-06-30 | Advanced Technology Materials, Inc. | Enhancement of silicon-containing particulate material removal using supercritical fluid-based compositions |
| US20050261150A1 (en) * | 2004-05-21 | 2005-11-24 | Battelle Memorial Institute, A Part Interest | Reactive fluid systems for removing deposition materials and methods for using same |
| US7846349B2 (en) * | 2004-12-22 | 2010-12-07 | Applied Materials, Inc. | Solution for the selective removal of metal from aluminum substrates |
| EP1879704A2 (en) * | 2005-04-15 | 2008-01-23 | Advanced Technology Materials, Inc. | Formulations for cleaning ion-implanted photoresist layers from microelectronic devices |
| WO2007120259A2 (en) * | 2005-11-08 | 2007-10-25 | Advanced Technology Materials, Inc. | Formulations for removing copper-containing post-etch residue from microelectronic devices |
| KR100818708B1 (ko) * | 2006-08-18 | 2008-04-01 | 주식회사 하이닉스반도체 | 표면 세정을 포함하는 반도체소자 제조방법 |
| US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
| US8778210B2 (en) * | 2006-12-21 | 2014-07-15 | Advanced Technology Materials, Inc. | Compositions and methods for the selective removal of silicon nitride |
| US20100261632A1 (en) * | 2007-08-02 | 2010-10-14 | Advanced Technology Materials, Inc. | Non-fluoride containing composition for the removal of residue from a microelectronic device |
| US7872978B1 (en) * | 2008-04-18 | 2011-01-18 | Link—A—Media Devices Corporation | Obtaining parameters for minimizing an error event probability |
| US8153533B2 (en) * | 2008-09-24 | 2012-04-10 | Lam Research | Methods and systems for preventing feature collapse during microelectronic topography fabrication |
| US8961701B2 (en) * | 2008-09-24 | 2015-02-24 | Lam Research Corporation | Method and system of drying a microelectronic topography |
| US20100184301A1 (en) * | 2009-01-20 | 2010-07-22 | Lam Research | Methods for Preventing Precipitation of Etch Byproducts During an Etch Process and/or Subsequent Rinse Process |
| US9620410B1 (en) | 2009-01-20 | 2017-04-11 | Lam Research Corporation | Methods for preventing precipitation of etch byproducts during an etch process and/or subsequent rinse process |
| US8398779B2 (en) * | 2009-03-02 | 2013-03-19 | Applied Materials, Inc. | Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates |
| US8101561B2 (en) | 2009-11-17 | 2012-01-24 | Wai Mun Lee | Composition and method for treating semiconductor substrate surface |
| KR101891363B1 (ko) | 2010-10-13 | 2018-08-24 | 엔테그리스, 아이엔씨. | 티타늄 니트라이드 부식을 억제하기 위한 조성물 및 방법 |
| KR102118964B1 (ko) | 2012-12-05 | 2020-06-08 | 엔테그리스, 아이엔씨. | Iii-v 반도체 물질을 세척하기 위한 조성물 및 이를 사용하는 방법 |
| JP6363116B2 (ja) | 2013-03-04 | 2018-07-25 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
| KR102338550B1 (ko) | 2013-06-06 | 2021-12-14 | 엔테그리스, 아이엔씨. | 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법 |
| KR102338526B1 (ko) | 2013-07-31 | 2021-12-14 | 엔테그리스, 아이엔씨. | Cu/W 호환성을 갖는, 금속 하드 마스크 및 에칭-후 잔여물을 제거하기 위한 수성 제형 |
| KR102340516B1 (ko) | 2013-08-30 | 2021-12-21 | 엔테그리스, 아이엔씨. | 티타늄 니트라이드를 선택적으로 에칭하기 위한 조성물 및 방법 |
| TWI654340B (zh) | 2013-12-16 | 2019-03-21 | 美商恩特葛瑞斯股份有限公司 | Ｎｉ：ＮｉＧｅ：Ｇｅ選擇性蝕刻配方及其使用方法 |
| KR102352475B1 (ko) | 2013-12-20 | 2022-01-18 | 엔테그리스, 아이엔씨. | 이온-주입된 레지스트의 제거를 위한 비-산화성 강산의 용도 |
| US10475658B2 (en) | 2013-12-31 | 2019-11-12 | Entegris, Inc. | Formulations to selectively etch silicon and germanium |
| TWI659098B (zh) | 2014-01-29 | 2019-05-11 | Entegris, Inc. | 化學機械研磨後配方及其使用方法 |
| US11127587B2 (en) | 2014-02-05 | 2021-09-21 | Entegris, Inc. | Non-amine post-CMP compositions and method of use |
| CN109518200B (zh) * | 2018-10-17 | 2021-02-02 | 佛山市南海双成金属表面技术有限公司 | 一种用于铝合金中和处理用的除灰剂及其制备方法 |
| CN110438504A (zh) * | 2019-08-19 | 2019-11-12 | 江阴江化微电子材料股份有限公司 | 一种铝栅刻开区硅渣清除组合物及硅渣清除方法 |
| JP7395773B2 (ja) * | 2020-05-12 | 2023-12-11 | ラム リサーチ コーポレーション | 刺激応答性ポリマー膜の制御された分解 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2663483B2 (ja) * | 1988-02-29 | 1997-10-15 | 勝 西川 | レジストパターン形成方法 |
| US5868856A (en) * | 1996-07-25 | 1999-02-09 | Texas Instruments Incorporated | Method for removing inorganic contamination by chemical derivitization and extraction |
| US6149828A (en) * | 1997-05-05 | 2000-11-21 | Micron Technology, Inc. | Supercritical etching compositions and method of using same |
| US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
| US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
| US6277753B1 (en) * | 1998-09-28 | 2001-08-21 | Supercritical Systems Inc. | Removal of CMP residue from semiconductors using supercritical carbon dioxide process |
| US6425956B1 (en) * | 2001-01-05 | 2002-07-30 | International Business Machines Corporation | Process for removing chemical mechanical polishing residual slurry |
| JP2002237481A (ja) * | 2001-02-09 | 2002-08-23 | Kobe Steel Ltd | 微細構造体の洗浄方法 |
| US6398875B1 (en) * | 2001-06-27 | 2002-06-04 | International Business Machines Corporation | Process of drying semiconductor wafers using liquid or supercritical carbon dioxide |
| US7326673B2 (en) * | 2001-12-31 | 2008-02-05 | Advanced Technology Materials, Inc. | Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates |
| US6669785B2 (en) * | 2002-05-15 | 2003-12-30 | Micell Technologies, Inc. | Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide |
| US20030217764A1 (en) * | 2002-05-23 | 2003-11-27 | Kaoru Masuda | Process and composition for removing residues from the microstructure of an object |
| US20040050406A1 (en) * | 2002-07-17 | 2004-03-18 | Akshey Sehgal | Compositions and method for removing photoresist and/or resist residue at pressures ranging from ambient to supercritical |
| US20040011386A1 (en) * | 2002-07-17 | 2004-01-22 | Scp Global Technologies Inc. | Composition and method for removing photoresist and/or resist residue using supercritical fluids |
| US6989358B2 (en) * | 2002-10-31 | 2006-01-24 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for removal of photoresists |
| US7223352B2 (en) * | 2002-10-31 | 2007-05-29 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal |
| US20040112409A1 (en) * | 2002-12-16 | 2004-06-17 | Supercritical Sysems, Inc. | Fluoride in supercritical fluid for photoresist and residue removal |
-
2002
- 2002-10-31 US US10/285,015 patent/US7223352B2/en not_active Expired - Fee Related
-
2003
- 2003-10-13 TW TW092128268A patent/TW200422382A/zh unknown
- 2003-10-27 CN CNB2003801022309A patent/CN100379837C/zh not_active Expired - Fee Related
- 2003-10-27 WO PCT/US2003/033838 patent/WO2004041965A1/en not_active Ceased
- 2003-10-27 AU AU2003284932A patent/AU2003284932A1/en not_active Abandoned
- 2003-10-27 KR KR1020057007053A patent/KR20060086839A/ko not_active Withdrawn
- 2003-10-27 JP JP2004550106A patent/JP2006504847A/ja not_active Withdrawn
- 2003-10-27 DE DE60323143T patent/DE60323143D1/de not_active Expired - Fee Related
- 2003-10-27 EP EP03779251A patent/EP1572833B1/en not_active Expired - Lifetime
- 2003-10-27 AT AT03779251T patent/ATE405621T1/de not_active IP Right Cessation
-
2005
- 2005-11-14 US US11/273,637 patent/US20060073998A1/en not_active Abandoned
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