KR20050006080A - 멀티슬롯 안테나를 이용한 표면파 플라즈마 처리장치 - Google Patents
멀티슬롯 안테나를 이용한 표면파 플라즈마 처리장치 Download PDFInfo
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- KR20050006080A KR20050006080A KR1020040052911A KR20040052911A KR20050006080A KR 20050006080 A KR20050006080 A KR 20050006080A KR 1020040052911 A KR1020040052911 A KR 1020040052911A KR 20040052911 A KR20040052911 A KR 20040052911A KR 20050006080 A KR20050006080 A KR 20050006080A
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- plasma processing
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- processing apparatus
- surface wave
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
Abstract
Description
Claims (8)
- 마이크로파가 투과가능한 유전체창으로서 일부가 형성된 플라즈마 처리실;해당 플라즈마 처리실내에 설치된 피처리 기판의 지지체;상기 플라즈마 처리실내에 플라즈마 처리가스를 도입하기 위한 플라즈마 처리가스 도입수단;상기 플라즈마 처리실의 내부를 진공배기하기 위한 배기수단; 및상기 피처리 기판의 지지체에 대향해서 상기 유전체창의 바깥쪽에 배치된 멀티슬롯 안테나를 이용한 마이크로파 도입수단을 구비한 표면파 플라즈마 처리장치에 있어서,상기 슬롯으로서, 둘레방향으로 표면파가 전파하는 방사상으로 배치된 슬롯과, 반경방향으로 표면파가 전파하는 원호형상으로 배치된 슬롯을 조합시킨 것을 특징으로 하는 표면파 플라즈마 처리장치.
- 제 1항에 있어서, 상기 마이크로파 도입수단은, 무종단(無終端) 고리형상 도파관의 H면에 상기 슬롯이 형성된 멀티슬롯 안테나인 것을 특징으로 하는 표면파 플라즈마 처리장치.
- 제 1항에 있어서, 상기 방사상으로 배열된 슬롯은, 중심끼리의 간격이, 표면파의 반파장의 홀수배인 것을 특징으로 하는 표면파 플라즈마 처리장치.
- 제 1항에 있어서, 상기 원호형상으로 배열된 슬롯은, 원호를 서로 연결해서 형성되는 원의 직경이, 표면파의 반파장의 짝수배인 것을 특징으로 하는 표면파 플라즈마 처리장치.
- 제 1항에 있어서, 상기 방사상으로 배열된 슬롯과 상기 원호형상으로 배열된 슬롯의 양쪽의 마이크로파 방사율을 상대적으로 변화시킴으로써 반경방향의 플라즈마 분포를 조정하는 것을 특징으로 하는 표면파 플라즈마 처리장치.
- 제 5항에 있어서, 상기 플라즈마 분포조정은, 상기 방사상으로 배열된 슬롯의 길이 및 상기 원호형상으로 배열된 슬롯의 중심각을 변화시킴으로써 행하는 것을 특징으로 하는 표면파 플라즈마 처리장치.
- 제 5항에 있어서, 상기 플라즈마 분포조정은, 상기 방사상으로 배열된 슬롯 및 상기 원호형상으로 배열된 슬롯의 폭을 변화시킴으로써 행하는 것을 특징으로 하는 표면파 플라즈마 처리장치.
- 제 5항에 있어서, 상기 플라즈마 분포조정은, 상기 방사상으로 배열된 슬롯 및 상기 원호형상으로 배열된 슬롯의 두께를 변화시킴으로써 행하는 것을 특징으로 하는 표면파 플라즈마 처리장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00271876 | 2003-07-08 | ||
JP2003271876A JP2005033055A (ja) | 2003-07-08 | 2003-07-08 | 放射状スロットに円弧状スロットを併設したマルチスロットアンテナを用いた表面波プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050006080A true KR20050006080A (ko) | 2005-01-15 |
KR100554116B1 KR100554116B1 (ko) | 2006-02-21 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020040052911A KR100554116B1 (ko) | 2003-07-08 | 2004-07-08 | 멀티슬롯 안테나를 이용한 표면파 플라즈마 처리장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20050005854A1 (ko) |
JP (1) | JP2005033055A (ko) |
KR (1) | KR100554116B1 (ko) |
CN (1) | CN1322793C (ko) |
TW (1) | TWI242246B (ko) |
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CN1322793C (zh) | 2007-06-20 |
TWI242246B (en) | 2005-10-21 |
US20050005854A1 (en) | 2005-01-13 |
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