KR20040005516A - Sonos 구조를 갖는 불휘발성 메모리 소자의 제조 방법 - Google Patents
Sonos 구조를 갖는 불휘발성 메모리 소자의 제조 방법 Download PDFInfo
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- KR20040005516A KR20040005516A KR1020020040093A KR20020040093A KR20040005516A KR 20040005516 A KR20040005516 A KR 20040005516A KR 1020020040093 A KR1020020040093 A KR 1020020040093A KR 20020040093 A KR20020040093 A KR 20020040093A KR 20040005516 A KR20040005516 A KR 20040005516A
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- Prior art keywords
- silicon nitride
- silicon
- film
- layer
- oxide film
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 229910052710 silicon Inorganic materials 0.000 title abstract description 6
- 239000010703 silicon Substances 0.000 title abstract description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 58
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 54
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000005641 tunneling Effects 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims description 19
- 238000007254 oxidation reaction Methods 0.000 claims description 19
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000009279 wet oxidation reaction Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 8
- 229920005591 polysilicon Polymers 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 230000001590 oxidative effect Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3143—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
- H01L21/3144—Inorganic layers composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers on silicon
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
- H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32105—Oxidation of silicon-containing layers
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- Condensed Matter Physics & Semiconductors (AREA)
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- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (10)
- 반도체 기판상에 터널링층 및 전하 트랩층으로서의 실리콘 산화막-실리콘 질화막 패턴을 형성하는 단계;산화 공정을 수행하여 상기 실리콘 질화막 패턴의 상부 및 측면상에 차폐층으로서의 실리콘 질화 산화막과, 상기 반도체 기판의 노출 표면상에 게이트 절연막을 형성하는 단계; 및상기 실리콘 질화 산화막 및 상기 게이트 절연막 위에 컨트롤 게이트 전극을 형성하는 단계를 포함하는 것을 특징으로 하는 불휘발성 메모리 소자의 제조 방법.
- 제1항에 있어서, 상기 실리콘 산화막-실리콘 질화막 패턴을 형성하는 단계는,상기 반도체 기판 위에 실리콘 산화막을 형성하는 단계;상기 실리콘 산화막 위에 실리콘 질화막을 형성하는 단계;상기 실리콘 질화막 위에 포토레지스트막 패턴을 형성하는 단계;상기 포토레지스트막 패턴을 식각 마스크로 한 식각 공정을 수행하여 상기 반도체 기판의 일부 표면이 노출되도록 상기 실리콘 질화막 및 실리콘 산화막을 순차적으로 식각하는 단계; 및상기 포토레지스트막 패턴을 제거하는 단계를 포함하는 것을 특징으로 하는 불휘발성 메모리 소자의 제조 방법.
- 제2항에 있어서,상기 실리콘 산화막은 열 산화 방법을 사용하여 형성하는 것을 특징으로 하는 불휘발성 메모리 소자의 제조 방법.
- 제2항에 있어서,상기 실리콘 질화막은 화학 기상 증착법을 사용하여 형성하는 것을 특징으로하는 불휘발성 메모리 소자의 제조 방법.
- 제2항에 있어서,상기 실리콘 질화막의 두께는 형성하고자 하는 전하 트랩층의 소망하는 두께보다 더 크게 형성하는 것을 특징으로 하는 불휘발성 메모리 소자의 제조 방법.
- 제1항에 있어서,상기 산화 공정은 래디컬 산화 공정인 것을 특징으로 하는 불휘발성 메모리 소자의 제조 방법.
- 제6항에 있어서,상기 래디컬 산화 공정은 플라즈마 방법에 의해서 산소 래디컬을 생성하는 것을 특징으로 하는 불휘발성 메모리 소자의 제조 방법.
- 제6항에 있어서,상기 래디컬 산화 공정은 고온의 습식 산화 방법에 의해서 산소 래디컬을 생성하는 것을 특징으로 하는 불휘발성 메모리 소자의 제조 방법.
- 제8항에 있어서,상기 고온의 습식 산화 방법은 500-1150??의 온도에서 수행하는 것을 특징으로 하는 불휘발성 메모리 소자의 제조 방법.
- 제1항에 있어서,상기 게이트 절연막의 두께는 상기 실리콘 질화 산화막 두께의 2배가 되도록 하는 것을 특징으로 하는 불휘발성 메모리 소자의 제조 방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2002-0040093A KR100493022B1 (ko) | 2002-07-10 | 2002-07-10 | Sonos 구조를 갖는 불휘발성 메모리 소자의 제조 방법 |
US10/455,676 US6835621B2 (en) | 2002-07-10 | 2003-06-05 | Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-silicon |
JP2003183380A JP2005108864A (ja) | 2002-07-10 | 2003-06-26 | Sonos構造を有する不揮発性メモリ素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2002-0040093A KR100493022B1 (ko) | 2002-07-10 | 2002-07-10 | Sonos 구조를 갖는 불휘발성 메모리 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20040005516A true KR20040005516A (ko) | 2004-01-16 |
KR100493022B1 KR100493022B1 (ko) | 2005-06-07 |
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KR10-2002-0040093A KR100493022B1 (ko) | 2002-07-10 | 2002-07-10 | Sonos 구조를 갖는 불휘발성 메모리 소자의 제조 방법 |
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Country | Link |
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US (1) | US6835621B2 (ko) |
JP (1) | JP2005108864A (ko) |
KR (1) | KR100493022B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109870769A (zh) * | 2019-03-04 | 2019-06-11 | 南京大学 | 一种干法蚀刻制备二氧化硅光学微盘腔的方法 |
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US6925007B2 (en) | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
KR100475087B1 (ko) * | 2002-08-19 | 2005-03-10 | 삼성전자주식회사 | 국부적 sonos 구조를 갖는 불휘발성 메모리 소자의제조 방법 |
US7183166B2 (en) * | 2003-11-25 | 2007-02-27 | Macronix International Co., Ltd. | Method for forming oxide on ONO structure |
TWI229924B (en) * | 2004-02-10 | 2005-03-21 | Powerchip Semiconductor Corp | Method of manufacturing non-volatile memory cell |
CN1309047C (zh) * | 2004-03-26 | 2007-04-04 | 力晶半导体股份有限公司 | 非挥发性存储单元的制造方法 |
KR100577311B1 (ko) * | 2004-06-09 | 2006-05-10 | 동부일렉트로닉스 주식회사 | 비휘발성 메모리 소자 및 그 구동방법 |
US7163877B2 (en) * | 2004-08-18 | 2007-01-16 | Tokyo Electron Limited | Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing |
US20080032464A1 (en) * | 2006-08-02 | 2008-02-07 | Spansion Llc | Memory cell system with nitride charge isolation |
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KR100786707B1 (ko) * | 2006-12-21 | 2007-12-18 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 이의 제조 방법 |
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KR100199381B1 (ko) * | 1996-02-09 | 1999-06-15 | 김영환 | 플래쉬 이이피롬 셀 제조 방법 |
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KR20000018524A (ko) * | 1998-09-02 | 2000-04-06 | 김영환 | 비휘발성 메모리 소자 및 그의 제조방법 |
KR100304980B1 (ko) * | 1998-11-10 | 2001-10-19 | 김영환 | 터널링산화막형성방법및그를이용한비휘발성메모리소자제조방법 |
JP3837258B2 (ja) * | 1999-07-13 | 2006-10-25 | 三洋電機株式会社 | 不揮発性半導体記憶装置とその製造方法 |
JP2001144176A (ja) * | 1999-11-12 | 2001-05-25 | Sanyo Electric Co Ltd | 半導体装置とその製造方法 |
DE10036911C2 (de) * | 2000-07-28 | 2002-06-06 | Infineon Technologies Ag | Verfahren zur Herstellung einer Multi-Bit-Speicherzelle |
JP4104834B2 (ja) * | 2001-04-13 | 2008-06-18 | 株式会社東芝 | Mis型電界効果トランジスタの製造方法 |
TW503509B (en) * | 2001-10-29 | 2002-09-21 | Macronix Int Co Ltd | Manufacture method of substrate/oxide nitride/oxide/silicon device |
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CN109870769A (zh) * | 2019-03-04 | 2019-06-11 | 南京大学 | 一种干法蚀刻制备二氧化硅光学微盘腔的方法 |
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US6835621B2 (en) | 2004-12-28 |
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